Portable cooling device
    114.
    发明授权
    Portable cooling device 失效
    便携式冷却装置

    公开(公告)号:US07640765B2

    公开(公告)日:2010-01-05

    申请号:US11984652

    申请日:2007-11-20

    申请人: Gary Chiu Li Wang

    发明人: Gary Chiu Li Wang

    IPC分类号: F25D23/12

    摘要: A portable cooling device has a vacuum bottle, a pump, an outflow pipe, a thermal exchanger and a return pipe. The vacuum bottle holds a coolant and has an outer casing and a vacuum flask. The outer casing has a chamber. The vacuum flask is mounted in the chamber. The pump is mounted on the vacuum bottle to pump the coolant out of the vacuum bottle. The outflow pipe connects to the pump. The thermal exchanger connects to the outflow pipe, is filled by the coolant and is placed adjacent to a person to lower his body temperature. The return pipe connects between the thermal exchanger and the vacuum bottle to form a flow circle. Consequently, the portable cooling device efficiently cools the body temperature. Moreover, having the vacuum bottle to hold and insulate the coolant elongates effective cooling time of the cooling device.

    摘要翻译: 便携式冷却装置具有真空瓶,泵,流出管,热交换器和回流管。 真空瓶保持冷却液并具有外壳和真空瓶。 外壳具有一个室。 将真空瓶安装在室中。 泵安装在真空瓶上,以将冷却剂从真空瓶中抽出。 流出管连接到泵。 热交换器连接到流出管,由冷却剂填充并且被放置在与人相邻以降低其体温。 回流管连接在热交换器和真空瓶之间以形成流动圆。 因此,便携式冷却装置有效地冷却体温。 此外,使真空瓶保持并使冷却剂绝缘物延长冷却装置的有效冷却时间。

    Electronic device with an alarm clock function and method of controlling the function
    115.
    发明授权
    Electronic device with an alarm clock function and method of controlling the function 失效
    具有闹钟功能的电子设备及其功能的控制方法

    公开(公告)号:US07639570B2

    公开(公告)日:2009-12-29

    申请号:US12185129

    申请日:2008-08-04

    IPC分类号: G04C21/00 G04B23/00

    CPC分类号: G04G13/02

    摘要: An electronic device with an alarm clock function includes a storage unit storing an alarm time, audio files and related information; an audio playing module for randomly playing an audio file via an audio output unit which matches the alarm time; an option generating module for generating and outputting preset number options, at least one of them containing the related information of the playing audio file; a comparison module for receiving inputs and determining whether the input matches the related information of the playing audio file; a managing unit for disabling the alarm clock function when the input matches the related information. A method of controlling the alarm clock function is also provided.

    摘要翻译: 具有闹钟功能的电子设备包括存储警报时间,音频文件和相关信息的存储单元; 音频播放模块,用于经由与闹铃时间相匹配的音频输出单元随机播放音频文件; 用于产生和输出预设号码选项的选项产生模块,其中的至少一个包含播放音频文件的相关信息; 用于接收输入并确定输入是否匹配播放音频文件的相关信息的比较模块; 一个管理单元,用于当输入匹配相关信息时禁用闹钟功能。 还提供了一种控制闹钟功能的方法。

    Method for manufacturing indium gallium aluminium nitride thin film on silicon substrate
    117.
    发明授权
    Method for manufacturing indium gallium aluminium nitride thin film on silicon substrate 有权
    在硅衬底上制造铟镓氮化铝薄膜的方法

    公开(公告)号:US07615420B2

    公开(公告)日:2009-11-10

    申请号:US12067761

    申请日:2006-09-26

    摘要: The method for manufacturing the indium gallium aluminium nitride (InGaAlN) thin film on silicon substrate, which comprises the following steps: introducing magnesium metal for processing online region mask film, that is, or forming one magnesium mask film layer or metal transition layer; then forming one metal transition layer or magnesium mask layer, finally forming one layer of indium gallium aluminium nitride semiconductor layer; or firstly forming one layer of metal transition layer on silicon substrate and then forming the first indium gallium aluminium nitride semiconductor layer, magnesium mask layer and second indium gallium aluminium nitride semiconductor layer in this order. This invention can reduce the dislocation density of indium gallium aluminium nitride materials and improve crystal quality.

    摘要翻译: 在硅衬底上制造铟镓铝(InGaAlN)薄膜的方法,包括以下步骤:引入用于在线区域掩模膜的加工的镁金属,即形成一个镁掩模膜层或金属过渡层; 然后形成一个金属过渡层或镁掩模层,最后形成一层铟镓铝半导体层; 或者首先在硅衬底上形成一层金属过渡层,然后依次形成第一铟镓铝氮化物半导体层,镁掩模层和第二铟镓铝氮化物半导体层。 本发明可以降低铟镓铝材料的位错密度,提高晶体质量。

    BUILDING BOARD
    118.
    发明申请
    BUILDING BOARD 审中-公开
    建筑板块

    公开(公告)号:US20090169811A1

    公开(公告)日:2009-07-02

    申请号:US12118883

    申请日:2008-05-12

    申请人: Li Wang

    发明人: Li Wang

    IPC分类号: D06N7/04

    摘要: The invention relates to A building board comprising a base course and a surface course, wherein the surface course is combined at the outer surface of the base course, wherein the base course made from a composition which comprises raw materials of light burning magnesium powder, magnesium chloride solution, mineral powder originated from city refuse, glass fiber, shale and hydrochloric acid, the surface course made from a composition which comprises raw materials of light burning magnesium powder, magnesium chloride solution, quartz powder and hydrochloric acid. The invention changes part of materials in city refuse into useful resource so as to protect the environment and increase the economic benefit.

    摘要翻译: 本发明涉及一种建筑基板,包括基层和表面层,其中表面层合层合在基层的外表面,其中基层由包含轻烧镁粉,镁粉, 氯化物溶液,源自城市垃圾的矿物粉末,玻璃纤维,页岩和盐酸,表面处理由包含轻燃镁粉,氯化镁溶液,石英粉和盐酸的原料组成。 本发明将城市垃圾中的部分材料改为有用资源,保护环境,增加经济效益。

    InGaAlN LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    119.
    发明申请
    InGaAlN LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
    InGaAlN发光器件及其制造方法

    公开(公告)号:US20090026473A1

    公开(公告)日:2009-01-29

    申请号:US11915304

    申请日:2006-05-26

    IPC分类号: H01L33/00 H01L21/00

    摘要: There is provided an InGaAlN light-emitting device and a manufacturing method thereof. The light emitting device includes a conductive substrate having a main surface and a back surface, a metal bonding layer formed on the main surface of the substrate, a light reflecting layer formed on the bonding layer, a semiconductor multilayer structure including at least a p-type and an n-type InGaAlN layer disposed on the reflecting layer, the p-type InGaAlN layer directly contacting the reflecting layer, and ohmic electrodes disposed on said n-type InGaAlN layer and on the back surface of the conductive substrate, respectively.

    摘要翻译: 提供了一种InGaAlN发光器件及其制造方法。 发光器件包括具有主表面和背表面的导电衬底,形成在衬底的主表面上的金属粘合层,形成在接合层上的光反射层,至少包括p- 以及设置在反射层上的n型InGaAlN层,与反射层直接接触的p型InGaAlN层和分别设置在所述n型InGaAlN层和导电基板的背面上的欧姆电极。

    METHOD FOR OBTAINING HIGH-QUALITY BOUNDARY FOR SEMICONDUCTOR DEVICES FABRICATED ON A PARTITIONED SUBSTRATE
    120.
    发明申请
    METHOD FOR OBTAINING HIGH-QUALITY BOUNDARY FOR SEMICONDUCTOR DEVICES FABRICATED ON A PARTITIONED SUBSTRATE 审中-公开
    用于获取高分子边界的方法,用于在分离的基板上制作的半导体器件

    公开(公告)号:US20080261403A1

    公开(公告)日:2008-10-23

    申请号:US11776881

    申请日:2007-07-12

    申请人: Li Wang Fengyi Jiang

    发明人: Li Wang Fengyi Jiang

    IPC分类号: H01L21/306 H01L29/06

    摘要: One embodiment of the present invention provides a process for obtaining high-quality boundaries for individual multilayer structures which are fabricated on a trench-partitioned substrate. During operation, the process receives a trench-partitioned substrate wherein the substrate surface is partitioned into arrays of isolated deposition platforms which are separated by arrays of trenches. The process then forms a multilayer structure, which comprises a first doped layer, an active layer, and a second doped layer, on one of the deposition platforms. Next, the process removes sidewalls of the multilayer structure.

    摘要翻译: 本发明的一个实施例提供了一种用于获得制造在沟槽分隔的衬底上的各个多层结构的高质量边界的方法。 在操作期间,该过程接收沟槽分隔的衬底,其中衬底表面被分隔成由沟槽阵列隔开的隔离沉积平台的阵列。 然后,该工艺在其中一个沉积平台上形成多层结构,其包括第一掺杂层,有源层和第二掺杂层。 接下来,该方法去除多层结构的侧壁。