公开(公告)号：US20100237774A1

公开(公告)日：2010-09-23

申请号：US12722791

申请日：2010-03-12

申请人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Noriko Shibata ,  Yukie Suzuki ,  Yasuo Nakamura ,  Ikuko Kawamata ,  Yoshitaka Moriya

发明人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Noriko Shibata ,  Yukie Suzuki ,  Yasuo Nakamura ,  Ikuko Kawamata ,  Yoshitaka Moriya

IPC分类号： H05B33/06

CPC分类号： H01L51/5012 ,  F21K9/20 ,  F21K9/23 ,  F21S8/03 ,  F21S8/04 ,  F21S41/155 ,  F21V21/002 ,  F21Y2105/00 ,  F21Y2115/20 ,  H01L33/02 ,  H01L33/62 ,  H01L51/5064 ,  H05B33/22 ,  H05B33/28

摘要： To reduce the thickness of a lighting device which uses an electroluminescent material and to simplify the structure of a lighting device which uses an electroluminescent material, in the lighting device of the present invention: a terminal electrically connecting a light-emitting element included in the lighting device to the outside is formed over the same surface of a substrate as the light-emitting element; and the terminal is formed at the center of the substrate while the light-emitting element is stacked. In addition, the lighting device has a structure in which the light-emitting element is not easily deteriorated.

摘要翻译： 为了减轻使用电致发光材料的照明装置的厚度，并且简化了使用电致发光材料的照明装置的结构，在本发明的照明装置中：将包括在照明装置中的发光元件电连接的端子 器件到外部形成在与发光元件相同的表面上; 并且端子形成在基板的中心，同时发光元件堆叠。 另外，照明装置具有发光元件不易劣化的结构。

公开(公告)号：US07728334B2

公开(公告)日：2010-06-01

申请号：US12222687

申请日：2008-08-14

申请人： Shunpei Yamazaki ,  Hideaki Kuwabara ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Hideaki Kuwabara ,  Yasuyuki Arai

IPC分类号： H01L29/04

CPC分类号： H01L27/1222 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/13452 ,  G02F1/13458 ,  G02F1/136204 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2001/136295 ,  G02F2201/123 ,  G02F2202/103 ,  G02F2202/105 ,  G02F2202/28 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67225 ,  H01L21/67236 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/66765 ,  H01L29/78669

摘要： A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high.By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized.

摘要翻译： 在传统的液晶显示装置中使用至少五个光掩模制造TFT，因此制造成本高。 通过在三个光刻步骤中通过使用三个光掩模来执行像素电极127，源极区域123和漏极区域124的形成，制备具有反向交错型n沟道TFT的像素TFT部分的液晶显示装置， 并且可以实现存储电容器。

公开(公告)号：US07579214B2

公开(公告)日：2009-08-25

申请号：US11041747

申请日：2005-01-25

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Yasuyuki Arai

IPC分类号： H01L21/00

CPC分类号： H01L27/1237 ,  G02F1/13452 ,  H01L27/1214 ,  H01L27/3244 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78696 ,  H01L2029/7863 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/00

摘要： To form a driver circuit to be mounted to a liquid crystal display device or the like on a glass substrate, a quartz substrate, etc., and to provide a display device mounting driver circuits formed from different TFTs suited for their respective operational characteristics. A stick driver circuit on the scanning line side and a stick driver circuit on the data line side are different in structure, and have different TFTs in which the thickness of a gate insulating film, the channel length and other parameters are varied depending on required circuit characteristics. In the stick driver on the scanning line side, which is composed of a shift register circuit, a level shifter circuit, and a buffer circuit, the buffer circuit has a TFT with a thick gate insulating film because it is required to have a withstand voltage of 30 V. The stick driver circuit on the data line side, which is composed of a shift register circuit, a latch circuit, a level shifter circuit, and a D/A converter circuit, is driven at a high frequency, and hence its shift register circuit and latch circuit have thin gate insulating films and the channel length thereof is shorter than that of the TFT of the buffer circuit.

摘要翻译： 为了形成在玻璃基板，石英基板等上安装到液晶显示装置等的驱动电路，并且提供一种显示装置，其安装由适合其各自操作特性的不同TFT形成的驱动电路。 扫描线侧的棒状驱动电路和数据线侧的棒状驱动电路的结构不同，具有不同的TFT，栅极绝缘膜的厚度，沟道长度等参数根据所需电路而变化 特点 在由移位寄存器电路，电平移位器电路和缓冲电路组成的扫描线侧的棒驱动器中，缓冲电路具有厚栅极绝缘膜的TFT，因为需要具有耐电压 由移位寄存器电路，锁存电路，电平移位电路和D / A转换器电路组成的数据线侧的棒驱动电路以高频驱动，因此其 移位寄存器电路和锁存电路具有薄栅极绝缘膜，其沟道长度比缓冲电路的TFT的沟道长度短。

公开(公告)号：US07528418B2

公开(公告)日：2009-05-05

申请号：US11707414

申请日：2007-02-16

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Takahiro Kawakami ,  Yoshiaki Yamamoto ,  Miki Katayama ,  Kohei Yokoyama ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Takahiro Kawakami ,  Yoshiaki Yamamoto ,  Miki Katayama ,  Kohei Yokoyama ,  Yasuyuki Arai

IPC分类号： H01L33/00

CPC分类号： H01L51/5278 ,  H01L27/3244 ,  H01L27/3281 ,  H01L51/5012 ,  H01L2251/5323

摘要： It is an object of the present invention to provide a light-emitting device with high current efficiency and high display quality, in which a change in luminance with time is suppressed. The light-emitting device is provided with a plurality of light-emitting elements in each of which a plurality of light-emitting units each including at least one light-emitting layer are connected in series between a pair of electrodes. Between one of light-emitting units and the other light-emitting unit, an intermediate conductive layer is provided in the light-emitting unit. The light-emitting layer includes base material which is a compound containing an element belonging to group 2 and an element belonging to group 16 or a compound containing an element belonging to group 12 and an element belonging to group 16, and an impurity element which is an emission center. This structure makes it possible to increase light emission luminance without increasing current density.

摘要翻译： 本发明的目的是提供一种具有高电流效率和高显示质量的发光器件，其中抑制亮度随时间的变化。 发光装置设置有多个发光元件，其中每个包括至少一个发光层的多个发光单元串联连接在一对电极之间。 在一个发光单元和另一个发光单元之间，在发光单元中设置中间导电层。 发光层包括作为含有属于组2的元素和属于第16族的元素的化合物或含有属于第12族的元素和属于第16族的元素的化合物的基质材料，以及杂质元素是 排放中心。 这种结构使得可以在不增加电流密度的情况下增加发光亮度。

公开(公告)号：US20090091014A1

公开(公告)日：2009-04-09

申请号：US12249523

申请日：2008-10-10

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Yasuyuki Arai ,  Noriko Shibata

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Yasuyuki Arai ,  Noriko Shibata

IPC分类号： G09G3/36

CPC分类号： H01L27/1266 ,  H01L21/6835 ,  H01L27/1214 ,  H01L2221/68368 ,  H01L2224/05172 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/07811 ,  H01L2924/00 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05184

摘要： To provide a thin film device which becomes possible to be formed in the portion which has been considered impossible to be provided with such device by the conventional technique, and to provide a semiconductor device which occupies small space and which has high shock resistance and flexibility, a device formation layer with a thickness of at most 50 μm which was peeled from a substrate by a transfer technique is transferred to another substrate, hence, a thin film device can be formed over various substrates. For instance, a semiconductor device can be formed so as to occupy small space by pasting a thin film device which is transferred to a flexible substrate onto a rear surface of a substrate of a panel, by pasting directly a thin film device onto a rear surface of a substrate of a panel, or by transferring a thin film device to an FPC which is pasted onto a substrate of a panel.

摘要翻译： 为了提供可以在通过常规技术被认为不可能设置这种器件的部分中形成的薄膜器件，并且提供占据小空间并且具有高抗冲击性和柔性的半导体器件， 通过转印技术将从基板剥离的厚度最多为50μm的元件形成层转移到另一基板，因此可以在各种基板上形成薄膜器件。 例如，可以通过将薄膜器件直接粘贴到背面上来形成半导体器件，以便占据较小的空间，该薄膜器件被传送到柔性衬底到面板的衬底的背面上 或者通过将薄膜器件转移到贴在面板的基板上的FPC上。

公开(公告)号：US07436050B2

公开(公告)日：2008-10-14

申请号：US10760723

申请日：2004-01-21

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Yasuyuki Arai ,  Noriko Shibata

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Yasuyuki Arai ,  Noriko Shibata

IPC分类号： G09G3/36

CPC分类号： H01L27/1266 ,  H01L21/6835 ,  H01L27/1214 ,  H01L2221/68368 ,  H01L2224/05172 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/07811 ,  H01L2924/00 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05184

摘要： To provide a thin film device which becomes possible to be formed in the portion which has been considered impossible to be provided with such device by the conventional technique, and to provide a semiconductor device which occupies small space and which has high shock resistance and flexibility, a device formation layer with a thickness of at most 50 μm which was peeled from a substrate by a transfer technique is transferred to another substrate, hence, a thin film device can be formed over various substrates. For instance, a semiconductor device can be formed so as to occupy small space by pasting a thin film device which is transferred to a flexible substrate onto a rear surface of a substrate of a panel, by pasting directly a thin film device onto a rear surface of a substrate of a panel, or by transferring a thin film device to an FPC which is pasted onto a substrate of a panel.

摘要翻译： 为了提供可以在通过常规技术被认为不可能设置这种器件的部分中形成的薄膜器件，并且提供占据小空间并且具有高抗冲击性和柔性的半导体器件， 通过转印技术将从基板剥离的厚度最多为50μm的元件形成层转移到另一基板，因此可以在各种基板上形成薄膜器件。 例如，可以通过将薄膜器件直接粘贴到背面上来形成半导体器件，以便占据较小的空间，该薄膜器件被传送到柔性衬底到面板的衬底的背面上 或者通过将薄膜器件转移到贴在面板的基板上的FPC上。

公开(公告)号：US20080242051A1

公开(公告)日：2008-10-02

申请号：US12076147

申请日：2008-03-14

申请人： Shunpei Yamazaki ,  Ikuko Kawamata ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Ikuko Kawamata ,  Yasuyuki Arai

IPC分类号： H01L21/30

CPC分类号： H01L21/76254 ,  G11C16/0416 ,  G11C16/0433 ,  G11C16/0483 ,  H01L21/84 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/1203

摘要： When single crystal semiconductor layers are transposed from a single crystal semiconductor substrate (a bond wafer), the single crystal semiconductor substrate is etched selectively (this step is also referred to as groove processing), and a plurality of single crystal semiconductor layers, which are being divided in size of manufactured semiconductor elements, are transposed to a different substrate (a base substrate). Thus, a plurality of island-shaped single crystal semiconductor layers (SOI layers) can be formed over the base substrate. Further, etching is performed on the single crystal semiconductor layers formed over the base substrate, and the shapes of the SOI layers are controlled precisely by being processed and modified.

摘要翻译： 当单晶半导体层从单晶半导体衬底（接合晶片）转置时，选择性地蚀刻单晶半导体衬底（该步骤也称为沟槽处理），并且多个单晶半导体层是 被分割成制造的半导体元件的尺寸，被转置到不同的基板（基底）。 因此，可以在基底基板上形成多个岛状单晶半导体层（SOI层）。 此外，对形成在基底基板上的单晶半导体层进行蚀刻，并且通过加工和改进来精确地控制SOI层的形状。

公开(公告)号：US07378791B2

公开(公告)日：2008-05-27

申请号：US11111747

申请日：2005-04-22

申请人： Shunpei Yamazaki ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Yasuyuki Arai

IPC分类号： H01J1/62 ,  H01J63/04

CPC分类号： G02F1/167 ,  G02B26/026 ,  G02F1/133305 ,  G02F1/1368 ,  G02F2001/1672 ,  G02F2001/1676 ,  G02F2001/1678 ,  G02F2201/123 ,  G09F9/372 ,  G09G3/344 ,  H01L51/0097 ,  H01L51/0545

摘要： A constitution of the display device of the invention is shown in the following. The display device includes a pixel unit including TFTs of which the active layer contains an organic semiconductor material for forming channel portions in the opening portions in an insulating layer arranged to meet the gate electrodes. The pixel unit further includes a contrast media formed on the electrodes connected to the TFTs for changing the reflectivity upon the application of an electric field, or microcapsules containing electrically charged particles that change the reflectivity upon the application of an electric field. The pixel unit is sandwiched by plastic substrates, and barrier layers including an inorganic insulating material are provided between the plastic substrates and the pixel unit. The purpose of the present invention is to supply display devices which are excellent in productivity, light in weight and flexible.

摘要翻译： 以下示出本发明的显示装置的结构。 显示装置包括像素单元，其包括TFT，其中有源层包含有机半导体材料，用于在布置成与栅电极相遇的绝缘层中的开口部分中形成沟道部分。 像素单元还包括形成在连接到TFT上的电极上用于改变施加电场时的反射率的造影剂，或者包含在施加电场时改变反射率的带电粒子的微胶囊。 像素单元被塑料基板夹持，并且在塑料基板和像素单元之间设置包括无机绝缘材料的阻挡层。 本发明的目的是提供生产率优良，重量轻且柔软的显示装置。

公开(公告)号：US07365361B2

公开(公告)日：2008-04-29

申请号：US10890234

申请日：2004-07-14

申请人： Keiichi Sekiguchi ,  Junichi Koezuka ,  Yasuyuki Arai ,  Shunpei Yamazaki

发明人： Keiichi Sekiguchi ,  Junichi Koezuka ,  Yasuyuki Arai ,  Shunpei Yamazaki

IPC分类号： H01L29/76

CPC分类号： H01L27/1214 ,  H01L27/1203 ,  H01L27/127 ,  H01L29/78624 ,  H01L29/78645 ,  H01L29/78675 ,  H01L29/78696 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/05099

摘要： The present invention provides a method for manufacturing a semiconductor device, by which a transistor including an active layer, a gate insulating film in contact with the active layer, and a gate electrode overlapping the active layer with the gate insulating film therebetween is provided; an impurity is added to a part of a first region overlapped with the gate electrode with the gate insulating film therebetween in the active layer and a second region but the first region in the active layer by adding the impurity to the active layer from one oblique direction; and the second region is situated in the one direction relative to the first region.

摘要翻译： 本发明提供一种制造半导体器件的方法，通过该方法，提供了包括有源层，与有源层接触的栅极绝缘膜和与有源层重叠的栅极与其间的栅极绝缘膜的晶体管。 在有源层和第二区域之间，与栅电极重叠的第一区域的一部分添加杂质，而通过从有源层向一个倾斜方向添加杂质，而在有源层中添加杂质 ; 并且第二区域相对于第一区域位于一个方向上。

公开(公告)号：US20080076974A1

公开(公告)日：2008-03-27

申请号：US11785963

申请日：2007-04-23

申请人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Miho Komori

发明人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Miho Komori

IPC分类号： A61B5/00 ,  A61B5/04

CPC分类号： A61B5/0002 ,  A61B5/0008 ,  A61B5/6833 ,  A61B2560/0219 ,  A61B2562/08

摘要： It is an object of the present invention to provide a biological information detection sensor system which can be easily replaced. The present invention relates to a biological information detection sensor system having an adhesive tape including an adhesive surface which is provided with an adhesive material and a surface which is not provided with the adhesive material; a biological information detection sensor having an ID tag in which personal information is stored and a sensor, which is attached to an adhesive surface side of the adhesive tape; and an antenna which is connected to the biological information detection sensor and is pulled from the adhesive surface of the adhesive tape to the surface thereof through a groove provided in the adhesive tape. Accordingly, even if the biological information detection sensor gets dirty, it can be replaced to a new one soon, thereby being sanitary.

摘要翻译： 本发明的目的是提供一种可以容易地更换的生物信息检测传感器系统。 生物信息检测传感器系统本发明涉及一种生物信息检测传感器系统，其具有包括粘合剂表面的粘合带，所述粘合剂表面设置有粘合剂材料和未设置有粘合剂材料的表面; 具有存储个人信息的ID标签的生物信息检测传感器和附着在胶带的粘合面侧的传感器; 和连接到生物信息检测传感器的天线，并通过设置在胶带中的槽从粘合带的粘合表面拉到其表面。 因此，即使生物信息检测传感器变脏，也可以更换新的检测传感器，从而卫生。