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    Twin waveguide based design for photonic integrated circuits
    113.
    发明授权
    Twin waveguide based design for photonic integrated circuits 失效

    公开(公告)号：US06381380B1

    公开(公告)日：2002-04-30

    申请号：US09337785

    申请日：1999-06-22

    Applicant: Stephen R. Forrest ,  Milind Gokhale ,  Pavel Studenkov

    Inventor： Stephen R. Forrest ,  Milind Gokhale ,  Pavel Studenkov

    IPC: G02B600

    CPC classification number: G02B6/12004 ,  B82Y20/00 ,  G02B6/12021 ,  G02B6/2813 ,  G02B2006/12121 ,  G02B2006/12178 ,  G02B2006/12195 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/1064 ,  H01S5/3403 ,  H01S5/34306 ,  H01S5/50

    Abstract: An asymmetric twin waveguide (ATG) structure is disclosed that significantly reduces the negative effects of inter-modal interference in symmetric twin-waveguide structures and which can be effectively used to implement a variety of optical devices. The ATG structure of the invention can be monolithically fabricated on a single epitaxial structure without the necessity of epitaxial re-growth. To achieve the ATG structure of the invention, the effective index of the passive waveguide in the ATG is varied from that of a symmetric twin waveguide such that one mode of the even and odd modes of propagation is primarily confined to the passive waveguide and the other to the active waveguide. The different effective indices of the two coupled waveguides result in the even and odd modes becoming highly asymmetric. As a result, the mode with the larger confinement factor in the active waveguide experiences higher gain and becomes dominant. In a further embodiment, the active waveguide is tapered to reduce coupling losses of the optical energy between the passive waveguide and the active waveguide. In a further embodiment, a grating region is incorporated atop the passive waveguide to select certain frequencies for transmission of light through the passive waveguide.

    Photonic integrated detector having a plurality of asymmetric waveguides
    115.
    发明授权
    Photonic integrated detector having a plurality of asymmetric waveguides 有权
    具有多个不对称波导的光子集成检测器

    公开(公告)号：US06330378B1

    公开(公告)日：2001-12-11

    申请号：US09717851

    申请日：2000-11-21

    Applicant: Stephen R. Forrest ,  Milind R. Gokhale ,  Pavel V. Studenkov

    Inventor： Stephen R. Forrest ,  Milind R. Gokhale ,  Pavel V. Studenkov

    IPC: G02B612

    CPC classification number: H01S5/0262 ,  G02B6/12002 ,  G02B6/12004 ,  G02B6/1228 ,  G02B6/30 ,  G02B2006/12123 ,  G02B2006/12195 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/1064

    Abstract: A photonic integrated circuit (PIC) device comprising two or more vertically stacked asymmetric waveguides is provided. A photo-detector PIC device comprises a coupling waveguide for providing low-coupling loss with an external optical fiber and for guiding primarily a first mode of light, a second waveguide vertically coupled to the first waveguide for guiding primarily a second mode of light having an effective index of refraction different from the first mode, and a photo-detector vertically coupled to the second waveguide. Light received at the coupling waveguide is moved into the second waveguide via a lateral taper in the second waveguide. The photo-detector PIC device may further comprise a third waveguide having an optical amplifier therein and positioned between the coupling waveguide and the second waveguide.

    Abstract translation: 提供了包括两个或更多个垂直堆叠的非对称波导的光子集成电路（PIC）器件。 光检测器PIC器件包括：耦合波导，用于提供与外部光纤的低耦合损耗并且用于主要引导第一模式的光;垂直耦合到第一波导的第二波导，用于主要引导具有 有效折射率不同于第一模式，以及垂直耦合到第二波导的光电检测器。 在耦合波导处接收的光通过第二波导中的横向锥度移动到第二波导中。 光检测器PIC器件还可以包括其中具有光学放大器并位于耦合波导和第二波导之间的第三波导。

    Saturated full color stacked organic light emitting devices
    117.
    发明授权
    Saturated full color stacked organic light emitting devices 有权
    饱和全彩色堆叠式有机发光装置

    公开(公告)号：US06232714B1

    公开(公告)日：2001-05-15

    申请号：US09291188

    申请日：1999-04-14

    Applicant: Zilan Shen ,  Stephen R. Forrest ,  Paul Burrows

    Inventor： Zilan Shen ,  Stephen R. Forrest ,  Paul Burrows

    IPC: H01J6304

    CPC classification number: H01L51/5036 ,  H01L27/3209 ,  H01L51/5262

    Abstract: Optical cavities in a stacked organic light emitting device (SOLEDs) can shift or attenuate the light emitted by the individual organic light emitting devices (OLEDs) in the stack. Interference caused by reflections within the stack, absorption, positioning of the light source, and the polarization of the emitted light can all determine how the spectra of the emitted light are affected by the SOLED structure. A detailed model that provides a good fit to measured SOLED emissions can be used to predict how a SOLED will affect light emitted by OLEDs. As a result, SOLED geometries that will optimize color saturation and external quantum efficiency can be predicted.

    Abstract translation: 层叠的有机发光器件（SOLED）中的光学腔可以移动或衰减由堆叠中的各个有机发光器件（OLED）发射的光。 由堆叠内的反射引起的干扰，光源的吸收，定位以及发射的光的偏振都可以确定发射光的光谱如何受到SOLED结构的影响。 可以使用提供与测量的SOLED排放量相适应的详细模型来预测SOLED如何影响OLED发出的光。 因此，可以预测将优化色饱和度和外部量子效率的SOLED几何形状。

    Light emitting device using dual light emitting stacks to achieve full-color emission
    118.
    发明授权
    Light emitting device using dual light emitting stacks to achieve full-color emission 有权
    使用双重发光堆的发光器件实现全色发射

    公开(公告)号：US6166489A

    公开(公告)日：2000-12-26

    申请号：US153349

    申请日：1998-09-15

    Applicant: Mark Thompson ,  Stephen R. Forrest ,  Gong Gu

    Inventor： Mark Thompson ,  Stephen R. Forrest ,  Gong Gu

    IPC: H01L27/32 ,  H01L51/50 ,  H01J1/62

    CPC classification number: H01L27/3209 ,  H01L27/3211 ,  H01L51/5036

    Abstract: Light emitting devices including at least one pixel comprising a first light emitting stack and a second light emitting stack placed side-by-side. The first and second light emitting stacks each comprise a first OLED and a second OLED over the first OLED. The first light emitting stack further includes a downconversion layer under the first OLED. Together, the first and second stacks are capable of emitting any visible color of light.

    Abstract translation: 包括至少一个像素的发光器件包括并排设置的第一发光堆叠和第二发光堆叠。 第一和第二发光堆每个包括在第一OLED上的第一OLED和第二OLED。 第一发光叠层还包括在第一OLED下面的下变换层。 一起，第一和第二堆叠能够发出任何可见的光线。

    Restricted contact planar photodiode
    120.
    发明授权
    Restricted contact planar photodiode 失效
    受限接触平面光电二极管

    公开(公告)号：US4990989A

    公开(公告)日：1991-02-05

    申请号：US464505

    申请日：1990-01-12

    Applicant: Mahmoud A. ElHamamsy ,  Stephen R. Forrest ,  John R. Zuber

    Inventor： Mahmoud A. ElHamamsy ,  Stephen R. Forrest ,  John R. Zuber

    IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/105

    CPC classification number: H01L31/022408 ,  H01L31/02161 ,  H01L31/022416 ,  H01L31/105

    Abstract: An InGaAs photodiode is described in which a double layer of silicon nitride on the front surface serves several functions; both layers passivate the surface; an opening in the lower layer provides a diffusion mask for forming the p-n junction; and a narrower opening in the upper silicon nitride layer provides a deposition mask for forming a restricted area contact. In order to reduce strain near the junction, and hence reduce leakage currents and enhance reliability, the contact geometry has a narrow pedestal portion which contacts the surface in a zone remote from the junction edges and has a wider cap portion which is formed on the pedestal portion to seal the surface from the introduction of contaminants. The photodiode may be back-illuminated or front-illuminated.

    Abstract translation: 描述了InGaAs光电二极管，其中前表面上的双层氮化硅具有若干功能; 两层钝化表面; 下层的开口提供用于形成p-n结的扩散掩模; 并且上部氮化硅层中的较窄的开口提供用于形成限制区域接触的沉积掩模。 为了减小接头附近的应变，并且因此减小泄漏电流并增强可靠性，接触几何形状具有窄的基座部分，其在远离接合边缘的区域中接触表面，并且具有形成在基座上的较宽的盖部分 部分以密封表面免受污染物的引入。 光电二极管可以是背照式或前照式的。

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