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    ION BEAM DEVICE
    122.
    发明申请
    ION BEAM DEVICE 审中-公开
    离子束装置

    公开(公告)号：US20140319370A1

    公开(公告)日：2014-10-30

    申请号：US14328754

    申请日：2014-07-11

    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

    Inventor： Hiroyasu SHICHI ,  Shinichi MATSUBARA ,  Norihide SAHO ,  Masahiro YAMAOKA ,  Noriaki ARAI

    IPC: H01J27/02 ,  H01J37/26

    CPC classification number: H01J27/26 ,  H01J27/022 ,  H01J37/023 ,  H01J37/067 ,  H01J37/08 ,  H01J37/26 ,  H01J37/28 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/061 ,  H01J2237/0807 ,  H01J2237/2803

    Abstract: An ion beam device according to the present invention includes a gas field ion source (1) including an emitter tip (21) supported by an emitter base mount (64), a ionization chamber (15) including an extraction electrode (24) and being configured to surround the emitter tip (21), and a gas supply tube (25). A center axis line of the extraction electrode (24) overlaps or is parallel to a center axis line (14A) of the ion irradiation light system, and a center axis line (66) passing the emitter tip (21) and the emitter base mount (64) is inclinable with respect to a center axis line of the ionization chamber (15). Accordingly, an ion beam device including a gas field ion source capable of adjusting the direction of the emitter tip is provided.

    Abstract translation: 根据本发明的离子束装置包括气体离子源（1），其包括由发射极基座（64）支撑的发射极尖端（21），包括引出电极（24）的电离室（15） 构造成围绕发射器尖端（21），以及气体供应管（25）。 引出电极（24）的中心轴线与离​​子照射光系统的中心轴线（14A）重叠或平行，通过发射极尖端（21）和发射极基座 （64）相对于所述电离室（15）的中心轴线是可倾斜的。 因此，提供了包括能够调节发射极尖端的方向的气体场离子源的离子束装置。

    FOCUSED ION BEAM APPARATUS AND CONTROL METHOD THEREOF
    124.
    发明申请
    FOCUSED ION BEAM APPARATUS AND CONTROL METHOD THEREOF 有权
    聚焦离子束装置及其控制方法

    公开(公告)号：US20140292189A1

    公开(公告)日：2014-10-02

    申请号：US14218020

    申请日：2014-03-18

    Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

    Inventor： Fumio ARAMAKI ,  Yasuhiko SUGIYAMA ,  Hiroshi OBA

    IPC: H01J37/30

    CPC classification number: H01J37/08 ,  H01J2237/002 ,  H01J2237/0807

    Abstract: A focused ion beam apparatus is configured to perform at least one of a process of controlling an operation of a cooling unit so that a temperature of a wall surface contacting a source gas in an ion source chamber is maintained at a temperature higher than a temperature at which the source gas freezes and a process of controlling an operation of a heater so that an emitter is temporarily heated when the source gas is exchanged.

    Abstract translation: 聚焦离子束装置被配置为执行控制冷却单元的操作的处理中的至少一个，使得与离子源室中的源气体接触的壁面的温度保持在高于 源气体冻结，并且控制加热器的操作的过程，使得当更换源气体时发射器被暂时加热。

    FOCUSED ION BEAM SYSTEM
    125.
    发明申请
    FOCUSED ION BEAM SYSTEM 有权
    聚焦离子束系统

    公开(公告)号：US20140284474A1

    公开(公告)日：2014-09-25

    申请号：US14221514

    申请日：2014-03-21

    Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

    Inventor： Yasuhiko SUGIYAMA ,  Tomokazu KOZAKAI ,  Osamu MATSUDA

    IPC: H01J37/26 ,  H01J27/20

    CPC classification number: H01J37/28 ,  H01J37/08 ,  H01J37/222 ,  H01J2237/0807 ,  H01J2237/221 ,  H01J2237/2803 ,  H01J2237/31749

    Abstract: A focused ion beam system includes a gas field ion source which generates gas ions, an ion gun unit which accelerates the gas ions and radiates the gas ions as an ion beam, a beam optical system which includes at least a focusing lens electrode and radiates the ion beam onto a sample, and an image acquiring mechanism which acquires an FIM image of a tip of an emitter based on the ion beam. The image acquiring mechanism includes an alignment electrode which is disposed between the ion gun unit and the focusing lens electrode and adjusts a radiation direction of the ion beam, an alignment control unit which applies an alignment voltage to the alignment electrode, and an image processing unit which combines a plurality of FIM images acquired when applying different alignment voltages to generate one composite FIM image.

    Abstract translation: 聚焦离子束系统包括产生气体离子的气体离子源，加速气体离子并将气体离子作为离子束辐射的离子枪单元，包括至少聚焦透镜电极的射束光学系统， 离子束到样品，以及图像获取机构，其基于离子束获取发射器的尖端的FIM图像。 图像获取机构包括配置在离子枪单元和聚焦透镜电极之间并调整离子束的辐射方向的取向电极，向对准电极施加取向电压的取向控制单元和图像处理单元 其组合当应用不同对准电压时获得的多个FIM图像以生成一个复合FIM图像。

    METHOD FOR FABRICATING EMITTER
    127.
    发明申请
    METHOD FOR FABRICATING EMITTER 审中-公开
    制造发电机的方法

    公开(公告)号：US20140246397A1

    公开(公告)日：2014-09-04

    申请号：US14278760

    申请日：2014-05-15

    Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

    Inventor： Yasuhiko SUGIYAMA ,  Kazuo AITA ,  Fumio ARAMAKI ,  Tomokazu KOZAKAI ,  Osamu MATSUDA ,  Anto YASAKA

    IPC: H01J27/02

    CPC classification number: H01J27/02 ,  H01J1/15 ,  H01J1/3044 ,  H01J9/02 ,  H01J9/025 ,  H01J9/04 ,  H01J37/08 ,  H01J37/26 ,  H01J37/3056 ,  H01J2237/3174 ,  H01J2237/31749

    Abstract: A method for fabricating a sharpened needle-like emitter, the method including: electrolytically polishing an end portion of an electrically conductive emitter material so as to be tapered toward a tip portion thereof; performing a first etching in which the electrolytically polished part of the emitter material is irradiated with a charged-particle beam to form a pyramid-like sharpened part having a vertex including the tip portion; performing a second etching in which the tip portion is further sharpened through field-assisted gas etching, while observing a crystal structure at the tip portion by a field ion microscope and keeping the number of atoms at a leading edge of the tip portion at a predetermined number or less; and heating the emitter material to arrange the atoms at the leading edge of the tip portion of the sharpened part in a pyramid shape.

    Abstract translation: 一种用于制造尖锐的针状发射体的方法，该方法包括：电解抛光导电发射体材料的端部，使其朝其尖端部分逐渐变细; 进行第一蚀刻，其中用电荷粒子束照射发射体材料的电解抛光部分以形成具有包括尖端部分的顶点的棱锥状的锐化部分; 进行第二蚀刻，其中尖端部分通过场辅助气体蚀刻进一步锐化，同时通过场离子显微镜观察尖端部分处的晶体结构，并将尖端部分的前缘处的原子数保持在预定的 数量以下 并且加热发射体材料以将原子布置在尖锐部分的尖端部分的金字塔形状。

    Silicon-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during silicon ion implantation
    129.
    发明授权
    Silicon-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during silicon ion implantation 有权
    含硅掺杂剂组合物，其用于改善离子束电流的系统和方法以及硅离子注入期间的性能

    公开(公告)号：US08803112B2

    公开(公告)日：2014-08-12

    申请号：US14011887

    申请日：2013-08-28

    Applicant: Ashwini K. Sinha ,  Lloyd Anthony Brown ,  Serge Marius Campeau

    Inventor： Ashwini K. Sinha ,  Lloyd Anthony Brown ,  Serge Marius Campeau

    IPC: H01J37/08 ,  H01J37/317

    CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/006

    Abstract: A novel composition, system and method thereof for improving beam current during silicon ion implantation are provided. The silicon ion implant process involves utilizing a first silicon-based co-species and a second species. The second species is selected to have an ionization cross-section higher than that of the first silicon-based species at an operating arc voltage of an ion source utilized during generation and implantation of active silicon ions species. The active silicon ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated solely from SiF4.

    Abstract translation: 提供了一种用于在硅离子注入期间改善束电流的新型组成，系统及其方法。 硅离子注入工艺涉及利用第一硅基共同物种和第二物质。 在生成和注入活性硅离子物质期间使用的离子源的操作电弧电压下，选择第二种类具有高于第一硅类物质的离子化横截面。 活性硅离子产生改进的束电流，其特征在于与仅从SiF 4产生的束电流相比，保持或增加束电流水平，而不会引起离子源的劣化。

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