公开(公告)号：US20080179288A1

公开(公告)日：2008-07-31

申请号：US11685767

申请日：2007-03-14

Applicant: KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

Inventor： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC: C23F1/00

CPC classification number: H01L21/0206 ,  H01L21/67115 ,  H01L21/68728 ,  H01L21/68735 ,  H01L21/68764

Abstract: A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving a peripheral annular portion of the backside exposed. The process further includes confining gas flow at the edge of the workpiece within a gap at the edge of the workpiece on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the front side and a lower process zone containing the backside. A first plasma is generated in a lower external chamber from a polymer etch precursor gas, and an etchant by-product is introduced from the first plasma into the lower process zone. A second plasma is generated in an upper external plasma chamber from a precursor gas of a scavenger of the etchant by-product, and scavenger species are introduced from the second plasma into the upper process zone.

Abstract translation: 提供了从工件的背面除去聚合物的方法。 该工艺包括在真空室的背面支撑工件，同时使背面的外围环形部分露出。 该方法还包括将工件边缘处的气流限制在工件边缘的间隙中约为室直径的约1％，间隙限定了包含前侧的上工艺区域之间的边界 和一个含有背面的下部工艺区。 在来自聚合物蚀刻前体气体的下部外部室中产生第一等离子体，并且将蚀刻剂副产物从第一等离子体引入下部工艺区域。 在来自蚀刻剂副产物的清除剂的前体气体的上部外部等离子体室中产生第二等离子体，并且清除剂物质从第二等离子体引入上部工艺区域。

公开(公告)号：US20080179009A1

公开(公告)日：2008-07-31

申请号：US11685775

申请日：2007-03-14

Applicant: KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

Inventor： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC: H01L21/306

CPC classification number: H01L21/68764 ,  H01J37/32357 ,  H01J37/32366 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68728

Abstract: A reactor is provided for removing polymer from a backside of a workpiece. The reactor includes a vacuum chamber having a ceiling, a floor and a cylindrical side wall. A workpiece support apparatus within the chamber is configured to support a workpiece thereon so that the workpiece has its front side facing the ceiling. The support apparatus leaves at least an annular periphery of the backside of the workpiece exposed. A confinement member defines a narrow gap with the outer edge of the workpiece, the narrow gap being on the order of about 1% of the workpiece diameter, the narrow gap corresponding to a boundary dividing the chamber between an upper process zone and a lower process zone. A vacuum pump is coupled to the lower process zone. The reactor further includes a local plasma-generating chamber and a nozzle disposed on a side of the workpiece support apparatus that is opposite a support surface of the workpiece support apparatus where the workpiece is to reside, the nozzle coupled to receive plasma from the local plasma-generating chamber. The nozzle is directed at a target area of the annular periphery so as to direct a plasma stream at the workpiece backside. A supply of a polymer etch precursor gas is coupled to the local plasma-generating chamber. A rotation actuator rotates the workpiece support apparatus relative to the nozzle.

Abstract translation: 提供反应器用于从工件的背面去除聚合物。 反应器包括具有天花板，地板和圆柱形侧壁的真空室。 室内的工件支撑装置构造成在其上支撑工件，使得工件的前侧面对天花板。 支撑装置离开被暴露的工件的背面的至少一个环形周边。 约束构件与工件的外边缘限定窄间隙，窄间隙约为工件直径的约1％，窄间隙对应于在上工艺区和下工艺之间划分室的边界 区。 真空泵联接到下部处理区。 反应器还包括局部等离子体产生室和设置在工件支撑装置的与工件所在的工件支撑装置的支撑表面相对的一侧的喷嘴，喷嘴被连接以接收来自局部等离子体的等离子体 生成室。 喷嘴指向环形周边的目标区域，以便在工件背面引导等离子体流。 聚合物蚀刻前体气体的供应物连接到局部等离子体产生室。 旋转致动器相对于喷嘴旋转工件支撑装置。

公开(公告)号：US20080178913A1

公开(公告)日：2008-07-31

申请号：US11685902

申请日：2007-03-14

Applicant: KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

Inventor： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC: B08B7/00

CPC classification number: H01L21/68764 ,  H01J37/32357 ,  H01J37/32366 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68728

Abstract: A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving at least a peripheral annular portion of the backside exposed. The process further includes confining gas flow at the edge of the workpiece within a gap at the edge of the workpiece on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the wafer front side and a lower process zone containing the wafer backside. The process also includes providing a polymer etch precursor gas underneath the backside edge of the workpiece and applying RF power to a region underlying the backside edge of the workpiece to generate a first plasma of polymer etch species concentrated in an annular ring concentric with and underneath the backside edge of the workpiece.

Abstract translation: 提供了从工件的背面除去聚合物的方法。 该方法包括在真空室的背面支撑工件，同时至少留下背面的周边环形部分。 该方法还包括将工件边缘处的气流限制在工件边缘的间隙中约为室直径的约1％，间隙限定了包含晶片前端的上工艺区域之间的边界 侧面和下部工艺区域，其中包含晶片背面。 该方法还包括在工件的后边缘下方提供聚合物蚀刻前体气体，并将RF功率施加到工件的后边缘下方的区域，以产生聚集在一起的聚合物蚀刻物质等离子体 工件的后边缘。

公开(公告)号：US07393765B2

公开(公告)日：2008-07-01

申请号：US11788523

申请日：2007-04-19

Applicant: Hiroji Hanawa ,  Kartik Ramaswamy ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Biagio Gallo ,  Andrew Nguyen

Inventor： Hiroji Hanawa ,  Kartik Ramaswamy ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Biagio Gallo ,  Andrew Nguyen

IPC: H01L21/44 ,  H01L21/425

CPC classification number: H01L21/02274 ,  C23C14/48 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/32357 ,  H01J37/32412 ,  H01J2237/2001 ,  H01L21/02126 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/31604 ,  H01L21/318 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/6659 ,  Y10T29/5313

Abstract: Device-enhancing coatings are deposited on CMOS devices by successively masking with photoresist each one of the sets of N-channel and P-channel devices while unmasking or leaving unmasked the other set, and after each step of successively masking one of the sets of devices, carrying out low temperature CVD steps with a toroidal RF plasma current while applying an RF plasma bias voltage. The temperature of the workpiece is held below a threshold photoresist removal temperature. The RF bias voltage is held at a level at which the coating is deposited with a first stress when the unmasked set consists of the P-channel devices and with a second stress when the unmasked set consists of N-channel devices.

Abstract translation: 通过在每个N沟道和P沟道器件组中的每一个上对光阻单元进行连续掩蔽，同时在CMOS器件上沉积器件增强涂层，同时对另一个器件进行掩蔽或者脱离另一个器件，并且在每个步骤连续地掩蔽器件组中的一个器件 在施加RF等离子体偏压的同时，用环形RF等离子体电流进行低温CVD步骤。 工件的温度保持在阈值光刻胶去除温度以下。 当未屏蔽组由P沟道器件组成并且当未屏蔽组由N沟道器件组成时，RF偏置电压保持在第一应力下沉积涂层的水平。

公开(公告)号：US07288491B2

公开(公告)日：2007-10-30

申请号：US11046562

申请日：2005-01-28

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

IPC: H01L21/469 ,  H01L21/31 ,  B08B3/12 ,  B08B6/00 ,  B08B7/00 ,  B08B7/02

CPC classification number: H01J37/32082 ,  H01J37/321 ,  H01L21/67109 ,  H01L21/6831

Abstract: One method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber includes initially depositing a seasoning film on the interior surfaces of the plasma reactor chamber before the workpiece is introduced, by introducing a seasoning film precursor gas into the chamber and generating a plasma within the chamber, performing plasma immersion ion implantation on the workpiece by introducing an implant species precursor gas into the chamber and generating a plasma, and then removing the workpiece from the chamber and removing the seasoning film from the chamber interior surfaces.

Abstract translation: 在等离子体反应器室中的工件上进行等离子体浸没离子注入的一种方法包括：在工件被引入之前，首先在等离子体反应器室的内表面上沉积调味膜，通过将调味膜前体气体引入室中， 在室内的等离子体，通过将注入种类前体气体引入到腔室中并产生等离子体，然后从腔室中移出工件并从室内表面除去调味膜，从而在工件上进行等离子体浸没离子注入。

公开(公告)号：US07244474B2

公开(公告)日：2007-07-17

申请号：US10873485

申请日：2004-06-22

Applicant: Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

Inventor： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

IPC: H05H1/03 ,  H05H1/46 ,  C23C16/30 ,  C23C16/34 ,  C23C16/40

CPC classification number: C23C16/452 ,  C23C16/402 ,  C23C16/517

Abstract: A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid. A workpiece is placed in the process region facing the ion shower grid, the workpiece having a workpiece surface generally facing the surface plane of the ion shower grid. A gas mixture is furnished comprising deposition precursor species into the ion generation region and the process region is evacuated at an evacuation rate sufficient to create a pressure drop across the ion shower grid from the ion generation region to the process region whereby the pressure in the ion generation region is at least several times the pressure in the process region. A layer of material of a desired thickness is deposited on the workpiece by: (a) applying plasma source power to generate a plasma of the deposition precursor species in the ion generation region, and (b) applying a grid potential to the ion shower grid to create a flux of ions from the plasma through the grid and into the process region.

Abstract translation: 在具有离子喷淋网格的反应室中进行化学气相沉积工艺，该离子喷淋网格将室分成上部离子产生区域和下部工艺区域，离子喷淋格栅具有相对于一个非平行方向取向的多个孔口 离子淋浴网格的表面。 工件放置在面向离子喷淋格栅的工艺区域中，工件具有大致面向离子喷淋栅格的表面的工件表面。 配备气体混合物，其包括沉积前体物质进入离子产生区域，并且处理区域以足以在从离子产生区域到过程区域的离子喷淋网格上产生压降的抽空速率抽真空，由此离子中的压力 发生区域至少是过程区域压力的几倍。 通过以下步骤沉积所需厚度的一层材料：（a）施加等离子体源功率以在离子产生区域中产生沉积前体物质的等离子体，和（b）将栅格电位施加到离子喷淋栅格 以从等离子体中产生离子通过网格并进入过程区域。

公开(公告)号：US06790311B2

公开(公告)日：2004-09-14

申请号：US10021195

申请日：2001-10-30

Applicant: Kenneth S Collins ,  Michael Rice ,  Farahmand E Askarinam ,  Douglas A Buchberger, Jr. ,  Craig A Roderick

Inventor： Kenneth S Collins ,  Michael Rice ,  Farahmand E Askarinam ,  Douglas A Buchberger, Jr. ,  Craig A Roderick

IPC: C23C1600

CPC classification number: H01J37/32458 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/31116 ,  H01L21/6831

Abstract: In a plasma reactor including a reactor chamber, a workpiece support for holding a workpiece inside the chamber during processing and an inductive antenna, a window electrode proximal a wall of the chamber, the antenna and wall being positioned adjacently, the window electrode being operable as (a) a capacitive electrode accepting RF power to capacitively coupled plasma source power into the chamber, and (b) a window electrode passing RF power therethrough from said antenna into the chamber to inductively couple plasma source power into the chamber.

Abstract translation: 在包括反应器室的等离子体反应器中，用于在处理期间将工件保持在室内的工件支撑件和感应天线，靠近室壁的窗口电极，天线和壁相邻地定位，窗口电极可操作为 （a）容纳RF功率的电容电极，以将等离子体源功率电容耦合到腔室中，以及（b）将RF功率从所述天线传递到腔室中以将等离子体源功率感应耦合到腔室中的窗口电极。

公开(公告)号：US06634313B2

公开(公告)日：2003-10-21

申请号：US09782795

申请日：2001-02-13

Applicant: Hiroji Hanawa ,  Kenneth S. Collins ,  John R. Trow ,  David Stover ,  Fernando Silveira

Inventor： Hiroji Hanawa ,  Kenneth S. Collins ,  John R. Trow ,  David Stover ,  Fernando Silveira

IPC: C23C1600

CPC classification number: H01J37/321

Abstract: An electrostatically shielded toroidal plasma and radical source is provided. The plasma source includes a grounded metallic plasma source chamber that defines an interior for plasma generation. The plasma source chamber is configured from two L-shaped portions arranged to form rectangularly shaped enclosure. Dielectric breaks are defined by gaps between the two L-shaped portions. A drive inductor is configured such that the metallic plasma source chamber is positioned between loops of the drive inductor.

公开(公告)号：US06545420B1

公开(公告)日：2003-04-08

申请号：US08468573

申请日：1995-06-06

Applicant: Kenneth S. Collins ,  Craig A. Roderick ,  John R. Trow ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Jay D. Pinson, II ,  Tetsuya Ishikawa ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima

Inventor： Kenneth S. Collins ,  Craig A. Roderick ,  John R. Trow ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Jay D. Pinson, II ,  Tetsuya Ishikawa ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima

IPC: H01J724

CPC classification number: H01J37/32871 ,  C23C16/509 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/3222 ,  H01J37/32293 ,  H01J37/32458 ,  H01J37/32522 ,  H01J37/3266 ,  H01J37/32688 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/6831

Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

Abstract translation: 圆顶等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应器穹顶内。 天线在室内产生高密度，低能量等离子体，用于蚀刻金属，电介质和半导体材料。 施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。 公开了各种磁和电压处理增强技术，连同蚀刻工艺，沉积工艺和组合蚀刻/沉积处理。 所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。

公开(公告)号：US06488807B1

公开(公告)日：2002-12-03

申请号：US09563825

申请日：2000-05-03

Applicant: Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Craig A. Roderick ,  John R. Trow ,  Tetsuya Ishikawa ,  Jay D. Pinson, II ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima ,  Gerald Zheyao Yin

Inventor： Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Craig A. Roderick ,  John R. Trow ,  Tetsuya Ishikawa ,  Jay D. Pinson, II ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima ,  Gerald Zheyao Yin

IPC: H05H100

CPC classification number: H01J37/32871 ,  C23C16/507 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/6831

Abstract: The invention is embodied in an RF plasma reactor for processing a semiconductor workpiece, including wall structures for containing a plasma therein, a workpiece support, a coil antenna capable of receiving a source RF power signal and being juxtaposed near the chamber, the workpiece support including a bias electrode capable of receiving a bias RF power signal, and first and second magnet structures adjacent the wall structure and in spaced relationship, with one pole of the first magnet structure facing an opposite pole of the second magnet structure, the magnet structures providing a plasma-confining static magnetic field adjacent said wall structure. The invention is also embodied in an RF plasma reactor for processing a semiconductor workpiece, including one or more wall structures for containing a plasma therein, a workpiece support, the workpiece support comprising a lower electrode, an upper electrode facing the lower electrode and spaced across a plasma generation region of said chamber from said lower electrode, and first and second magnet structures adjacent the wall structure and in spaced relationship with one pole of the first magnet structure facing an opposite pole of the second magnet structure, the magnet structures providing a plasma-confining static magnetic field adjacent said wall structure.

Abstract translation: 本发明体现在用于处理半导体工件的RF等离子体反应器中，其包括用于在其中容纳等离子体的壁结构，工件支撑件，能够接收源RF功率信号并在该室附近并列的线圈天线，所述工件支撑件包括 能够接收偏置RF功率信号的偏置电极，以及与壁结构相邻并且间隔的关系的第一和第二磁体结构，第一磁体结构的一个磁极面对第二磁体结构的相对极，磁体结构提供 等离子体约束的静磁场与所述壁结构相邻。 本发明还体现在用于处理半导体工件的RF等离子体反应器中，该半导体工件包括一个或多个用于在其中容纳等离子体的壁结构，工件支撑件，工件支撑件包括下电极，上电极面向下电极并间隔开 所述腔室的等离子体产生区域与所述下部电极相邻，第一和第二磁体结构邻近所述壁结构并且与所述第一磁体结构的与所述第二磁体结构的相反极的一极相隔开，所述磁体结构提供等离子体 围绕所述壁结构保持静止磁场。