公开(公告)号：US07142342B2

公开(公告)日：2006-11-28

申请号：US10453376

申请日：2003-06-02

申请人： David P. Bour ,  Ashish Tandon ,  Scott W. Corzine ,  Chaokun Lin

发明人： David P. Bour ,  Ashish Tandon ,  Scott W. Corzine ,  Chaokun Lin

IPC分类号： G02F1/03 ,  G02F1/07

CPC分类号： B82Y20/00 ,  G02F1/01708 ,  G02F2001/0157

摘要： The electroabsorption modulator comprises a p-i-n junction structure that includes an active layer, a p-type cladding layer and an n-type cladding layer with the active layer sandwiched between the cladding layers. The electroabsorption modulator additionally comprises a quantum well structure located within the active layer. The p-type cladding layer comprises a layer of heavily-doped low-diffusivity p-type semiconductor material located adjacent the active layer that reduces the extension of the depletion region into the p-type cladding layer when a reverse bias is applied to the electroabsorption modulator. The reduced extension increases the strength of the electric field applied to the quantum well structure by a given reverse bias voltage. The increased field strength increases the extinction ratio of the electroabsorption modulator.

摘要翻译： 电吸收调制器包括p-i-n结结构，其包括有源层，p型包层和n型包覆层，活性层夹在包层之间。 电吸收调制器还包括位于有源层内的量子阱结构。 p型包覆层包括位于有源层附近的重掺杂低扩散性p型半导体材料层，当将反向偏压施加到电吸收时减少耗尽区的扩展到p型覆层 调制器。 缩小的延伸通过给定的反向偏置电压增加施加到量子阱结构的电场的强度。 增加的场强提高了电吸收调制器的消光比。

公开(公告)号：US07033938B2

公开(公告)日：2006-04-25

申请号：US10785747

申请日：2004-02-23

申请人： David P. Bour ,  Tetsuya Takeuchi ,  Ashish Tandon ,  Ying-Lan Chang ,  Michael R. T. Tan ,  Scott W. Corzine

发明人： David P. Bour ,  Tetsuya Takeuchi ,  Ashish Tandon ,  Ying-Lan Chang ,  Michael R. T. Tan ,  Scott W. Corzine

IPC分类号： H01L21/44

CPC分类号： C30B25/02 ,  C30B29/403 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/105 ,  H01S5/32366 ,  Y10S438/936 ,  Y10S438/938 ,  Y10S438/956

摘要： The active region of a long-wavelength light emitting device is made by providing an organometallic vapor phase epitaxy (OMVPE) reactor, placing a substrate wafer capable of supporting growth of indium gallium arsenide nitride in the reactor, supplying a Group III–V precursor mixture comprising an arsenic precursor, a nitrogen precursor, a gallium precursor, an indium precursor and a carrier gas to the reactor and pressurizing the reactor to a sub-atmospheric elevated growth pressure no higher than that at which a layer of indium gallium arsenide layer having a nitrogen fraction commensurate with light emission at a wavelength longer than 1.2 μm is deposited over the substrate wafer.

摘要翻译： 通过提供有机金属气相外延（OMVPE）反应器，将能够支持砷化镓镓氮化物的生长的衬底晶片放置在反应器中，提供III-V族前体混合物，制造长波长发光器件的有源区 包括砷前体，氮前体，镓前体，铟前体和载气，并将反应器加压至不高于砷化镓砷化物层的亚大气压升高的生长压力 在基片晶片上沉积与长于1.2μm波长的发光相当的氮气分数。

公开(公告)号：US06878970B2

公开(公告)日：2005-04-12

申请号：US10418408

申请日：2003-04-17

申请人： David P. Bour ,  Michael H. Leary ,  Ying-Lan Chang ,  Yoon-Kyu Song ,  Michael R. T. Tan ,  Tetsuya Takeuchi ,  Danielle Chamberlin

发明人： David P. Bour ,  Michael H. Leary ,  Ying-Lan Chang ,  Yoon-Kyu Song ,  Michael R. T. Tan ,  Tetsuya Takeuchi ,  Danielle Chamberlin

IPC分类号： H01S5/343 ,  H01L33/06 ,  H01L33/10 ,  H01L33/32 ,  H01L33/00 ,  H01L29/06

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/105

摘要： Light-emitting devices are described. One example of a light-emitting device includes a first barrier layer and a second barrier layer, and a quantum well layer located between the first and second barrier layers. The first and second barrier layers are composed of gallium arsenide, and the quantum well layer is composed of indium gallium arsenide nitride. A first layer is located between the quantum well layer and the first barrier layer. The first layer has a bandgap energy between that of the first barrier layer and that of the quantum well layer. Another example of a light-emitting device includes a quantum well and a carrier capture element adjacent the quantum well. The carrier capture element increases the effective carrier capture cross-section of the quantum well.

摘要翻译： 描述发光器件。 发光器件的一个示例包括第一阻挡层和第二阻挡层，以及位于第一和第二阻挡层之间的量子阱层。 第一和第二阻挡层由砷化镓构成，量子阱层由氮化铟镓组成。 第一层位于量子阱层和第一阻挡层之间。 第一层在第一阻挡层和量子阱层的能隙之间具有带隙能。 发光器件的另一示例包括量子阱和邻近量子阱的载流子俘获元件。 载体捕获元素增加量子阱的有效载流子俘获截面。

公开(公告)号：US06757314B2

公开(公告)日：2004-06-29

申请号：US09276913

申请日：1999-03-26

申请人： Michael A. Kneissl ,  David P. Bour ,  Ping Mei ,  Linda T. Romano

发明人： Michael A. Kneissl ,  David P. Bour ,  Ping Mei ,  Linda T. Romano

IPC分类号： H01S500

CPC分类号： H01L21/6835 ,  B82Y20/00 ,  H01L21/2007 ,  H01L27/153 ,  H01L33/0079 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/83192 ,  H01L2224/83895 ,  H01L2924/01079 ,  H01S5/0217 ,  H01S5/34333 ,  H01S5/4025 ,  H01S5/4031

摘要： A structure for nitride laser diode arrays attached to a thermally conducting substrate is described where the sapphire growth substrate has been removed. The thermally conducting substrate is attached to the side opposite of the sapphire growth substrate.

摘要翻译： 描述了附着到导热基底的氮化物激光二极管阵列的结构，其中已经去除了蓝宝石生长衬底。 导热衬底附着在蓝宝石生长衬底的相反侧。

公开(公告)号：US06756325B2

公开(公告)日：2004-06-29

申请号：US10140625

申请日：2002-05-07

申请人： David P. Bour ,  Tetsuya Takeuchi ,  Ashish Tandon ,  Ying-Lan Chang ,  Michael R. T. Tan ,  Scott Corzine

发明人： David P. Bour ,  Tetsuya Takeuchi ,  Ashish Tandon ,  Ying-Lan Chang ,  Michael R. T. Tan ,  Scott Corzine

IPC分类号： H01L2100

CPC分类号： C30B25/02 ,  C30B29/403 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/105 ,  H01S5/32366 ,  Y10S438/936 ,  Y10S438/938 ,  Y10S438/956

摘要： Several methods for producing an active region for a long wavelength light emitting device are disclosed. In one embodiment, the method comprises placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an indium gallium arsenide nitride (InGaAsN) film, supplying to the reactor a group-III-V precursor mixture comprising arsine, dimethylhydrazine, alkyl-gallium, alkyl-indium and a carrier gas, where the arsine and the dimethylhydrazine are the group-V precursor materials and where the percentage of dimethylhydrazine substantially exceeds the percentage of arsine, and pressurizing the reactor to a pressure at which a concentration of nitrogen commensurate with light emission at a wavelength longer than 1.2 um is extracted from the dimethylhydrazine and deposited on the substrate.

摘要翻译： 公开了用于制造用于长波长发光器件的有源区的几种方法。 在一个实施方案中，该方法包括将衬底放置在有机金属气相外延（OMVPE）反应器中，该衬底用于支持砷化铟镓氮化物（InGaAsN）膜的生长，向反应器供应III-V族前体混合物，其包含 胂，二甲基肼，烷基镓，烷基铟和载气，其中胂和二甲基肼是Ⅴ族前体材料，其中二甲基肼的百分比基本上超过胂的百分比，并将反应器加压至 其中与二氧化肼的二氧化氮中提取出长于1.2μm的波长的发光相当的氮浓度并沉积在基板上。

公开(公告)号：US06567443B2

公开(公告)日：2003-05-20

申请号：US09408415

申请日：1999-09-29

申请人： David P. Bour ,  Michael A. Kneissl ,  Linda T. Romano ,  Thomas L. Paoli ,  Christian G. Van de Walle

发明人： David P. Bour ,  Michael A. Kneissl ,  Linda T. Romano ,  Thomas L. Paoli ,  Christian G. Van de Walle

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/2218 ,  H01S5/2222 ,  H01S5/2275 ,  H01S5/3211 ,  H01S5/34333

摘要： A self aligned, index-guided, buried heterostructure AlGalnN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding layer thickness for confinement without cracking. The intensity of the light lost due to leakage is reduced by about 2 orders of magnitude with an accompanying improvement in the far-field radiation pattern when compared to conventional structures. The comparatively large p-contact area allowed by the self-aligned architecture contributes to a lower diode voltage and less heat during continuous wave operation of the laser diode.

摘要翻译： 与传统的脊波导结构相比，自对准，折射率引导，埋入异质结AlGalnN激光二极管提供了改进的模式稳定性和低阈值电流。 短周期超晶格用于允许足够的包层厚度进行约束而不会开裂。 与常规结构相比，由于泄漏而损失的光的强度降低了约2个数量级，伴随着远场辐射图的改进。 自对准结构允许的较大的p接触面积有助于在激光二极管的连续波动操作期间较低的二极管电压和较少的热量。

公开(公告)号：US06541292B2

公开(公告)日：2003-04-01

申请号：US09998335

申请日：2001-12-03

申请人： Christian G. Van de Walle ,  David P. Bour ,  Michael A. Kneissl ,  Linda T. Romano

发明人： Christian G. Van de Walle ,  David P. Bour ,  Michael A. Kneissl ,  Linda T. Romano

IPC分类号： H01L2100

CPC分类号： B82Y20/00 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/34333 ,  H01S2301/18

摘要： A structure and method for an asymmetric waveguide nitride laser diode without need of a p-type waveguide is disclosed. The need for a high aluminum tunnel barrier layer in the laser is avoided.

公开(公告)号：US06345063B1

公开(公告)日：2002-02-05

申请号：US09363251

申请日：1999-07-28

申请人： David P. Bour ,  Linda T. Romano ,  Michael A. Kneissl

发明人： David P. Bour ,  Linda T. Romano ,  Michael A. Kneissl

IPC分类号： H01S319

CPC分类号： H01L33/32 ,  H01L33/007

摘要： Group III-V nitride semiconductors are used as optoelectronic light emitters. The semiconductor alloy InGaN is used as the active region in nitride laser diodes and LEDs, as its bandgap energy can be tuned by adjusting the alloy composition, to span the entire visible spectrum. InGaN layers of high-indium content, as required for blue or green emission are difficult to grow, however, because the poor lattice mismatch between GaN and InGaN causes alloy segregation. In this situation, the inhomogeneous alloy composition results in spectrally impure emission, and diminished optical gain. To suppress segregation, the high-indium-content InGaN active region may be deposited over a thick InGaN layer, substituted for the more typical GaN. First depositing a thick InGaN layer establishes a larger lattice parameter than that of GaN. Consequently, a high indium content heterostructure active region grown over the thick InGaN layer experiences significantly less lattice mismatch compared to GaN. Therefore, it is less likely to suffer structural degradation due to alloy segregation. Thus, the thick GaN structure enables the growth of a high indium content active region with improved structural and optoelectronic properties, leading to LEDs with spectrally pure emission, and lower threshold laser diodes.

摘要翻译： III-V族氮化物半导体用作光电子发光体。 半导体合金InGaN用作氮化物激光二极管和LED中的有源区，因为其带隙能量可以通过调整合金组成来调整，以跨越整个可见光谱。 然而，蓝色或绿色发射所需的高铟含量的InGaN层难以生长，但是由于GaN和InGaN之间的不良晶格失配导致合金偏析。 在这种情况下，不均匀的合金组成导致光谱不纯的发射，并减少了光学增益。 为了抑制偏析，可以在厚的InGaN层上沉积高铟含量的InGaN有源区，代替更典型的GaN。 首先沉积厚的InGaN层形成比GaN更大的晶格参数。 因此，与GaN相比，在厚的InGaN层上生长的高铟含量的异质结构有源区域的晶格失配明显减少。 因此，由于合金分离而不太可能遭受结构劣化。 因此，厚的GaN结构能够增加具有改进的结构和光电性质的高铟含量活性区域，导致具有光谱纯发射的LED和较低阈值的激光二极管。

公开(公告)号：US5982799A

公开(公告)日：1999-11-09

申请号：US818264

申请日：1997-03-17

申请人： David P. Bour ,  Ross D. Bringans

发明人： David P. Bour ,  Ross D. Bringans

IPC分类号： H01S3/23 ,  H01S5/00 ,  H01S5/10 ,  H01S5/223 ,  H01S5/32 ,  H01S5/40 ,  H01S3/19

CPC分类号： H01S5/4031 ,  H01S5/1064 ,  H01S5/2231 ,  H01S5/3211 ,  H01S5/4087

摘要： A multiple-wavelength laser diode array is described. A wavelength span of several tens of nanometers is achieved through band-filling of a quantum well active region. A multiple-wavelength array is formed by selectively introducing different amounts of optical loss into the array elements, to affect the threshold current density. With minimum losses, the laser oscillates at a long wavelength, while an element with high loss will undergo more bandfilling and be forced to emit at a shorter wavelength. To illustrate the structures which incorporate these additional, selective losses, a 2-red-wavelength AlGaInP laser array is described. In preferred embodiments, increased optical loss is achieved in an SBR type laser by narrowing the ridge region, or by reducing its thickness. In another type of laser, increased optical loss is achieved by a very thin upper cladding layer causing increased optical absorption in a close overlying cap or metal layer.

摘要翻译： 描述了多波长激光二极管阵列。 通过量子阱活性区域的填充实现了几十纳米的波长跨度。 通过选择性地将不同量的光损耗引入到阵列元件中来形成多波长阵列，以影响阈值电流密度。 在最小损耗的情况下，激光器以长波长振荡，而具有高损耗的元件将经受更多的带状填充并被迫以较短的波长发射。 为了说明结合这些额外的选择性损耗的结构，描述了2红色波长AlGaInP激光器阵列。 在优选实施例中，通过使脊区域变窄或通过减小其厚度，在SBR型激光器中实现增加的光损耗。 在另一种类型的激光器中，通过非常薄的上包层在靠近的盖或金属层中引起增加的光吸收来实现增加的光损耗。

公开(公告)号：US5465266A

公开(公告)日：1995-11-07

申请号：US268005

申请日：1994-06-28

申请人： David P. Bour ,  Ross D. Bringans

发明人： David P. Bour ,  Ross D. Bringans

IPC分类号： H01S5/223 ,  H01S5/32 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/2232 ,  H01S5/2237 ,  H01S5/3202 ,  H01S5/3203 ,  H01S5/3206 ,  H01S5/34326

摘要： Index-guided semiconductor lasers having buried ridge waveguides which use the optical confinement resulting from the bandgap difference between a semiconductor material grown on the top plane of the ridge and a semiconductor material grown on the ridge's sidewalls. Beneficially AlGaInP is OMVPE formed on a ridged (001) GaAs substrate in which a sidewall of the ridge is at an angle of between 5 degrees and the {111} A plane of the substrate.

摘要翻译： 索引引导半导体激光器具有掩埋脊波导，其使用由在脊的顶部平面上生长的半导体材料与在脊的侧壁上生长的半导体材料之间的带隙差引起的光限制而产生的光限制。 有利地，AlGaInP是在脊（001）GaAs衬底上形成的OMVPE，其中脊的侧壁与衬底的{111} A平面成5度的角度。