公开(公告)号：US09266692B2

公开(公告)日：2016-02-23

申请号：US13561563

申请日：2012-07-30

申请人： Takao Nakamura

发明人： Takao Nakamura

IPC分类号： B65H5/00 ,  B65H9/00

CPC分类号： B65H9/006 ,  B65H2220/09 ,  B65H2403/42 ,  B65H2403/72 ,  B65H2404/14 ,  B65H2404/1442 ,  B65H2801/06

摘要： A conveying apparatus has a sheet conveying path, a first pair of rollers, which is positioned in the conveying path and which has a drive roller and a pinch roller and conveys the sheet, a second pair of rollers, which is positioned downstream relative to the first pair of rollers in the conveying direction and conveys the sheet conveyed by the first pair of rollers, and a mechanism which reduces the force for sandwiching the sheet by the drive roller and the pinch roller of the first pair of rollers or which moves both away from each other. After the sheet is conveyed by the first pair of rollers while the leading edge of the sheet is being stopped by the second pair of rollers, the second pair of rollers starts conveying the sheet, and the mechanism is actuated thereafter.

摘要翻译： 输送装置具有片材输送路径，第一对辊子，其定位在输送路径中，并且具有驱动辊和夹送辊并输送片材，第二对辊子相对于第二对辊子位于下游 第一对辊在传送方向上并且传送由第一对辊传送的纸张，以及一种机构，其减小由第一对辊的驱动辊和夹送辊夹住纸张的力或两者移动的机构 从彼此。 在纸张的前缘被第二对辊子停止之后，第一对辊子输送纸张之后，第二对辊子开始传送纸张，此后机构被致动。

公开(公告)号：US08917750B2

公开(公告)日：2014-12-23

申请号：US13328622

申请日：2011-12-16

申请人： Masahiro Adachi ,  Shinji Tokuyama ,  Yohei Enya ,  Takashi Kyono ,  Yusuke Yoshizumi ,  Katsushi Akita ,  Masaki Ueno ,  Koji Katayama ,  Takatoshi Ikegami ,  Takao Nakamura

发明人： Masahiro Adachi ,  Shinji Tokuyama ,  Yohei Enya ,  Takashi Kyono ,  Yusuke Yoshizumi ,  Katsushi Akita ,  Masaki Ueno ,  Koji Katayama ,  Takatoshi Ikegami ,  Takao Nakamura

IPC分类号： H01S5/00 ,  H01S5/343 ,  H01S5/32 ,  H01S5/20 ,  B82Y20/00 ,  H01S5/30 ,  H01S5/22

CPC分类号： H01S5/2004 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/309 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2301/18 ,  H01S2302/00

摘要： Provided is a III-nitride semiconductor laser diode which is capable of lasing at a low threshold. A support base has a semipolar or nonpolar primary surface. The c-axis Cx of a III-nitride is inclined relative to the primary surface. An n-type cladding region and a p-type cladding region are provided above the primary surface of the support base. A core semiconductor region is provided between the n-type cladding region and the p-type cladding region. The core semiconductor region includes a first optical guide layer, an active layer, and a second optical guide layer. The active layer is provided between the first optical guide layer and the second optical guide layer. The thickness of the core semiconductor region is not less than 0.5 μm. This structure allows the confinement of light into the core semiconductor region without leakage of light into the support base, and therefore enables reduction in threshold current.

摘要翻译： 提供能够以低阈值激光的III族氮化物半导体激光二极管。 支撑底座具有半极性或非极性主表面。 III族氮化物的c轴Cx相对于主表面倾斜。 在支撑基体的主表面上方设置有n型包层区域和p型包层区域。 芯型半导体区域设置在n型包层区域和p型包层区域之间。 芯半导体区域包括第一光导层，有源层和第二光导层。 有源层设置在第一光导层和第二光导层之间。 芯半导体区域的厚度不小于0.5μm。 这种结构允许将光限制在芯半导体区域中，而不会将光泄漏到支撑基底中，因此能够降低阈值电流。

公开(公告)号：US08815621B2

公开(公告)日：2014-08-26

申请号：US12970382

申请日：2010-12-16

申请人： Masaki Ueno ,  Yusuke Yoshizumi ,  Takao Nakamura

发明人： Masaki Ueno ,  Yusuke Yoshizumi ,  Takao Nakamura

IPC分类号： H01L21/00

CPC分类号： H01L21/02389 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007

摘要： A method of forming a p-type gallium nitride based semiconductor without activation annealing is provided, and the method can provide a gallium nitride based semiconductor doped with a p-type dopant. A GaN semiconductor region 17 containing a p-type dopant is formed on a supporting base 13 in a reactor 10. An organometallic source and ammonia are supplied to the reactor 10 to grow the GaN semiconductor layer 17 on a GaN semiconductor layer 15. The GaN semiconductor is doped with a p-type dopant. Examples of the p-type dopant include magnesium. After the GaN semiconductor regions 15 and 17 are grown, an atmosphere 19 containing at least one of monomethylamine and monoethylamine is prepared in the reactor 10. After the atmosphere 19 is prepared, a substrate temperature is decreased from the growth temperature of the GaN semiconductor region 17. When the substrate temperature is lowered to room temperature after this film formation, a p-type GaN semiconductor 17a and an epitaxial wafer E has been fabricated.

摘要翻译： 提供了一种形成无激活退火的p型氮化镓基半导体的方法，该方法可以提供掺杂有p型掺杂剂的氮化镓基半导体。 在反应器10中的支撑基底13上形成含有p型掺杂剂的GaN半导体区17.将有机金属源和氨供给反应器10，以在GaN半导体层15上生长GaN半导体层17。 半导体掺杂有p型掺杂剂。 p型掺杂剂的实例包括镁。 在GaN半导体区域15和17生长之后，在反应器10中制备含有一甲胺和单乙胺中的至少一种的气氛19.制备气氛19后，衬底温度从GaN半导体区域的生长温度降低 当成膜后，当衬底温度降至室温时，制造了p型GaN半导体17a和外延晶片E.

公开(公告)号：US20140203329A1

公开(公告)日：2014-07-24

申请号：US14123738

申请日：2011-06-03

申请人： Yu Saitoh ,  Masaya Okada ,  Yusuke Yoshizumi ,  Makoto Kiyama ,  Masaki Ueno ,  Koji Katayama ,  Takao Nakamura

发明人： Yu Saitoh ,  Masaya Okada ,  Yusuke Yoshizumi ,  Makoto Kiyama ,  Masaki Ueno ,  Koji Katayama ,  Takao Nakamura

IPC分类号： H01L29/66 ,  H01L29/778

CPC分类号： H01L29/66462 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/30621 ,  H01L21/3085 ,  H01L21/3086 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/7788 ,  H01L29/7789

摘要： Provided is a nitride electronic device having a structure that allows the reduction of leakage by preventing the carrier concentration from increasing in a channel layer. An inclined surface and a primary surface of a semiconductor stack extend along first and second reference planes R1, R2, respectively. The primary surface of the stack is inclined at an angle ranging from 5 to 40 degrees with respect to a reference axis indicating a c-axis direction of hexagonal group III nitride. An axis normal to the plane R1 and the axis form an angle smaller than the angle an axis normal to the plane R2 and the axis form. The oxygen concentration of the channel layer is lower than 1×1017 cm−3. It becomes possible to avoid increase in carrier concentration of the channel layer caused by the oxygen addition, thereby reducing leakage current via the channel layer in the transistor.

摘要翻译： 本发明提供一种氮化物电子器件，其具有通过防止载流子浓度在沟道层中增加而允许减少泄漏的结构。 半导体堆叠的倾斜表面和主表面分别沿着第一和第二参考平面R1，R2延伸。 堆叠的主表面相对于表示六方晶III族氮化物的c轴方向的参考轴线以5至40度的角度倾斜。 与平面R1和轴垂直的轴线形成比垂直于平面R2的轴线和轴线的角度小的角度。 通道层的氧浓度低于1×1017cm-3。 可以避免由氧添加引起的沟道层的载流子浓度增加，从而减小晶体管中的沟道层的漏电流。

公开(公告)号：US08693515B2

公开(公告)日：2014-04-08

申请号：US13050330

申请日：2011-03-17

申请人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Shinji Tokuyama ,  Koji Katayama ,  Takao Nakamura ,  Takatoshi Ikegami

发明人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Shinji Tokuyama ,  Koji Katayama ,  Takao Nakamura ,  Takatoshi Ikegami

IPC分类号： H01S5/223

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/3202 ,  H01S2301/14

摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29 to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device 11 has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface 17a. For this reason, it is feasible to make use of emission by a band transition enabling the low threshold current. In a laser structure 13, a first surface 13a is opposite to a second surface 13b. The first and second fractured faces 27, 29 extend from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.

摘要翻译： 提供了在六边形III族氮化物的c轴朝向m轴倾斜的支撑基座的半极性表面上具有允许低阈值电流的激光腔的III族氮化物半导体激光器件。 第一和第二断裂面27,29以形成与m-n平面相交的激光腔。 III族氮化物半导体激光器件11具有在m-n平面和半极性表面17a之间的交线的方向上延伸的激光波导。 因此，通过能够实现低阈值电流的带状转变来利用发射是可行的。 在激光结构13中，第一表面13a与第二表面13b相对。 第一和第二断裂面27,29从第一表面13a的边缘13c延伸到第二表面13b的边缘13d。 断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

公开(公告)号：US08306082B2

公开(公告)日：2012-11-06

申请号：US12846361

申请日：2010-07-29

申请人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Shinji Tokuyama ,  Koji Katayama ,  Takao Nakamura ,  Takatoshi Ikegami

发明人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Shinji Tokuyama ,  Koji Katayama ,  Takao Nakamura ,  Takatoshi Ikegami

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01S5/0014 ,  H01S5/0021 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3211

摘要： A group-III nitride semiconductor laser device comprises a laser structure including a support base and a semiconductor region, and an electrode provided on the semiconductor region of the laser structure. The support base comprises a hexagonal group-III nitride semiconductor and has a semipolar primary surface, and the semiconductor region is provided on the semipolar primary surface of the support base. The semiconductor region includes a first cladding layer of a first conductivity type gallium nitride-based semiconductor, a second cladding layer of a second conductivity type gallium nitride-based semiconductor, and an active layer. The first cladding layer, the second cladding layer, and the active layer are arranged along a normal axis to the semipolar primary surface. The active layer comprises a gallium nitride-based semiconductor layer. The c-axis of the hexagonal group-III nitride semiconductor of the support base tilts at a finite angle ALPHA with respect to a normal axis toward an a-axis of the hexagonal group-III nitride semiconductor. The laser structure includes first and second fractured faces intersecting with an a-n plane defined by the normal axis and the a-axis of the hexagonal group-III nitride semiconductor. The laser cavity of the group-III nitride semiconductor laser device includes the first and second fractured faces. The laser structure includes first and second surfaces and the first surface is opposite to the second surface, and each of the first and second fractured faces extends from an edge of the first surface to an edge of the second surface.

摘要翻译： III族氮化物半导体激光器件包括具有支撑基极和半导体区域的激光器结构以及设置在激光器结构的半导体区域上的电极。 支撑基底包括六方晶III族氮化物半导体，并且具有半极性主表面，并且半导体区域设置在支撑基底的半极性主表面上。 半导体区域包括第一导电型氮化镓基半导体的第一包覆层，第二导电型氮化镓基半导体的第二包覆层和有源层。 第一包层，第二包覆层和有源层沿着正交轴线配置到半极性主表面。 有源层包括氮化镓基半导体层。 支撑基座的六角形III族氮化物半导体的c轴相对于六边形III族氮化物半导体的a轴的法线轴线以有限角度ALPHA倾斜。 激光结构包括与由六角形III族氮化物半导体的法线轴和a轴限定的a-n平面相交的第一和第二断裂面。 III族氮化物半导体激光器件的激光腔包括第一和第二断裂面。 激光结构包括第一表面和第二表面，并且第一表面与第二表面相对，并且第一和第二断裂面中的每一个从第一表面的边缘延伸到第二表面的边缘。

公开(公告)号：US08207544B2

公开(公告)日：2012-06-26

申请号：US12836144

申请日：2010-07-14

申请人： Yohei Enya ,  Yusuke Yoshizumi ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

发明人： Yohei Enya ,  Yusuke Yoshizumi ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

IPC分类号： H01L33/00 ,  H01L29/04

CPC分类号： H01L21/02458 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2302/00

摘要： A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle ALPHA with respect to the c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes a plurality of GaN-based semiconductor layers. The reference axis is inclined at a first angle ALPHA1 in the range of not less than 10 degrees, and less than 80 degrees from the c-axis of the III-nitride semiconductor toward a first crystal axis, either one of the m-axis and a-axis. The reference axis is inclined at a second angle ALPHA2 in the range of not less than −0.30 degrees and not more than +0.30 degrees from the c-axis of the III-nitride semiconductor toward a second crystal axis, the other of the m-axis and a-axis. The predetermined angle, the first angle, and the second angle have a relation of ALPHA=(ALPHA12+ALPHA22)1/2. Morphology of an outermost surface of the epitaxial semiconductor region includes a plurality of pits. A pit density of the pits is not more than 5×104 cm−2.

摘要翻译： III族氮化物半导体器件具有由III族氮化物半导体构成的支撑基底，具有主要表面沿垂直于相对于III型氮化物半导体的c轴倾斜预定角度ALPHA的参考轴线的第一参考平面延伸， 氮化物半导体，以及设置在支撑基体的主表面上的外延半导体区域。 外延半导体区域包括多个GaN基半导体层。 基准轴在距离III族氮化物半导体的c轴朝向第一晶轴不小于10度且小于80度的范围内以第一角度ALPHA1倾斜，m轴和 a轴。 参考轴在距离III族氮化物半导体的c轴朝向第二晶轴不小于-0.30度且不大于+0.30度的范围内以第二角度ALPHA2倾斜，另一个m- 轴和a轴。 预定角度，第一角度和第二角度具有ALPHA =（ALPHA12 + ALPHA22）1/2的关系。 外延半导体区域的最外表面的形态包括多个凹坑。 坑的坑密度不大于5×104cm-2。

公开(公告)号：US20120148325A1

公开(公告)日：2012-06-14

申请号：US13297701

申请日：2011-11-16

申请人： Keisei Hakamata ,  Hiroyuki Saito ,  Takao Nakamura

发明人： Keisei Hakamata ,  Hiroyuki Saito ,  Takao Nakamura

IPC分类号： B41J11/42

CPC分类号： B41J11/485 ,  B41J13/076

摘要： This invention includes an input operation unit which accepts the operation of selecting a first or a second printing medium and outputs information indicating the selected printing medium, a conveyance path, a conveyance mechanism which conveys the selected printing medium in the conveyance direction, and a control unit. The conveyance mechanism includes a main roller, a driven roller which presses the main roller through the selected printing medium, a rotation member having a cam shape, and an elastic member which deforms to change a pressing force in accordance with the rotational position of the rotation member. The control unit rotates the rotation member to the first rotational position when the first printing medium is selected, and rotates the rotation member to the second rotational position where the pressing force becomes smaller than that at the first rotational position when the second printing medium is selected.

摘要翻译： 本发明包括输入操作单元，其接受选择第一或第二打印介质的操作并输出指示所选择的打印介质的信息，输送路径，在输送方向上传送所选择的打印介质的输送机构，以及控制 单元。 传送机构包括：主辊，通过所选择的打印介质按压主辊的从动辊，具有凸轮形状的旋转构件，以及根据旋转的旋转位置变形以改变按压力的弹性构件 会员。 当选择第一打印介质时，控制单元将旋转构件旋转到第一旋转位置，并且当选择第二打印介质时，将旋转构件旋转到第二旋转位置，在第二旋转位置处按压力变得小于在第一旋转位置处的按压力 。

公开(公告)号：US20110180166A1

公开(公告)日：2011-07-28

申请号：US13060405

申请日：2008-11-04

申请人： Takao Nakamura ,  Akihiro Yamanaka ,  Hiroshi Yukutomo ,  Kenji Fujii

发明人： Takao Nakamura ,  Akihiro Yamanaka ,  Hiroshi Yukutomo ,  Kenji Fujii

IPC分类号： F15D1/00

CPC分类号： B22D17/32 ,  Y10T137/87249

摘要： A hydraulic circuit of an injection cylinder in a die-casting apparatus, which can achieve IN restriction and OUT restriction in a quickly switchable manner with a single circuit and which allows manufacturing of a high-quality molded product. The hydraulic circuit includes: a first pressure oil path supplying pressure oil to the injection cylinder; a second pressure oil path returning the pressure oil from the injection cylinder; a first flow control valve controlling a flow of the pressure oil through the first pressure oil path; a second flow control valve controlling a flow of the pressure oil through the second pressure oil path; a bypass pressure oil path connected to the second pressure oil path for bypassing the second flow control valve; a bypass on-off valve provided on the bypass pressure oil path and opening/closing the bypass pressure oil path with the pressure oil; and a controller controlling each valve.

摘要翻译： 压铸装置中的注射缸的液压回路，其能够通过单个回路以快速切换的方式实现IN限制和OUT限制，并且允许制造高品质的模制产品。 液压回路包括：向注射缸供给压力油的第一压力油路; 第二压力油路将来自注射缸的压力油返回; 控制压力油通过第一压力油路的流量的第一流量控制阀; 控制压力油通过第二压力油路的流量的第二流量控制阀; 连接到所述第二压力油路以绕过所述第二流量控制阀的旁路压力油路; 设置在旁通压力油路上的旁通开闭阀，并且用压力油打开/关闭旁路压力油路; 以及控制每个阀门的控制器。

公开(公告)号：US20110124142A1

公开(公告)日：2011-05-26

申请号：US13019067

申请日：2011-02-01

申请人： Yohei Enya ,  Yusuke Yoshizumi ,  Masaki Ueno ,  Katsushi Akita ,  Takashi Kyono ,  Takamichi Sumitomo ,  Takao Nakamura

发明人： Yohei Enya ,  Yusuke Yoshizumi ,  Masaki Ueno ,  Katsushi Akita ,  Takashi Kyono ,  Takamichi Sumitomo ,  Takao Nakamura

IPC分类号： H01L33/04

CPC分类号： H01L21/02458 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32 ,  H01S5/34333

摘要： In a GaN based semiconductor optical device 11a, the primary surface 13a of the substrate 13 tilts at a tilting angle toward an m-axis direction of the first GaN based semiconductor with respect to a reference axis “Cx” extending in a direction of a c-axis of the first GaN based semiconductor, and the tilting angle is 63 degrees or more, and is less than 80 degrees. The GaN based semiconductor epitaxial region 15 is provided on the primary surface 13a. On the GaN based semiconductor epitaxial region 15, an active layer 17 is provided. The active layer 17 includes one semiconductor epitaxial layer 19. The semiconductor epitaxial layer 19 is composed of InGaN. The thickness direction of the semiconductor epitaxial layer 19 tilts with respect to the reference axis “Cx.” The reference axis “Cx” extends in the direction of the [0001] axis. This structure provides the GaN based semiconductor optical device that can reduces decrease in light emission characteristics due to the indium segregation.

摘要翻译： 在GaN系半导体光学元件11a中，基板13的主表面13a相对于沿c方向延伸的基准轴“Cx”朝向第一GaN基半导体的m轴方向倾斜倾斜 第一GaN基半导体的角度，倾斜角度为63度以上，小于80度。 GaN基半导体外延区域15设置在主表面13a上。 在GaN基半导体外延区域15上，设置有源层17。 有源层17包括一个半导体外延层19.半导体外延层19由InGaN构成。 半导体外延层19的厚度方向相对于基准轴“Cx”倾斜。参考轴“Cx”沿[0001]轴的方向延伸。 这种结构提供可以减少由于铟偏析导致的发光特性的降低的GaN基半导体光学器件。