公开(公告)号：US06423563B2

公开(公告)日：2002-07-23

申请号：US09861535

申请日：2001-05-22

Applicant: Tsuyoshi Fukada ,  Minekazu Sakai ,  Minoru Murata ,  Yukihiro Takeuchi ,  Seiki Aoyama

Inventor： Tsuyoshi Fukada ,  Minekazu Sakai ,  Minoru Murata ,  Yukihiro Takeuchi ,  Seiki Aoyama

IPC: H01L2984

CPC classification number: B81C1/00936 ,  B81B3/0005 ,  B81B2201/0235 ,  B81B2201/025 ,  B81B2203/0136 ,  B81B2203/033 ,  B81B2203/04 ,  B81C2201/0132 ,  B81C2201/053 ,  B81C2201/112 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/084

Abstract: A semiconductor dynamic quantity sensor includes a semiconductor support substrate having a specific resistance equal to or less than 3&OHgr; cm. An insulation film is provided on the support substrate and a semiconductor layer is provided on the support substrate with the insulation film interposed therebetween. The semiconductor layer has a specific resistance equal to or less than 3&OHgr; cm. A movable electrode is provided in the semiconductor layer to be displaced according to a dynamic quantity acting thereto. A fixed electrode is fixedly provided in the semiconductor layer to make a specific gap with the movable electrode and to from a capacitor with the movable electrode. The capacitor has a capacity that changes in response to displacement of the movable electrode to detect the dynamic quantity.

Abstract translation: 半导体动态量传感器包括具有等于或小于3OMEGA cm的电阻率的半导体支撑衬底。 绝缘膜设置在支撑基板上，半导体层设置在支撑基板上，绝缘膜位于支撑基板之间。 半导体层的电阻率等于或小于3OMEGA cm。 可移动电极设置在半导体层中，以根据作用于其的动态量而移位。 在半导体层中固定设置固定电极，与可动电极和可动电极的电容器形成特定的间隙。 电容器具有响应于可动电极的位移而变化以检测动态量的容量。

公开(公告)号：US06404028B1

公开(公告)日：2002-06-11

申请号：US09502241

申请日：2000-02-17

Applicant: Robert E. Hetrick ,  Xia Zhang

Inventor： Robert E. Hetrick ,  Xia Zhang

IPC: H01L2982

CPC classification number: B81B3/0005 ,  B81C1/0096 ,  B81C2201/112 ,  C23C16/26 ,  C23C16/30 ,  Y10T156/108 ,  Y10T156/11

Abstract: A method for fabricating an adhesion-resistant microelectromechanical device is disclosed wherein amorphous hydrogenated carbon is used as a coating or structural material to prevent adhesive failures during the formation and operation of a microelectromechanical device.

Abstract translation: 公开了一种用于制造耐粘附微机电装置的方法，其中无定形氢化碳用作涂层或结构材料，以防止在微机电装置的形成和操作期间的粘合剂故障。

公开(公告)号：US20020055253A1

公开(公告)日：2002-05-09

申请号：US09992939

申请日：2001-11-05

Inventor： Joachim Rudhard

IPC: H01L021/44

CPC classification number: B81B3/0008 ,  B81B3/0086 ,  B81B2201/0235 ,  B81C2201/112

Abstract: A method for producing a micromechanical structure, and a micromechanical structure having a movable structure and a stationary structure made of silicon. In the method for producing the micromechanical structure, in one process step, a superficial metal-silicide layer is produced in the movable structure and/or the stationary structure.

Abstract translation: 微机电结构的制造方法以及具有可移动结构和由硅制成的静止结构的微机械结构。 在制造微机械结构的方法中，在一个工艺步骤中，在可移动结构和/或固定结构中产生表面金属硅化物层。

公开(公告)号：US06290859B1

公开(公告)日：2001-09-18

申请号：US09439103

申请日：1999-11-12

Applicant: James G. Fleming ,  Seethambal S. Mani ,  Jeffry J. Sniegowski ,  Robert S. Blewer

Inventor： James G. Fleming ,  Seethambal S. Mani ,  Jeffry J. Sniegowski ,  Robert S. Blewer

IPC: H01L2100

CPC classification number: B81C1/0096 ,  B81B3/0005 ,  B81B2201/035 ,  B81C1/00674 ,  B81C2201/0176 ,  B81C2201/112 ,  H01H2001/0057

Abstract: A process is disclosed whereby a 5-50-nanometer-thick conformal tungsten coating can be formed over exposed semiconductor surfaces (e.g. silicon, germanium or silicon carbide) within a microelectromechanical (MEM) device for improved wear resistance and reliability. The tungsten coating is formed after cleaning the semiconductor surfaces to remove any organic material and oxide film from the surface. A final in situ cleaning step is performed by heating a substrate containing the MEM device to a temperature in the range of 200-600 ° C. in the presence of gaseous nitrogen trifluoride (NF3). The tungsten coating can then be formed by a chemical reaction between the semiconductor surfaces and tungsten hexafluoride (WF6) at an elevated temperature, preferably about 450° C. The tungsten deposition process is self-limiting and covers all exposed semiconductor surfaces including surfaces in close contact. The present invention can be applied to many different types of MEM devices including microrelays, micromirrors and microengines. Additionally, the tungsten wear-resistant coating of the present invention can be used to enhance the hardness, wear resistance, electrical conductivity, optical reflectivity and chemical inertness of one or more semiconductor surfaces within a MEM device.

Abstract translation: 公开了一种方法，其中可以在微机电（MEM）装置内的暴露的半导体表面（例如硅，锗或碳化硅）上形成5-50纳米厚的共形钨涂层，以改善耐磨性和可靠性。 在清洁半导体表面之后形成钨涂层，以从表面除去任何有机材料和氧化物膜。 通过在含有气态三氟化氮（NF 3）的存在下，将含有MEM装置的基板加热至200-600℃的温度，进行最终的原位清洗步骤。 钨涂层然后可以通过半导体表面和六氟化钨（WF6）之间的化学反应在升高的温度，优选约450℃下形成。钨沉积工艺是自限制的，并且覆盖所有暴露的半导体表面，包括紧密的表面 联系。 本发明可以应用于许多不同类型的MEM装置，包括微型雷达，微镜和微型引擎。 此外，本发明的钨耐磨涂层可用于提高MEM装置内的一个或多个半导体表面的硬度，耐磨性，导电性，光反射率和化学惰性。

公开(公告)号：US06287885B1

公开(公告)日：2001-09-11

申请号：US09306381

申请日：1999-05-06

Applicant: Hiroshi Muto ,  Tsuyoshi Fukada ,  Masakazu Terada ,  Hiroshige Sugito ,  Masakazu Kanosue ,  Shinji Yoshihara ,  Shoji Ozoe ,  Seiji Fujino ,  Minekazu Sakai ,  Minoru Murata ,  Yukihiro Takeuchi ,  Seiki Aoyama ,  Toshio Yamamoto ,  Kazushi Asami

Inventor： Hiroshi Muto ,  Tsuyoshi Fukada ,  Masakazu Terada ,  Hiroshige Sugito ,  Masakazu Kanosue ,  Shinji Yoshihara ,  Shoji Ozoe ,  Seiji Fujino ,  Minekazu Sakai ,  Minoru Murata ,  Yukihiro Takeuchi ,  Seiki Aoyama ,  Toshio Yamamoto ,  Kazushi Asami

IPC: H01L21302

CPC classification number: B81C1/00936 ,  B81B3/0005 ,  B81B2201/0235 ,  B81B2201/025 ,  B81B2203/0136 ,  B81B2203/033 ,  B81B2203/04 ,  B81C2201/0132 ,  B81C2201/053 ,  B81C2201/112 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/084

Abstract: In a method for manufacturing a semiconductor acceleration sensor, a movable portion including a mass portion and movable electrodes is formed in a single crystal silicon thin film provided on a silicon wafer through an insulation film by etching both the single crystal silicon thin film and the silicon wafer. In this case, the movable portion is finally defined at a movable portion defining step that is carried out in a vapor phase atmosphere. Accordingly, the movable portion is prevented from sticking to other regions due to etchant during the manufacture thereof.

公开(公告)号：US6024801A

公开(公告)日：2000-02-15

申请号：US761579

申请日：1996-12-09

Applicant: Robert M. Wallace ,  Monte A. Douglas

Inventor： Robert M. Wallace ,  Monte A. Douglas

IPC: B08B7/00 ,  B81B3/00 ,  B81C1/00 ,  G02B26/08 ,  H01L21/304 ,  B08B3/00

CPC classification number: B81C1/0096 ,  B08B7/00 ,  B08B7/0021 ,  B81B3/0005 ,  B81C1/00857 ,  G02B26/0841 ,  B81C2201/112 ,  B81C2201/117

Abstract: A method of cleaning and treating a device, including those of the micromechanical (10) and semiconductor type. The surface of a device, such as the landing electrode (22) of a digital micromirror device (10), is first cleaned with a supercritical fluid (SCF) in a chamber (50) to remove soluble chemical compounds, and then maintained in the SCF chamber until and during the subsequent passivation step. Passivants including PFDA and PFPE are suitable for the present invention. By maintaining the device in the SCF chamber, and without exposing the device to, for instance, the ambient of a clean room, organic and inorganic contaminants cannot be deposited upon the cleaned surface prior to the passivation step. The present invention derives technical advantages by providing an improved passivated surface that is suited to extend the useful operation life of devices, including those of the micromechanical type, reducing stiction forces between contacting elements such as a mirror and its landing electrode. The present invention is also suitable for cleaning and passivating other surfaces including a surface of semiconductor wafers, and the surface of a hard disk memory drive.

Abstract translation: 一种清洁和处理包括微机械（10）和半导体类型的装置的方法。 首先在室（50）中用超临界流体（SCF）清洁诸如数字微镜装置（10）的着陆电极（22）的装置的表面以除去可溶性化合物，然后保持在 SCF室直到和之后的钝化步骤。 包括PFDA和PFPE的钝化剂适用于本发明。 通过将装置保持在SCF室中，并且在不将装置暴露于例如洁净室的环境的情况下，在钝化步骤之前，有机和无机污染物不能沉积在清洁的表面上。 本发明通过提供一种改进的钝化表面来提供技术优点，所述钝化表面适于延长包括微机械型的装置的有用使用寿命，从而降低诸如反射镜和其着陆电极的接触元件之间的静摩擦力。 本发明也适用于清洁和钝化包括半导体晶片的表面的其它表面以及硬盘存储器驱动器的表面。

公开(公告)号：US20240067520A1

公开(公告)日：2024-02-29

申请号：US18239986

申请日：2023-08-30

Applicant: Infineon Technologies AG

Inventor： Fabian Streb ,  Johann Straßer ,  Hans-Jörg Timme ,  Marc Füldner ,  Arnaud Walther ,  Hutomo Suryo Wasisto

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00952 ,  B81B3/0005 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C2201/0114 ,  B81C2201/0133 ,  B81C2201/0176 ,  B81C2201/112

Abstract: An encapsulated MEMS device and a method for manufacturing the MEMS device are provided. The method comprises providing a cavity structure having an inner volume comprising a plurality of MEMS elements, which are relatively displaceable with respect to each other, and having an opening structure to the inner volume, depositing a Self-Assembled Monolayer (SAM) through the opening structure onto exposed surfaces within the inner volume of the cavity structure, and closing the cavity structure by applying a layer structure on the opening structure for providing a hermetically closed cavity.

公开(公告)号：US11851318B2

公开(公告)日：2023-12-26

申请号：US17237575

申请日：2021-04-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Yi-Chuan Teng ,  Ching-Kai Shen ,  Jung-Kuo Tu ,  Wei-Cheng Shen ,  Xin-Hua Huang ,  Wei-Chu Lin

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0005 ,  B81B3/001 ,  B81C1/00968 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/0392 ,  B81B2203/04 ,  B81C2201/112 ,  B81C2203/036

Abstract: A microelectromechanical system device includes a substrate, a dielectric layer, an electrode, a surface modification layer and a membrane. The dielectric layer is formed on the substrate, and is formed with a cavity that is defined by a cavity-defining wall. The electrode is formed in the dielectric layer. The surface modification layer covers the cavity-defining wall, and has a plurality of hydrophobic end groups. The membrane is connected to the dielectric layer, and seals the cavity. The membrane is movable toward or away from the electrode. A method for making a microelectromechanical system device is also provided.

公开(公告)号：US20230264945A1

公开(公告)日：2023-08-24

申请号：US18308950

申请日：2023-04-28

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Hsi-Cheng HSU ,  Kuo-Hao LEE ,  Jui-Chun WENG ,  Ching-Hsiang HU ,  Ji-Hong CHIANG ,  Lavanya SANAGAVARAPU ,  Chia-Yu LIN ,  Chia-Chun HUNG ,  Jia-Syuan LI ,  Yu-Pei CHIANG

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0005 ,  B81C1/00968 ,  B81C2201/112 ,  B81C2201/115

Abstract: A micro-electromechanical-system (MEMS) device may be formed to include an anti-stiction polysilicon layer on one or more moveable MEMS structures of a device wafer of the MEMS device to reduce, minimize, and/or eliminate stiction between the moveable MEMS structures and other components or structures of the MEMS device. The anti-stiction polysilicon layer may be formed such that a surface roughness of the anti-stiction polysilicon layer is greater than the surface roughness of a bonding polysilicon layer on the surfaces of the device wafer that are to be bonded to a circuitry wafer of the MEMS device. The higher surface roughness of the anti-stiction polysilicon layer may reduce the surface area of the bottom of the moveable MEMS structures, which may reduce the likelihood that the one or more moveable MEMS structures will become stuck to the other components or structures.

公开(公告)号：US11667517B2

公开(公告)日：2023-06-06

申请号：US16908243

申请日：2020-06-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Chia Liu ,  Chia-Hua Chu ,  Chun-Wen Cheng

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0006 ,  B81B7/0051 ,  B81C1/00246 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0176 ,  B81C2201/0181 ,  B81C2201/112 ,  B81C2203/0714 ,  B81C2203/0735

Abstract: Representative methods for sealing MEMS devices include depositing insulating material over a substrate, forming conductive vias in a first set of layers of the insulating material, and forming metal structures in a second set of layers of the insulating material. The first and second sets of layers are interleaved in alternation. A dummy insulating layer is provided as an upper-most layer of the first set of layers. Portions of the first and second set of layers are etched to form void regions in the insulating material. A conductive pad is formed on and in a top surface of the insulating material. The void regions are sealed with an encapsulating structure. At least a portion of the encapsulating structure is laterally adjacent the dummy insulating layer, and above a top surface of the conductive pad. An etch is performed to remove at least a portion of the dummy insulating layer.