公开(公告)号：US3866077A

公开(公告)日：1975-02-11

申请号：US26913972

申请日：1972-07-05

Applicant: NAT RES DEV

Inventor： BAKER FRANCIS SIDNEY ,  HARRISON CHARLES RICHARD ,  OSBORN ANTHONY RAYMOND ,  WILLIAMS JOHN

IPC: G01Q30/08 ,  G01Q30/16 ,  G01Q70/12 ,  H01J1/304 ,  H01J37/073 ,  H01J37/24 ,  H01J1/16

CPC classification number: H01J1/304 ,  H01J37/073 ,  H01J37/241 ,  H01J2201/30457

Abstract: A carbon filament such as a carbon fibre or graphite whisker is used as a source of field emission electrons in an electronic device such as an electron microscope or an electron beam machining device. A vacuum of only 10 7 torr is required, and electrical noise in the beam may be reduced by momentarily heating the source in vacuum before use, and/or by using an electrical current stabilisation circuit.

公开(公告)号：US20160203937A1

公开(公告)日：2016-07-14

申请号：US14594949

申请日：2015-01-12

Applicant: UChicago Argonne, LLC

Inventor： Anirudha V. Sumant ,  Sergey V. Baryshev ,  Sergey P. Antipov

IPC: H01J1/304 ,  H01J9/12 ,  H01J1/34 ,  H01J9/02

CPC classification number: H01J1/34 ,  H01J1/3048 ,  H01J9/025 ,  H01J9/12 ,  H01J2201/30457 ,  H01J2201/3423

Abstract: A method of forming a field emitter comprises disposing a first layer on a substrate. The first layer is seeded with nanodiamond particles. The substrate with the first layer disposed thereon is maintained at a first temperature and a first pressure in a mixture of gases which includes nitrogen. The first layer is exposed to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, which has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %. The field emitter has about 1012 to about 1014 emitting sites per cm2. A photocathode can also be formed similarly by forming a nitrogen doped ultrananocrystalline diamond film on a substrate similar to the field emitter, and then hydrogen terminating the film. The photocathode is responsive to near ultraviolet light as well as to visible light.

Abstract translation: 形成场致发射体的方法包括在衬底上设置第一层。 第一层用纳米金刚石颗粒接种。 其上设置有第一层的衬底在包括氮气的气体混合物中保持在第一温度和第一压力。 将第一层暴露于微波等离子体以在第一层上形成氮掺杂的超微晶金刚石膜，其具有在约0.05原子％至约0.5原子％范围内的氮的百分比。 场发射体每平方厘米具有约1012至约1014个发射点。 也可以类似地通过在类似于场发射体的衬底上形成氮掺杂的超微晶金刚石膜，然后氢终止膜而形成光电阴极。 光电阴极对近紫外光以及可见光有反应。

公开(公告)号：US08154185B2

公开(公告)日：2012-04-10

申请号：US11704910

申请日：2007-02-12

Applicant: Wanli Yang ,  Jason D. Fabbri ,  Nicholas A. Melosh ,  Zahid Hussain ,  Zhi-Xun Shen

Inventor： Wanli Yang ,  Jason D. Fabbri ,  Nicholas A. Melosh ,  Zahid Hussain ,  Zhi-Xun Shen

IPC: H01J1/13 ,  H01J1/14 ,  H01J9/04 ,  H01J9/00 ,  H01J1/30

CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30457

Abstract: Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.

Abstract translation: 提供基于金刚石单层的电子发射体，优选自组装的较高的类金刚石单层。 已经证明使用这种类金刚石单层的高强度电子发射，特别是当单层由更高的金刚石组成时。 这种类金刚石单层的应用可以改变衬底的带结构，并且发射单色电子，并且高强度电子发射也可以极大地提高应用于工业和商业应用的场效应电子发射体的效率。

公开(公告)号：US20080252196A1

公开(公告)日：2008-10-16

申请号：US12093293

申请日：2006-06-28

Applicant: Yoon Ho Song ,  Jin Woo Jeong ,  Dae Jun Kim ,  Jin Ho Lee ,  Kwang Yong Kang

Inventor： Yoon Ho Song ,  Jin Woo Jeong ,  Dae Jun Kim ,  Jin Ho Lee ,  Kwang Yong Kang

IPC: H01J1/62

CPC classification number: G09G3/22 ,  B82Y10/00 ,  G09G2300/08 ,  H01J31/127 ,  H01J2201/30457 ,  H01J2201/30469 ,  H01J2201/319

Abstract: Provided is a field emission display (FED) in which field emission devices are applied to a flat panel display. The FED includes: a cathode plate including a substrate, first and second thin film transistors (TFTs) that are serially connected on the substrate, a field emitter disposed on a drain electrode of the second TFT, a gate insulating layer having a gate hole surrounding the field emitter, and field emission gate electrodes disposed on the gate insulating layer; and an anode plate including a substrate, and red, green, and blue phosphors disposed on the substrate, wherein the cathode plate and the anode plate are vacuum-packaged parallel and opposite to each other. According to the present invention, uniformity of the FED panel can be significantly improved, and an inherent source-drain leakage current of the TFT can be significantly reduced, so that a contrast ratio of the FED can be significantly enhanced.

Abstract translation: 提供了一种场致发射显示器（FED），其中场发射装置被应用于平板显示器。 FED包括：阴极板，包括基板，串联连接在基板上的第一和第二薄膜晶体管（TFT），设置在第二TFT的漏电极上的场致发射体，栅极绝缘层，具有围绕 所述场致发射体和设置在所述栅极绝缘层上的场致发射栅电极; 以及包括基板的阳极板和设置在基板上的红色，绿色和蓝色荧光体，其中阴极板和阳极板被彼此平行并相对地真空包装。 根据本发明，可以显着提高FED面板的均匀性，并且能够显着地降低TFT的固有源漏漏电流，从而可以显着提高FED的对比度。

公开(公告)号：US07306671B2

公开(公告)日：2007-12-11

申请号：US10784915

申请日：2004-02-24

Applicant: Jeremy E. Dahl ,  Robert M. Carlson ,  Shenggao Liu

Inventor： Jeremy E. Dahl ,  Robert M. Carlson ,  Shenggao Liu

IPC: C30B29/02

CPC classification number: H01J1/3048 ,  B82Y10/00 ,  B82Y30/00 ,  C07C4/00 ,  C07C7/04 ,  C07C7/12 ,  C07C7/135 ,  C07C13/64 ,  C07C17/10 ,  C07C17/16 ,  C07C17/383 ,  C07C17/395 ,  C07C23/20 ,  C07C39/17 ,  C07C47/347 ,  C07C49/423 ,  C07C205/05 ,  C07C211/50 ,  C07C2603/54 ,  C07C2603/90 ,  C08G61/00 ,  C08G61/02 ,  C08G83/00 ,  C08L65/00 ,  H01J2201/30457 ,  H01L23/3732 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: Novel uses of diamondoid-containing materials in the field of microelectronics are disclosed. Embodiments include, but are not limited to, thermally conductive films in integrated circuit packaging, low-k dielectric layers in integrated circuit multilevel interconnects, thermally conductive adhesive films, thermally conductive films in thermoelectric cooling devices, passivation films for integrated circuit devices (ICs), and field emission cathodes. The diamondoids employed in the present invention may be selected from lower diamondoids, as well as the newly provided higher diamondoids, including substituted and unsubstituted diamondoids. The higher diamondoids include tetramantane, peritamantane, hexamantane, heptamantane, octamantane, nonamantane, decamantane, and undecamantane. The diamondoid-containing material may be fabricated as a diamondoid-containing polymer, a diamondoid-containing sintered ceramic, a diamondoid ceramic composite, a CVD diamondoid film, a self-assembled diamondoid film, and a diamondoid-fullerene composite.

Abstract translation: 公开了在微电子学领域中含有金刚石的材料的新用途。 实施例包括但不限于集成电路封装中的导热膜，集成电路多层互连中的低k电介质层，导热粘合剂膜，热电冷却器件中的导热膜，用于集成电路器件（IC）的钝化膜 和场致发射阴极。 本发明中使用的类金刚石可以选自下面的金刚石，以及新提供的更高的金刚石，包括取代和未取代的金刚石。 较高的金刚石包括四聚烷，四金刚烷，六金刚烷，七金刚烷，八甲烷，非金刚烷，十烷和十一烷。 含金刚石的材料可以制造为含有金刚石的聚合物，含金刚石的烧结陶瓷，金刚石陶瓷复合材料，CVD金刚石膜，自组装的金刚石膜和类金刚石 - 富勒烯复合材料。

公开(公告)号：US07273598B2

公开(公告)日：2007-09-25

申请号：US10892080

申请日：2004-07-14

Applicant: Jeremy E. Dahl ,  Robert M. Carlson ,  Shenggao Liu

Inventor： Jeremy E. Dahl ,  Robert M. Carlson ,  Shenggao Liu

IPC: C30B29/04

CPC classification number: C07C4/00 ,  B82Y10/00 ,  B82Y30/00 ,  C07C7/04 ,  C07C7/12 ,  C07C7/135 ,  C07C13/64 ,  C07C17/10 ,  C07C17/16 ,  C07C17/383 ,  C07C17/395 ,  C07C23/20 ,  C07C39/17 ,  C07C47/347 ,  C07C49/423 ,  C07C205/05 ,  C07C211/50 ,  C07C2603/54 ,  C07C2603/90 ,  C08G61/00 ,  C08G61/02 ,  C08G83/00 ,  C08L65/00 ,  H01J1/3048 ,  H01J2201/30457 ,  H01L23/3732 ,  H01L23/4334 ,  H01L23/49513 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L35/22 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

Abstract: Novel uses of diamondoid-containing materials in the field of microelectronics are disclosed. Embodiments include, but are not limited to, passivation films for integrated circuit devices (ICs). The diamondoids employed in the present invention may be selected from lower diamondoids, as well as the newly provided higher diamondoids, including substituted and unsubstituted diamondoids. The higher diamondoids include tetramantane, pentamantane, hexamantane, heptamantane, octamantane, nonamantane, decamantane, and undecamantane. The diamondoid-containing material may be fabricated as a diamondoid-containing polymer, a diamondoid-containing sintered ceramic, a diamondoid ceramic composite, a CVD diamondoid film, a self-assembled diamondoid film, and a diamondoid-fullerene composite.

Abstract translation: 公开了在微电子学领域中含有金刚石的材料的新用途。 实施例包括但不限于用于集成电路器件（IC）的钝化膜。 本发明中使用的类金刚石可以选自下面的金刚石，以及新提供的更高的金刚石，包括取代和未取代的金刚石。 较高的类金刚石包括四聚烷，五金刚，六金刚，七金刚烷，八甲烷，非金刚烷，十烷金和十一烷。 含金刚石的材料可以制造为含有金刚石的聚合物，含金刚石的烧结陶瓷，金刚石陶瓷复合材料，CVD金刚石膜，自组装的金刚石膜和类金刚石 - 富勒烯复合材料。

公开(公告)号：US20050287689A1

公开(公告)日：2005-12-29

申请号：US11150207

申请日：2005-06-13

Applicant: Takashi Iwaki ,  Takeo Tsukamoto

Inventor： Takashi Iwaki ,  Takeo Tsukamoto

IPC: B01J23/89 ,  B01J37/02 ,  B82B3/00 ,  B82Y30/00 ,  B82Y40/00 ,  B82Y99/00 ,  C01B31/02 ,  D01F9/127 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01L21/00 ,  H01L21/28 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC classification number: B82Y40/00 ,  B82Y10/00 ,  B82Y30/00 ,  C01B32/162 ,  H01J9/025 ,  H01J2201/30457 ,  H01J2201/30469

Abstract: Carbon fibers having superior properties are very uniformly formed on a substrate. A method for manufacturing carbon fibers is provided which has the steps of disposing laminates formed of a first catalyst material and particles containing a second catalyst material on the substrate, causing a reaction between the first and the second catalyst materials to form catalyst particles therefrom, and causing a reaction between the catalyst particles thus obtained and a raw material for the carbon fibers. As a result, the carbon fibers are formed on the substrate.

Abstract translation: 在基材上非常均匀地形成具有优异性能的碳纤维。 提供了一种制造碳纤维的方法，其具有如下步骤：将由第一催化剂材料形成的层压体和含有第二催化剂材料的颗粒设置在基板上，引起第一和第二催化剂材料之间的反应从其形成催化剂颗粒;以及 引起如此获得的催化剂颗粒与碳纤维的原料之间的反应。 结果，在基板上形成碳纤维。

公开(公告)号：US06882094B2

公开(公告)日：2005-04-19

申请号：US09784910

申请日：2001-02-16

Applicant: Steven Dimitrijevic ,  James C. Withers ,  Raouf O. Loutfy

Inventor： Steven Dimitrijevic ,  James C. Withers ,  Raouf O. Loutfy

IPC: B82B1/00 ,  C01B31/02 ,  H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01J1/14 ,  H01J1/146 ,  H01J9/00 ,  H01J9/04 ,  H01J19/06

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J1/3044 ,  H01J9/025 ,  H01J2201/30457 ,  H01J2201/30469 ,  Y10S977/745 ,  Y10S977/939

Abstract: The present invention is directed to a nanotube coated with diamond or diamond-like carbon, a field emitter cathode comprising same, and a field emitter comprising the cathode. It is also directed to a method of preventing the evaporation of carbon from a field emitter comprising a cathode comprised of nanotubes by coating the nanotube with diamond or diamond-like carbon. In another aspect, the present invention is directed to a method of preventing the evaporation of carbon from an electron field emitter comprising a cathode comprised of nanotubes, which method comprises coating the nanotubes with diamond or diamond-like carbon.

Abstract translation: 本发明涉及涂覆有金刚石或类金刚石碳的纳米管，包含该金刚石或类金刚石碳的场致发射极阴极以及包括阴极的场致发射体。 还涉及一种通过用金刚石或类金刚石碳涂覆纳米管来防止来自包括由纳米管组成的阴极的场发射体蒸发碳的方法。 另一方面，本发明涉及一种防止碳从包含由纳米管构成的阴极的电子发射体蒸发的方法，该方法包括用金刚石或类金刚石碳涂覆纳米管。

公开(公告)号：US06783589B2

公开(公告)日：2004-08-31

申请号：US10047044

申请日：2002-01-14

Applicant: Jeremy E. Dahl ,  Robert M. Carlson ,  Shenggao Liu

Inventor： Jeremy E. Dahl ,  Robert M. Carlson ,  Shenggao Liu

IPC: C30B2904

CPC classification number: H01J1/3048 ,  B82Y10/00 ,  B82Y30/00 ,  C07C4/00 ,  C07C7/04 ,  C07C7/12 ,  C07C7/135 ,  C07C13/64 ,  C07C17/10 ,  C07C17/16 ,  C07C17/383 ,  C07C17/395 ,  C07C23/20 ,  C07C39/17 ,  C07C47/347 ,  C07C49/423 ,  C07C205/05 ,  C07C211/50 ,  C07C2603/54 ,  C07C2603/90 ,  C08G61/00 ,  C08G61/02 ,  C08G83/00 ,  C08L65/00 ,  H01J2201/30457 ,  H01L23/3732 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: Novel uses of diamondoid-containing materials in the field of microelectronics are disclosed. Embodiments include, but are not limited to, thermally conductive films in integrated circuit packaging, low-k dielectric layers in integrated circuit multilevel interconnects, thermally conductive adhesive films, thermally conductive films in thermoelectric cooling devices, passivation films for integrated circuit devices (ICs), and field emission cathodes. The diamondoids employed in the present invention may be selected from lower diamondoids, as well as the newly provided higher diamondoids, including substituted and unsubstituted diamondoids. The higher diamondoids include tetramantane, pentamantane, hexamantane, heptamantane, octamantane, nonamantane, decamantane, and undecamantane. The diamondoid-containing material may be fabricated as a diamondoid-containing polymer, a diamondoid-containing sintered ceramic, a diamondoid ceramic composite, a CVD diamondoid film, a self-assembled diamondoid film, and a diamondoid-fullerene composite.

Abstract translation: 公开了在微电子学领域中含有金刚石的材料的新用途。 实施例包括但不限于集成电路封装中的导热膜，集成电路多层互连中的低k电介质层，导热粘合剂膜，热电冷却器件中的导热膜，用于集成电路器件（IC）的钝化膜 和场致发射阴极。 本发明中使用的类金刚石可以选自下面的金刚石，以及新提供的更高的金刚石，包括取代和未取代的金刚石。 较高的类金刚石包括四聚烷，五金刚，六金刚，七金刚烷，八甲烷，非金刚烷，十烷金和十一烷。 含金刚石的材料可以制造为含有金刚石的聚合物，含金刚石的烧结陶瓷，金刚石陶瓷复合材料，CVD金刚石膜，自组装的金刚石膜和类金刚石 - 富勒烯复合材料。

公开(公告)号：US06717340B2

公开(公告)日：2004-04-06

申请号：US10254504

申请日：2002-09-26

Applicant: Michiyo Nishimura

Inventor： Michiyo Nishimura

IPC: H01J102

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J31/127 ,  H01J2201/30446 ,  H01J2201/30457 ,  H01J2201/30469

Abstract: An electron-emitting device having a small electron beam size is proposed. In order to provide a high definition image display device having high image quality by utilizing this type of electron-emitting device and an electron source, a cathode electrode (2) has an opening which is trenched in a portion thereof, and further, the depth at which the opening is trenched is deep at a peripheral portion of the opening bottom face, and shallow at a central portion of the opening bottom face. A surface of an electron-emitting material is formed in a portion deeper than a boundary surface between the cathode electrode and an insulating layer.

Abstract translation: 提出了具有小电子束尺寸的电子发射器件。 为了通过利用这种类型的电子发射器件和电子源来提供具有高图像质量的高分辨率图像显示装置，阴极电极（2）具有在其一部分中被沟槽的开口，此外，深度 开口被挖槽的开口底面的周边部分是深的，并且在开口底面的中心部分处浅。 电子发射材料的表面形成在比阴极和绝缘层之间的边界面更深的部分。