Fabrication method of semiconductor integrated circuit device
    142.
    发明授权
    Fabrication method of semiconductor integrated circuit device 有权
    半导体集成电路器件的制造方法

    公开(公告)号:US06893801B2

    公开(公告)日:2005-05-17

    申请号:US10753354

    申请日:2004-01-09

    摘要: On the occasion of the aligning process to transfer a predetermined pattern to a semiconductor wafer by irradiating a photoresist on the semiconductor wafer with an aligning laser beam of the modified lighting via a photomask MK, the photomask MK allocating, to provide periodicity, the main apertures to transfer the predetermined pattern as the apertures formed by removing a part of the half-tone film on the mask substrate and the auxiliary apertures not resolved on the semiconductor wafer as the apertures formed by removing a part of the half-tone film is used to improve the resolution of the pattern.

    摘要翻译: 在通过经由光掩模MK照射经修改的照明的定向激光束在半导体晶片上照射光致抗蚀剂以将预定图案转印到半导体晶片的对准处理的情况下,光掩模MK分配以提供周期性的主孔 通过去除掩模基板上的半色调膜的一部分而形成的孔,并且通过将半色调膜的一部分形成的孔用于 提高模式的分辨率。