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公开(公告)号：US20180090676A1
公开(公告)日：2018-03-29
申请号：US15712661
申请日：2017-09-22
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI
Abstract: A magnetoresistance effect element configured to produce magnetoresistance (MR) ratio higher than that of tunnel magneto resistance (TMR) element using tunnel barrier in the related art under a high bias voltage is provided. A magnetoresistance effect element which includes a laminate in which: an underlayer; a first ferromagnetic metal layer; tunnel barrier layer; and second ferromagnetic metal layer are laminated in this order, wherein the underlayer is made of VN, TaN, or mixed crystals thereof, and the tunnel barrier layer is made of compound which has a spinel structure in which the arrangement of cations is disordered and is represented by the following composition formula (1) is provided: (1) AxB2Oy, where A represents divalent cations of two or more types of non-magnetic element, B represents an aluminum ion, x represents number which satisfies 0
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公开(公告)号：US20180040815A1
公开(公告)日：2018-02-08
申请号：US15554089
申请日：2016-03-29
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI
CPC classification number: H01L43/08 , G01R33/09 , G01R33/098 , G11B5/39 , H01F10/14 , H01F10/16 , H01F10/26 , H01F10/32 , H01F10/324 , H01L27/105 , H01L29/82 , H01L43/10
Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a composition formula of AB2Ox (0
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公开(公告)号：US20160293740A1
公开(公告)日：2016-10-06
申请号：US15038281
申请日：2014-11-19
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI , Tohru OIKAWA
CPC classification number: H01L29/66984 , G01R33/098 , G11B5/3909 , G11B2005/3996 , G11C11/161 , H01L29/0843 , H01L29/0895 , H01L29/82 , H01L43/08 , H01L43/12
Abstract: The magnetoresistive element includes a semiconductor channel layer, a pinned layer disposed on the semiconductor channel layer via a first tunnel layer, a free layer disposed on the semiconductor channel layer via a second tunnel layer, wherein the semiconductor channel layer includes a first region containing an interface with the first tunnel layer, a second region containing an interface with the second tunnel layer, and a third region, impurity concentrations in the first and second regions are higher than 1×1019 cm−3, an impurity concentration in the third region is 1×1019 cm−3 or less, the first and second regions are separated by the third region, and the impurity concentrations in the first and second regions decrease in the thickness direction of the semiconductor channel layer from the interface between the semiconductor channel layer and the first tunnel layer and the interface between the semiconductor channel layer and the second tunnel layer.
Abstract translation: 磁阻元件包括半导体沟道层，经由第一隧道层设置在半导体沟道层上的钉扎层，经由第二隧道层设置在半导体沟道层上的自由层，其中半导体沟道层包括含有 与第一隧道层接口，第二区域包含与第二隧道层的界面，以及第三区域，第一和第二区域中的杂质浓度高于1×1019cm-3，第三区域中的杂质浓度为 1×1019cm-3以下的第1区域和第2区域被第3区域隔开，第1区域和第2区域的杂质浓度在半导体沟道层的厚度方向上从半导体沟道层和 第一隧道层和半导体沟道层与第二隧道层之间的界面。
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公开(公告)号：US20160154071A1
公开(公告)日：2016-06-02
申请号：US14941062
申请日：2015-11-13
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI
CPC classification number: G01R33/093 , A61B5/05 , A61B2562/0223 , G11B5/3906 , G11B5/3929 , G11B5/3945 , G11B5/398 , H01L43/08
Abstract: A magnetic sensor includes a channel layer, a magnetization free layer placed on a first section of the channel layer, and a magnetization-fixed layer placed on a second section of the channel layer. The areal resistance of the interface between the channel layer and the magnetization free layer is lower than the areal resistance of the interface between the channel layer and the magnetization-fixed layer.
Abstract translation: 磁传感器包括沟道层，放置在沟道层的第一部分上的无磁化层和放置在沟道层的第二部分上的磁化固定层。 沟道层与无磁化层之间的界面的面积电阻低于沟道层与磁化固定层之间界面的面积电阻。
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145.发明申请SPIN CONDUCTION ELEMENT AND MAGNETIC SENSOR AND MAGNETIC HEAD USING SPIN CONDUCTION 有权旋转导体元件和磁传感器及使用旋转导体的磁头公开(公告)号：US20130258524A1
公开(公告)日：2013-10-03
申请号：US13799229
申请日：2013-03-13
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI , Tohru OIKAWA , Hayato KOIKE
Abstract: A spin conduction element includes a main channel layer having a first electrode, a second electrode, a third electrode, a fourth electrode, a fifth electrode, and a sixth electrode, and extending in a first direction. Spins are injected into the main channel layer from a second ferromagnetic layer constituting the second electrode and a fourth ferromagnetic layer constituting the fourth electrode, and a spin current is detected as a voltage in a third ferromagnetic layer constituting the third electrode.
Abstract translation: 自旋导电元件包括具有第一电极，第二电极，第三电极，第四电极，第五电极和第六电极并沿第一方向延伸的主通道层。 自旋从构成第二电极的第二铁磁层和构成第四电极的第四铁磁层注入主沟道层，并且在构成第三电极的第三铁磁层中检测自旋电流作为电压。
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Patent Agency Ranking
公开(公告)号：US20240365684A1
公开(公告)日：2024-10-31
申请号：US18771471
申请日：2024-07-12
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI
IPC: H10N52/00 , G01R33/09 , G11B5/39 , G11C11/16 , G11C11/18 , H01F10/32 , H01L27/105 , H01L29/82 , H03B15/00 , H10B61/00 , H10N50/10 , H10N50/80 , H10N50/85 , H10N52/01 , H10N52/80
CPC classification number: H10N52/00 , G01R33/098 , G11B5/39 , G11C11/161 , G11C11/1675 , G11C11/1697 , G11C11/18 , H01F10/32 , H01F10/3254 , H01F10/329 , H01L27/105 , H01L29/82 , H03B15/00 , H03B15/006 , H10B61/00 , H10N50/10 , H10N50/80 , H10N50/85 , H10N52/01 , H10N52/80 , H01F10/3286
Abstract: This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.
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公开(公告)号：US20230416905A9
公开(公告)日：2023-12-28
申请号：US17348238
申请日：2021-06-15
Applicant: TDK CORPORATION
Inventor： Tsuyoshi SUZUKI , Katsuyuki NAKADA , Tomoyuki SASAKI
CPC classification number: C23C14/54 , C23C16/52 , C23C14/34 , G06F30/27 , G06F2111/10
Abstract: A film deposition system according to the present embodiment includes a film deposition apparatus, and a computer, in which the film deposition apparatus includes a film deposition chamber in which a plurality of deposition species are installable, and the computer includes a calculation region that calculates based on a calculation model having an Ising model or QUBO, and predict a time required for film deposition when a disposition of the deposition species is set.
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公开(公告)号：US20230392253A1
公开(公告)日：2023-12-07
申请号：US18229332
申请日：2023-08-02
Applicant: TDK CORPORATION
Inventor： Tsuyoshi SUZUKI , Katsuyuki NAKADA , Tomoyuki SASAKI
CPC classification number: C23C14/54 , C23C16/52 , G06F2111/10 , C23C14/34 , G06F30/27
Abstract: A film deposition system according to the present embodiment includes a film deposition apparatus, and a computer, in which the film deposition apparatus includes a film deposition chamber in which a plurality of deposition species are installable, and the computer includes a calculation region that calculates based on a calculation model having an Ising model or QUBO, and predict a time required for film deposition when a disposition of the deposition species is set.
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公开(公告)号：US20230389442A1
公开(公告)日：2023-11-30
申请号：US18232941
申请日：2023-08-11
Applicant: TDK CORPORATION
Inventor： Yugo ISHITANI , Tomoyuki SASAKI , Yohei SHIOKAWA
CPC classification number: H10N50/10 , G11C11/161 , G11C11/1675 , G11C11/1673 , H10B61/22 , H10N50/01 , H10N50/80 , H10N50/85
Abstract: A magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer which is located in a first direction with respect to the spin-orbit torque wiring and in which spins are injected from the spin-orbit torque wiring. The spin-orbit torque wiring has a plurality of spin generation layers and insertion layers located between the plurality of spin generation layers in the first direction. The insertion layers have a lower electrical resistivity than the spin generation layers.
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公开(公告)号：US20230354621A1
公开(公告)日：2023-11-02
申请号：US18344150
申请日：2023-06-29
Applicant: TDK CORPORATION
Inventor： Zhenyao TANG , Tomoyuki SASAKI
CPC classification number: H10B99/00 , G01R33/093 , G01R33/098 , H01L27/105 , H10B61/22 , H10N50/10 , H10N50/85
Abstract: A TMR element includes a magnetic tunnel junction, a side wall portion that covers a side surface of the magnetic tunnel junction, and a minute particle region that is disposed in the side wall portion. The side wall portion includes an insulation material. The minute particle region includes the insulation material and a plurality of minute magnetic metal particles that are dispersed in the insulation material. The minute particle region is electrically connected in parallel with the magnetic tunnel junction.
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