公开(公告)号：US20230175136A1

公开(公告)日：2023-06-08

申请号：US18101666

申请日：2023-01-26

Applicant: ASM IP Holding B.V.

Inventor： Dieter Pierreux ,  Werner Knaepen ,  Bert Jongbloed ,  Jeroen Fluit

IPC: C23C16/48 ,  C23C16/455 ,  C23C16/44 ,  C23C16/458

CPC classification number: C23C16/48 ,  C23C16/45553 ,  C23C16/4405 ,  C23C16/4583

Abstract: The disclosure relates to a substrate processing apparatus, comprising: a first reactor constructed and arranged to process a rack with a plurality of substrates therein; a second reactor constructed and arranged to process a substrate; and, a substrate transfer device constructed and arranged to transfer substrates to and from the first and second reactor. The second reactor may be provided with an illumination system constructed and arranged to irradiate ultraviolet radiation within a range from 100 to 500 nanometers onto a top surface of at least a substrate in the second reactor.

公开(公告)号：US20230167544A1

公开(公告)日：2023-06-01

申请号：US17990779

申请日：2022-11-21

Applicant: ASM IP Holding B.V.

Inventor： Ling Chi Hwang ,  Makoto Igarashi ,  Aurelie Kuroda

IPC: C23C16/04 ,  C23C16/34 ,  C23C16/513

CPC classification number: C23C16/045 ,  C23C16/347 ,  C23C16/513

Abstract: A method and system for forming a conformal silicon carbon nitride layer overlying a gap on a surface of a substrate are disclosed. Exemplary methods include forming conformal silicon carbon nitride material within the gap and treating the conformal silicon carbon nitride material to form treated silicon carbon nitride material. The deposition time is relatively short to mitigate flow of the conformal silicon carbon nitride material within the gap.

公开(公告)号：US11664222B2

公开(公告)日：2023-05-30

申请号：US17072525

申请日：2020-10-16

Applicant: ASM IP Holding B.V.

Inventor： Oreste Madia ,  Andrea Illiberi ,  Michael Eugene Givens ,  Tatiana Ivanova ,  Charles Dezelah ,  Varun Sharma

IPC: H01L21/02

CPC classification number: H01L21/0262 ,  H01L21/02565 ,  H01L21/02639

Abstract: Methods of forming indium gallium zinc oxide (IGZO) films by vapor deposition are provided. The IGZO films may, for example, serve as a channel layer in a transistor device. In some embodiments atomic layer deposition processes for depositing IGZO films comprise an IGZO deposition cycle comprising alternately and sequentially contacting a substrate in a reaction space with a vapor phase indium precursor, a vapor phase gallium precursor, a vapor phase zinc precursor and an oxygen reactant. In some embodiments the ALD deposition cycle additionally comprises contacting the substrate with an additional reactant comprising one or more of NH3, N2O, NO2 and H2O2.

公开(公告)号：US20230163028A1

公开(公告)日：2023-05-25

申请号：US18148687

申请日：2022-12-30

Applicant: ASM IP Holding B.V.

Inventor： Salvatore Luiso ,  YoungChol Byun ,  Holger Saare ,  Jaebeom Lee ,  Sukanya Datta ,  Jiyeon Kim ,  Petri Raisanen ,  Dong Li ,  Eric James Shero ,  Yasiel Cabrera ,  Arul Vigneswar Ravichandran ,  Eric Christopher Stevens ,  Paul Ma

IPC: H01L21/768 ,  C23C16/455 ,  C23C16/02

CPC classification number: H01L21/76879 ,  C23C16/0236 ,  C23C16/45553 ,  C23C16/06

Abstract: Molybdenum (Mo) metal-on-metal (MoM) deposition methods for providing true bottom-up fill in vias and/or other gap features in device structures. These device structures contain metal at the bottom surface and have dielectric sidewalls. The deposition process provides molybdenum growth only, in some cases, on the metal film/layer to provide a selective process that can be called a metal-on-metal (MoM) process. The Mo MoM deposition process described herein are not limited to thin films (e.g., films less than 50 Å) and can be used to deposit thicker films (e.g., greater than 50 Å in some cases and greater than 200 Å in other useful cases) on metal surfaces while no, or substantially no, deposition is found on dielectric surfaces.

公开(公告)号：US11649546B2

公开(公告)日：2023-05-16

申请号：US16828753

申请日：2020-03-24

Applicant: ASM IP Holding B.V.

Inventor： Antti Niskanen ,  Eva Tois ,  Hidemi Suemori ,  Suvi Haukka

IPC: C23C16/04 ,  C23C16/455 ,  C23C16/40 ,  C23C16/06

CPC classification number: C23C16/45525 ,  C23C16/04 ,  C23C16/06 ,  C23C16/40 ,  C23C16/45553

Abstract: A method for selectively depositing a metal oxide film is disclosed. In particular, the method comprises pulsing a metal or semi-metal precursor onto the substrate and pulsing an organic reactant onto the substrate. A reaction between the metal or semi-metal precursor and the organic reactant selectively forms a metal oxide film on either a dielectric layer or a metal layer.

公开(公告)号：US11646205B2

公开(公告)日：2023-05-09

申请号：US17071149

申请日：2020-10-15

Applicant: ASM IP Holding B.V.

Inventor： Rami Khazaka ,  Lucas Petersen Barbosa Lima ,  Giuseppe Alessio Verni ,  Qi Xie

IPC: H01L21/02 ,  H01L21/306 ,  H01L29/36 ,  C23C16/52 ,  H01L21/67

CPC classification number: H01L21/02636 ,  C23C16/52 ,  H01L21/30604 ,  H01L21/67063 ,  H01L29/36

Abstract: A method for selectively forming an n-type doped material on a surface of a substrate is disclosed. A system for performing the method and structures and devices formed using the method are also disclosed.

公开(公告)号：US11646184B2

公开(公告)日：2023-05-09

申请号：US17102419

申请日：2020-11-23

Applicant: ASM IP Holding B.V.

Inventor： HyungChul Moon ,  WonKi Jeong

IPC: H01J37/30 ,  H01J37/32 ,  C23C16/44

CPC classification number: H01J37/32834 ,  C23C16/4412 ,  H01J37/32568 ,  H01J37/32715 ,  H01J2237/332

Abstract: A substrate processing apparatus capable of minimizing the effect of a filling gas in a lower space on the processing of a substrate includes: a substrate supporting unit; a processing unit on the substrate supporting unit; and an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit, wherein a first gas in the reaction space and a second gas in a lower space below the substrate supporting unit meet each other outside the reaction space.

公开(公告)号：US20230139917A1

公开(公告)日：2023-05-04

申请号：US18050128

申请日：2022-10-27

Applicant: ASM IP Holding, B.V.

Inventor： Eva Tois ,  Viraj Madhiwala ,  Daniele Chiappe ,  Marko Tuominen ,  Shaoren Deng ,  Anirudhan Chandrasekaran ,  YongGuy Han ,  Michael Givens ,  Andrea Illiberi ,  Vincent Vandalon

IPC: C23C16/455

Abstract: Methods and vapor deposition assemblies of selectively depositing dielectric material on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, performing a thermal deposition subcycle performing a thermal deposition subcycle to selectively deposit a first material on the first surface, performing a plasma deposition subcycle to selectively deposit a second material on the first surface; wherein at least one of the first material and the second material comprises silicon and oxygen.

公开(公告)号：US20230137026A1

公开(公告)日：2023-05-04

申请号：US17973903

申请日：2022-10-26

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa ,  Koei Aida ,  Ryo Miyama ,  Yoshiyuki Kikuchi

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/683 ,  H01L21/02

Abstract: Methods and apparatuses for etching a perimeter of a substrate are disclosed. Exemplary methods and apparatuses can be used to deposit material and selectively etch material at the perimeter of the substrate within the same reaction chamber.

公开(公告)号：US20230129291A1

公开(公告)日：2023-04-27

申请号：US17970987

申请日：2022-10-21

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa ,  Yoshiyuki Kikuchi

IPC: H01L21/3065 ,  H01L21/67

Abstract: A method for etching a bevel edge of a substrate. The method includes providing a substrate with a bevel edge after a thin film has been deposited on a top surface of the substrate and rotating the substrate about its center axis. The method also includes, during the rotating, etching the bevel edge by directing flow of atmospheric plasma onto the bevel edge. The flow is parallel to the top surface of the substrate, such as orthogonal to a plane containing a region of the bevel edge being etched by the atmospheric plasma, which may be O2 atmospheric plasma. The etching is performed without loss of thickness of the thin film on the top surface at a radius spaced apart from an outer radius of the substrate. The substrate may be a silicon (Si) wafer, and the thin film may be a carbon film, amorphous carbon, SiC, SiO, or SiN.