Semiconductor device having a metal gate electrode
    168.
    发明授权
    Semiconductor device having a metal gate electrode 有权
    具有金属栅电极的半导体器件

    公开(公告)号:US07420254B2

    公开(公告)日:2008-09-02

    申请号:US11056517

    申请日:2005-02-11

    IPC分类号: H01L29/78

    摘要: A method for making a semiconductor device is described. That method comprises forming a dielectric layer on a substrate, and forming an impurity containing metal layer on the dielectric layer. A metal gate electrode is then formed from the impurity containing metal layer. Also described is a semiconductor device that comprises a metal gate electrode that is formed on a dielectric layer, which is formed on a substrate. The metal gate electrode includes a sufficient amount of an impurity to shift the workfunction of the metal gate electrode by at least about 0.1 eV.

    摘要翻译: 描述制造半导体器件的方法。 该方法包括在衬底上形成电介质层,并在电介质层上形成含杂质的金属层。 然后由含杂质的金属层形成金属栅电极。 还描述了一种半导体器件,其包括形成在形成在基板上的电介质层上的金属栅电极。 金属栅电极包括足够量的杂质以使金属栅电极的功函数转移至少约0.1eV。