公开(公告)号：US10256255B2

公开(公告)日：2019-04-09

申请号：US15239006

申请日：2016-08-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kouhei Toyotaka ,  Jun Koyama ,  Hiroyuki Miyake

IPC: G11C19/00 ,  H01L27/12 ,  G11C19/28 ,  G02F1/1334 ,  G02F1/1337 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/3233 ,  G09G3/3258 ,  G09G3/36 ,  H01L29/786 ,  G09G3/3266 ,  G09G3/3275

Abstract: A semiconductor device includes first and second transistors having the same conductivity type and a circuit. One of a source and a drain of the first transistor is electrically connected to that of the second transistor. First and third potentials are supplied to the circuit through respective wirings. A second potential and a first clock signal are supplied to the others of the sources and the drains of the first and second transistors, respectively. A second clock signal is supplied to the circuit. The third potential is higher than the second potential which is higher than the first potential. A fourth potential is equal to or higher than the third potential. The first clock signal alternates the second and fourth potentials and the second clock signal alternates the first and third potentials. The circuit controls electrical connections between gates of the first and second transistors and the wirings.

公开(公告)号：US10128247B2

公开(公告)日：2018-11-13

申请号：US15477144

申请日：2017-04-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato

IPC: H01L27/108 ,  H01L27/105 ,  G11C11/24 ,  H01L27/1156 ,  H01L27/12 ,  H01L49/02

Abstract: A semiconductor device including a non-volatile memory cell including a writing transistor which includes an oxide semiconductor, a reading transistor which includes a semiconductor material different from that of the writing transistor, and a capacitor is provided. Data is written or rewritten to the memory cell by turning on the writing transistor and supplying a potential to a node where a source electrode (or a drain electrode) of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected to each other, and then turning off the writing transistor so that the predetermined amount of charge is held in the node. Further, when a transistor whose threshold voltage is controlled and set to a positive voltage is used as the reading transistor, a reading potential is a positive potential.

公开(公告)号：US10121904B2

公开(公告)日：2018-11-06

申请号：US15678180

申请日：2017-08-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kiyoshi Kato ,  Jun Koyama

IPC: H04B1/06 ,  H04B7/00 ,  H04B1/28 ,  H04M1/00 ,  H01L29/786 ,  H01L27/06 ,  H01L27/12 ,  H04B1/40 ,  G06K19/077 ,  H01L29/10 ,  H01L23/66

Abstract: An object is to achieve low power consumption and a long lifetime of a semiconductor device having a wireless communication function. The object can be achieved in such a manner that a battery serving as a power supply source and a specific circuit are electrically connected to each other through a transistor in which a channel formation region is formed using an oxide semiconductor. The hydrogen concentration of the oxide semiconductor is lower than or equal to 5×1019 (atoms/cm3). Therefore, leakage current of the transistor can be reduced. As a result, power consumption of the semiconductor device in a standby state can be reduced. Further, the semiconductor device can have a long lifetime.

公开(公告)号：US10079251B2

公开(公告)日：2018-09-18

申请号：US15592599

申请日：2017-05-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L21/02603 ,  H01L27/0883 ,  H01L27/1251 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/045 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.

公开(公告)号：US20180190745A1

公开(公告)日：2018-07-05

申请号：US15894981

申请日：2018-02-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Makoto Udagawa ,  Masahiko Hayakawa ,  Jun Koyama ,  Mitsuaki Osame ,  Aya Anzai

IPC: H01L27/32 ,  H01L51/52 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L27/3262 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/3276 ,  H01L29/78675 ,  H01L29/78696 ,  H01L51/52

Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.

公开(公告)号：US09997514B2

公开(公告)日：2018-06-12

申请号：US15367412

申请日：2016-12-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama

IPC: H01L29/10 ,  H01L29/12 ,  H01L27/02 ,  G09G3/36 ,  G11C19/28 ,  H01L27/12 ,  H02H9/04 ,  G09G3/3283

CPC classification number: H01L27/0266 ,  G09G3/3283 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0426 ,  G09G2310/0267 ,  G09G2310/0275 ,  G09G2310/0286 ,  G09G2330/04 ,  G11C19/28 ,  H01L27/1225 ,  H02H9/044 ,  Y10T29/49117 ,  Y10T428/24364 ,  Y10T428/24372 ,  Y10T428/2438

Abstract: Provided are a driver circuit which suppresses damage of a semiconductor element due to ESD in a manufacturing process, a method of manufacturing the driver circuit. Further provided are a driver circuit provided with a protection circuit with low leakage current, and a method of manufacturing the driver circuit. By providing a protection circuit in a driver circuit to be electrically connected to a semiconductor element in the driver circuit, and by forming, at the same time, a transistor which serves as the semiconductor element in the driver circuit and a transistor included in the protection circuit in the driver circuit, damage of the semiconductor element due to ESD is suppressed in the process of manufacturing the driver circuit. Further, by using an oxide semiconductor film for the transistor included in the protection circuit in the driver circuit, leakage current in the protection circuit is reduced.

公开(公告)号：US09978757B2

公开(公告)日：2018-05-22

申请号：US14837177

申请日：2015-08-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato

IPC: H01L21/8239 ,  H01L21/8242 ,  H01L27/115 ,  H01L23/528 ,  H01L27/108 ,  H01L27/1156 ,  H01L27/11517 ,  H01L27/12 ,  H01L49/02 ,  H01L29/24 ,  H01L29/78 ,  H01L29/786 ,  H01L27/105 ,  H01L21/108 ,  G11C16/04 ,  H01L21/285 ,  H01L29/66

CPC classification number: H01L27/115 ,  G11C16/0416 ,  H01L21/28518 ,  H01L23/528 ,  H01L27/10805 ,  H01L27/10855 ,  H01L27/11517 ,  H01L27/1156 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1255 ,  H01L28/40 ,  H01L29/24 ,  H01L29/6659 ,  H01L29/78 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A first transistor including a channel formation region, a first gate insulating layer, a first gate electrode, and a first source electrode and a first drain electrode; a second transistor including an oxide semiconductor layer, a second source electrode and a second drain electrode, a second gate insulating layer, and a second gate electrode; and a capacitor including one of the second source electrode and the second drain electrode, the second gate insulating layer, and an electrode provided to overlap with one of the second source electrode and the second drain electrode over the second gate insulating layer are provided. The first gate electrode and one of the second source electrode and the second drain electrode are electrically connected to each other.

公开(公告)号：US09941310B2

公开(公告)日：2018-04-10

申请号：US15285661

申请日：2016-10-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama ,  Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto ,  Yuji Asano ,  Junichi Koezuka

IPC: H01L27/12 ,  H01L29/786 ,  H01L49/02 ,  H01L29/24

CPC classification number: H01L27/1255 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/127 ,  H01L28/20 ,  H01L29/24 ,  H01L29/78606 ,  H01L29/7869

Abstract: The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

公开(公告)号：US09941304B2

公开(公告)日：2018-04-10

申请号：US15224726

申请日：2016-08-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama ,  Shunpei Yamazaki

IPC: H01L29/80 ,  H01L21/8234 ,  H01L27/12 ,  G11C11/412 ,  H01L21/84 ,  H03K19/094 ,  H01L27/11517 ,  G06F1/20 ,  H01L27/06 ,  H03K19/0948 ,  G11C27/02

CPC classification number: H01L27/1225 ,  G06F1/206 ,  G11C11/412 ,  G11C27/024 ,  H01L21/84 ,  H01L27/0629 ,  H01L27/11517 ,  H01L27/1203 ,  H03K19/094 ,  H03K19/0948

Abstract: A memory device does not need a complex manufacturing process and whose power consumption can be suppressed, and a semiconductor device including the memory device. A solution is to provide a capacitor which holds data and a switching element which controls storing and releasing charge in the capacitor in a memory element. In the memory element, a phase-inversion element such as an inverter or a clocked inverter includes the phase of an input signal is inverted and the signal is output. For the switching element, a transistor including an oxide semiconductor in a channel formation region is used. In the case where application of a power supply voltage to the phase-inversion element is stopped, the data is stored in the capacitor, so that the data is held in the capacitor even when the application of the power supply voltage to the phase-inversion element is stopped.

公开(公告)号：US09886895B2

公开(公告)日：2018-02-06

申请号：US15242818

申请日：2016-08-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama

IPC: G09G3/32 ,  H01L51/52 ,  G09G3/3208 ,  H01L27/32 ,  H01L51/00 ,  C09K11/06 ,  G09G3/20 ,  G09G3/3241 ,  G09G3/3266 ,  G09G3/3283 ,  H05B33/14 ,  H01L27/12

CPC classification number: G09G3/3208 ,  C09K11/06 ,  C09K2211/1088 ,  C09K2211/185 ,  G09G3/2022 ,  G09G3/3241 ,  G09G3/3266 ,  G09G3/3283 ,  G09G2300/0417 ,  G09G2300/0426 ,  G09G2300/0809 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/027 ,  G09G2320/0247 ,  G09G2320/0266 ,  G09G2320/041 ,  H01L27/1222 ,  H01L27/1285 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3279 ,  H01L51/0096 ,  H01L51/5259 ,  H01L2251/301 ,  H05B33/14

Abstract: The present invention is to provide a light emitting device capable of obtaining a certain luminance without influence by the temperature change, and a driving method thereof. A current mirror circuit formed by using a transistor is provided for each pixel. The first transistor and the second transistor of the current mirror circuit are connected such that the drain currents thereof are maintained at proportional values regardless of the load resistance value. Thereby, a light emitting device capable of controlling the OLED driving current and the luminance of the OLED by controlling the drain current of the first transistor at a value corresponding to a video signal in a driving circuit, and supplying the drain current of the second transistor to the OLED, is provided.