公开(公告)号：US08957411B2

公开(公告)日：2015-02-17

申请号：US13950404

申请日：2013-07-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

IPC: H01L29/08 ,  H01L51/00 ,  H01L51/52 ,  H01L27/12 ,  H01L29/786 ,  H01L27/32

CPC classification number: H01L29/78696 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/127 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/247 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L51/52 ,  H01L2227/323

Abstract: An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.

Abstract translation: 目的在于提高发光装置的可靠性。 发光装置具有包括用于驱动电路的晶体管和包括用于一个衬底上的像素的晶体管的像素部分的驱动器电路部分。 用于驱动电路的晶体管和用于像素的晶体管是反向交错晶体管，每个晶体管包括与氧化物绝缘层的一部分接触的氧化物半导体层。 在像素部分中，在氧化物绝缘层上设置滤色器层和发光元件。 在用于驱动电路的晶体管中，在氧化物绝缘层上设置与栅电极层和氧化物半导体层重叠的导电层。 使用金属导电膜形成栅极电极层，源极电极层和漏极电极层。

公开(公告)号：US20150034937A1

公开(公告)日：2015-02-05

申请号：US14460426

申请日：2014-08-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hisao Ikeda ,  Hiroki Ohara ,  Makoto Hosoba ,  Junichiro Sakata ,  Shunichi Ito

IPC: H01L27/32 ,  H01L51/52

CPC classification number: H01L51/5253 ,  G09G3/3291 ,  G09G2300/0842 ,  G09G2310/0251 ,  G09G2320/043 ,  H01L27/3211 ,  H01L27/322 ,  H01L27/3246 ,  H01L27/3272 ,  H01L51/5012 ,  H01L51/5203 ,  H01L51/5206 ,  H01L51/5234 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/525 ,  H01L51/5262 ,  H01L51/5275 ,  H01L51/5284 ,  H01L2251/301 ,  H01L2251/5315 ,  H01L2251/5323 ,  H01L2251/5338 ,  H01L2251/5361

Abstract: There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. A light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided.

Abstract translation: 存在在其上设置的相对基板或防潮层之间的折射率差异，空气保持较大，光提取效率低的问题。 此外，存在容易产生由于防潮层而产生剥离或破裂的问题，导致发光元件的可靠性和寿命恶化。 发光元件包括依次堆叠的像素电极，电致发光层，透明电极，钝化膜，应力消除层和低折射率层。 应力消除层用于防止钝化膜的剥离。 低折射率层用于降低发射到空气中的电致发光层中产生的光的反射率。 因此，可以提供具有高可靠性和长寿命的发光元件和使用该发光元件的显示装置。

公开(公告)号：US08885115B2

公开(公告)日：2014-11-11

申请号：US14164713

申请日：2014-01-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama ,  Masashi Tsubuku

IPC: G02F1/136 ,  G02F1/1343 ,  H01L27/12

CPC classification number: H01L27/1225 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/133528 ,  G02F1/1337 ,  G02F1/1339 ,  G02F1/13394 ,  G02F1/134336 ,  G02F1/13439 ,  G02F1/13454 ,  G02F1/136204 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133302 ,  G02F2001/133357 ,  G02F2201/123 ,  G11C19/28 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/247 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

Abstract: An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer.

Abstract translation: 目的是提高半导体器件的可靠性。 提供了包括驱动电路部分和在相同基板上的显示部分（也称为像素部分）的半导体器件。 驱动器电路部分和显示部分包括其中半导体层包括氧化物半导体的薄膜晶体管; 第一布线 和第二布线。 薄膜晶体管各自包括源极电极层和漏极电极层。 在驱动电路部分的薄膜晶体管中，半导体层夹在栅电极层和导电层之间。 第一布线和第二布线在通过氧化物导电层设置在栅极绝缘膜中的开口中彼此电连接。

公开(公告)号：US08846460B2

公开(公告)日：2014-09-30

申请号：US14022392

申请日：2013-09-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

IPC: H01L21/00 ,  H01L21/04 ,  H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L21/02664 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is to provide a high reliable semiconductor device including a thin film transistor having stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (which is for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor film and reduce impurities such as moisture. Besides impurities such as moisture existing in the oxide semiconductor film, heat treatment causes reduction of impurities such as moisture existing in the gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor film and are in contact with the oxide semiconductor film.

Abstract translation: 目的是提供一种包括具有稳定电特性的薄膜晶体管的高可靠性半导体器件。 在包括使用氧化物半导体膜用于包括沟道形成区域的半导体层的薄膜晶体管的半导体器件的制造方法中，进行热处理（其用于脱水或脱氢），以提高纯度 氧化物半导体膜，并且减少诸如水分的杂质。 除了存在于氧化物半导体膜中的水分等杂质外，热处理会导致存在于栅极绝缘层中的杂质，氧化物半导体膜和氧化物半导体膜之间的氧化物半导体膜与膜之间的界面中的杂质的减少， 与氧化物半导体膜接触。

公开(公告)号：US08822991B2

公开(公告)日：2014-09-02

申请号：US13755317

申请日：2013-01-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro Sakata

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225

Abstract: It is an object to reduce characteristic variation among transistors and reduce contact resistance between an oxide semiconductor layer and a source electrode layer and a drain electrode layer, in a transistor where the oxide semiconductor layer is used as a channel layer. In a transistor where an oxide semiconductor is used as a channel layer, at least an amorphous structure is included in a region of an oxide semiconductor layer between a source electrode layer and a drain electrode layer, where a channel is to be formed, and a crystal structure is included in a region of the oxide semiconductor layer which is electrically connected to an external portion such as the source electrode layer and the drain electrode layer.

Abstract translation: 在氧化物半导体层用作沟道层的晶体管中，目的是减小晶体管之间的特性变化并降低氧化物半导体层与源电极层和漏电极层之间的接触电阻。 在其中使用氧化物半导体作为沟道层的晶体管中，至少一个非晶结构包括在要形成沟道的源电极层和漏电极层之间的氧化物半导体层的区域中，以及 晶体结构包括在电连接到诸如源极电极层和漏极电极层的外部的氧化物半导体层的区域中。

公开(公告)号：US08785929B2

公开(公告)日：2014-07-22

申请号：US13926276

申请日：2013-06-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro Sakata ,  Takashi Shimazu ,  Hiroki Ohara ,  Toshinari Sasaki ,  Shunpei Yamazaki

IPC: H01L29/786

CPC classification number: H01L29/16 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/78618 ,  H01L29/7869

Abstract: An object is to provide a semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. An oxide semiconductor layer including SiOx is used in a channel formation region, and in order to reduce contact resistance with source and drain electrode layers formed using a metal material with low electric resistance, source and drain regions are provided between the source and drain electrode layers and the oxide semiconductor layer including SiOx. The source and drain regions are formed using an oxide semiconductor layer which does not include SiOx or an oxynitiride film.

Abstract translation: 本发明的目的是提供一种包括具有氧化物半导体层并具有高电特性的薄膜晶体管的半导体器件。 在沟道形成区域中使用包含SiO x的氧化物半导体层，为了降低与使用具有低电阻的金属材料形成的源极和漏极电极层的接触电阻，源极和漏极电极层之间提供源极和漏极区域 和包含SiOx的氧化物半导体层。 源极和漏极区域使用不包括SiO x或氧氮化物膜的氧化物半导体层形成。

公开(公告)号：US08643011B2

公开(公告)日：2014-02-04

申请号：US13677504

申请日：2012-11-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Junichiro Sakata ,  Takuya Hirohashi ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga

IPC: H01L29/15

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/28079 ,  H01L21/28158 ,  H01L29/04 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78693

Abstract: It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).

Abstract translation: 本发明的目的是提供一种适用于半导体器件的氧化物半导体。 或者，另一目的是提供一种使用氧化物半导体的半导体器件。 提供了在晶体管的沟道形成区域中包括In-Ga-Zn-O系氧化物半导体层的半导体器件。 在半导体器件中，In-Ga-Zn-O系氧化物半导体层具有以InGaO 3（ZnO）m（m = 1）表示的晶粒包含在由InGaO 3（ZnO）m（ m> 0）。

公开(公告)号：US20130228782A1

公开(公告)日：2013-09-05

申请号：US13870027

申请日：2013-04-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Kosei Noda ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Hotaka Maruyama

IPC: H01L29/786

CPC classification number: H01L29/78606 ,  H01L23/5329 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.

公开(公告)号：US20130175526A1

公开(公告)日：2013-07-11

申请号：US13784908

申请日：2013-03-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Miyuki HOSOBA ,  Junichiro Sakata ,  Hideaki Kuwabara

IPC: H01L29/786

CPC classification number: H01L29/78606 ,  G02F1/1339 ,  G02F1/134336 ,  G02F1/1345 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F1/167 ,  G02F2001/13606 ,  G02F2201/123 ,  G09G3/344 ,  G09G3/3677 ,  G09G2300/0426 ,  G09G2310/0286 ,  G09G2310/08 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/3262 ,  H01L29/45 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is to provide a semiconductor device having a structure in which parasitic capacitance between wirings can be efficiently reduced. In a bottom gate thin film transistor using an oxide semiconductor layer, an oxide insulating layer used as a channel protection layer is formed above and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer, and at the same time an oxide insulating layer covering a peripheral portion (including a side surface) of the stacked oxide semiconductor layer is formed. Further, a source electrode layer and a drain electrode layer are formed in a manner such that they do not overlap with the channel protection layer. Thus, a structure in which an insulating layer over the source electrode layer and the drain electrode layer is in contact with the oxide semiconductor layer is provided.

公开(公告)号：US20130075723A1

公开(公告)日：2013-03-28

申请号：US13671638

申请日：2012-11-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/45 ,  H01L29/78606 ,  H01L29/78696

Abstract: In a channel protected thin film transistor in which a channel formation region is formed using an oxide semiconductor, an oxide semiconductor layer which is dehydrated or dehydrogenated by a heat treatment is used as an active layer, a crystal region including nanocrystals is included in a superficial portion in the channel formation region, and the rest portion is amorphous or is formed of a mixture of amorphousness/non-crystals and microcrystals, where an amorphous region is dotted with microcrystals. By using an oxide semiconductor layer having such a structure, a change to an n-type caused by entry of moisture or elimination of oxygen to or from the superficial portion and generation of a parasitic channel can be prevented and a contact resistance with a source and drain electrodes can be reduced.

Abstract translation: 在使用氧化物半导体形成沟道形成区域的沟道保护薄膜晶体管中，使用通过热处理脱水或脱氢的氧化物半导体层作为有源层，包括纳米晶体的晶体区域包含在表面 并且其余部分是无定形的或由非晶/非晶体和微晶体的混合物形成，其中非晶区域用微晶点缀。 通过使用具有这种结构的氧化物半导体层，可以防止由于进入水分或从表面部分去除氧气或从表面部分排出而引起的n型变化和产生寄生通道，并且与源极接触电阻 可以减少漏电极。