公开(公告)号：US10176748B2

公开(公告)日：2019-01-08

申请号：US15416317

申请日：2017-01-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Isamu Shigemori

IPC: G09G3/34 ,  G09G3/3208 ,  G06F3/0354 ,  G06F3/0488 ,  G09G3/3275 ,  G06F3/0484 ,  G06F3/0481 ,  G09G3/22 ,  G09G3/36 ,  G06F1/32 ,  G06F1/16 ,  G09G3/20 ,  G09G3/30 ,  G06F3/03

Abstract: A novel information processing device that is highly convenient is provided. The information processing device includes a selection circuit having a function of supplying image data to a reflective display element, a light-emitting element, or both of them on the basis of input position coordinate data, sensing data about the illuminance of the usage environment, and the image data. An icon with high selection frequency is displayed by both the reflective display element and the light-emitting element on the basis of icon coordinate data and the input position coordinate data, so that the icon can be displayed brightly with improved visibility.

公开(公告)号：US10153346B2

公开(公告)日：2018-12-11

申请号：US15079156

申请日：2016-03-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Yusuke Nonaka ,  Hiroshi Kanemura

IPC: H01L29/24 ,  H01L29/04 ,  H01L29/786 ,  H01L21/02 ,  H01L27/12

Abstract: To manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor. An oxide semiconductor film is deposited by a sputtering method with the use of a polycrystalline sputtering target. In that case, partial pressure of water in a deposition chamber before or in the deposition is set to be lower than or equal to 10−3 Pa, preferably lower than or equal to 10−4 Pa, more preferably lower than or equal to 10−5 Pa. Thus, a dense oxide semiconductor film is obtained. The density of the oxide semiconductor film is higher than 6.0 g/cm3 and lower than 6.375 g/cm3.

公开(公告)号：US09997638B2

公开(公告)日：2018-06-12

申请号：US15598683

申请日：2017-05-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiromichi Godo ,  Kengo Akimoto ,  Shunpei Yamazaki

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24 ,  H01L21/02

CPC classification number: H01L29/78693 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is to reduce to reduce variation in threshold voltage to stabilize electric characteristics of thin film transistors each using an oxide semiconductor layer. An object is to reduce an off current. The thin film transistor using an oxide semiconductor layer is formed by stacking an oxide semiconductor layer containing insulating oxide over the oxide semiconductor layer so that the oxide semiconductor layer and source and drain electrode layers are in contact with each other with the oxide semiconductor layer containing insulating oxide interposed therebetween; whereby, variation in threshold voltage of the thin film transistors can be reduced and thus the electric characteristics can be stabilized. Further, an off current can be reduced.

公开(公告)号：US09947797B2

公开(公告)日：2018-04-17

申请号：US14496368

申请日：2014-09-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto

IPC: H01L29/49 ,  H01L29/786 ,  H01L29/24 ,  H01L29/51 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/24 ,  H01L29/247 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/78609 ,  H01L29/78693 ,  H01L29/78696

Abstract: Homogeneity and stability of electric characteristics of a thin film transistor included in a circuit are critical for the performance of a display device including said circuit. An object of the invention is to provide an oxide semiconductor film with low hydrogen content and which is used in an inverted staggered thin film transistor having well defined electric characteristics. In order to achieve the object, a gate insulating film, an oxide semiconductor layer, and a channel protective film are successively formed with a sputtering method without being exposed to air. The oxide semiconductor layer is formed so as to limit hydrogen contamination, in an atmosphere including a proportion of oxygen. In addition, layers provided over and under a channel formation region of the oxide semiconductor layer are formed using compounds of silicon, oxygen and/or nitrogen.

公开(公告)号：US09905579B2

公开(公告)日：2018-02-27

申请号：US15451540

申请日：2017-03-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Hiroyuki Miyake ,  Kengo Akimoto ,  Masami Jintyou ,  Takahiro Iguchi

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/04 ,  H01L29/24 ,  H01L27/32

CPC classification number: H01L27/1229 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/24 ,  H01L29/786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device with a reduced layout area of transistors is provided. The semiconductor device includes a first transistor including a first oxide semiconductor film and a second transistor including a second oxide semiconductor film over a substrate. When the oxide semiconductor films are subjected to electron diffraction, the ratio of the integrated intensity of luminance of a diffraction spot derived from c-axis alignment to the integrated intensity of luminance of a diffraction spot derived from alignment in any direction in the first oxide semiconductor film is higher than that in the second oxide semiconductor film. In addition, part of the first transistor is located between the second transistor and the substrate.

公开(公告)号：US09893201B2

公开(公告)日：2018-02-13

申请号：US15198119

申请日：2016-06-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro Takahashi ,  Kengo Akimoto ,  Shunpei Yamazaki

IPC: H01L29/66 ,  H01L29/786 ,  C01G15/00 ,  G02F1/1368 ,  G02F1/1343 ,  G02F1/1362 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L27/32

CPC classification number: H01L29/7869 ,  C01G15/006 ,  C01P2006/40 ,  G02F1/134309 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2201/123 ,  H01L21/02565 ,  H01L21/02609 ,  H01L27/1225 ,  H01L27/1285 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696

Abstract: To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+δGa1−δO3(ZnO)m (0

公开(公告)号：US09773920B2

公开(公告)日：2017-09-26

申请号：US14947109

申请日：2015-11-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto

IPC: H01L29/786 ,  H01L29/24 ,  H01L21/02 ,  H01L29/66 ,  H01L29/49

Abstract: An object is to provide favorable interface characteristics of a thin film transistor including an oxide semiconductor layer without mixing of an impurity such as moisture. Another object is to provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability, and a method by which a semiconductor device can be manufactured with high productivity. A main point is to perform oxygen radical treatment on a surface of a gate insulating layer. Accordingly, there is a peak of the oxygen concentration at an interface between the gate insulating layer and a semiconductor layer, and the oxygen concentration of the gate insulating layer has a concentration gradient. The oxygen concentration is increased toward the interface between the gate insulating layer and the semiconductor layer.

公开(公告)号：US09722054B2

公开(公告)日：2017-08-01

申请号：US14043925

申请日：2013-10-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Toshinari Sasaki ,  Hideaki Kuwabara

IPC: H01L21/00 ,  H01L21/16 ,  H01L29/66 ,  H01L21/02 ,  H01L29/45 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/786 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized.

公开(公告)号：US09343584B2

公开(公告)日：2016-05-17

申请号：US14819772

申请日：2015-08-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yusuke Nonaka ,  Takayuki Inoue ,  Masashi Tsubuku ,  Kengo Akimoto ,  Akiharu Miyanaga

IPC: H01L27/01 ,  H01L27/12 ,  H01L29/12 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/0392 ,  H01L29/786 ,  H01L29/24 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/04 ,  H01L29/24 ,  H01L29/78603

Abstract: An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.

公开(公告)号：US09224839B2

公开(公告)日：2015-12-29

申请号：US14459548

申请日：2014-08-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Masashi Tsubuku

IPC: H01L21/16 ,  H01L29/66 ,  H01L27/12 ,  H01L29/786 ,  H01L21/324 ,  H01L21/447 ,  H01L21/02

CPC classification number: H01L29/66742 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/324 ,  H01L21/447 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/7869

Abstract: To provide a method for manufacturing a thin film transistor in which contact resistance between an oxide semiconductor layer and source and drain electrode layers is small, the surfaces of the source and drain electrode layers are subjected to sputtering treatment with plasma and an oxide semiconductor layer containing In, Ga, and Zn is formed successively over the source and drain electrode layers without exposure of the source and drain electrode layers to air.

Abstract translation: 为了提供一种制造薄膜晶体管的方法，其中氧化物半导体层和源极和漏极电极层之间的接触电阻很小，源极和漏极电极层的表面用等离子体和含有氧化物半导体层的氧化物半导体层进行溅射处理 In，Ga和Zn依次形成在源极和漏极电极层上，而不会将源极和漏极电极层暴露于空气。