公开(公告)号：US07407827B2

公开(公告)日：2008-08-05

申请号：US11210006

申请日：2005-08-23

Applicant: Tetsuo Fujii ,  Masahito Imai

Inventor： Tetsuo Fujii ,  Masahito Imai

IPC: H01L21/00

CPC classification number: B81B7/0006 ,  B81B2201/0235 ,  C07C303/32 ,  C07C303/44 ,  G01C19/56 ,  G01C19/5656 ,  G01C19/5719 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0817 ,  G01P2015/0828 ,  Y10T29/49002 ,  Y10T29/49004 ,  C07C309/17

Abstract: A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.

Abstract translation: 具有S / N比提高的新结构的半导体机械传感器。 在硅衬底1的中心部分，形成包括梁结构的凹部2。 在梁的尖端处形成重物，并且在凹部2的底面中的重物的底面中，重物形成为电极5。 在重量部分4和电极5之间施加交流电力，从而产生静电，并且重量被静电激励。 在与重量的激励方向垂直的轴向方向上，电极6设置为面对重物的一个表面和面向其的基板的壁表面。 对面对电极之间的电容变化进行电检测，因此检测到以相同方向作用的物理力的变化。

公开(公告)号：US20080135932A1

公开(公告)日：2008-06-12

申请号：US11987676

申请日：2007-12-04

Applicant: Yoshihiko Ozeki ,  Kenji Kouno ,  Tetsuo Fujii

Inventor： Yoshihiko Ozeki ,  Kenji Kouno ,  Tetsuo Fujii

IPC: H01L27/088 ,  H01L21/762

CPC classification number: H01L27/0694 ,  H01L21/8221 ,  H01L23/481 ,  H01L25/074 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device having plural active and passive elements on one semiconductor substrate is manufactured in the following cost effective manner even when the active and passive elements include double sided electrode elements. When the semiconductor substrate is divided into plural field areas, an insulation separation trench that penetrates the semiconductor substrate surrounds each of the field areas, and each of the either of the plural active elements or the plural passive elements. Further, each of the plural elements has a pair of power electrodes for power supply respectively disposed on each of both sides of the semiconductor substrate to serve as the double sided electrode elements.

Abstract translation: 即使有源和无源元件包括双面电极元件，在一个半导体衬底上具有多个有源和无源元件的半导体器件以下列成本有效的方式被制造。 当半导体衬底被分成多个场区域时，穿透半导体衬底的绝缘分离沟槽包围每个场区域，以及多个有源元件或多个无源元件中的任一个。 此外，多个元件中的每一个都具有一对用于电源的功率电极，分别设置在半导体衬底的两侧中以用作双面电极元件。

公开(公告)号：US20070121690A1

公开(公告)日：2007-05-31

申请号：US10581940

申请日：2003-12-09

Applicant: Tetsuo Fujii ,  Yan Gao ,  Evelyn Hu ,  Shuji Nakamura

Inventor： Tetsuo Fujii ,  Yan Gao ,  Evelyn Hu ,  Shuji Nakamura

IPC: H01S5/00

CPC classification number: H01L33/22 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/60 ,  H01L2224/16225

Abstract: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) (42) of the LED and a surface of the N-face (42) is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face (42) is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

Abstract translation: 一种氮化镓（GaN）基发光二极管（LED），其中通过LED的氮面（N面）（42）提取光，并且将N面（42）的表面粗糙化成一个或多个 六角形锥体。 粗糙表面减少LED内部重复发生的光反射，从而从LED中提取更多的光。 通过各向异性蚀刻使N面（42）的表面粗糙化，其可以包括干蚀刻或光增强化学（PEC）蚀刻。

公开(公告)号：US20070111476A1

公开(公告)日：2007-05-17

申请号：US11591496

申请日：2006-11-02

Applicant: Kazuhiko Sugiura ,  Kenichi Yokoyama ,  Muneo Tamura ,  Tetsuo Fujii ,  Makoto Asai

Inventor： Kazuhiko Sugiura ,  Kenichi Yokoyama ,  Muneo Tamura ,  Tetsuo Fujii ,  Makoto Asai

IPC: H01L21/00

CPC classification number: H01L21/78 ,  B23K26/16 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/6835 ,  H01L21/6836 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2924/3025

Abstract: A separating device for separating a semiconductor substrate includes: a cutting element for cutting the semiconductor substrate into a plurality of chips along with a cutting line on the semiconductor substrate; an adsorbing element for adsorbing a dust on a surface of the semiconductor substrate by using electrostatic force; and a static electricity generating element for generating static electricity and for controlling the static electricity in order to remove the dust from the adsorbing element.

Abstract translation: 用于分离半导体衬底的分离装置包括：用于将半导体衬底与半导体衬底上的切割线一起切割成多个芯片的切割元件; 用于通过使用静电力吸附在所述半导体衬底的表面上的灰尘的吸附元件; 以及用于产生静电并用于控制静电以便从吸附元件去除灰尘的静电发生元件。

公开(公告)号：US20060220183A1

公开(公告)日：2006-10-05

申请号：US11392739

申请日：2006-03-30

Applicant: Makoto Asai ,  Muneo Tamura ,  Kazuhiko Sugiura ,  Tetsuo Fujii

Inventor： Makoto Asai ,  Muneo Tamura ,  Kazuhiko Sugiura ,  Tetsuo Fujii

IPC: H01L29/06 ,  H01L21/00

CPC classification number: H01L21/67132 ,  H01L21/78

Abstract: A semiconductor wafer includes: a first layer having a first refraction index; a second layer having a second refraction index, which is different from the first refraction index; a plurality of semiconductor elements; and a layer removal region. The semiconductor elements are capable of being separated each other by irradiating a laser beam on the first layer along with a cutting line. The laser beam irradiation provides a modified region in the first layer so that the semiconductor elements are capable of being separated by a crack generated in the modified region. The layer removal region is provided such that the second layer in the layer removal region is removed from the wafer.

Abstract translation: 半导体晶片包括：具有第一折射率的第一层; 具有与第一折射率不同的第二折射率的第二层; 多个半导体元件; 和层去除区域。 半导体元件能够通过与切割线一起照射第一层上的激光束而彼此分离。 激光束照射在第一层中提供改性区域，使得半导体元件能够被改性区域中产生的裂纹分离。 提供了去除层，使得去除层中的第二层从晶片上去除。

公开(公告)号：US06463803B2

公开(公告)日：2002-10-15

申请号：US09749693

申请日：2000-12-28

Applicant: Tetsuo Fujii ,  Masahito Imai

Inventor： Tetsuo Fujii ,  Masahito Imai

IPC: G01P15125

CPC classification number: B81B7/0006 ,  B81B2201/0235 ,  C07C303/32 ,  C07C303/44 ,  G01C19/56 ,  G01C19/5656 ,  G01C19/5719 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0817 ,  G01P2015/0828 ,  Y10T29/49002 ,  Y10T29/49004 ,  C07C309/17

Abstract: A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.

公开(公告)号：US06255741B1

公开(公告)日：2001-07-03

申请号：US09270745

申请日：1999-03-16

Applicant: Shinji Yoshihara ,  Sumitomo Inomata ,  Kinya Atsumi ,  Minekazu Sakai ,  Yasuki Shimoyama ,  Tetsuo Fujii

Inventor： Shinji Yoshihara ,  Sumitomo Inomata ,  Kinya Atsumi ,  Minekazu Sakai ,  Yasuki Shimoyama ,  Tetsuo Fujii

IPC: G01P100

CPC classification number: B81B7/0058 ,  B81C1/00896 ,  G01P1/023 ,  G01P15/0802 ,  H01L23/3164 ,  H01L23/564 ,  H01L24/05 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/32245 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/16195 ,  H01L2924/16235 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A heat resisting resin sheet is bonded to a semiconductor chip as a protective cap for protecting a beam structure provided on the semiconductor chip, through a heat resisting adhesive. The heat resisting resin sheet is composed of a polyimide base member and the heat resisting adhesive is composed of silicone adhesive. The heat resisting resin sheet is not deformed during a manufacturing process of the semiconductor chip. In addition, grinding water does not invade into the semiconductor chip during dicing-cut.

Abstract translation: 耐热性树脂片通过耐热粘合剂与半导体芯片接合，作为用于保护设置在半导体芯片上的梁结构的保护帽。 耐热性树脂片由聚酰亚胺基材构成，耐热粘合剂由硅酮粘合剂构成。 耐热性树脂片在半导体芯片的制造工序中不变形。 此外，切割时切削水不会侵入半导体芯片。

公开(公告)号：US06227050B1

公开(公告)日：2001-05-08

申请号：US09181615

申请日：1998-10-28

Applicant: Tetsuo Fujii ,  Masahito Imai

Inventor： Tetsuo Fujii ,  Masahito Imai

IPC: G01P15125

CPC classification number: B81B7/0006 ,  B81B2201/0235 ,  C07C303/32 ,  C07C303/44 ,  G01C19/56 ,  G01C19/5656 ,  G01C19/5719 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0817 ,  G01P2015/0828 ,  Y10T29/49002 ,  Y10T29/49004 ,  C07C309/17

Abstract: A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.

Abstract translation: 具有S / N比提高的新结构的半导体机械传感器。 在硅衬底1的中心部分，形成包括梁结构的凹部2。 在梁的尖端处形成重物，并且在凹部2的底面中的重物的底面中，重物形成为电极5。 在重量部分4和电极5之间施加交流电力，从而产生静电，并且重量被静电激励。 在与重量的激励方向垂直的轴向方向上，电极6设置为面对重物的一个表面和面向其的基板的壁表面。 对面对电极之间的电容变化进行电检测，因此检测到以相同方向作用的物理力的变化。

公开(公告)号：US5747846A

公开(公告)日：1998-05-05

申请号：US346287

申请日：1994-11-23

Applicant: Makio Iida ,  Tetsuo Fujii ,  Yoshihiko Isobe

Inventor： Makio Iida ,  Tetsuo Fujii ,  Yoshihiko Isobe

IPC: H01L21/8247 ,  H01L27/105 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  H01L27/10

CPC classification number: H01L27/11526 ,  H01L27/105 ,  H01L27/11531

Abstract: A non-volatile memory cell having a structure having improved integration and simplified electrode wiring structure. The programmable non-volatile memory cell of the present invention adopts a mono-layer gate scheme to simplify the electrode wiring structure and to eliminate a current leakage problem of an insulating film between electrodes. A side and bottom of a semiconductor region, which is disposed directly below a capacity electrode section with a gate insulating film interposed therebetween that compose a control electrode, are isolated from another semiconductor region and semiconductor substrate by insulating films. Thus, a high programming control voltage which is not limited by a junction yield voltage between the semiconductor regions and semiconductor substrate may be applied. Due to that, an area of the capacity electrode section of a floating electrode may be considerably reduced.

Abstract translation: 具有改进的集成和简化的电极布线结构的结构的非易失性存储单元。 本发明的可编程非易失性存储单元采用单层栅极方案来简化电极布线结构，并消除电极之间绝缘膜的漏电问题。 通过绝缘膜将另一个半导体区域的半导体区域和半导体区域的半导体区域和半导体衬底的另一个半导体区域和半导体衬底隔离，其中，半导体区域的一侧和底部直接配置在其间具有构成控制电极的栅极绝缘膜 因此，可以应用不受半导体区域和半导体衬底之间的接合屈服电压限制的高编程控制电压。 因此，浮动电极的电容电极部分的面积可以大大减小。

公开(公告)号：US5627399A

公开(公告)日：1997-05-06

申请号：US565052

申请日：1995-11-28

Applicant: Tetsuo Fujii

Inventor： Tetsuo Fujii

IPC: H01L23/552 ,  H01L27/088 ,  H01L27/12 ,  H01L29/00 ,  H01L27/01 ,  H01L31/0392

CPC classification number: H01L27/12 ,  H01L23/552 ,  H01L27/088 ,  H01L2924/0002 ,  Y10S148/012 ,  Y10S148/05 ,  Y10S148/135

Abstract: A semiconductor device of the type having a semiconductor substrate; a semiconductor layer disposed on the semiconductor substrate; a first element formed in a region of the semiconductor layer and having a perimeter including a bottom; a second element formed in another region of the semiconductor layer; an insulating layer surrounding the perimeter of the first element, for electrically insulating and separating the first element from the second element and the semiconductor substrate; an electrical shield layer disposed between the insulating layer and the first element, surrounding the perimeter of the first element, and adapted to a reference electric potential applied thereto, for shielding the first element from an electrical fluctuation of the semiconductor substrate caused by the second element; and an electrode for applying the reference electric potential to the electrical shield layer.

Abstract translation: 一种具有半导体衬底的类型的半导体器件; 设置在所述半导体衬底上的半导体层; 形成在所述半导体层的区域中并且具有包括底部的周边的第一元件; 形成在所述半导体层的另一区域中的第二元件; 围绕所述第一元件的周边的绝缘层，用于将所述第一元件与所述第二元件和所述半导体基板电绝缘和分离; 电屏蔽层，设置在所述绝缘层和所述第一元件之间，围绕所述第一元件的周边，并且适于施加到其上的参考电位，用于屏蔽所述第一元件免受所述第二元件引起的所述半导体衬底的电波动 ; 以及用于将参考电位施加到电气屏蔽层的电极。