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171.发明授权公开(公告)号：US09905297B2
公开(公告)日：2018-02-27
申请号：US14697182
申请日：2015-04-27
Applicant: Rambus Inc.
Inventor： Scott C. Best
CPC classification number: G11C14/0018 , G06F12/0246 , G06F12/0638 , G06F13/1694
Abstract: A method of controlling a memory device includes receiving an address value that indicates a range of addresses within the memory device, each address within the range of addresses corresponding to storage locations within each of two distinct storage dice within the memory device. The address value is stored within a programmable register within the memory device.
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公开(公告)号：US09710011B2
公开(公告)日：2017-07-18
申请号：US14751312
申请日：2015-06-26
Applicant: RAMBUS INC.
Inventor： Scott C. Best , Abhijit M. Abhyankar , Kun-Yung Chang , Frank Lambrecht
CPC classification number: G06F1/08 , G06F1/12 , G11C29/02 , G11C29/022 , G11C29/028 , G11C29/50012 , H04L7/0004 , H04L7/0008 , H04L7/0033 , H04L7/0091 , H04L7/033 , H04L7/10 , H04L25/14
Abstract: A memory controller having a data receiver to sample data at a sample timing using a strobe signal, wherein the data and the strobe signal are sent by a memory device in connection with a read operation initiated by the memory controller, and a strobe receiver to receive the strobe signal, wherein a phase of the strobe signal has a drift relative to a reference by an amount. The memory controller further having a monitoring circuit to monitor the strobe signal and determine the amount of the drift, and an adjustment circuit to update the sample timing of the data receiver based on the amount of drift determined by the monitoring signal.
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173.发明授权公开(公告)号：US09704576B2
公开(公告)日：2017-07-11
申请号：US14621171
申请日：2015-02-12
Applicant: Rambus Inc.
Inventor： Scott C. Best , Brent Steven Haukness
CPC classification number: G11C15/046 , G11C13/0002
Abstract: A ternary content addressable memory (TCAM) cell may include a first resistive memory element, a second resistive memory element, a third resistive memory element, and a first switching element. The first resistive memory element may be disposed between a true data bit line node and a common node. The second resistive memory element may be disposed between a complement data bit line node and the common node. The third resistive element may be coupled to the common node and a word line node. The first switching element may have a control terminal coupled to the common node.
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公开(公告)号：US09565039B2
公开(公告)日：2017-02-07
申请号：US14573773
申请日：2014-12-17
Applicant: Rambus Inc.
Inventor： Scott C. Best , John W. Poulton
CPC classification number: G11C5/144 , G06F11/0727 , G06F11/076 , G06F11/0793 , G06F13/4072 , G11C5/145 , H04L1/203 , H04L25/0264 , H04L25/08
Abstract: In a data transmission system, one or more signal supply voltages for generating the signaling voltage of a signal to be transmitted are generated in a first circuit and forwarded from the first circuit to a second circuit. The second circuit may use the forwarded signal supply voltages to generate another signal to be transmitted back from the second circuit to the first circuit, thereby obviating the need to generate signal supply voltages separately in the second circuit. The first circuit may also adjust the signal supply voltages based on the signal transmitted back from the second circuit to the first circuit. The data transmission system may employ a single-ended signaling system in which the signaling voltage is referenced to a reference voltage that is a power supply voltage such as ground, shared by the first circuit and the second circuit.
Abstract translation: 在数据传输系统中，在第一电路中生成用于产生要发送的信号的信令电压的一个或多个信号电源电压，并从第一电路转发到第二电路。 第二电路可以使用转发的信号电源电压来产生要从第二电路传输回第一电路的另一个信号，从而避免在第二电路中单独产生信号电源电压的需要。 第一电路还可以基于从第二电路传输回第一电路的信号来调整信号电源电压。 数据传输系统可以使用单端信令系统，其中信令电压参考作为由第一电路和第二电路共享的诸如地的电源电压的参考电压。
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公开(公告)号：US20170017594A1
公开(公告)日：2017-01-19
申请号：US15277949
申请日：2016-09-27
Applicant: Rambus Inc.
Inventor： Scott C. Best
IPC: G06F13/362 , H01L27/02 , G11C16/10 , G11C14/00 , G11C11/4096 , G11C16/26 , H01L25/065 , G06F13/40
CPC classification number: G06F13/362 , G06F13/4068 , G11C11/408 , G11C11/409 , G11C11/4096 , G11C14/0018 , G11C16/10 , G11C16/26 , H01L23/48 , H01L23/481 , H01L23/50 , H01L23/60 , H01L24/09 , H01L25/0652 , H01L25/0657 , H01L27/0248 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/08145 , H01L2224/16145 , H01L2224/16225 , H01L2225/06503 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2225/06544 , H01L2225/06555 , H01L2225/06562 , H01L2924/00014 , H01L2924/0002 , H01L2924/14 , H01L2924/1436 , H01L2924/15311 , H01L2224/05552 , H01L2924/00
Abstract: This application is directed to a stacked semiconductor device assembly including first and second integrated circuit (IC) devices. Each of the first and second IC devices further includes a master interface, a channel master circuit configured to receive read/write data using the master interface, a slave interface, a channel slave circuit configured to receive read/write data using the slave interface, a memory core coupled to the channel salve circuit, and a modal pad. The first and second IC devices are configured such that in response to at least a modal selection signal received at one of the modal pads of the first and second IC devices, one of the first and second IC devices is configured to receive read/write data using its respective charnel master circuit, and the other of the first and second IC devices is configured to receive read/write data using its respective channel slave circuit.
Abstract translation: 本申请涉及包括第一和第二集成电路（IC）装置的堆叠半导体器件组件。 第一和第二IC器件中的每一个还包括主接口，被配置为使用主接口接收读/写数据的通道主电路，从接口，被配置为使用从接口接收读/写数据的通道从电路， 耦合到通道补偿电路的存储器芯，以及模态焊盘。 第一和第二IC器件被配置为使得响应于至少在第一和第二IC器件的模态焊盘之一处接收的模态选择信号，第一和第二IC器件之一被配置为接收读/写数据 使用其相应的通道主电路，并且第一和第二IC器件中的另一个被配置为使用其相应的通道从电路来接收读/写数据。
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Patent Agency Ranking
公开(公告)号：US09490002B2
公开(公告)日：2016-11-08
申请号：US14801558
申请日：2015-07-16
Applicant: Rambus Inc.
Inventor： Frederick A. Ware , Brent S. Haukness , Scott C. Best , Gary B. Bronner
IPC: G11C7/00 , G11C11/406
CPC classification number: G11C11/40611 , G11C2211/4061
Abstract: N out of every M number of refresh commands are ignored (filtered out) by a buffer chip on a memory module. N and M are programmable. The buffer receives refresh commands (e.g., auto-refresh commands) from the command-address channel, but does not issue a proportion of these commands to the DRAMs on the module. This reduces the power consumed by refresh operations. The buffer may replace some auto-refresh (REF) commands with activate (ACT) and precharge (PRE) commands directed to specific rows. These rows may have known ‘weak’ cells that require refreshing more often than a majority of the other rows on the module (or component). By ignoring some auto-refresh commands, and directing some others to specific rows that have ‘weak’ cells, the power consumed by refresh operations can be reduced.
Abstract translation: 每个M个刷新命令中的N个被存储器模块上的缓冲器芯片忽略（滤除掉）。 N和M是可编程的。 缓冲器从命令地址信道接收刷新命令（例如，自动刷新命令），但不向模块上的DRAM发出这些命令的一部分。 这减少了刷新操作所消耗的功耗。 缓冲区可以用针对特定行的激活（ACT）和预充电（PRE）命令替换一些自动刷新（REF）命令。 这些行可能具有比模块（或组件）上的大多数其他行更频繁刷新的已知“弱”单元格。 通过忽略一些自动刷新命令，并将一些其他命令指向具有“弱”单元格的特定行，可以减少刷新操作消耗的功率。
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公开(公告)号：US20160189764A1
公开(公告)日：2016-06-30
申请号：US14869294
申请日：2015-09-29
Applicant: RAMBUS INC.
Inventor： Frederick A. Ware , Suresh Rajan , Scott C. Best
IPC: G11C11/408
CPC classification number: G11C11/4082 , G06F12/06 , G06F13/1673 , G06F13/1684 , G11C5/04 , G11C7/1051 , G11C7/1078 , G11C7/22 , G11C11/4076 , G11C11/4093
Abstract: The embodiments described herein describe technologies for using the memory modules in different modes of operation, such as in a standard multi-drop mode or as in a dynamic point-to-point (DPP) mode (also referred to herein as an enhanced mode). The memory modules can also be inserted in the sockets of the memory system in different configurations.
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公开(公告)号：US20150293557A1
公开(公告)日：2015-10-15
申请号：US14751312
申请日：2015-06-26
Applicant: RAMBUS INC.
Inventor： Scott C. Best , Abhijit M. Abhyankar , Kun-Yung Chang , Frank Lambrecht
CPC classification number: G06F1/08 , G06F1/12 , G11C29/02 , G11C29/022 , G11C29/028 , G11C29/50012 , H04L7/0004 , H04L7/0008 , H04L7/0033 , H04L7/0091 , H04L7/033 , H04L7/10 , H04L25/14
Abstract: A memory controller having a data receiver to sample data at a sample timing using a strobe signal, wherein the data and the strobe signal are sent by a memory device in connection with a read operation initiated by the memory controller, and a strobe receiver to receive the strobe signal, wherein a phase of the strobe signal has a drift relative to a reference by an amount. The memory controller further having a monitoring circuit to monitor the strobe signal and determine the amount of the drift, and an adjustment circuit to update the sample timing of the data receiver based on the amount of drift determined by the monitoring signal.
Abstract translation: 一种存储器控制器，具有数据接收器，用于使用选通信号在采样定时采样数据，其中所述数据和所述选通信号由存储器件发送，与由所述存储器控制器发起的读取操作相结合;以及选通接收器，用于接收 所述选通信号，其中所述选通信号的相位相对于参考具有相对于所述量的漂移。 存储器控制器还具有监控电路以监视选通信号并确定漂移量;以及调整电路，用于基于由监视信号确定的漂移量来更新数据接收器的采样定时。
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公开(公告)号：US20150248327A1
公开(公告)日：2015-09-03
申请号：US14631570
申请日：2015-02-25
Applicant: Rambus Inc.
Inventor： Frederick A. Ware , Brent S. Haukness , John Eric Linstadt , Scott C. Best
CPC classification number: G06F11/1048 , G11C5/04 , G11C29/42 , G11C29/44 , G11C2029/0411 , G11C2029/4402
Abstract: A memory module is disclosed. The memory module includes a substrate, and respective first, second and third memory devices. The first memory device is of a first type disposed on the substrate and has addressable storage locations. The second memory device is also of the first type, and includes storage cells dedicated to store failure address information associated with defective storage locations in the first memory device. The third memory device is of the first type and includes storage cells dedicated to substitute as storage locations for the defective storage locations.
Abstract translation: 公开了一种存储器模块。 存储器模块包括衬底以及相应的第一，第二和第三存储器件。 第一存储器件是第一类型，其设置在衬底上并且具有可寻址的存储位置。 第二存储器件也是第一类型，并且包括专用于存储与第一存储器件中的不良存储位置相关联的故障地址信息的存储单元。 第三存储器件是第一类型的，并且包括专用于替换为存储位置不良的存储单元的存储单元。
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公开(公告)号：US20150138895A1
公开(公告)日：2015-05-21
申请号：US14578078
申请日：2014-12-19
Applicant: RAMBUS INC.
Inventor： Frederick A. Ware , Suresh Rajan , Scott C. Best
IPC: G11C11/4093 , G11C11/408
CPC classification number: G11C11/4082 , G06F12/06 , G06F13/1673 , G06F13/1684 , G11C5/04 , G11C7/1051 , G11C7/1078 , G11C7/22 , G11C11/4076 , G11C11/4093
Abstract: The embodiments described herein describe technologies for using the memory modules in different modes of operation, such as in a standard multi-drop mode or as in a dynamic point-to-point (DPP) mode (also referred to herein as an enhanced mode). The memory modules can also be inserted in the sockets of the memory system in different configurations.
Abstract translation: 本文描述的实施例描述了在不同操作模式下使用存储器模块的技术，例如在标准多点模式或动态点对点（DPP）模式（此处也称为增强模式）中， 。 内存模块也可以以不同的配置插入存储系统的插座。
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