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171.发明授权
公开(公告)号：US5534743A
公开(公告)日：1996-07-09
申请号：US301473
申请日：1994-09-07
Applicant: Gary W. Jones , Steven M. Zimmerman
Inventor： Gary W. Jones , Steven M. Zimmerman
IPC: G01R33/10 , G02B27/00 , G02B27/01 , G02B27/22 , G09G3/00 , H01J1/304 , H01J3/02 , H01J9/02 , H01J9/24 , H01J29/02 , H01J29/94 , H01J31/12 , H04N5/70 , H04N5/74 , H04N13/00 , H01J1/02
CPC classification number: G09G3/001 , G01R33/10 , G02B27/017 , G02B27/0172 , G02B27/0176 , G02B27/2235 , H01J1/3042 , H01J29/028 , H01J29/94 , H01J3/022 , H01J31/127 , H01J9/025 , H04N13/0422 , H04N13/0438 , H04N13/044 , H04N13/0459 , H04N13/0497 , H04N5/7408 , G02B2027/0132 , G02B2027/0136 , H01J2201/304 , H01J2201/30426 , H01J2201/30457 , H01J2201/319 , H01J2209/385 , H01J2329/00 , H01J2329/8625 , H01J2329/863 , H01J2329/864 , H04N13/0059 , H04N13/0285 , H04N13/0427 , H04N13/0456 , H04N5/70 , H04N5/7491
Abstract: A field emitter structure, comprising: a base substrate; a field emitter element on the base substrate; a multilayer differentially etched dielectric stack circumscribingly surrounding the field emitter element on the base substrate; and a gate electrode overlying the multilayer differentially etched dielectric stack, and in circumscribing spaced relationship to the field emitter element. Also disclosed are electron source devices, comprising an electron emitter element including a material selected from the group consisting of leaky dielectric materials, and leaky insulator materials, as well as electron source devices, comprising an electron emitter element including an insulator material doped with a tunneling electron emission enhancingly effective amount of a dopant species, and thin film triode devices.
Abstract translation: 一种场发射器结构，包括：基底; 基底基板上的场发射体元件; 围绕基底衬底上的场发射体元件的多层差分蚀刻介质堆叠; 以及覆盖多层差分蚀刻的电介质叠层的栅电极，并且以与外界发射极元件间隔开的关系。 还公开了电子源器件，其包括电子发射器元件，其包括选自由漏电介质材料和漏绝缘体材料组成的组的材料，以及电子源器件，其包括电子发射器元件，该电子发射器元件包括掺杂有隧道 电子发射增加有效量的掺杂物种类和薄膜三极管器件。
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公开(公告)号：US5504385A
公开(公告)日：1996-04-02
申请号：US299470
申请日：1994-08-31
Applicant: Sungho Jin , Gregory P. Kochanski , John Thomson, Jr.
Inventor： Sungho Jin , Gregory P. Kochanski , John Thomson, Jr.
CPC classification number: H01J9/025 , H01J2201/30403 , H01J2201/30457 , H01J2329/00
Abstract: In accordance with the invention, a field emission device is made by disposing emitter material on an insulating substrate, applying a sacrificial film to the emitter material and forming over the sacrificial layer a conductive gate layer having a random distribution of apertures therein. In the preferred process, the gate is formed by applying masking particles to the sacrificial film, applying a conductive film over the masking particles and the sacrificial film and then removing the masking particles to reveal a random distribution of apertures. The sacrificial film is then removed. The apertures then extend to the emitter material. In a preferred embodiment, the sacrificial film contains dielectric spacer particles which remain after the film is removed to separate the emitter from the gate. The result is a novel and economical field emission device having numerous randomly distributed emission apertures which can be used to make low cost flat panel displays.
Abstract translation: 根据本发明，通过将发射极材料设置在绝缘衬底上，将牺牲膜施加到发射极材料并在牺牲层上形成具有其中孔径随机分布的导电栅极层而形成场致发射器件。 在优选的方法中，通过将掩模颗粒施加到牺牲膜，在掩模颗粒和牺牲膜上施加导电膜，然后去除掩模颗粒以显示孔的随机分布来形成栅极。 然后去除牺牲膜。 孔然后延伸到发射体材料。 在优选实施例中，牺牲膜包含介电间隔物颗粒，其在除去膜之后保留，以将发射极与栅极分离。 结果是一种新颖且经济的场致发射装置，其具有许多随机分布的发射孔，其可用于制造低成本的平板显示器。
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173.发明授权
公开(公告)号：US5473218A
公开(公告)日：1995-12-05
申请号：US251415
申请日：1994-05-31
Applicant: Curtis D. Moyer
Inventor： Curtis D. Moyer
CPC classification number: H01J3/021 , H01J1/3042 , H01J2201/30457
Abstract: A flat, cold-cathode electron emitter including a substrate having a relatively flat surface with a low work function electron emission material layer for emitting electrons supported on the surface of the substrate. A contact conductive layer is disposed on the electron emission material layer and defines an aperture therethrough. An insulating layer is disposed on the contact conductive layer and has an aperture defined therethrough coextensive and in peripheral alignment with the aperture in the contact conductive layer and a conductive gate layer is disposed on the insulating layer. The contact conductive layer forms the field potential so that emission occurs substantially in the center of the aperture.
Abstract translation: 一种扁平的冷阴极电子发射器，包括具有相对平坦表面的基底，具有用于发射支撑在基底表面上的电子的功函数电子发射材料层。 接触导电层设置在电子发射材料层上并限定穿过其中的孔。 绝缘层设置在接触导电层上，并且具有通过共同延伸限定的孔，并且与接触导电层中的孔周边对准，并且导电栅极层设置在绝缘层上。 接触导电层形成场电位，使得发射基本上在孔的中心。
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公开(公告)号：US5463269A
公开(公告)日：1995-10-31
申请号：US847444
申请日：1992-03-06
Applicant: Steven M. Zimmerman
Inventor： Steven M. Zimmerman
CPC classification number: H01J9/025 , H01J21/105 , H01J2201/30457 , H01L2924/0002
Abstract: The present invention relates generally to a new integrated Vacuum Microelectronic Device (VMD) and a method for making the same. Vacuum Microelectronic Devices require several unique three dimensional structures: a sharp field emission tip, accurate alignment of the tip inside a control grid structure in a vacuum environment, and an anode to collect electrons emitted by the tip. Also disclosed is a new structure and a process for forming diodes, triodes, tetrodes, pentodes and other similar structures. The final structure made can also be connected to other similar VMD devices or to other electronic devices.
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公开(公告)号：US5341063A
公开(公告)日：1994-08-23
申请号：US981958
申请日：1992-11-24
Applicant: Nalin Kumar
Inventor： Nalin Kumar
CPC classification number: H01J1/3042 , H01J9/025 , H01J2201/30403 , H01J2201/30457
Abstract: A field emitter comprising a conductive metal and a diamond emission tip with negative electron affinity in ohmic contact with and protruding above the metal. The field emitter is fabricated by coating a substrate with an insulating diamond film having negative electron affinity and a top surface with spikes and valleys, depositing a conductive metal on the diamond film, and applying an etch to expose the spikes without exposing the valleys, thereby forming diamond emission tips which protrude a height above the conductive metal less than the mean free path of electrons in the diamond film.
Abstract translation: 一种场致发射器，包括导电金属和具有负电子亲和力的金刚石发射尖端，与金属欧姆接触并在其上突出。 通过用具有负电子亲和性的绝缘金刚石膜和具有尖峰和谷的顶表面涂覆衬底，在金刚石膜上沉积导电金属以及施加蚀刻以暴露尖峰而不暴露谷来制造场致发射体，从而 形成金刚石发射尖端，其突出在导电金属之上的高度小于金刚石膜中电子的平均自由程。
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Patent Agency Ranking176.发明授权Method of making atomically sharp tips useful in scanning probe microscopes 失效制造用于扫描探针显微镜的原子锋利尖端的方法
公开(公告)号：US5302239A
公开(公告)日：1994-04-12
申请号：US884482
申请日：1992-05-15
Applicant: Fred L. Roe , Kevin Tjaden
Inventor： Fred L. Roe , Kevin Tjaden
CPC classification number: G01Q70/16 , B82Y35/00 , H01J9/025 , H01J2201/30457
Abstract: An in situ plasma dry etching process for the formation of atomically sharp tips for use in high resolution microscopes in which i) a mask layer is deposited on a substrate, ii) a photoresist layer is patterned superjacent the mask layer at the sites where the tips are to be formed, iii) the mask is selectively removed by plasma etching, iv) after which the substrate is etched in the same plasma reacting chamber, thereby creating sharp microscope tips.
Abstract translation: 用于形成用于高分辨率显微镜的原子锋利尖端的原位等离子体干蚀刻工艺，其中i）掩模层沉积在基底上，ii）在尖端的位置处，将图案层叠在掩模层的上方， 要形成，iii）通过等离子体蚀刻选择性地除去掩模，iv）然后在相同的等离子体反应室中蚀刻衬底，从而产生尖锐的显微镜尖端。
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177.发明授权
公开(公告)号：US5283501A
公开(公告)日：1994-02-01
申请号：US732298
申请日：1991-07-18
Applicant: Xiaodong T. Zhu , James E. Jaskie , Robert C. Kane
Inventor： Xiaodong T. Zhu , James E. Jaskie , Robert C. Kane
CPC classification number: H01J1/3042 , H01J3/022 , H01J2201/30457
Abstract: Electron devices employing electron sources including a material having a surface exhibiting a very low/negative electron affinity such as, for example, the 111 crystallographic plane of type II-B diamond. Electron sources with geometric discontinuities exhibiting radii of curvature of greater than approximately 1000.ANG. are provided which substantially improve electron emission levels and relax tip/edge feature requirements. Electron devices employing such electron sources are described including image generation electron devices, light source electron devices, and information signal amplifier electron devices.
Abstract translation: 使用电子源的电子器件包括具有非常低/负电子亲和力的表面的材料，例如II-B型金刚石的111晶体平面。 提供具有大于约1000（Aangstroem）的曲率半径的几何不连续性的电子源，其基本上改善电子发射水平并缓和尖端/边缘特征要求。 描述了使用这种电子源的电子器件，其包括图像生成电子器件，光源电子器件和信息信号放大器电子器件。
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公开(公告)号：US5258685A
公开(公告)日：1993-11-02
申请号：US883448
申请日：1992-05-15
Applicant: James E. Jaskie , Robert C. Kane
Inventor： James E. Jaskie , Robert C. Kane
CPC classification number: B82Y15/00 , H01J1/3042 , H01J9/025 , H01J2201/30457
Abstract: A field emission electron emitter including a coating of diamond material disposed on a surface of a selectively formed conductive/semiconductive electrode wherein carbon ions are implanted at a surface of the electrode to function as nucleation sites for the diamond formation. A second field emission electron emitter is constructed by implanting carbon ions at a surface of a selectively shaped substrate to function as nucleation sites for the diamond formation. A conductive layer is deposited over the diamond and the substrate is removed to leave an electron emitter with a diamond coating.
Abstract translation: 一种场致发射电子发射器，包括设置在选择性地形成的导电/半导体电极的表面上的金刚石材料涂层，其中碳离子注入电极的表面，起到金刚石形成的成核位置的作用。 第二场致发射电子发射体是通过将碳离子注入选择性成形的衬底的表面而构成的，用作金刚石形成的成核位置。 在金刚石上沉积导电层，去除衬底以留下具有金刚石涂层的电子发射体。
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179.发明授权Method of patterning metal on a substrate using direct-write deposition of a mask 失效使用掩模的直接写入沉积在衬底上图案化金属的方法
公开(公告)号：US5244538A
公开(公告)日：1993-09-14
申请号：US736357
申请日：1991-07-26
Applicant: Nalin Kumar
Inventor： Nalin Kumar
CPC classification number: H01L21/4857 , H05K3/045 , H05K3/184 , H05K3/465 , H01J2201/30457 , H05K2201/0154 , H05K2201/0166 , H05K2201/0376 , H05K2201/2081 , H05K2203/0554 , H05K2203/107 , H05K2203/121 , H05K2203/1338 , H05K3/0023 , H05K3/0041 , H05K3/107 , H05K3/143 , H05K3/146 , H05K3/185 , H05K3/388 , H05K3/4661
Abstract: A method of patterning metal on a substrate without photolithography. The steps include providing a dielectric substrate, forming a metal mask in a predetermined pattern on the substrate without using a mask by direct-write deposition using a particle beam such as a liquid metal cluster force to form the mask, dry etching the substrate to form a plurality of channels therein, depositing a conductive metal into the channels, and removing the mask. The top of the substrate can then be planarized by polishing, or alternatively the dielectric between the metal lines can be etched. The invention is well suited for fabricating copper/polyimide substrates.
Abstract translation: 在没有光刻的基板上图案化金属的方法。 所述步骤包括提供电介质基板，在基板上以预定图案形成金属掩模，而不用使用诸如液体金属簇力的粒子束的直接写入沉积来形成掩模，干燥蚀刻基板以形成 多个通道，将导电金属沉积到通道中，以及去除掩模。 然后可以通过抛光将衬底的顶部平坦化，或者可以蚀刻金属线之间的电介质。 本发明非常适用于制造铜/聚酰亚胺基片。
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公开(公告)号：US5199918A
公开(公告)日：1993-04-06
申请号：US789237
申请日：1991-11-07
Applicant: Nalin Kumar
Inventor： Nalin Kumar
CPC classification number: H01J1/3042 , H01J9/025 , H01J2201/30403 , H01J2201/30457
Abstract: A field emitter device comprising a conductive metal and a diamond emission tip with negative electron affinity in ohmic contact with and protruding above the metal. The device is fabricated by coating a substrate with an insulating diamond film having negative electron affinity and a top surface with spikes and valleys, depositing a conductive metal on the diamond film, and applying an etch to expose the spikes without exposing the valleys, thereby forming diamond emission tips which protrude a height above the conductive metal less than the mean free path of electrons in the diamond film.
Abstract translation: 一种场致发射器件，包括导电金属和具有负电子亲和力的金刚石发射尖端，与金属欧姆接触并突出在金属上方。 该器件通过用具有负电子亲和性的绝缘金刚石膜和具有尖峰和谷的顶表面的衬底涂覆衬底，在金刚石膜上沉积导电金属，以及施加蚀刻以暴露尖峰而不暴露谷，从而形成 金刚石发射尖端突出高于导电金属的高度小于金刚石膜中电子的平均自由程。
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