公开(公告)号：US20150357201A1

公开(公告)日：2015-12-10

申请号：US14828311

申请日：2015-08-17

Applicant: Applied Materials, Inc.

Inventor： Zhijun Chen ,  Seung Park ,  Mikhail Korolik ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/311

CPC classification number: H01L21/31122 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244

Abstract: A method of etching exposed titanium oxide on heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents may combine with a nitrogen-containing precursor such as an amine (N:) containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high titanium oxide selectivity while the substrate is at elevated temperature. Titanium oxide etch may alternatively involve supplying a fluorine-containing precursor and a source of nitrogen-and-hydrogen-containing precursor to the remote plasma. The methods may be used to remove titanium oxide while removing little or no low-K dielectric, polysilicon, silicon nitride or titanium nitride.

Abstract translation: 描述了在异质结构上蚀刻暴露的氧化钛的方法，并且包括由含氟前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物可与含氮前体（例如含有胺（N））的前体结合。 由此产生的反应物在衬底处于升高的温度下蚀刻具有高钛氧化物选择性的图案化异质结构。 替代地，氧化钛蚀刻可以包括向远程等离子体供应含氟前体和含氮和氢的前体源。 该方法可用于除去少量或不含低K电介质，多晶硅，氮化硅或氮化钛的氧化钛。

公开(公告)号：US09159606B1

公开(公告)日：2015-10-13

申请号：US14448591

申请日：2014-07-31

Applicant: Applied Materials, Inc.

Inventor： Vinod R. Purayath ,  Randhir Thakur ,  Nitin K. Ingle

IPC: H01L21/76 ,  H01L21/768 ,  H01L29/06

CPC classification number: H01L21/7682 ,  H01J37/32357 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/76882 ,  H01L29/0649

Abstract: Methods are described for forming “air gaps” between adjacent copper lines on patterned substrates. The air gaps may be located between copper lines on the same layer. A sacrificial patterned dielectric layer is used as a template to form a layer of copper by physical vapor deposition in a substrate processing system (i.e. a mainframe). Without breaking vacuum, the copper is redistributed into the gaps with a copper reflow process. Dielectric material from the template is removed, again in the same mainframe, using a remote fluorine etch process leaving the gapfill copper as the structural material. A conformal capping layer (such as silicon carbon nitride) is then deposited (e.g. by ALD) to seal the patterned substrate before removing the patterned substrate from the mainframe.

Abstract translation: 描述了用于在图案化基板上的相邻铜线之间形成“气隙”的方法。 气隙可以位于同一层上的铜线之间。 牺牲图案化电介质层用作模板以通过物理气相沉积在基板处理系统（即，主机）中形成铜层。 在不破坏真空的情况下，铜通过铜回流工艺重新分配到间隙中。 使用远程氟蚀刻工艺，再次在相同的主机中除去来自模板的电介质材料，留下间隙填充铜作为结构材料。 然后在从主机移除图案化的衬底之前沉积保形覆盖层（例如氮化碳氮化物）（例如通过ALD）以密封图案化衬底。

公开(公告)号：US20150179464A1

公开(公告)日：2015-06-25

申请号：US14617779

申请日：2015-02-09

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Ching-Mei Hsu ,  Nitin K. Ingle ,  Zihui Li ,  Anchuan Wang

IPC: H01L21/3065 ,  H01L21/02

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01L21/02049 ,  H01L21/32136

Abstract: Methods of selectively etching tungsten relative to silicon-containing films (e.g. silicon oxide, silicon carbon nitride and (poly)silicon) as well as tungsten oxide are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten. The plasma effluents react with exposed surfaces and selectively remove tungsten while very slowly removing other exposed materials. Sequential and simultaneous methods are included to remove thin tungsten oxide which may, for example, result from exposure to the atmosphere.

Abstract translation: 描述了相对于含硅膜（例如氧化硅，氮化碳和（多）硅）选择性地蚀刻钨的方法以及氧化钨。 这些方法包括由含氟前体和/或氢（H 2）形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与钨反应。 等离子体流出物与暴露的表面反应并选择性地去除钨，同时非常缓慢地除去其它暴露的材料。 包括顺序和同时的方法以除去例如由于暴露于大气中而产生的薄氧化钨。

公开(公告)号：US20150132968A1

公开(公告)日：2015-05-14

申请号：US14602835

申请日：2015-01-22

Applicant: Applied Materials, Inc.

Inventor： He Ren ,  Jang-Gyoo Yang ,  Jonghoon Baek ,  Anchuan Wang ,  Soonam Park ,  Saurabh Garg ,  Xinglong Chen ,  Nitin K. Ingle

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01J37/32357

Abstract: A method of etching exposed patterned heterogeneous structures is described and includes a remote plasma etch formed from a reactive precursor. The plasma power is pulsed rather than left on continuously. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents selectively remove one material faster than another. The etch selectivity results from the pulsing of the plasma power to the remote plasma region, which has been found to suppress the number of ionically-charged species that reach the substrate. The etch selectivity may also result from the presence of an ion suppression element positioned between a portion of the remote plasma and the substrate processing region.

Abstract translation: 描述了蚀刻暴露的图案化异质结构的方法，并且包括由反应性前体形成的远程等离子体蚀刻。 等离子体功率是脉冲的，而不是连续地保持。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物选择性地比另一种更快地去除一种材料。 蚀刻选择性是由等离子体功率脉冲到远程等离子体区域而产生的，这已被发现抑制了到达衬底的离子充电物质的数量。 蚀刻选择性也可能由位于远程等离子体的一部分与基板处理区域之间的离子抑制元件的存在引起。

公开(公告)号：US20150129546A1

公开(公告)日：2015-05-14

申请号：US14513517

申请日：2014-10-14

Applicant: Applied Materials, Inc.

Inventor： Nitin K. Ingle ,  Jessica Sevanne Kachian ,  Lin Xu ,  Soonam Park ,  Xikun Wang ,  Jeffrey W. Anthis

IPC: C23F1/12 ,  C23F1/02

CPC classification number: H01L21/3065 ,  C23F1/02 ,  C23F1/12 ,  C23F4/00 ,  H01J37/3244 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/02071 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76814

Abstract: Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium, silicon carbide, silicon carbon nitride and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. No plasma excites the halogen-containing precursor either remotely or locally in embodiments.

Abstract translation: 描述了从衬底表面选择性地蚀刻含金属材料的方法。 蚀刻相对于含硅膜如硅，多晶硅，氧化硅，硅锗，碳化硅，氮化硅和/或氮化硅选择性去除含金属的材料。 这些方法包括将含金属的材料暴露于基底处理区域中含有卤素的物质。 在实施例中，没有等离子体远程地或局部地激发含卤素的前体。

公开(公告)号：US20150126040A1

公开(公告)日：2015-05-07

申请号：US14270060

申请日：2014-05-05

Applicant: Applied Materials, Inc.

Inventor： Mikhail Korolik ,  Nitin K. Ingle ,  Anchuan Wang ,  Jingjing Xu

IPC: H01L21/3065 ,  H01L29/161

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J37/32724 ,  H01L29/161 ,  H01L29/165

Abstract: Methods of selectively etching silicon germanium relative to silicon are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the silicon germanium. The plasmas effluents react with exposed surfaces and selectively remove silicon germanium while very slowly removing other exposed materials. Generally speaking, the methods are useful for removing Si(1-X)GeX (including germanium i.e. X=1) faster than Si(1-Y)GeY, for all X>Y. In some embodiments, the silicon germanium etch selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region.

Abstract translation: 描述了相对于硅选择性地蚀刻硅锗的方法。 这些方法包括使用由含氟前体形成的等离子体流出物的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与硅锗反应。 等离子体流出物与暴露的表面反应并选择性地去除硅锗，同时非常缓慢地除去其它暴露的材料。 一般来说，对于所有的X> Y，这些方法可用于比Si（1-Y）GeY更快地除去Si（1-X）GeX（包括锗，即X = 1）。 在一些实施例中，硅锗蚀刻选择性部分地来自位于远程等离子体和基板处理区域之间的离子抑制元件的存在。

公开(公告)号：US09023732B2

公开(公告)日：2015-05-05

申请号：US14246937

申请日：2014-04-07

Applicant: Applied Materials, Inc.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/263 ,  H01L21/677 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/683 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

公开(公告)号：US20140329027A1

公开(公告)日：2014-11-06

申请号：US13955640

申请日：2013-07-31

Applicant: Applied Materials, Inc.

Inventor： Jingmei Liang ,  Nitin K. Ingle ,  Sukwon Hong ,  Abhishek Dube ,  DongQing Li

IPC: B05D3/10 ,  B05D3/06 ,  B05D3/02

CPC classification number: C23C16/56 ,  C23C16/401 ,  C23C16/452 ,  C23C16/50

Abstract: Methods of forming gapfill silicon-containing layers are described. The methods may include providing or forming a silicon-and-hydrogen-containing layer on a patterned substrate. The methods include non-thermally treating the silicon-and-hydrogen-containing layer at low substrate temperature to increase the concentration of Si—Si bonds while the silicon-and-hydrogen-containing layer remains soft. The flaccid layer is able to adjust to the departure of hydrogen from the film and retain a high density without developing a stress. Film qualify is further improved by then inserting O between Si—Si bonds to expand the film in the trenches thereby converting the silicon-and-hydrogen-containing layer to a silicon-and-oxygen-containing layer.

Abstract translation: 描述形成间隙填充含硅层的方法。 所述方法可以包括在图案化衬底上提供或形成含硅和氢的层。 这些方法包括在低衬底温度下非热处理含硅和氢的层以增加Si-Si键的浓度，同时含硅和氢的层保持柔软。 松弛层能够适应于离开膜的氢离子并保持高密度而不产生应力。 然后通过在Si-Si键之间插入O以使沟槽中的膜膨胀，从而将含硅和含氢层转化为含硅和氧的层，进一步改善了膜合格性。

公开(公告)号：US20140308816A1

公开(公告)日：2014-10-16

申请号：US14314812

申请日：2014-06-25

Applicant: Applied Materials, Inc.

Inventor： Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

IPC: H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01L21/3081 ,  H01L21/32137

Abstract: Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials. The silicon selectivity results, in part, from a preponderance of hydrogen-containing precursor in the remote plasma which hydrogen terminates surfaces on the patterned heterogeneous structures. A much lower flow of the fluorine-containing precursor progressively substitutes fluorine for hydrogen on the hydrogen-terminated silicon thereby selectively removing silicon from exposed regions of silicon. The silicon selectivity also results from the presence of an ion suppressor positioned between the remote plasma and the substrate processing region. The ion suppressor reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon far faster than silicon oxide, silicon nitride and a variety of metal-containing materials.

Abstract translation: 描述了在图案化的异质结构上蚀刻暴露的硅的方法，并且包括由含氟前体和含氢前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与暴露的硅区域反应。 等离子体流出物与图案化的异质结构反应以选择性地除去硅，同时非常缓慢地除去其它暴露的材料。 硅选择性部分地导致远离等离子体中含氢前体的优势，氢终止在图案化异质结构上的表面。 含氟前体的流速要低得多，在氢封端的硅上逐渐取代氟氢，从而从硅的暴露区域选择性除去硅。 硅选择性也是由位于远程等离子体和基板处理区域之间的离子抑制器的存在引起的。 离子抑制器减少或基本上消除了到达衬底的离子充电物质的数量。 这些方法可用于选择性地除去硅比氧化硅，氮化硅和各种含金属材料更快的硅。

公开(公告)号：US20140273491A1

公开(公告)日：2014-09-18

申请号：US14287850

申请日：2014-05-27

Applicant: Applied Materials, Inc.

Inventor： Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle ,  Yunyu Wang ,  Young Lee

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01L21/31116

Abstract: A method of etching exposed silicon-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-carbon-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-carbon-containing material from the exposed silicon-and-carbon-containing material regions while very slowly removing other exposed materials. The silicon-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-carbon-containing material at more than twenty times the rate of silicon oxide.

Abstract translation: 描述了在图案化的异质结构上蚀刻暴露的含硅和碳的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与含硅和碳的材料的暴露区域反应。 等离子体流出物与图案化的异质结构反应，以便从暴露的含硅和碳的材料区域选择性地除去含硅和碳的材料，同时非常缓慢地除去其它暴露的材料。 含硅和碳的材料选择性部分取决于位于远程等离子体和基板处理区域之间的离子抑制元件的存在。 离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。 该方法可用于以超过二氧化硅的二十倍的速率选择性地除去含硅和碳的材料。