公开(公告)号：US20240361239A1

公开(公告)日：2024-10-31

申请号：US18767516

申请日：2024-07-09

申请人： Applied Materials, Inc.

发明人： Patrick Tae ,  Zhaozhao Zhu ,  Blake W. Erickson ,  Chunlei Zhang

IPC分类号： G01N21/55

CPC分类号： G01N21/55 ,  G01N2021/558

摘要： Implementations disclosed describe a system including a light source, an optical sensor, and a processing device. The light source directs, during a first time, a probe light into a processing chamber through a window. The light source ceases, during a second time, directing the probe light into the processing chamber through the window. The optical sensor detects, during the first time, a first intensity of a first light. The first light includes a portion of the probe light reflected from the window and a light transmitted from an environment of the processing chamber through the window. The optical sensor detects, during the second time, a second intensity of a second light. The second light includes the light transmitted from the environment of the processing chamber through the window. The processing device determines, using the first intensity and the second intensity, a transmission coefficient of the window.

公开(公告)号：US20240360588A1

公开(公告)日：2024-10-31

申请号：US18419835

申请日：2024-01-23

申请人： Applied Materials, Inc.

发明人： Amir H. TAVAKOLI ,  Ala MORADIAN ,  Shawn Thanhson LE

IPC分类号： C30B25/10 ,  C30B25/14

CPC分类号： C30B25/10 ,  C30B25/14

摘要： An epitaxial growth processing chamber with a component having a macrocell support structure configured with interconnecting physical supports that define fluidly-connected pores is described. A component configured for use in an epitaxial growth processing chamber having a macrocell support structure configured with interconnecting physical supports that define fluidly-connected pores is also described. The component is a baseplate, an exhaust cap, an injection ring, an injection cap, a lower reflector, an upper reflector, a lower heat shield, an upper heat shield, a cone reflector, or combinations thereof. In some instances, the component may further include an inlet flow port. In some other instances, the component may further include an inlet flow port, outlet flow port and a fluid flow wall, and optionally a fluid flow baffle, and optionally a reflective surface.

公开(公告)号：US20240360546A1

公开(公告)日：2024-10-31

申请号：US18768799

申请日：2024-07-10

申请人： Applied Materials, Inc.

发明人： Andreas LOPP ,  Stefan BANGERT

IPC分类号： C23C14/54 ,  C23C14/24 ,  H01J37/32

CPC分类号： C23C14/542 ,  C23C14/24 ,  H01J37/32651

摘要： A temperature-controlled shield for an evaporation source is described. The temperature-controlled shield is configured to provide a pre-heating zone or a post-cooling zone.

公开(公告)号：US20240359291A1

公开(公告)日：2024-10-31

申请号：US18139091

申请日：2023-04-25

申请人： Applied Materials, Inc.

发明人： Wei LU ,  Shih-Haur SHEN ,  David Maxwell GAGE ,  Jimin ZHANG ,  Taketo SEKINE ,  Haosheng WU ,  Kun XU ,  Jianshe TANG ,  Brian J. BROWN

IPC分类号： B24B49/10 ,  B24B37/34

CPC分类号： B24B49/10 ,  B24B37/345 ,  H01L21/68

摘要： A method of processing a substrate includes polishing a front surface of a substrate on a first pad coupled to a first platen. The method further includes transferring the substrate from the first pad to a second pad coupled to a second platen with a carrier head. The method further includes moving the carrier head to a scan position to place an edge of the substrate above an orientation sensor disposed at a rotational center of the second pad. The method further includes scanning the edge of the substrate with the orientation sensor to produce a signal. The method further includes analyzing the signal to locate a reference mark of the substrate to determine a rotational orientation of the substrate relative to the carrier head.

公开(公告)号：USD1049067S1

公开(公告)日：2024-10-29

申请号：US29833393

申请日：2022-04-04

申请人： Applied Materials, Inc.

设计人： Rohan Vijay Rane ,  Xue Yang Chang ,  Timothy Joseph Franklin ,  Daniel Sang Byun

摘要： FIG. 1 is a top, front, right isometric view of a ring for an anti-rotation process kit for a substrate processing chamber, showing our new design.
FIG. 2 is a bottom, left, back isometric view thereof.
FIG. 3 is a top plan view thereof.
FIG. 4 is a bottom plan view thereof.
FIG. 5 is a front elevation view thereof.
FIG. 6 is a back elevation view thereof.
FIG. 7 is a left elevation view thereof.
FIG. 8 is a right elevation view thereof; and,
FIG. 9 is an enlarged cross-sectional view taken along line 9-9 in FIG. 3 with the enlargements taken from the dashed-dot encircled portions labeled, “FIG. 9,” in FIG. 3.
The even dashed broken lines in FIG. 9 represent unclaimed environment and form no part of the claimed design. The dash-dot lines represent the boundary lines of the enlarged portion view of FIG. 9 shown in FIGS. 3 and 9 and form no part of the claimed design.

公开(公告)号：US12131948B2

公开(公告)日：2024-10-29

申请号：US18224904

申请日：2023-07-21

申请人： Applied Materials, Inc.

发明人： M. Arif Zeeshan ,  Kelvin Chan ,  Shantanu Kallakuri ,  Sony Varghese ,  John Hautala

IPC分类号： H01L21/768 ,  H01L21/48

CPC分类号： H01L21/76879 ,  H01L21/486

摘要： Embodiments herein include void-free material depositions on a substrate (e.g., in a void-free trench-filled (VFTF) component) obtained using directional etching to remove predetermined portions of a seed layer covering the substrate. In several embodiments, directional etching followed by selective deposition can enable fill material (e.g., metal) patterning in tight spaces without any voids or seams. Void-free material depositions may be used in a variety of semiconductor devices, such as transistors, dual work function stacks, dynamic random-access memory (DRAM), non-volatile memory, and the like.

公开(公告)号：US12131934B2

公开(公告)日：2024-10-29

申请号：US17063334

申请日：2020-10-05

申请人： Applied Materials, Inc.

发明人： Katherine Woo ,  Paul L. Brillhart ,  Jian Li ,  Shinnosuke Kawaguchi ,  David W. Groechel ,  Dorothea Buechel-Rimmel ,  Juan Carlos Rocha-Alvarez ,  Paul E. Fisher ,  Chidambara A. Ramalingam ,  Joseph J. Farah

IPC分类号： H01L21/67 ,  G01L9/08 ,  H01J37/32 ,  H01L21/68 ,  H04Q9/00 ,  H01L21/683

CPC分类号： H01L21/68 ,  G01L9/08 ,  H01J37/32724 ,  H04Q9/00 ,  H01J2237/20264 ,  H01L21/67103 ,  H01L21/6833 ,  H01L21/6838

摘要： Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The chamber body may define an interior volume. The systems may include a substrate support extending through the base of the chamber body. The substrate support may be configured to support a substrate within the interior volume. The systems may include a faceplate positioned within the interior volume of the chamber body. The faceplate may define a plurality of apertures through the faceplate. The systems may include a leveling apparatus seated on the substrate support. The leveling apparatus may include a plurality of piezoelectric pressure sensors.

公开(公告)号：US12131903B2

公开(公告)日：2024-10-29

申请号：US16986897

申请日：2020-08-06

申请人： Applied Materials, Inc.

发明人： Khokan Chandra Paul

IPC分类号： H01L21/02 ,  C23C16/455 ,  H01J37/32

CPC分类号： H01L21/02274 ,  C23C16/45536 ,  H01J37/32266

摘要： Examples of the present technology include semiconductor processing methods that may include generating a plasma from a deposition precursor in a processing region of a semiconductor processing chamber. The plasma may be generated at a delivered power within a first period of time when plasma power is delivered from a power source operating at a first duty cycle. The methods may further include transitioning the power source from the first duty cycle to a second duty cycle after the first period of time. A layer may be deposited on a substrate in the processing region of the semiconductor processing chamber from the generated plasma. The layer, as deposited, may be characterized by a thickness of 50 Å or less. Exemplary deposition precursors may include one or more silicon-containing precursors, and an exemplary layer deposited on the substrate may include an amorphous silicon layer.

公开(公告)号：US12130606B2

公开(公告)日：2024-10-29

申请号：US17559061

申请日：2021-12-22

申请人： APPLIED MATERIALS, INC.

发明人： Atilla Kilicarslan ,  Raechel Chu-Hui Tan ,  Brooke Elise Montgomery ,  Paul Z. Wirth

IPC分类号： G05B19/18

CPC分类号： G05B19/188 ,  G05B2219/45031

摘要： A method includes receiving first sensor data associated with a first iteration of a first recipe operation of a substrate processing recipe. The method further includes determining disturbance data, the disturbance data being a difference between the first sensor data and first setpoint data of the first recipe operation. The method further includes determining, based at least in part on the disturbance data, a first actuation value associated with one or more components of a processing chamber. Actuation of the one or more components according to the first actuation value compensates for the disturbance data. The method further includes causing the actuation of the one or more components based on the first actuation value during a subsequent iteration of the first recipe operation of the substrate processing recipe to compensate for the disturbance data.

公开(公告)号：US12130561B2

公开(公告)日：2024-10-29

申请号：US17892211

申请日：2022-08-22

申请人： Applied Materials, Inc.

发明人： Kartik Ramaswamy ,  Michael D. Willwerth ,  Yang Yang

IPC分类号： G03F7/42 ,  G03F7/00 ,  H01J37/32

CPC分类号： G03F7/70808 ,  G03F7/42 ,  G03F7/427 ,  G03F7/70925 ,  H01J37/32633 ,  H01J2237/3342

摘要： Apparatus for processing substrates can include a gas distribution plate that includes an upper plate and a lower plate and a solid disk between the upper plate and the lower plate. Each of the upper plate and the lower plate has a central region and an outer region surrounding the central region, the central region being solid and the outer region having a plurality of through holes. The upper plate and the lower plate are coaxially aligned along a central axis extending through a center of the central region of the upper plate and a center of the central region of the lower plate. The solid disk is coaxially aligned with the upper plate and the lower plate. The solid disk is configured to block transmission of ultraviolet radiation through the solid disk.