公开(公告)号：US20100158427A1

公开(公告)日：2010-06-24

申请号：US12640627

申请日：2009-12-17

Applicant: Byung-Seok CHOI ,  Dae Kon OH ,  O-Kyun KWON ,  Dong Churl KIM ,  Kisoo KIM ,  Hyun Soo KIM

Inventor： Byung-Seok CHOI ,  Dae Kon OH ,  O-Kyun KWON ,  Dong Churl KIM ,  Kisoo KIM ,  Hyun Soo KIM

IPC: G02F1/035

CPC classification number: H01S5/50 ,  G02F1/2955 ,  G02F2001/0155 ,  G02F2001/0156 ,  G02F2202/06 ,  G02F2202/101 ,  G02F2202/102 ,  G02F2203/02 ,  G02F2203/15 ,  G02F2203/20 ,  G02F2203/70

Abstract: An optical amplifier includes a passive waveguide region and an active waveguide region. The passive waveguide region is configured to receive an incident optical signal and adjust a mode of the optical signal. The active waveguide region is integrated to the passive waveguide region and configured to perform gain modulation on the optical signal received from the passive waveguide region by changing density of carriers in response to a current applied to the active waveguide region. Internal loss of the active waveguide region is adjusted to produce a resonance effect and thereby to increase bandwidth of the active waveguide. Therefore, the optical amplifier can have a wide bandwidth under a low-current condition.

Abstract translation: 光放大器包括无源波导区域和有源波导区域。 无源波导区域被配置为接收入射光信号并调整光信号的模式。 有源波导区域被集成到无源波导区域，并被配置为响应于施加到有源波导区域的电流改变载波的密度，对从无源波导区域接收的光信号执行增益调制。 有源波导区域的内部损耗被调节以产生共振效应，从而增加有源波导的带宽。 因此，光放大器可以在低电流条件下具有宽带宽。

公开(公告)号：US07489873B2

公开(公告)日：2009-02-10

申请号：US11284632

申请日：2005-11-22

Applicant: Young Ahn Leem ,  Dae Su Yee ,  Eun Deok Sim ,  Dong Churl Kim ,  Kyung Hyun Park

Inventor： Young Ahn Leem ,  Dae Su Yee ,  Eun Deok Sim ,  Dong Churl Kim ,  Kyung Hyun Park

IPC: H04B10/17

CPC classification number: H04B10/299 ,  H01S5/02248 ,  H01S5/4006

Abstract: The 3R regeneration system for a retiming, reshaping, and reamplifying an optical signal includes: first and second input ports in which a connected optical signal is input; an interferometer including first and second branches formed on a substrate, split at a common input node, combined at a common output node, semiconductor optical amplifiers in each of the first and second branches, the first branch being connected to the first input port, and the common input node being connected to the second input port; a self-pulsating laser diode monolithically integrated with the interferometer between one of the first input port and the first branch, and the second input port and the common input node on the substrate, receiving an optical signal, and outputting the optical signal regenerated by optical injection locking; and an output port connected to the common output node.

Abstract translation: 用于重新定标和重新放大光信号的3R再生系统包括：输入连接的光信号的第一和第二输入端口; 干涉仪，包括形成在基板上的第一和第二分支，在公共输入节点处分开，在公共输出节点处组合，第一和第二分支中的每一个中的半导体光放大器，第一分支连接到第一输入端口，以及 所述公共输入节点连接到所述第二输入端口; 在第一输入端口和第一分支之间与干涉仪单片集成的自脉动激光二极管，以及基板上的第二输入端口和公共输入节点，接收光信号，并输出由光学信号再生的光信号 注射锁定 以及连接到公共输出节点的输出端口。

公开(公告)号：US07012945B2

公开(公告)日：2006-03-14

申请号：US10725822

申请日：2003-12-01

Applicant: Kyung-Hyun Park ,  Young-Ahn Leem ,  Dong-Churl Kim ,  Dae-Su Yee ,  Sung-Bock Kim ,  Yong-Soon Baek

Inventor： Kyung-Hyun Park ,  Young-Ahn Leem ,  Dong-Churl Kim ,  Dae-Su Yee ,  Sung-Bock Kim ,  Yong-Soon Baek

IPC: H01S5/00

CPC classification number: H01S5/227 ,  H01S5/028 ,  H01S5/0623 ,  H01S5/06258 ,  H01S5/0658 ,  H01S5/1215 ,  H01S5/1237 ,  H01S5/2081 ,  H01S5/2226 ,  H01S5/3213 ,  H01S5/32333 ,  H01S2301/173

Abstract: A multi DFB laser diode for generating spontaneous pulses comprises first and second DFB sections each of which has a substrate including a diffraction grating, an active layer formed on the substrate, a clad layer formed on the active layer and including a refraction varying layer, and an electrode formed on the active layer; and a phase tuning section including a substrate, an active layer formed on the substrate, a clad layer formed on the active layer, and an electrode isolated from the electrode of the first and second DFB sections. The refraction varying layer in the active layer of the first DFB section has a refractive index different from that of the refraction varying layer in the active layer of the second DFB section.

Abstract translation: 用于产生自发脉冲的多DFB激光二极管包括第一和第二DFB部分，每个DFB部分具有包括衍射光栅的衬底，在衬底上形成的有源层，形成在有源层上并包括折射变化层的覆层，以及 形成在有源层上的电极; 以及相位调谐部，其包括基板，形成在所述基板上的有源层，形成在所述有源层上的覆盖层，以及与所述第一DFB部和所述第二DFB部的电极隔离的电极。 第一DFB部分的有源层中的折射变化层具有与第二DFB部分的有源层中的折射变化层的折射率不同的折射率。

公开(公告)号：US06928098B2

公开(公告)日：2005-08-09

申请号：US10632587

申请日：2003-07-31

Applicant: Dong-Churl Kim ,  Young-Ahn Leem ,  Dae-Su Yee ,  Kyung-Hyun Pakr ,  Sung-Bock Kim ,  Yong-Soon Baek ,  Eun-Deok Sim

Inventor： Dong-Churl Kim ,  Young-Ahn Leem ,  Dae-Su Yee ,  Kyung-Hyun Pakr ,  Sung-Bock Kim ,  Yong-Soon Baek ,  Eun-Deok Sim

IPC: H01S5/12 ,  H01S5/0625 ,  H01S5/065 ,  H01S5/00 ,  H01S3/08

CPC classification number: H01S5/06258 ,  H01S5/0657

Abstract: Disclosed is a high frequency optical pulse source generating stable optical pulses over a wide current range in an optical transmission system to enhance stability and reliability, the high frequency optical pulse source implementing, in one chip, a multi-section distributed feedback (DFB) laser diode with a phase control section arranged between two DFB laser diodes. By controlling the current applied to the electrode of the phase control section while applying currents to the first and second DFB sections, the present invention causes self-mode locking between the compound-cavity modes having similar threshold currents, thereby generating stable tens GHz-level optical pulses. Hence, the present invention generates optical pulses uniformly over a wide current range, thereby enhancing the stability and reliability of the element.

Abstract translation: 公开了一种在光传输系统中在宽电流范围内产生稳定的光脉冲以提高稳定性和可靠性的高频光脉冲源，高频光脉冲源在一个芯片中实现了多段分布反馈（DFB）激光器 二极管，相位控制部分布置在两个DFB激光二极管之间。 通过控制施加到相位控制部分的电极的电流，同时向第一和第二DFB部分施加电流，本发明引起具有类似阈值电流的化合物腔模式之间的自锁定，从而产生稳定的数十GHz级 光脉冲。 因此，本发明在宽电流范围内均匀地产生光脉冲，从而提高元件的稳定性和可靠性。

公开(公告)号：US08804232B2

公开(公告)日：2014-08-12

申请号：US13307067

申请日：2011-11-30

Applicant: Dong Churl Kim ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

Inventor： Dong Churl Kim ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

IPC: H01S5/10

CPC classification number: H01S5/1028 ,  H01S5/0265 ,  H01S5/0425 ,  H01S5/1003 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/2222 ,  H01S2301/16

Abstract: A semiconductor optical device includes a first mode converting core, a light amplification core, a second mode converting core, and a light modulation core disposed in a first mode converting region, a light amplification region, a second mode converting region, and a light modulating region of a semiconductor substrate, respectively, and a current blocking section covering at least sidewalls and a top surface of the light amplification core. The first mode converting core, the light amplification core, the second mode converting core, and the light modulation core are arranged along one direction in the order named, and are connected to each other in butt joints. The current blocking section includes first, second, and third cladding patterns sequentially stacked. The second cladding pattern is doped with dopants of a first conductivity type, and the first and third cladding patterns are doped with dopants of a second conductivity type.

Abstract translation: 半导体光学器件包括第一模式转换核心，光放大核心，第二模式转换核心和设置在第一模式转换区域中的光调制核心，光放大区域，第二模式转换区域和光调制 区域，以及至少覆盖光放大芯的侧壁和顶表面的电流阻挡部分。 第一模式转换核心，光放大核心，第二模式转换核心和光调制核心按照命名的顺序沿一个方向布置，并且在对接中彼此连接。 电流阻挡部分包括顺序层叠的第一，第二和第三包层图案。 第二包层图案掺杂有第一导电类型的掺杂剂，并且第一和第三包层图案掺杂有第二导电类型的掺杂剂。

公开(公告)号：US07782909B2

公开(公告)日：2010-08-24

申请号：US12192527

申请日：2008-08-15

Applicant: Kwang Ryong Oh ,  Jong Hoi Kim ,  Dong Churl Kim ,  Oh Kee Kwon ,  Ki Soo Kim ,  Ki Hong Yoon

Inventor： Kwang Ryong Oh ,  Jong Hoi Kim ,  Dong Churl Kim ,  Oh Kee Kwon ,  Ki Soo Kim ,  Ki Hong Yoon

IPC: H01S3/30

CPC classification number: G02F1/3534 ,  G02F2203/13 ,  H01S1/02 ,  H01S5/141 ,  H01S5/4062 ,  H01S5/4087

Abstract: Provided is a frequency-tunable terahertz light source device. The frequency-tunable terahertz light source device satisfies a Littrow diffraction condition at a wavelength and simultaneously satisfies a Littman-Metcalf diffraction condition at another wavelength using a double diffraction grating having two grating periods. Thus, oscillations simultaneously occur at the two different wavelengths, such that a terahertz wave can be stably generated by beating of the two oscillation wavelengths. In addition, the frequency-tunable terahertz light source device can readily change a frequency up to several terahertz and can be fabricated in a small size.

Abstract translation: 提供了一种频率可调的太赫兹光源装置。 频率可调谐的太赫兹光源装置在波长处满足Littrow衍射条件，并且使用具有两个光栅周期的双衍射光栅同时满足另一个波长的Littman-Metcalf衍射条件。 因此，振荡同时发生在两个不同的波长处，使得可以通过拍摄两个振荡波长来稳定地产生太赫兹波。 此外，频率可调谐的太赫兹光源装置可以容易地将频率改变到几个太赫兹，并且可以以小尺寸制造。

公开(公告)号：US07720128B2

公开(公告)日：2010-05-18

申请号：US11438201

申请日：2006-05-22

Applicant: Young Ahn Leem ,  Eun Deok Sim ,  Dong Churl Kim ,  Kyung Hyun Park

Inventor： Young Ahn Leem ,  Eun Deok Sim ,  Dong Churl Kim ,  Kyung Hyun Park

IPC: H01S3/08

CPC classification number: H01S5/065 ,  H01S5/0625 ,  H01S5/0657 ,  H01S5/1039 ,  H01S5/1203

Abstract: Provided are a laser diode generating passive mode locking that does not contain non-linear sector of an SA, and a method of creating an optical pulse using the same diode. The laser diode includes a DFB sector serving as a reflector and a gain sector. The gain sector is connected to the DFB sector and includes an as-cleaved facet formed at the end of the gain sector. When a current less than a threshold current is applied to the DFB sector to allow the DFB sector to operate as a reflector, passive mode locking occurs swiftly and therefore a sector of the SA is not required, which makes manufacturing simple. Also, it is possible to effectively extend a frequency variable region compared to using of the SA.

Abstract translation: 提供了一种激光二极管，其产生不包含SA的非线性扇区的无源模式锁定，以及使用相同二极管产生光脉冲的方法。 激光二极管包括用作反射器的DFB扇区和增益扇区。 增益扇区连接到DFB扇区，并包括在增益扇区末端形成的切割面。 当将小于阈值电流的电流施加到DFB扇区以允许DFB扇区作为反射器操作时，被动模式锁定迅速发生，因此不需要SA的扇区，这使制造变得简单。 此外，与使用SA相比，可以有效地扩展频率可变区域。

公开(公告)号：US20100092175A1

公开(公告)日：2010-04-15

申请号：US12367431

申请日：2009-02-06

Applicant: Hyun Soo KIM ,  O-Kyun Kwon ,  Dong Churl Kim ,  Byung-Seok Choi ,  Kisoo Kim ,  Dae Kon Oh

Inventor： Hyun Soo KIM ,  O-Kyun Kwon ,  Dong Churl Kim ,  Byung-Seok Choi ,  Kisoo Kim ,  Dae Kon Oh

IPC: H04J14/02 ,  H01S3/16

CPC classification number: H01S5/50 ,  H01S5/026 ,  H01S5/0608 ,  H01S5/06258 ,  H01S5/1014 ,  H01S5/509

Abstract: Provided are a semiconductor optical amplifier and an optical signal processing method using the same. The reflective semiconductor optical amplifier includes: an optical signal amplification region operating to allow a downward optical signal incident from the external to obtain a gain; and an optical signal modulation region connected to the optical signal amplification region and generating a modulated optical signal. The downward optical signal is amplified through a cross gain modulation using the modulated optical signal and is outputted as an upward optical signal.

Abstract translation: 提供了一种半导体光放大器和使用其的光信号处理方法。 反射半导体光放大器包括：光信号放大区域，其操作以允许从外部入射的向下的光信号获得增益; 以及连接到光信号放大区域并产生调制光信号的光信号调制区域。 向下的光信号通过使用调制光信号的交叉增益调制进行放大，并作为向上的光信号输出。

公开(公告)号：US07680169B2

公开(公告)日：2010-03-16

申请号：US10726141

申请日：2003-12-01

Applicant: Kyung-Hyun Park ,  Dae-Su Yee ,  Dong-Churl Kim ,  Young-Ahn Leem ,  Sung-Bock Kim

Inventor： Kyung-Hyun Park ,  Dae-Su Yee ,  Dong-Churl Kim ,  Young-Ahn Leem ,  Sung-Bock Kim

IPC: H01S5/00

CPC classification number: B82Y20/00 ,  H01S5/0265 ,  H01S5/06258 ,  H01S5/0657 ,  H01S5/1228 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/227 ,  H01S5/34306

Abstract: A multi-section semiconductor laser diode is disclosed. The laser diode includes a complex-coupled DFB laser section that includes a complex-coupled grating and an active structure for controlling the intensity of oscillating laser light, to oscillate laser light in a single mode, and an external cavity including a phase control section and an amplifier section, the phase control section having a passive waveguide that controls a phase variation of feedback laser light, the amplification section having an active structure that controls the strength of the feedback laser light. Currents are separately provided to the three sections to generate optical pulses with tuning range of tens of GHz. Applications include the clock recovery in the 3R regeneration of the optical communication.

Abstract translation: 公开了一种多段半导体激光二极管。 激光二极管包括复耦DFB激光器部分，其包括复耦合光栅和用于控制振荡激光的强度，以单一模式振荡激光的有源结构，以及包括相位控制部分的外部腔和 放大器部分，相位控制部分具有控制反馈激光的相位变化的无源波导，该放大部分具有控制反馈激光强度的有源结构。 电流分别提供给三个部分，以产生具有几十GHz调谐范围的光脉冲。 应用包括在光通信的3R再生中的时钟恢复。

公开(公告)号：US20120281274A1

公开(公告)日：2012-11-08

申请号：US13307067

申请日：2011-11-30

Applicant: Dong Churl KIM ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

Inventor： Dong Churl KIM ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

IPC: H01S5/20 ,  H01L21/04

CPC classification number: H01S5/1028 ,  H01S5/0265 ,  H01S5/0425 ,  H01S5/1003 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/2222 ,  H01S2301/16

Abstract: A semiconductor optical device includes a first mode converting core, a light amplification core, a second mode converting core, and a light modulation core disposed in a first mode converting region, a light amplification region, a second mode converting region, and a light modulating region of a semiconductor substrate, respectively, and a current blocking section covering at least sidewalls and a top surface of the light amplification core. The first mode converting core, the light amplification core, the second mode converting core, and the light modulation core are arranged along one direction in the order named, and are connected to each other in butt joints. The current blocking section includes first, second, and third cladding patterns sequentially stacked. The second cladding pattern is doped with dopants of a first conductivity type, and the first and third cladding patterns are doped with dopants of a second conductivity type.

Abstract translation: 半导体光学器件包括第一模式转换核心，光放大核心，第二模式转换核心和设置在第一模式转换区域中的光调制核心，光放大区域，第二模式转换区域和光调制 区域，以及至少覆盖光放大芯的侧壁和顶表面的电流阻挡部分。 第一模式转换核心，光放大核心，第二模式转换核心和光调制核心按照命名的顺序沿一个方向布置，并且在对接中彼此连接。 电流阻挡部分包括顺序层叠的第一，第二和第三包层图案。 第二包层图案掺杂有第一导电类型的掺杂剂，并且第一和第三包层图案掺杂有第二导电类型的掺杂剂。