SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
    11.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME 有权
    半导体器件及其形成方法

    公开(公告)号:US20100301448A1

    公开(公告)日:2010-12-02

    申请号:US12847974

    申请日:2010-07-30

    CPC classification number: H01L21/76267 H01L21/76283

    Abstract: Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.

    Abstract translation: 提供半导体及其形成方法。 该方法包括在衬底中局部形成掩埋绝缘层。 蚀刻衬底以形成露出掩埋绝缘层的开口,并且在掩埋绝缘层上形成从衬底至少一个方向间隔开的硅图案。 形成第一绝缘层以包围硅图案。

    METHOD OF FORMING OPTICAL WAVEGUIDE
    12.
    发明申请
    METHOD OF FORMING OPTICAL WAVEGUIDE 有权
    形成光波导的方法

    公开(公告)号:US20100144075A1

    公开(公告)日:2010-06-10

    申请号:US12491443

    申请日:2009-06-25

    CPC classification number: G02B6/136 G02B6/132

    Abstract: Provided is a method of forming optical waveguide. The method includes forming a trench on a semiconductor substrate to define an active portion, and partially oxidizing the active portion. An non-oxidized portion of the active portion is included in a core through which an optical signal passes, and an oxidized portion of the active portion is included in a cladding.

    Abstract translation: 提供一种形成光波导的方法。 该方法包括在半导体衬底上形成沟槽以限定有源部分,并部分氧化活性部分。 有源部分的非氧化部分包括在光信号通过的芯中,有源部分的氧化部分包含在包层中。

    Waveguide structure
    13.
    发明授权
    Waveguide structure 失效
    波导结构

    公开(公告)号:US07693384B2

    公开(公告)日:2010-04-06

    申请号:US12111884

    申请日:2008-04-29

    CPC classification number: G02B6/12007

    Abstract: A waveguide structure is provided. The waveguide structure includes: a slot channel waveguide including first and second patterns, which are spaced apart from each other to define a slot; a first upper layer covering at least a portion of the slot channel waveguide; and a second upper layer covering the remaining portion of the slot channel waveguide. A thermo-optic coefficient (TOC) of the channel waveguide times a TOC of the second upper layer is a negative number.

    Abstract translation: 提供了一种波导结构。 波导结构包括:缝隙通道波导,包括第一和第二图案,它们彼此间隔开以限定狭槽; 覆盖所述槽道波导的至少一部分的第一上层; 以及覆盖槽道波导的剩余部分的第二上层。 通道波导的热光系数(TOC)乘以第二上层的TOC是负数。

    GAS SENSING APPARATUS AND METHOD OF SENSING GAS USING THE SAME
    15.
    发明申请
    GAS SENSING APPARATUS AND METHOD OF SENSING GAS USING THE SAME 有权
    气体感测装置和使用该气体的气体感测方法

    公开(公告)号:US20090153864A1

    公开(公告)日:2009-06-18

    申请号:US12111864

    申请日:2008-04-29

    CPC classification number: G01N21/3504

    Abstract: Provided are a gas sensing apparatus and a gas sensing method using the apparatus. The gas sensing apparatus includes a detection chamber, a light source, a light sensor, a gas source, and a controller. The light source is disposed at one end of the detection chamber, and a light sensor is disposed at the other end of the detection chamber. The gas source provides gas to the detection chamber. The controller controls the light source and the light sensor. The light source includes a laser supplying laser light, and a light scanner reflecting and scanning the laser light in the detection chamber. The controller includes a phase sensitive detector electrically connected to the light sensor.

    Abstract translation: 提供了一种使用该装置的气体感测装置和气体感测方法。 气体感测装置包括检测室,光源,光传感器,气体源和控制器。 光源设置在检测室的一端,光检测器设置在检测室的另一端。 气体源向检测室提供气体。 控制器控制光源和光传感器。 光源包括提供激光的激光和在检测室中反射和扫描激光的光扫描器。 控制器包括电连接到光传感器的相敏检测器。

    Abrupt metal-insulator transition device, circuit for removing high-voltage noise using the abrupt metal-insulator transition device, and electrical and/or electronic system comprising the circuit
    16.
    发明授权
    Abrupt metal-insulator transition device, circuit for removing high-voltage noise using the abrupt metal-insulator transition device, and electrical and/or electronic system comprising the circuit 有权
    突然的金属 - 绝缘体转换装置,用于使用突然的金属 - 绝缘体转换装置去除高压噪声的电路,以及包括该电路的电和/或电子系统

    公开(公告)号:US07489492B2

    公开(公告)日:2009-02-10

    申请号:US12021764

    申请日:2008-01-29

    CPC classification number: H01L49/003

    Abstract: Provided are an abrupt metal-insulator transition (MIT) device for bypassing super-high voltage noise to protect an electric and/or electronic system, such as, a high-voltage switch, from a super-high voltage, a high-voltage noise removing circuit for bypassing the super-high voltage noise using the abrupt MIT device, and an electric and/or electronic system including the high-voltage noise removing circuit. The abrupt MIT device includes a substrate, a first abrupt MIT structure, and a second abrupt MIT structure. The first and second abrupt MIT structures are formed on an upper surface and a lower surface, respectively, of the substrate. The high-voltage noise removing circuit includes an abrupt MIT device chain connected in parallel to the electric and/or electronic system to be protected. The abrupt MIT device chain includes at least two abrupt MIT devices serially connected to each other.

    Abstract translation: 提供了用于绕过超高压噪声以保护诸如高压开关的电和/或电子系统的突发金属 - 绝缘体转变(MIT)装置,从超高电压,高压噪声 使用突发MIT装置绕过超高压噪声的除电路,以及包括高压噪声去除电路的电气和/或电子系统。 突变MIT装置包括基板,第一突发MIT结构和第二突发MIT结构。 第一和第二突变MIT结构分别形成在基板的上表面和下表面上。 高电压噪声去除电路包括与要保护的电和/或电子系统并联连接的突变MIT装置链。 突发MIT设备链包括彼此串行连接的至少两个突发MIT设备。

    WAVEGUIDE STRUCTURE AND ARRAYED WAVEGUIDE GRATING STRUCTURE
    18.
    发明申请
    WAVEGUIDE STRUCTURE AND ARRAYED WAVEGUIDE GRATING STRUCTURE 有权
    波导结构和阵列波导光栅结构

    公开(公告)号:US20090252457A1

    公开(公告)日:2009-10-08

    申请号:US12199517

    申请日:2008-08-27

    CPC classification number: G02B6/12011 G02B2006/12119

    Abstract: Provided are a waveguide structure and an arrayed waveguide grating structure. The arrayed waveguide grating structure includes an input star coupler, an output star coupler, and a plurality of arrayed waveguides optically connecting the input star coupler and the output star coupler. Each of the arrayed waveguides includes at least one section having a high confinement factor and at least two sections having a relatively low confinement factor. The sections of the arrayed waveguides having a high confinement factor have the same structure.

    Abstract translation: 提供了一种波导结构和阵列波导光栅结构。 阵列波导光栅结构包括输入星形耦合器,输出星形耦合器以及光学地连接输入星形耦合器和输出星形耦合器的多个阵列波导。 每个阵列波导包括具有高约束因子的至少一个部分和具有相对较低约束因子的至少两个部分。 具有高约束因子的阵列波导的部分具有相同的结构。

    PHOTONICS DEVICE
    19.
    发明申请
    PHOTONICS DEVICE 审中-公开
    光电设备

    公开(公告)号:US20090154880A1

    公开(公告)日:2009-06-18

    申请号:US12118568

    申请日:2008-05-09

    CPC classification number: G02B6/12016 G02B6/12011 G02B6/132

    Abstract: Provided is a photonics device. The photonics device includes: a substrate including a star coupler region and a transition region; a lower core layer formed on the substrate; and upper core patterns formed on the substrate to define a waveguide. The upper core patterns are disposed on the lower core layer at the transition region, so that the transition region has a multi-layered core structure.

    Abstract translation: 提供了一种光子器件。 光子学器件包括:包括星形耦合器区域和过渡区域的衬底; 形成在所述基板上的下芯层; 以及形成在基板上以限定波导的上部芯图案。 上芯层图案在过渡区域设置在下芯层上,使得过渡区域具有多层芯结构。

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