公开(公告)号：US20080017100A1

公开(公告)日：2008-01-24

申请号：US11526067

申请日：2006-09-25

Applicant: Jen-Inn Chyi ,  Guan-Ting Chen

Inventor： Jen-Inn Chyi ,  Guan-Ting Chen

IPC: C30B23/00

CPC classification number: C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  C30B29/403 ,  C30B29/406 ,  C30B29/605

Abstract: A GaN based substrate is obtained with a simple etching. The GaN based substrate is separate from another base substrate with the etching. The whole process is easy and costs low. The substrate is made of a material having a matching lattice length for a lattice structure so that the substrate has good characteristics. And the GaN based substrate has good heat dissipation so that the stability and life-time of GaN based devices on the GaN based substrate are enhanced even when they are constantly operated under a high power.

Abstract translation: 通过简单的蚀刻获得GaN基衬底。 基于GaN的衬底与另一个基底基板分离。 整个过程很简单，成本低廉。 衬底由具有格子结构匹配的晶格长度的材料制成，使得衬底具有良好的特性。 并且GaN基衬底具有良好的散热性，使得GaN基衬底上的GaN基器件的稳定性和寿命即使在高功率下不断运行时也能够提高。

公开(公告)号：US20050279990A1

公开(公告)日：2005-12-22

申请号：US10870347

申请日：2004-06-17

Applicant: Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

Inventor： Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

IPC: H01L29/06 ,  H01L33/38 ,  H01L33/46 ,  H01L33/62

CPC classification number: H01L33/38 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/05099

Abstract: A light-emitting device comprises a multi-layer structure including one or more active layer configured to irradiate light in response to the application of an electric signal, a transparent passivation layer laid over an outmost surface of the multi-layer stack, a reflector layer laid over the passivation layer, and a plurality of electrode pads coupled with the multi-layer structure. In a manufacture process of the light-emitting device, the reflector layer and the passivation layer are patterned to form at least one opening exposing an area of the multi-layer structure. One electrode pad is formed through the opening of the reflector layer and the passivation layer to connect with the multi-layer structure

Abstract translation: 发光装置包括多层结构，其包括响应于电信号的施加而被配置为照射光的一个或多个有源层，布置在多层堆叠的最外表面上的透明钝化层，反射层 铺设在钝化层上，以及与多层结构耦合的多个电极焊盘。 在发光器件的制造工艺中，对反射层和钝化层进行构图以形成暴露多层结构区域的至少一个开口。 一个电极焊盘通过反射层的开口和钝化层形成，以与多层结构连接

公开(公告)号：US06514814B2

公开(公告)日：2003-02-04

申请号：US09884029

申请日：2001-06-20

Applicant: Cheng-Chung Jaing ,  Jyh-Shin Chen ,  Jen-Inn Chyi ,  Jeng-Jiing Sheu

Inventor： Cheng-Chung Jaing ,  Jyh-Shin Chen ,  Jen-Inn Chyi ,  Jeng-Jiing Sheu

IPC: H01L218242

CPC classification number: H01L28/56 ,  C23C14/088 ,  H01L28/60 ,  H01L28/75

Abstract: A preparation for forming a thin film capacitor includes forming an amorphous ferroelectric film, such as barium strontium titanate [(Ba,Sr)TiO3] film, for use as an interface between a metal electrode and a polycrystalline ferroelectric film, such as (Ba,Sr) TiO3 film. The polycrystalline ferroelectric film serves as a dielectric layer of the thin film capacitor in view of the fact that the polycrystalline ferroelectric film has a high dielectric constant. The amorphous ferroelectric film serves as a buffer layer for inhibiting the leakage current of the thin film capacitor. The amorphous ferroelectric film is grown by sputtering and by introducing a working gas, such as argon, and a reactive gas, such as oxygen, into a reaction chamber in which a plasma is generated at room temperature.

Abstract translation: 用于形成薄膜电容器的制备包括：形成诸如钛酸锶钡[（Ba，Sr）TiO 3]膜的非晶铁电体膜，用作金属电极和多晶铁电体膜之间的界面，例如（Ba， Sr）TiO3膜。 鉴于多晶强电介质膜具有高介电常数的事实，多晶铁电体膜用作薄膜电容器的电介质层。 非晶铁电体膜用作抑制薄膜电容器的漏电流的缓冲层。 通过溅射和诸如氩的工作气体和诸如氧的反应性气体引入到在室温下产生等离子体的反应室中生长非晶铁电膜。

公开(公告)号：US08594474B2

公开(公告)日：2013-11-26

申请号：US13344657

申请日：2012-01-06

Applicant: Hung-Chih Lu ,  Jen-Inn Chyi

Inventor： Hung-Chih Lu ,  Jen-Inn Chyi

IPC: G02B6/34 ,  G02F1/295

CPC classification number: G02B6/29353

Abstract: A Mach-Zehnder wavelength division multiplexer (WDM) is provided. The WDM has a short length with flat passband and low crosstalk. Since passband is flattened, crosstalk is reduced and length of the WDM is shortened, the WDN can be used for optical communication and optical interconnection in a single chip.

Abstract translation: 提供了一种马赫曾德尔波分多路复用器（WDM）。 WDM具有短通道，通带平坦，串扰低。 由于通带扁平化，串扰减少，WDM长度缩短，WDN可用于单芯片中的光通信和光互连。

公开(公告)号：US20130240895A1

公开(公告)日：2013-09-19

申请号：US13571041

申请日：2012-08-09

Applicant: Jen-Inn CHYI ,  Geng-Yen Lee ,  Hsueh-Hsing Liu

Inventor： Jen-Inn CHYI ,  Geng-Yen Lee ,  Hsueh-Hsing Liu

IPC: H01L29/205

CPC classification number: H01L29/66212 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/475 ,  H01L29/7787 ,  H01L29/872

Abstract: A semiconductor element having a high breakdown voltage includes a substrate, a buffer layer, a semiconductor composite layer and a bias electrode. The buffer layer disposed on the substrate includes a high edge dislocation defect density area. The semiconductor composite layer disposed on the buffer layer includes a second high edge dislocation defect density area formed due to the first high edge dislocation defect density area. The bias electrode is disposed on the semiconductor composite layer. A virtual gate effect of defect energy level capturing electrons is generated due to the first and second high edge dislocation defect density areas, such that an extended depletion region expanded from the bias electrode is formed at the semiconductor composite layer. When the bias electrode receives a reverse bias, the extended depletion region reduces a leakage current and increases the breakdown voltage of the semiconductor element.

Abstract translation: 具有高击穿电压的半导体元件包括衬底，缓冲层，半导体复合层和偏置电极。 设置在基板上的缓冲层包括高边缘位错缺陷密度区域。 设置在缓冲层上的半导体复合层包括由于第一高边缘位错缺陷密度区域而形成的第二高边缘位错缺陷密度区域。 偏置电极设置在半导体复合层上。 由于第一和第二高边缘位错缺陷密度区域产生缺陷能级捕获电子的虚拟栅极效应，使得在半导体复合层处形成从偏置电极扩展的扩展的耗尽区。 当偏置电极接收到反向偏压时，扩展耗尽区减小漏电流并增加半导体元件的击穿电压。

公开(公告)号：US08524583B2

公开(公告)日：2013-09-03

申请号：US13177330

申请日：2011-07-06

Applicant: Jen-Inn Chyi ,  Hsueh-Hsing Liu ,  Hsien Yu Lin

Inventor： Jen-Inn Chyi ,  Hsueh-Hsing Liu ,  Hsien Yu Lin

IPC: H01L21/205

CPC classification number: H01L21/02639 ,  C30B23/025 ,  C30B23/04 ,  C30B25/04 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/16 ,  H01L33/20

Abstract: A method for growing a semipolar nitride comprises steps: forming a plurality of parallel discrete trenches on a silicon substrate, each discrete trenches having a first wall and a second wall, wherein a tilt angle is formed between the surface of the silicon substrate and the first wall; forming a buffer layer on the silicon substrate and the trenches, wherein the buffer layer on the first wall has a plurality of growing zones and a plurality of non-growing zones among the growing zones and complementary to the growing zones; forming a cover layer on the buffer layer and revealing the growing zones; and growing a semipolar nitride from the growing zones of the buffer layer and covering the cover layer. Thereby cracks caused by thermal stress between the silicon substrate and semipolar nitride are decreased and the quality of the semipolar nitride film is improved.

Abstract translation: 用于生长半极性氮化物的方法包括以下步骤：在硅衬底上形成多个平行的离散沟槽，每个离散的沟槽具有第一壁和第二壁，其中在硅衬底的表面和第一壁之间形成倾斜角 壁; 在所述硅衬底和所述沟槽上形成缓冲层，其中所述第一壁上的所述缓冲层在所述生长区中具有多个生长区和多个非生长区，并与所述生长区互补; 在缓冲层上形成覆盖层并露出生长区; 以及从缓冲层的生长区域生长半极性氮化物并覆盖覆盖层。 由此，硅衬底和半极性氮化物之间的热应力引起的裂纹减少，并且提高了半极性氮化物膜的质量。

公开(公告)号：US08406579B2

公开(公告)日：2013-03-26

申请号：US13038553

申请日：2011-03-02

Applicant: Hung-Chih Lu ,  Jen-Inn Chyi

Inventor： Hung-Chih Lu ,  Jen-Inn Chyi

IPC: G02F1/295 ,  G02B6/34

CPC classification number: G02F1/3133 ,  G02F2001/311 ,  G02F2203/585

Abstract: A wavelength division multiplexing and optical modulation apparatus includes at least two modulation region-added grating-assisted cross-state directional coupler units and a modulation region-added cross-state directional coupler. The modulation region-added grating-assisted cross-state directional coupler units and the modulation region-added cross-state directional coupler unit are connected to one another in serial. Each of the modulation region-added grating-assisted cross-state directional coupler units each includes a modulation region-added cross-state directional coupler, a grating and a modulation region. The modulation region-added cross-state directional coupler unit includes an output waveguide, an input waveguide and a modulation region.

Abstract translation: 波分复用和光调制装置包括至少两个调制区域附加的光栅辅助交叉定向耦合器单元和调制区域增加的交叉定向耦合器。 调制区域附加的光栅辅助交叉定向耦合器单元和调制区域增加的交叉定向耦合器单元彼此串联连接。 调制区域附加光栅辅助交叉定向耦合器单元中的每一个均包括调制区域增加的交叉状态定向耦合器，光栅和调制区域。 调制区域增加的交叉定向耦合器单元包括输出波导，输入波导和调制区域。

公开(公告)号：US20120276722A1

公开(公告)日：2012-11-01

申请号：US13177330

申请日：2011-07-06

Applicant: Jen-Inn CHYI ,  Hsueh-Hsing Liu ,  Hsien Yu Lin

Inventor： Jen-Inn CHYI ,  Hsueh-Hsing Liu ,  Hsien Yu Lin

IPC: H01L21/205

CPC classification number: H01L21/02639 ,  C30B23/025 ,  C30B23/04 ,  C30B25/04 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/16 ,  H01L33/20

Abstract: A method for growing a semipolar nitride comprises steps: forming a plurality of parallel discrete trenches on a silicon substrate , each discrete trenches having a first wall and a second wall, wherein a tilt angle is formed between the surface of the silicon substrate and the first wall; forming a buffer layer on the silicon substrate and the trenches, wherein the buffer layer on the first wall has a plurality of growing zones and a plurality of non-growing zones among the growing zones and complementary to the growing zones; forming a cover layer on the buffer layer and revealing the growing zones; and growing a semipolar nitride from the growing zones of the buffer layer and covering the cover layer. Thereby cracks caused by thermal stress between the silicon substrate and semipolar nitride are decreased and the quality of the semipolar nitride film is improved.

Abstract translation: 用于生长半极性氮化物的方法包括以下步骤：在硅衬底上形成多个平行的离散沟槽，每个离散的沟槽具有第一壁和第二壁，其中在硅衬底的表面和第一壁之间形成倾斜角 壁; 在所述硅衬底和所述沟槽上形成缓冲层，其中所述第一壁上的所述缓冲层在所述生长区中具有多个生长区和多个非生长区，并与所述生长区互补; 在缓冲层上形成覆盖层并露出生长区; 以及从缓冲层的生长区域生长半极性氮化物并覆盖覆盖层。 由此，硅衬底和半极性氮化物之间的热应力引起的裂纹减少，并且提高了半极性氮化物膜的质量。

公开(公告)号：US20090298213A1

公开(公告)日：2009-12-03

申请号：US12538427

申请日：2009-08-10

Applicant: Chia-Ming LEE ,  Hung-Cheng Lin ,  Jen-Inn Chyi

Inventor： Chia-Ming LEE ,  Hung-Cheng Lin ,  Jen-Inn Chyi

IPC: H01L33/00

CPC classification number: H01L33/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02647 ,  H01L21/02658 ,  H01L33/22

Abstract: The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer. Next, the substrate is etched to form a plurality of concave zones and a plurality of convex zones with the chemical reaction layer overhead. Next, the chemical reaction layer is removed to form an irregular geometry of the concave zones and convex zones on the surface of the substrate. Then, a semiconductor light emitting structure is epitaxially formed on the surface of the substrate. Thereby, the present invention can achieve a light emitting diode structure having improved internal and external quantum efficiencies.

公开(公告)号：US20090162999A1

公开(公告)日：2009-06-25

申请号：US12014200

申请日：2008-01-15

Applicant: Hung-Cheng LIN ,  Jen-Inn Chyi

Inventor： Hung-Cheng LIN ,  Jen-Inn Chyi

IPC: H01L21/36

CPC classification number: H01L21/0262 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/0062 ,  H01L33/06

Abstract: A method of growing nitride semiconductor material and particularly a method of growing Indium nitride is disclosed can increase surface flatness of a nitride semiconductor material and decrease density of V-defects therein. Further, the method can increase light emission efficiency of a quantum well or quantum dots of the produced LED as well as greatly increase yield. The method is also applicable to the fabrications of electronic devices made of nitride semiconductor material and diodes of high breakdown voltage for rectification. The method can greatly increase surface flatness of semiconductor material for HBT, thereby increasing quality of the produced semiconductor devices.

Abstract translation: 公开了一种生长氮化物半导体材料的方法，特别是生长氮化铟的方法可以增加氮化物半导体材料的表面平坦度并降低其中的V型缺陷的密度。 此外，该方法可以提高所产生的LED的量子阱或量子点的发光效率，并且大大提高产量。 该方法还适用于由氮化物半导体材料制成的电子器件和用于整流的高击穿电压的二极管的制造。 该方法可以大大增加用于HBT的半导体材料的表面平坦度，从而提高所制造的半导体器件的质量。