Abstract:
An enclosure for an energy storage device is presently disclosed. The enclosure includes a cell housing having a base portion and at least one side portion seamlessly extending from the base portion to define a volume and having a peripheral edge defining an aperture distal from the base portion through which an electrochemical cell may be disposed within the volume, and a cover securable to the peripheral edge of the housing, where the housing and cover are configured to house at least one electrochemical cell at an operating temperature greater than about 100 degrees Celsius. The enclosure may also include an environmental housing configured to nestingly receive the cell housing, and an insulating element disposed between the environmental housing and the cell housing. Also disclosed is a method of packaging the energy storage device utilizing the enclosure.
Abstract:
An electronic assembly includes one or more conductive clamps (302, 304, FIG. 3), which are used to supply current to an integrated circuit (IC) package (308). The conductive clamps are attached to a printed circuit (PC) board (312), which supplies the current to the IC package over one clamp, and receives returned current from the IC package over another clamp. Each clamp contacts a contact pad (330) on the surface of the PC board, and contacts another contact pad (334) on the top surface of the IC package. Vias (338, 339) and conductive planes (340, 342) within the package then carry current to and from an IC (e.g., IC 306) connected to the package. In another embodiment, the clamp (904, FIG. 9) holds a conductive structure (902) in place between the PC board contact pad (908) and the IC package contact pad (914), and current is carried primarily over the conductive structure, rather than over the clamp.
Abstract:
A method for bonding a semiconductor die to a substrate is described. The method comprises arranging a semiconductor die, an interconnect, and a substrate in a suitable configuration and using induction heating to form the bond.
Abstract:
Two types of thermal management devices for efficiently dissipating heat generated by high performance electronic devices, such as microprocessors for desktop and server computers producing a power of near 200 Watts and high power electronic devices that are small and thin, such as those used in telephones, radios, laptop computers, and handheld devices. An integrated heat sink and spreader for cooling an item has a vapor chamber heat sink with a thinner first wall and a thicker second wall. The thicker second wall is engageable with the item in efficient heat transferring relationship. A plurality of heat-radiating fins are attached to the thinner first wall. An embedded direct heat pipe attachment includes a heat pipe embedded in a spreader plate that is in direct heat transferring contact with an item through a thin, uniform layer of thermal interface material.
Abstract:
Methods and systems for attaching a chip to a next level package by directing radiant energy at the chip back side while substantially preventing irradiation of the next level package are described.
Abstract:
A heat spreader and stiffener device has a stiffener portion extending towards a center of the heat spreader and stiffener device and mountable to a die-side surface of a substrate.
Abstract:
A method for fabricating a socket (300, FIG. 3) includes fabricating a conductive structure (310, FIG. 3) and embedding the conductive structure in a housing (302). The housing includes multiple openings (304) formed in the top surface. Each opening (304) provides access to conductive contacts (502, FIG. 5), which provide an electrical interface between a device that is inserted into the socket and the next level of interconnect (e.g., a PC board). In one embodiment, the embedded conductive structure (310) is electrically connected to one or more ground conducting contacts (708, FIG. 7B). The conductive structure includes column walls (312), which run in parallel with columns of contacts, and row walls (314), which run in parallel with rows of contacts and which intersect the column walls. In this manner, the conductive structure forms multiple chambers (402, FIG. 4).
Abstract:
A socket for a microelectronic component is provided. The socket has a base with metal power and ground layers, and further includes a plurality of electrically conductive socket members, some of which are connected in parallel to the metal power layer, others being connected in parallel to the metal ground layer, while others are insulated from both the metal power and ground layers for purposes of providing signals. Each electrically conductive socket member has a protrusion that breaks through an inner insulating layer that defines an opening into which the electrically conductive socket member is inserted. The protrusions are at different heights, so that some of the protrusions make contact with the metal power layer, while others are connected to the metal ground layer or to a dielectric core layer.