MICROCRYSTALLINE SILICON DEPOSITION FOR THIN FILM SOLAR APPLICATIONS
    12.
    发明申请
    MICROCRYSTALLINE SILICON DEPOSITION FOR THIN FILM SOLAR APPLICATIONS 失效
    薄膜太阳能应用的微晶硅沉积

    公开(公告)号:US20090263930A1

    公开(公告)日:2009-10-22

    申请号:US12493020

    申请日:2009-06-26

    IPC分类号: H01L31/18 H01L31/0376

    摘要: Embodiments of the invention as recited in the claims relate to thin film multi-junction solar cells and methods and apparatuses for forming the same. In one embodiment a method of forming a thin film multi-junction solar cell over a substrate is provided. The method comprises positioning a substrate in a reaction zone, providing a gas mixture to the reaction zone, wherein the gas mixture comprises a silicon containing compound and hydrogen gas, forming a first region of an intrinsic type microcrystalline silicon layer on the substrate at a first deposition rate, forming a second region of the intrinsic type microcrystalline silicon layer on the substrate at a second deposition rate higher than the first deposition rate, and forming a third region of the intrinsic type microcrystalline silicon layer on the substrate at a third deposition rate lower than the second deposition rate.

    摘要翻译: 权利要求中所述的本发明的实施例涉及薄膜多结太阳能电池及其形成方法和装置。 在一个实施例中,提供了一种在衬底上形成薄膜多结太阳能电池的方法。 该方法包括将基底定位在反应区中,向反应区提供气体混合物,其中气体混合物包含含硅化合物和氢气,在第一个衬底上形成本征型微晶硅层的第一区域 沉积速率,以高于第一沉积速率的第二沉积速率在衬底上形成本征型微晶硅层的第二区域,以及在第三沉积速率下在衬底上形成本征型微晶硅层的第三区域 比第二沉积速率。

    METHODS OF MANUFACTURING BACK SURFACE FIELD AND METALLIZED CONTACTS ON A SOLAR CELL DEVICE
    14.
    发明申请
    METHODS OF MANUFACTURING BACK SURFACE FIELD AND METALLIZED CONTACTS ON A SOLAR CELL DEVICE 审中-公开
    在太阳能电池装置上制造背面和金属化接触的方法

    公开(公告)号:US20130199606A1

    公开(公告)日:2013-08-08

    申请号:US13366817

    申请日:2012-02-06

    IPC分类号: H01L31/0224 H01L31/18

    摘要: Embodiments of the present invention are directed to a process for making solar cells. In one embodiment, a method of manufacturing a solar cell device, includes providing a substrate having a first surface and a second surface, selectively disposing a first metal paste in a first pattern on the first surface of the substrate, forming a first dielectric layer over the first metal paste on the first surface of the substrate, forming a second metal paste in a second pattern over the first dielectric layer align with the first metal paste, and simultaneously heating the first and the second metal pastes disposed on the first surface of the substrate to form a first group of contacts on the first surface of the substrate, wherein at least a portion of the second metal paste forms the first group of contacts that each extend through the first dielectric layer to connect with the first metal paste to the first surface of the substrate.

    摘要翻译: 本发明的实施例涉及制造太阳能电池的方法。 在一个实施例中,制造太阳能电池器件的方法包括提供具有第一表面和第二表面的衬底,在衬底的第一表面上选择性地将第一金属膏以第一图案布置,形成第一介电层, 在第一介电层上形成第二图案的第二金属膏与第一金属膏对准,同时加热设置在第一金属膏的第一表面上的第一和第二金属浆料, 衬底,以在衬底的第一表面上形成第一组触点,其中第二金属膏的至少一部分形成第一组触点,每组触点延伸穿过第一电介质层,以将第一金属膏连接到第一组 基板的表面。

    ROUGHNESS CONTROL OF A WAVELENGTH SELECTIVE REFLECTOR LAYER FOR THIN FILM SOLAR APPLICATIONS
    15.
    发明申请
    ROUGHNESS CONTROL OF A WAVELENGTH SELECTIVE REFLECTOR LAYER FOR THIN FILM SOLAR APPLICATIONS 审中-公开
    用于薄膜太阳能应用的波长选择反射器层的粗糙度控制

    公开(公告)号:US20110120536A1

    公开(公告)日:2011-05-26

    申请号:US12623277

    申请日:2009-11-20

    IPC分类号: H01L31/0236 H01L31/18

    摘要: A method and apparatus for forming a roughened wavelength selective reflector layer are provided. In one embodiment, a method of forming a solar cell device includes forming a wavelength selective reflector layer between a first p-i-n junction and a second p-i-n junction formed on a substrate, and performing a post treatment process on the wavelength selective reflector layer to form the uneven surface with the roughness greater than 20 nm. In another embodiment, a photovoltaic device includes a wavelength selective reflector layer disposed between a first p-i-n junction and a second p-i-n junction formed on a substrate, wherein the wavelength selective reflector layer has an uneven surface having a surface roughness greater than 20 nm.

    摘要翻译: 提供了形成粗糙波长选择反射层的方法和装置。 在一个实施例中,形成太阳能电池器件的方法包括在形成在衬底上的第一pin结和第二pin结之间形成波长选择性反射层,并对波长选择反射层进行后处理,以形成不均匀的 表面粗糙度大于20nm。 在另一个实施例中,光伏器件包括设置在形成在衬底上的第一p-i-n结和第二p-i-n结之间的波长选择反射层,其中波长选择反射层具有表面粗糙度大于20nm的不平坦表面。

    GAS MIXING METHOD REALIZED BY BACK DIFFUSION IN A PECVD SYSTEM WITH SHOWERHEAD
    16.
    发明申请
    GAS MIXING METHOD REALIZED BY BACK DIFFUSION IN A PECVD SYSTEM WITH SHOWERHEAD 有权
    在具有淋浴的PECVD系统中通过反扩散实现的气体混合方法

    公开(公告)号:US20110053356A1

    公开(公告)日:2011-03-03

    申请号:US12553007

    申请日:2009-09-02

    IPC分类号: H01L21/205

    摘要: Embodiments of the present invention generally relate to methods of forming a microcrystalline silicon layer on a substrate in a deposition chamber. In, one embodiment, the method includes flowing a processing gas into a diffuser region between a backing plate and a showerhead of the deposition chamber, flowing the processing gas through a plurality of holes in the showerhead and into a process volume between the showerhead and a substrate support in the deposition chamber, igniting a plasma in the process volume, back-flowing gas ions formed in the plasma through the plurality of holes in the showerhead and into the diffuser region, mixing the gas ions and the processing gas in the diffuser region, re-flowing the gas ions and processing gas through the plurality of holes in the showerhead and into the process volume, and depositing a microcrystalline silicon layer on the substrate.

    摘要翻译: 本发明的实施方案一般涉及在沉积室中的衬底上形成微晶硅层的方法。 在一个实施例中,该方法包括将处理气体流入到沉积室的背板和喷头之间的扩散器区域中,使处理气体通过喷头中的多个孔流入喷头和喷淋头之间的过程体积 在沉积室中的基板支撑件,点燃处理体积中的等离子体,在等离子体中形成的回流气体离子通过喷头中的多个孔并进入扩散器区域,将气体离子和处理气体混合在扩散器区域 使气体离子和处理气体再次流过喷头中的多个孔并进入处理体积,并在基底上沉积微晶硅层。

    METHODS FOR FORMING A PHOTOVOLTAIC DEVICE WITH LOW CONTACT RESISTANCE
    19.
    发明申请
    METHODS FOR FORMING A PHOTOVOLTAIC DEVICE WITH LOW CONTACT RESISTANCE 审中-公开
    用于形成具有低接触电阻的光伏器件的方法

    公开(公告)号:US20080245414A1

    公开(公告)日:2008-10-09

    申请号:US11733184

    申请日:2007-04-09

    IPC分类号: H01L31/00

    摘要: An improved PV solar cell structure and methods for manufacturing the same are provided. In one embodiment, a photovoltaic device includes a first photoelectric conversion unit, a first transparent conductive oxide layer and a first microcrystalline silicon layer disposed between and in contact with the photoelectric conversion unit and the transparent conductive oxide layer. In another embodiment, a method of forming a photovoltaic solar cell includes providing a substrate having a first transparent conductive oxide layer disposed thereon, depositing a first microcrystalline silicon layer on the transparent conductive oxide layer, and forming a first photoelectric conversion unit on the microcrystalline silicon layer.

    摘要翻译: 提供了一种改进的PV太阳能电池结构及其制造方法。 在一个实施例中,光伏器件包括第一光电转换单元,第一透明导电氧化物层和设置在光电转换单元和透明导电氧化物层之间并与之接触的第一微晶硅层。 在另一实施例中,形成光伏太阳能电池的方法包括提供一个其上设置有第一透明导电氧化物层的衬底,在透明导电氧化物层上沉积第一微晶硅层,以及在微晶硅上形成第一光电转换单元 层。