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11.
公开(公告)号:US12000063B2
公开(公告)日:2024-06-04
申请号:US17173170
申请日:2021-02-10
Applicant: SLT Technologies, Inc
Inventor: Drew W. Cardwell , Mark P. D'Evelyn
CPC classification number: C30B25/18 , C01B21/0632 , C30B25/04 , C30B29/406
Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.
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12.
公开(公告)号:US20230167586A1
公开(公告)日:2023-06-01
申请号:US18072684
申请日:2022-11-30
Applicant: SLT Technologies, Inc.
Inventor: Mark P. D'EVELYN , Keiji FUKUTOMI , Drew W. CARDWELL , David N. ITALIANO , Chiaki DOMOTO
IPC: C30B29/40
CPC classification number: C30B29/406 , C30B7/105
Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for substrates with a controlled oxygen gradient using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.
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13.
公开(公告)号:US20230111390A1
公开(公告)日:2023-04-13
申请号:US17963910
申请日:2022-10-11
Applicant: SLT Technologies, Inc.
Inventor: Mark P. D'EVELYN , David N. ITALIANO
IPC: C04B35/581 , C04B35/65 , C04B35/645 , C04B35/626 , C09K11/02 , C09K11/77
Abstract: Embodiments of disclosure may provide a method for forming an aluminum-containing nitride ceramic matrix composite, comprising heating a green body, an aluminum-containing composition, ammonia and a mineralizer composition in a sealable container to a temperature between about 400 degrees Celsius and about 800 degrees Celsius and a pressure between about 10 MPa and about 1000 MPa, to form an aluminum-containing nitride ceramic matrix composite characterized by a phosphor-to-aluminum nitride (AlN) ratio, by volume, between about 1% and about 99%, by a porosity between about 1% and about 50%, and by a thermal conductivity between about 1 watt per meter-Kelvin and about 320 watts per meter-Kelvin. The green body comprises a phosphor powder comprising at least one phosphor composition, wherein the phosphor powder particles are characterized by a D50 diameter between about 100 nanometers and about 500 micrometers, and the green body has a porosity between about 10% and about 80%. The aluminum-containing composition has a purity, on a metals basis, between about 90% and about 99.9999%. The fraction of free volume within the sealable container contains between about 10% and about 95% of liquid ammonia prior to heating the green body, the aluminum-containing composition, ammonia and the mineralizer composition in the sealable container.
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公开(公告)号:US11569398B2
公开(公告)日:2023-01-31
申请号:US17151109
申请日:2021-01-15
Applicant: SLT Technologies, Inc
Inventor: Drew W. Cardwell , Mark P. D'Evelyn
IPC: H01L31/0232 , H01L31/0216 , H01L31/0224 , H01L31/0304 , G02B6/42 , H01L31/036 , H01L31/109 , H01L31/18 , H01L31/0352
Abstract: According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.
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公开(公告)号:US20210167231A1
公开(公告)日:2021-06-03
申请号:US17151109
申请日:2021-01-15
Applicant: SLT Technologies, Inc
Inventor: Drew W. CARDWELL , Mark P. D'EVELYN
IPC: H01L31/0232 , H01L31/0216 , H01L31/0224 , H01L31/0304 , H01L31/0352 , H01L31/036 , H01L31/109 , H01L31/18 , G02B6/42
Abstract: According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.
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公开(公告)号:US20210020798A1
公开(公告)日:2021-01-21
申请号:US16930250
申请日:2020-07-15
Applicant: SLT Technologies, Inc
Inventor: Drew W. CARDWELL , Mark P. D'EVELYN
IPC: H01L31/036 , H01L31/0304 , H01L31/0224 , H01L31/0232 , H01L31/18 , H01L31/105
Abstract: According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.
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17.
公开(公告)号:US10301745B2
公开(公告)日:2019-05-28
申请号:US15226552
申请日:2016-08-02
Applicant: SLT TECHNOLOGIES, INC.
Inventor: Mark P. D'Evelyn , Dirk Ehrentraut , Wenkan Jiang , Bradley C. Downey
IPC: C30B33/00 , C30B33/06 , C30B29/40 , C30B25/18 , C30B25/02 , C30B7/10 , C30B25/20 , H01L29/04 , H01L29/20 , H01L31/0304 , H01L33/32 , H01S5/32 , H01S5/323
Abstract: An ultralow defect gallium-containing nitride crystal and methods of making ultralow defect gallium-containing nitride crystals are disclosed. The crystals are useful as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and photoelectrochemical water splitting for hydrogen generators.
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18.
公开(公告)号:US20190003078A1
公开(公告)日:2019-01-03
申请号:US16019528
申请日:2018-06-26
Applicant: SLT Technologies, Inc
Inventor: Mark P. D'EVELYN , Dirk EHRENTRAUT , Derrick S. KAMBER , Bradley C. DOWNEY
Abstract: Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.
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公开(公告)号:US10036099B2
公开(公告)日:2018-07-31
申请号:US14599335
申请日:2015-01-16
Applicant: SLT TECHNOLOGIES, INC.
Inventor: Mark P. D'Evelyn , Dirk Ehrentraut , Derrick S. Kamber , Bradley C. Downey
CPC classification number: C30B7/105 , B01J3/008 , B01J3/042 , B01J3/065 , B01J2203/0665 , B01J2203/068 , B30B11/002 , C30B29/406 , H01L21/02035 , H01L21/02389
Abstract: Large-scale manufacturing of gallium nitride boules using m-plane or wedge-shaped seed crystals can be accomplished using ammonothermal growth methods. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and crystals are grown ammonothermally. The orientation of the m-plane or wedge-shaped seed crystals are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus.
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20.
公开(公告)号:US20250066256A1
公开(公告)日:2025-02-27
申请号:US18947952
申请日:2024-11-14
Applicant: SLT Technologies, Inc.
Inventor: Mark P. D'EVELYN , David N. ITALIANO
IPC: C04B35/581 , B28B1/30 , B28B3/02 , C04B35/626 , C04B35/645 , C04B35/65 , C09K11/02 , C09K11/77
Abstract: Embodiments of disclosure may provide a method for forming an aluminum-containing nitride ceramic matrix composite, comprising heating a green body, an aluminum-containing composition, ammonia and a mineralizer composition in a sealable container to a temperature between about 400 degrees Celsius and about 800 degrees Celsius and a pressure between about 10 MPa and about 1000 MPa, to form an aluminum-containing nitride ceramic matrix composite characterized by a phosphor-to-aluminum nitride (AlN) ratio, by volume, between about 1% and about 99%, by a porosity between about 1% and about 50%, and by a thermal conductivity between about 1 watt per meter-Kelvin and about 320 watts per meter-Kelvin. The green body comprises a phosphor powder comprising at least one phosphor composition, wherein the phosphor powder particles are characterized by a D50 diameter between about 100 nanometers and about 500 micrometers, and the green body has a porosity between about 10% and about 80%. The aluminum-containing composition has a purity, on a metals basis, between about 90% and about 99.9999%. The fraction of free volume within the sealable container contains between about 10% and about 95% of liquid ammonia prior to heating the green body, the aluminum-containing composition, ammonia and the mineralizer composition in the sealable container.
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