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    Fabricating arrays of metallic nanostructures
    11.
    发明授权
    Fabricating arrays of metallic nanostructures 失效
    制造金属纳米结构阵列

    公开(公告)号：US07592255B2

    公开(公告)日：2009-09-22

    申请号：US11021615

    申请日：2004-12-22

    Applicant: Philip J Kuekes ,  M. Saif Islam ,  Shih-Yuan Wang ,  Alexandre M. Bratkovski

    Inventor： Philip J Kuekes ,  M. Saif Islam ,  Shih-Yuan Wang ,  Alexandre M. Bratkovski

    IPC: H01L21/44

    CPC classification number: G02B6/107 ,  B82Y30/00 ,  Y10S977/712 ,  Y10S977/762 ,  Y10T29/41

    Abstract: A patterned array of metallic nanostructures and fabrication thereof is described. A plurality of nanowires is grown on a substrate, the plurality of nanowires being laterally arranged on the substrate in a predetermined array pattern. The plurality of nanowires is coated with a metal to generate a plurality of metal-coated nanowires. Vacancies between the metal-coated nanowires are filled in with a sacrificial material for stabilization, and the metal-coated nanowires are planarized. The sacrificial material is removed, the patterned array of metallic nanostructures being formed by the plurality of planarized metal-coated nanowires.

    Abstract translation: 描述了金属纳米结构的图案阵列及其制造。 多个纳米线在衬底上生长，多个纳米线以预定的阵列图案横向布置在衬底上。 多个纳米线被涂覆有金属以产生多个金属涂覆的纳米线。 金属涂覆的纳米线之间的空位填充有用于稳定化的牺牲材料，并且金属涂覆的纳米线被平坦化。 去除牺牲材料，金属纳米结构的图案化阵列由多个平坦化的金属涂覆的纳米线形成。

    Methods of bridging lateral nanowires and device using same
    12.
    发明授权
    Methods of bridging lateral nanowires and device using same 失效
    桥接横向纳米线的方法及其使用方法

    公开(公告)号：US07208094B2

    公开(公告)日：2007-04-24

    申请号：US10738176

    申请日：2003-12-17

    Applicant: M. Saif Islam ,  Theodore I. Kamins ,  Shashank Sharma

    Inventor： M. Saif Islam ,  Theodore I. Kamins ,  Shashank Sharma

    IPC: C23F1/00 ,  H01L21/00

    CPC classification number: G11C13/025 ,  B82Y10/00 ,  B82Y30/00 ,  G11C2213/16 ,  G11C2213/17 ,  H01L21/76838 ,  H01L23/53271 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10S977/721 ,  Y10S977/742 ,  H01L2924/00

    Abstract: A semiconductor nanowire is grown laterally. A method of growing the nanowire forms a vertical surface on a substrate, and activates the vertical surface with a nanoparticle catalyst. A method of laterally bridging the nanowire grows the nanowire from the activated vertical surface to connect to an opposite vertical surface on the substrate. A method of connecting electrodes of a semiconductor device grows the nanowire from an activated device electrode to an opposing device electrode. A method of bridging semiconductor nanowires grows nanowires between an electrode pair in opposing lateral directions. A method of self-assembling the nanowire bridges the nanowire between an activated electrode pair. A method of controlling nanowire growth forms a surface irregularity in the vertical surface. An electronic device includes a laterally grown nano-scale interconnection.

    Abstract translation: 半导体纳米线横向生长。 生长纳米线的方法在衬底上形成垂直表面，并用纳米颗粒催化剂激活垂直表面。 横向桥接纳米线的方法从激活的垂直表面生长纳米线，以连接到衬底上的相对的垂直表面。 连接半导体器件的电极的方法将纳米线从激活的器件电极生长到相对的器件电极。 桥接半导体纳米线的方法在相对的横向方向上的电极对之间生长纳米线。 自组装纳米线的方法在激活的电极对之间桥接纳米线。 控制纳米线生长的方法在垂直表面形成表面不规则性。 电子设备包括横向生长的纳米级互连。

    Apparatus for imprinting lithography and fabrication thereof
    14.
    发明授权
    Apparatus for imprinting lithography and fabrication thereof 失效
    用于压印光刻及其制造的装置

    公开(公告)号：US07141866B1

    公开(公告)日：2006-11-28

    申请号：US10826056

    申请日：2004-04-16

    Applicant: M. Saif Islam ,  Gun Young Jung ,  Yong Chen ,  R. Stanley Williams

    Inventor： M. Saif Islam ,  Gun Young Jung ,  Yong Chen ,  R. Stanley Williams

    IPC: H01L29/04 ,  H01L31/036

    CPC classification number: H01L21/76838 ,  H01L21/0337

    Abstract: An imprinting apparatus and method of fabrication provide a mold having a pattern for imprinting. The apparatus includes a semiconductor substrate polished in a [110] direction. The semiconductor substrate has a (110) horizontal planar surface and vertical sidewalls of a wet chemical etched trench. The sidewalls are aligned with and therefore are (111) vertical lattice planes of the semiconductor substrate. The semiconductor substrate includes a plurality of vertical structures between the sidewalls, wherein the vertical structures may be nano-scale spaced apart. The method includes wet etching a trench with spaced apart (111) vertical sidewalls in an exposed portion of the (110) horizontal surface of the semiconductor substrate along (111) vertical lattice planes. A chemical etching solution is used that etches the (111) vertical lattice planes slower than the (110) horizontal lattice plane. The method further includes forming the imprinting mold.

    Abstract translation: 压印装置和制造方法提供具有用于压印的图案的模具。 该装置包括沿[110]方向抛光的半导体衬底。 半导体衬底具有（110）水平平面和湿化学蚀刻沟槽的垂直侧壁。 侧壁与半导体衬底对准并且因此是（111）垂直的晶格面。 半导体衬底包括在侧壁之间的多个垂直结构，其中垂直结构可以是纳米级隔开的。 该方法包括在（111）垂直晶格面的半导体衬底的（110）水平表面的暴露部分中湿式蚀刻具有间隔开（111）垂直侧壁的沟槽。 使用蚀刻比（110）水平晶格面慢的（111）垂直晶格面的化学蚀刻溶液。 该方法还包括形成压印模具。

    Semiconductor optical amplifier using laser cavity energy to amplify signal and method of fabrication thereof
    15.
    发明申请
    Semiconductor optical amplifier using laser cavity energy to amplify signal and method of fabrication thereof 失效
    使用激光腔能量放大信号的半导体光放大器及其制造方法

    公开(公告)号：US20050111079A1

    公开(公告)日：2005-05-26

    申请号：US11024319

    申请日：2004-12-27

    Applicant: Shih-Yuan Wang ,  Miao Zhu ,  Zuhua Zhu ,  Haiqing Wei ,  Saif Islam

    Inventor： Shih-Yuan Wang ,  Miao Zhu ,  Zuhua Zhu ,  Haiqing Wei ,  Saif Islam

    IPC: H01S5/34 ,  H01S5/50 ,  H01S3/00

    CPC classification number: B82Y20/00 ,  H01S5/3413 ,  H01S5/50 ,  H01S5/5027 ,  H01S5/5063 ,  H01S5/5072 ,  H01S2301/02

    Abstract: A semiconductor optical amplifier (SOA) apparatus and related methods are described. The SOA comprises a signal waveguide for guiding an optical signal along a signal path, and further comprises one or more laser cavities having a gain medium lying outside the signal waveguide, the gain medium being sufficiently close to the signal waveguide such that, when the gain medium is pumped with an excitation current, the optical signal traveling down the signal waveguide is amplified by an evanescent coupling effect with the laser cavity. When the gain medium is sufficiently pumped to cause lasing action in the laser cavity, gain-clamped amplification of the optical signal is achieved. Additional features relating to segmented laser cavities, separate pumping of laser cavity segments, DFB/DBR gratings, current profiling to improve ASE noise performance, coupled-cavity lasers, avoidance of injection locking effects, manipulation of gain curve peaks, integration with a tunable vertical cavity coupler, integration with a photodetector, integration with an RZ signal modulator, and other described features may be used with the evanescent coupling case or with an SOA having a laser cavity gain medium that is coextensive with the gain medium of the signal waveguide.

    Abstract translation: 描述了一种半导体光放大器（SOA）装置及相关方法。 SOA包括用于沿着信号路径引导光信号的信号波导，并且还包括一个或多个具有位于信号波导外部的增益介质的激光腔，增益介质足够靠近信号波导，使得当增益 介质用激励电流泵浦，沿信号波导下行的光信号通过与激光腔的ev逝耦合效应放大。 当增益介质被充分泵送以在激光腔中引起激光作用时，实现光信号的增益钳位放大。 与分段激光腔相关的附加特征，激光腔段的独立泵浦，DFB / DBR光栅，电流分析以改善ASE噪声性能，耦合腔激光器，避免注入锁定效应，操纵增益曲线峰值，与可调谐垂直线 空腔耦合器，与光电检测器的集成，与RZ信号调制器的集成以及其它所描述的特征可以与ev逝耦合壳体或具有与信号波导的增益介质共同延伸的激光腔增益介质的SOA一起使用。

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