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    Semiconductor light emitting device
    11.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US08674338B2

    公开(公告)日：2014-03-18

    申请号：US12871285

    申请日：2010-08-30

    Applicant: Koichi Tachibana ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Hajime Nago ,  Shinya Nunoue

    Inventor： Koichi Tachibana ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Hajime Nago ,  Shinya Nunoue

    IPC: H01L29/06 ,  H01L31/00

    CPC classification number: H01L33/06 ,  H01L33/32 ,  H01L33/325

    Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting portion. The light emitting portion is provided between the semiconductor layers and includes barrier layers and well layers alternately stacked. An n-side end well layer which is closest to the n-type semiconductor layer contains InwnGa1-wnN and has a layer thickness twn. An n-side end barrier layer which is closest to the n-type semiconductor layer contains InbnGa1-bnN and has a layer thickness tbn. A p-side end well layer which is closest to the p-type semiconductor layer contains InwpGa1-wpN and has a layer thickness twp. A p-side end barrier layer which is closest to the p-type semiconductor contains InbpGa1-bpN and has a layer thickness tbp. A value of (wp×twp+bp×tbp)/(twp+tbp) is higher than (wn×twn+bn×tbn)/(twn+tbn) and is not higher than 5 times (wn×twn+bn×tbn)/(twn+tbn).

    Abstract translation: 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光部分。 发光部分设置在半导体层之间，并且包括交替堆叠的势垒层和阱层。 最靠近n型半导体层的n侧端阱层包含InwnGa1-wnN并具有层厚度twn。 最靠近n型半导体层的n侧端势垒层包含InbnGa1-bnN并具有层厚度tbn。 最靠近p型半导体层的p侧端阱层包含InwpGa1-wpN，并具有层厚度twp。 最靠近p型半导体的p侧端势垒层包含InbpGa1-bpN，并具有层厚度tbp。 （wp×twp + bp×tbp）/（twp + tbp）的值高于（wn×twn + bn×tbn）/（twn + tbn），并且不高于5次（wn×twn + bn× tbn）/（twn + tbn）。

    Semiconductor light emitting device
    13.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US08643044B2

    公开(公告)日：2014-02-04

    申请号：US13222912

    申请日：2011-08-31

    Applicant: Koichi Tachibana ,  Shigeya Kimura ,  Toshiki Hikosaka ,  Taisuke Sato ,  Toshiyuki Oka ,  Shinya Nunoue

    Inventor： Koichi Tachibana ,  Shigeya Kimura ,  Toshiki Hikosaka ,  Taisuke Sato ,  Toshiyuki Oka ,  Shinya Nunoue

    IPC: H01L33/00

    CPC classification number: H01L33/42

    Abstract: According to one embodiment, a semiconductor light emitting device includes: a stacked structure body, first and second electrodes, and a pad layer. The body includes first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of second conductivity type. The first semiconductor layer has first and second portions. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode is provided on the first portion. The second electrode is provided on the second semiconductor layer and is transmittable to light emitted from the light emitting layer. The pad layer is connected to the second electrode. A transmittance of the pad layer is lower than that of the second electrode. A sheet resistance of the second electrode increases continuously along a direction from the pad layer toward the first electrode.

    Abstract translation: 根据一个实施例，半导体发光器件包括：堆叠结构体，第一和第二电极以及衬垫层。 主体包括第一导电类型的第一半导体层，发光层和第二导电类型的第二半导体层。 第一半导体层具有第一和第二部分。 发光层设置在第二部分上。 第二半导体层设置在发光层上。 第一电极设置在第一部分上。 第二电极设置在第二半导体层上，并且可透射到从发光层发射的光。 焊盘层连接到第二电极。 焊盘层的透射率低于第二电极的透射率。 第二电极的薄层电阻沿着从衬垫层向第一电极的方向连续地增加。

    METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT
    15.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权
    制造半导体发光元件的方法

    公开(公告)号：US20130244360A1

    公开(公告)日：2013-09-19

    申请号：US13601231

    申请日：2012-08-31

    Applicant: Taisuke SATO ,  Kotaro Zaima ,  Jumpei Tajima ,  Naoharu Sugiyama ,  Shinya Nunoue

    Inventor： Taisuke SATO ,  Kotaro Zaima ,  Jumpei Tajima ,  Naoharu Sugiyama ,  Shinya Nunoue

    IPC: H01L33/12

    CPC classification number: H01L33/12 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/24

    Abstract: According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting element. The method can include bonding a stacked main body of a structural body to a substrate main body. The structural body includes a growth substrate and the stacked main body provided on the growth substrate. The stacked main body includes a first nitride semiconductor film, a light emitting film provided on the first nitride semiconductor film, and a second nitride semiconductor film provided on the light emitting film. The method can include removing the growth substrate. The method can include forming a plurality of stacked bodies. The method can include forming an uneven portion in a surface of a first nitride semiconductor layer. The method can include forming a plurality of the semiconductor light emitting elements.

    Abstract translation: 根据一个实施例，公开了一种用于制造半导体发光元件的方法。 该方法可以包括将结构体的层叠主体接合到基板主体。 结构体包括生长衬底和设置在生长衬底上的层叠主体。 堆叠主体包括第一氮化物半导体膜，设置在第一氮化物半导体膜上的发光膜和设置在发光膜上的第二氮化物半导体膜。 该方法可以包括去除生长底物。 该方法可以包括形成多个堆叠体。 该方法可以包括在第一氮化物半导体层的表面中形成不均匀部分。 该方法可以包括形成多个半导体发光元件。

    Liquid crystal display device
    17.
    发明授权
    Liquid crystal display device 失效
    液晶显示装置

    公开(公告)号：US08520167B2

    公开(公告)日：2013-08-27

    申请号：US13038728

    申请日：2011-03-02

    Applicant: Shinji Saito ,  Yasushi Hattori ,  Shinya Nunoue

    Inventor： Shinji Saito ,  Yasushi Hattori ,  Shinya Nunoue

    IPC: G02F1/1335 ,  F21V7/00 ,  F21V11/00

    CPC classification number: G02B6/0055 ,  G02B5/0215 ,  G02B5/0231 ,  G02B5/0284 ,  G02B6/0096 ,  G02F1/133606 ,  G02F1/133615

    Abstract: A liquid crystal display device of an embodiment has: a semiconductor laser diode emitting a first laser beam; a first reflecting unit configured to reflect the first laser beam and form a second laser beam having a one-dimensionally spread distribution; and a second reflecting unit configured to reflect the second laser beam and form a third laser beam having a two-dimensionally spread distribution. The device also has: an optical switch using liquid crystal, the optical switch being configured to control passage and blocking of the third laser beam; and a first scattering unit scattering the third laser beam.

    Abstract translation: 实施例的液晶显示装置具有：发射第一激光束的半导体激光二极管; 第一反射单元，被配置为反射第一激光束并形成具有一维扩展分布的第二激光束; 以及第二反射单元，被配置为反射第二激光束并形成具有二维扩散分布的第三激光束。 该装置还具有：使用液晶的光开关，该光开关被配置为控制第三激光束的通过和阻塞; 以及散射第三激光束的第一散射单元。

    Method for manufacturing nitride semiconductor crystal layer
    18.
    发明授权
    Method for manufacturing nitride semiconductor crystal layer 有权
    氮化物半导体晶体层的制造方法

    公开(公告)号：US08476151B2

    公开(公告)日：2013-07-02

    申请号：US13037582

    申请日：2011-03-01

    Applicant: Naoharu Sugiyama ,  Tomonari Shioda ,  Shinya Nunoue

    Inventor： Naoharu Sugiyama ,  Tomonari Shioda ,  Shinya Nunoue

    IPC: H01L21/20

    CPC classification number: H01L21/36 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/7624 ,  H01L21/76243 ,  H01L29/2003 ,  H01L29/7787 ,  H01L33/0062

    Abstract: According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor crystal layer. The method can include forming the nitride semiconductor crystal layer having a first thickness on a silicon crystal layer. The silicon crystal layer is provided on a base body. The silicon crystal layer has a second thickness before the forming the nitride semiconductor crystal layer. The second thickness is thinner than the first thickness. The forming the nitride semiconductor crystal layer includes making at least a portion of the silicon crystal layer incorporated into the nitride semiconductor crystal layer to reduce a thickness of the silicon crystal layer from the second thickness.

    Abstract translation: 根据一个实施例，公开了一种用于制造氮化物半导体晶体层的方法。 该方法可以包括在硅晶体层上形成具有第一厚度的氮化物半导体晶体层。 硅晶层设置在基体上。 硅晶层在形成氮化物半导体晶体层之前具有第二厚度。 第二厚度比第一厚度薄。 形成氮化物半导体晶体层包括使至少部分掺入氮化物半导体晶体层中的硅晶体层从第二厚度减小硅晶体层的厚度。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    20.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20130126937A1

    公开(公告)日：2013-05-23

    申请号：US13718618

    申请日：2012-12-18

    Applicant: EIJI MURAMOTO ,  Shinya Nunoue

    Inventor： EIJI MURAMOTO ,  Shinya Nunoue

    IPC: H01L33/62

    CPC classification number: H01L33/06 ,  H01L33/42 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer formed between the n-type semiconductor layer and the p-type semiconductor layer, and emitting light. The device further includes a p-electrode contacting to the p-type semiconductor layer, and including a first conductive oxide layer having an oxygen content lower than 40 atomic % and a second conductive oxide layer contacting to the first conductive oxide layer and having a higher oxygen content than the oxygen content of the first conductive oxide layer. The device also includes an n-electrode connecting electrically to the n-type semiconductor layer.

    Abstract translation: 半导体发光器件包括n型半导体层，p型半导体层和形成在n型半导体层和p型半导体层之间的有源层，并且发射光。 该器件还包括与p型半导体层接触的p电极，并且包括氧含量低于40原子％的第一导电氧化物层和与第一导电氧化物层接触并具有较高的第二导电氧化物层的第二导电氧化物层 氧含量比第一导电氧化物层的氧含量高。 该器件还包括与n型半导体层电连接的n电极。

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