公开(公告)号：US20060046427A1

公开(公告)日：2006-03-02

申请号：US11213612

申请日：2005-08-26

Applicant: Nitin Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won Bang ,  Yen-Kun Wang

Inventor： Nitin Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won Bang ,  Yen-Kun Wang

IPC: H01L21/76

CPC classification number: H01L21/76837 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76224

Abstract: A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing a hydroxyl-containing precursor in the process chamber. The method also includes reacting the silicon-containing precursor, oxidizing gas and hydroxyl-containing precursor to form the dielectric material in the trench. The ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber is increased over time to alter a rate of deposition of the dielectric material.

Abstract translation: 一种用于在形成在衬底上的沟槽中形成电介质材料的化学气相沉积方法。 该方法包括将含硅前体流入容纳基底的处理室，将氧化气体流入室中，并在处理室中提供含羟基的前体。 该方法还包括使含硅前体，氧化气体和含羟基的前体反应以在沟槽中形成电介质材料。 流入室中的含硅前体与氧化气体的比例随时间增加以改变电介质材料的沉积速率。

公开(公告)号：US20050142895A1

公开(公告)日：2005-06-30

申请号：US11018381

申请日：2004-12-20

Applicant: Nitin Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won Bang ,  Yen-Kun Wang ,  Zheng Yuan

Inventor： Nitin Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won Bang ,  Yen-Kun Wang ,  Zheng Yuan

IPC: C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  C23C16/00 ,  H01L21/31 ,  H01L21/469

CPC classification number: C23C16/45512 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/52

Abstract: A method to form a silicon oxide layer, where the method includes the step of providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate, where the silicon-containing precursor is selected from TMOS, TEOS, OMTS, OMCTS, and TOMCATS. The method may also include the steps of providing a flow of an oxidizing precursor to the chamber, and causing a reaction between the silicon-containing precursor and the oxidizing precursor to form a silicon oxide layer. The method may further include varying over time a ratio of the silicon-containing precursor:oxidizing precursor flowed into the chamber to alter a rate of deposition of the silicon oxide on the substrate.

Abstract translation: 一种形成氧化硅层的方法，其中该方法包括提供含硅前体连续流入容纳衬底的室的步骤，其中含硅前体选自TMOS，TEOS，OMTS，OMCTS， 和TOMCATS。 该方法还可以包括以下步骤：向室提供氧化前体流，并使含硅前体和氧化前体之间的反应形成氧化硅层。 该方法可以进一步包括随着时间的推移改变硅含量的前体：氧化前体流入室中以改变氧化硅在衬底上的沉积速率。

公开(公告)号：US20140304021A1

公开(公告)日：2014-10-09

申请号：US14227312

申请日：2014-03-27

Applicant: Vikash Banthia ,  Vishal Banthia

Inventor： Vikash Banthia ,  Vishal Banthia

IPC: G06Q30/06 ,  G06Q10/10

CPC classification number: G06Q30/0615 ,  G06Q10/1095 ,  G06Q30/08 ,  G06Q50/22

Abstract: A method for brokering purchases of procedural services between a buyer and at least one professional service provider is a software-based system that negotiates transactions between potential clients and professional service providers by receiving, verifying, and negotiating appointment availabilities and appointment offers while providing privacy to both parties until a transaction is conducted. The system comprises the steps of receiving and indexing appointment openings from providers, receiving and indexing appointment offers from buyers, matching appointment opening with appointment offers, anonymizing appointment offers, and negotiating the exchange of personal information between both parties when a transaction is conducted, as well as provide ancillary product suggestions. The system provides functionality to match a submitted appointment offer anonymously with at least one professional service provider. Additionally, the system provides automated features that improve matching of the appointment opening and the appointment offer by user submitted parameters of system derived value optimums.

Abstract translation: 买方和至少一个专业服务提供者间接购买程序服务的方法是一种基于软件的系统，通过接收，验证和协商潜在客户和专业服务提供商之间的交易，同时提供隐私权 双方直到进行交易。 该系统包括以下步骤：接收和索引提供者的约会开放，接收和索引来自买方的约会提议，匹配约会开放与约会提议，匿名约会提供，以及在进行交易时双方交流个人信息，作为 以及提供配套产品建议。 该系统提供了与至少一个专业服务提供商匿名提交的约会提供的功能。 此外，该系统提供自动化功能，可改善用户提交的系统派生值最优参数的约会开放和约会提供的匹配。

公开(公告)号：US07939422B2

公开(公告)日：2011-05-10

申请号：US11947674

申请日：2007-11-29

Applicant: Nitin K. Ingle ,  Jing Tang ,  Yi Zheng ,  Zheng Yuan ,  Zhenbin Ge ,  Xinliang Lu ,  Chien-Teh Kao ,  Vikash Banthia ,  William H. McClintock ,  Mei Chang

Inventor： Nitin K. Ingle ,  Jing Tang ,  Yi Zheng ,  Zheng Yuan ,  Zhenbin Ge ,  Xinliang Lu ,  Chien-Teh Kao ,  Vikash Banthia ,  William H. McClintock ,  Mei Chang

IPC: H01L21/76

CPC classification number: H01L21/67253 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/76232

Abstract: A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space.

Abstract translation: 一种用于形成半导体结构的方法包括跨越衬底的表面形成多个特征，其中至少一个空间位于两个相邻特征之间。 第一电介质层形成在特征上并且在至少一个空间内。 第一介电层的一部分与衍生自第一前体和第二前体的反应物相互作用以形成第一固体产物。 第一固体产物被分解以基本上除去第一介电层的部分。 形成第二电介质层以基本上填充至少一个空间。

公开(公告)号：US20060030165A1

公开(公告)日：2006-02-09

申请号：US10990002

申请日：2004-11-16

Applicant: Nitin Ingle ,  Zheng Yuan ,  Vikash Banthia ,  Xinyun Xia ,  Hali Forstner ,  Rong Pan

Inventor： Nitin Ingle ,  Zheng Yuan ,  Vikash Banthia ,  Xinyun Xia ,  Hali Forstner ,  Rong Pan

IPC: H01L21/324

CPC classification number: H01L21/324 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/67115 ,  H01L21/76224 ,  H01L21/76283

Abstract: A method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 200° C. to about 800° C. in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen. In addition, a method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 400° C. to about 800° C. in the presence of an oxygen containing gas, purging the oxygen containing gas away from the substrate, and raising the substrate to a second temperature from about 900° C. to about 1100° C. to further anneal the substrate in an atmosphere that lacks oxygen.

Abstract translation: 一种退火包括含有电介质材料的沟槽的衬底的方法，所述方法包括在包含含氧气体的第一气氛中在大约200℃至大约800℃的第一温度下对衬底退火，以及退火衬底 在约800℃至约1400℃的第二温度下在不含氧气的第二气氛中。 另外，包括含有电介质材料的沟槽的衬底的退火方法，该方法包括在含氧气体存在下，在约400℃至约800℃的第一温度下退火衬底， 含氧气体离开衬底，并将衬底升高至约900℃至约1100℃的第二温度，以在缺氧的气氛中进一步对衬底进行退火。

公开(公告)号：US06843882B2

公开(公告)日：2005-01-18

申请号：US10263556

申请日：2002-10-02

Applicant: Karthik Janakiraman ,  Victor Wang ,  Vikash Banthia ,  Teresa Winson ,  Nitin Ingle

Inventor： Karthik Janakiraman ,  Victor Wang ,  Vikash Banthia ,  Teresa Winson ,  Nitin Ingle

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/00 ,  H01L21/677 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01L21/67754 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/52 ,  H01L21/67017 ,  H01L21/67178 ,  H01L21/6719

Abstract: A system for processing substrates comprises a plurality of process chambers. Each process chamber includes an inlet gas distribution member connected to an inlet gas line to distribute gas from the inlet gas line into the process chamber, and a gas outlet. The inlet gas distribution member has an inlet gas distribution member impedance to a gas flow through the inlet gas distribution member into the process chamber. The plurality of process chambers are substantially identical. A source gas delivery line is connected to the inlet gas lines of the plurality of process chambers to supply a gas flow to be divided into the inlet gas lines. A plurality of tunable upstream gas restrictors are each disposed in one of the inlet gas lines connected to the inlet gas distribution members of the process chambers and are configured to adjust a flow rate into the corresponding process chamber.

Abstract translation: 用于处理衬底的系统包括多个处理室。 每个处理室包括连接到入口气体管线以将气体从入口气体管线分配到处理室中的入口气体分配构件和气体出口。 入口气体分配构件具有入口气体分配构件对通过入口气体分配构件的气体流入处理室的阻抗。 多个处理室基本相同。 源气体输送管线连接到多个处理室的入口气体管线，以供应待分成入口气体管线的气流。 多个可调节的上游气体限制器分别设置在连接到处理室的入口气体分配构件的入口气体管线中的一个中，并且被配置为调节进入相应处理室的流量。