公开(公告)号：US20070296037A1

公开(公告)日：2007-12-27

申请号：US11812813

申请日：2007-06-21

Applicant: Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

Inventor： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

IPC: H01L27/12 ,  H01L21/84

CPC classification number: H01L23/293 ,  H01L23/49855 ,  H01L23/66 ,  H01L27/1248 ,  H01L27/1266 ,  H01L27/13 ,  H01L28/10 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

Abstract: The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer. In addition, a substrate covering an element formation layer side is a substrate having a support on its surface is used in the manufacturing process.

Abstract translation: 本发明提供了利用半导体器件中使用的柔性衬底的优点的薄且可弯曲的半导体器件以及半导体器件的制造方法。 半导体器件具有被绝缘层覆盖的至少一个表面，该绝缘层用作用于保护的衬底。 在半导体器件中，绝缘层形成在用作天线的导电层上，使得不覆盖导电层的部分中的绝缘层的厚度比值至少为1.2，并且该值 在导电层上形成的绝缘层与导电层的厚度比为至少0.2。 此外，导电层而不是绝缘层不会在半导体器件的侧面露出，并且绝缘层覆盖TFT和导电层。 此外，在制造过程中使用覆盖元件形成层侧的基板是其表面上具有支撑体的基板。

公开(公告)号：US20050285231A1

公开(公告)日：2005-12-29

申请号：US11157166

申请日：2005-06-21

Applicant: Tatsuya Arao ,  Yoshitaka Dozen ,  Daiki Yamada ,  Eiji Sugiyama ,  Tomoko Tamura ,  Junya Maruyama ,  Nozomi Horikoshi ,  Yuugo Goto

Inventor： Tatsuya Arao ,  Yoshitaka Dozen ,  Daiki Yamada ,  Eiji Sugiyama ,  Tomoko Tamura ,  Junya Maruyama ,  Nozomi Horikoshi ,  Yuugo Goto

IPC: H01L21/461 ,  H01L21/68 ,  H01L21/77 ,  H01L23/58

CPC classification number: H01L27/1266 ,  H01L21/6835 ,  H01L24/97 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1255 ,  H01L2221/68363 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/00

Abstract: An efficient mass-production method of very small devices that can receive or transmit data in touch, preferably, out of touch is provided by forming an integrated circuit made of a thin film over a large glass substrate and transferring the integrated circuit to another backing to be divided. Especially, the integrated circuit made of a thin film is difficult to use since there is a threat that the integrated circuit is flied in all directions as the integrated circuit is extremely thin. According to the present invention, multiple holes or grooves reaching the peel layer are provided, and a material body having a pattern shape that does not cover the holes (or grooves) and the device portion is provided, then, gas or liquid containing fluorine halide is introduced to remove selectively the peel layer.

Abstract translation: 通过在大玻璃基板上形成由薄膜制成的集成电路并将集成电路传送到另一个背衬来提供可以接收或传输触摸数据，优选不接触的非常小的器件的有效批量生产方法 被分割 特别是，由于集成电路非常薄，因此存在集成电路在各个方向上飞行的威胁，因此难以使用由薄膜制成的集成电路。 根据本发明，提供到达剥离层的多个孔或槽，并且设置具有不覆盖孔（或沟槽）和器件部分的图案形状的材料体，然后将含有卤化物的气体或液体 被引入以选择性地去除剥离层。

公开(公告)号：US08552418B2

公开(公告)日：2013-10-08

申请号：US13157338

申请日：2011-06-10

Applicant: Eiji Sugiyama ,  Yoshitaka Dozen ,  Hisashi Ohtani ,  Takuya Tsurume

Inventor： Eiji Sugiyama ,  Yoshitaka Dozen ,  Hisashi Ohtani ,  Takuya Tsurume

IPC: H01L35/24

CPC classification number: H01L27/1266 ,  H01L23/145 ,  H01L23/49855 ,  H01L27/105 ,  H01L27/115 ,  H01L27/1248 ,  H01L27/13 ,  H01L29/78603 ,  H01L2223/6677 ,  H01L2224/16225 ,  H01L2924/07811 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01Q1/2225 ,  H01Q1/2283 ,  H01L2924/00

Abstract: The present invention provides a semiconductor device which is not easily damaged by external local pressure. The present invention further provides a method for manufacturing a highly-reliable semiconductor device, which is not destructed by external local pressure, with a high yield. A structure body, in which high-strength fiber of an organic compound or an inorganic compound is impregnated with an organic resin, is provided over an element layer having a semiconductor element formed using a non-single crystal semiconductor layer, and heating and pressure bonding are performed, whereby a semiconductor device is manufactured, to which the element layer and the structure body in which the high-strength fiber of an organic compound or an inorganic compound is impregnated with the organic resin are firmly fixed together.

Abstract translation: 本发明提供一种不容易被外部局部压力损坏的半导体器件。 本发明还提供一种以高产率制造不被外部局部压力破坏的高可靠性半导体器件的方法。 在具有使用非单晶半导体层形成的半导体元件的元件层上设置有机化合物或无机化合物的高强度纤维被有机树脂浸渍的结构体，加热和压接 由此制造半导体器件，将有机化合物或无机化合物的高强度纤维与有机树脂浸渍的元件层和结构体牢固地固定在一起。

公开(公告)号：US08530335B2

公开(公告)日：2013-09-10

申请号：US13071629

申请日：2011-03-25

Applicant: Tomoko Tamura ,  Eiji Sugiyama ,  Yoshitaka Dozen ,  Koji Dairiki ,  Takuya Tsurume

Inventor： Tomoko Tamura ,  Eiji Sugiyama ,  Yoshitaka Dozen ,  Koji Dairiki ,  Takuya Tsurume

IPC: H01L21/30 ,  H01L21/46 ,  H01L21/302 ,  H01L21/461 ,  H01L23/58

CPC classification number: H01L21/02381 ,  H01L21/84 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/13 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/81001

Abstract: A release layer formed over a substrate; at least one of thin film integrated circuits is formed over the release layer; a film is formed over each of the at least one of thin film integrated circuits; and the release layer is removed by using an etchant; thus, the at least one of thin film integrated circuits is peeled from the substrate. A semiconductor device is formed by sealing the peeled thin film integrated circuit by lamination or the like.

Abstract translation: 形成在衬底上的释放层; 在剥离层上形成薄膜集成电路中的至少一个; 在薄膜集成电路中的至少一个上形成膜; 并通过使用蚀刻剂除去释放层; 因此，薄膜集成电路中的至少一个从基板剥离。 半导体器件通过层压等密封剥离的薄膜集成电路而形成。

公开(公告)号：US08278663B2

公开(公告)日：2012-10-02

申请号：US12985364

申请日：2011-01-06

Applicant: Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Kaori Ogita ,  Naoto Kusumoto

Inventor： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Kaori Ogita ,  Naoto Kusumoto

IPC: H01L29/786

CPC classification number: D21H21/48 ,  B32B29/00 ,  D21H27/32 ,  G06K19/07749 ,  H01L23/49855 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/1266 ,  H01L29/78603 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Paper embedded with a semiconductor device capable of communicating wirelessly is realized, whose unevenness of a portion including the semiconductor device does not stand out and the paper is thin with a thickness of less than or equal to 130 μm. A semiconductor device is provided with a circuit portion and an antenna, and the circuit portion includes a thin film transistor. The circuit portion and the antenna are separated from a substrate used during manufacturing, and are interposed between a flexible base and a sealing layer and protected. The semiconductor device can be bent, and the thickness of the semiconductor device itself is less than or equal to 30 μm. The semiconductor device is embedded in a paper in a papermaking process.

Abstract translation: 实现了能够无线地进行通信的半导体装置的纸，其中包含半导体装置的部分的不均匀性不突出，并且纸薄而厚度小于或等于130μm。 半导体器件设置有电路部分和天线，并且电路部分包括薄膜晶体管。 电路部分和天线与在制造期间使用的基板分离，并且被插入在柔性基底和密封层之间并被保护。 半导体器件可以弯曲，并且半导体器件本身的厚度小于或等于30μm。 半导体器件以造纸工艺嵌入纸中。

公开(公告)号：US20110073861A1

公开(公告)日：2011-03-31

申请号：US12902642

申请日：2010-10-12

Applicant: Daiki YAMADA ,  Yoshitaka DOZEN ,  Eiji SUGIYAMA ,  Hidekazu TAKAHASHI

Inventor： Daiki YAMADA ,  Yoshitaka DOZEN ,  Eiji SUGIYAMA ,  Hidekazu TAKAHASHI

IPC: H01L29/786

CPC classification number: H01L27/1266 ,  H01L27/124 ,  H01L27/1292 ,  H01L27/1296 ,  H01L29/78621 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81001 ,  H01L2924/00

Abstract: An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including a first insulating film, a thin film circuit formed over one surface of the first insulating film, a second insulating film formed over the thin film circuit, an electrode formed over the second insulating film, and a resin film formed over the electrode, is formed. A conductive film is formed adjacent to the other surface of the first insulating film of the stacked body to be overlapped with the electrode. The conductive film is irradiated with a laser.

Abstract translation: 本发明的目的是提供薄膜电路部分的结构和薄膜电路部分的制造方法，通过该薄膜电路部分可以容易地在薄膜电路下形成用于连接到外部的电极。 包括第一绝缘膜，在第一绝缘膜的一个表面上形成的薄膜电路，形成在薄膜电路上的第二绝缘膜，形成在第二绝缘膜上的电极和形成在第二绝缘膜上的树脂膜的层叠体 电极。 导电膜与层叠体的第一绝缘膜的另一表面相邻地形成为与电极重叠。 用激光照射导电膜。

公开(公告)号：US20110024853A1

公开(公告)日：2011-02-03

申请号：US12892961

申请日：2010-09-29

Applicant: Eiji SUGIYAMA ,  Yoshitaka DOZEN ,  Hisashi OHTANI ,  Takuya TSURUME

Inventor： Eiji SUGIYAMA ,  Yoshitaka DOZEN ,  Hisashi OHTANI ,  Takuya TSURUME

IPC: H01L29/66

CPC classification number: H01L27/1266 ,  H01L23/145 ,  H01L23/49855 ,  H01L27/105 ,  H01L27/115 ,  H01L27/1248 ,  H01L27/13 ,  H01L29/78603 ,  H01L2223/6677 ,  H01L2224/16225 ,  H01L2924/07811 ,  H01L2924/12032 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01Q1/2225 ,  H01Q1/2283 ,  H01L2924/00

Abstract: The present invention provides a semiconductor device which is not easily damaged by external local pressure. The present invention further provides a manufacturing method of a highly-reliable semiconductor device, which is not destroyed by external local pressure, with a high yield. A structure body, in which high-strength fiber of an organic compound or an inorganic compound is impregnated with an organic resin, is provided over an element substrate having a semiconductor element formed using a single crystal semiconductor region, and heating and pressure bonding are performed, whereby a semiconductor device is manufactured, to which the element substrate and the structure body in which the high-strength fiber of an organic compound or an inorganic compound is impregnated with the organic resin are fixed together.

Abstract translation: 本发明提供一种不容易被外部局部压力损坏的半导体器件。 本发明还提供了一种高可靠性的半导体器件的制造方法，其不被外部局部压力破坏，而且产率高。 在具有使用单晶半导体区域形成的半导体元件的元件基板上设置有有机化合物或无机化合物的高强度纤维被有机树脂浸渍的结构体，进行加热和压接 由此制造半导体器件，元件基板和有机化合物的高强度纤维或无机化合物浸渍有机树脂的结构体固定在一起。

公开(公告)号：US07820526B2

公开(公告)日：2010-10-26

申请号：US11918950

申请日：2006-05-17

Applicant: Daiki Yamada ,  Yoshitaka Dozen

Inventor： Daiki Yamada ,  Yoshitaka Dozen

IPC: H01L21/30 ,  H01L21/46

CPC classification number: H01L27/1266 ,  H01L21/6835 ,  H01L24/97 ,  H01L27/1214 ,  H01L27/13 ,  H01L27/3244 ,  H01L2221/68363 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01054 ,  H01L2924/01055 ,  H01L2924/0106 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00

Abstract: To provide a manufacturing method of a semiconductor device in which manufacturing cost can be reduced, and a manufacturing method of a semiconductor device with reduced manufacturing time and improved yield. A manufacturing method of a semiconductor device is provided, which includes the steps of forming a first layer containing a metal over a substrate, forming a second layer containing an inorganic material on the first layer, forming a third layer including a thin film transistor on the second layer, irradiating the first layer, the second layer, and the third layer with laser light to form an opening portion through at least the second layer and the third layer.

Abstract translation: 提供可以降低制造成本的半导体器件的制造方法以及制造时间缩短且产率提高的半导体器件的制造方法。 提供了一种半导体器件的制造方法，其包括以下步骤：在衬底上形成包含金属的第一层，在第一层上形成包含无机材料的第二层，在第一层上形成包括薄膜晶体管的第三层 第二层，用激光照射第一层，第二层和第三层，以形成通过至少第二层和第三层的开口部分。

公开(公告)号：US20100126681A1

公开(公告)日：2010-05-27

申请号：US12694505

申请日：2010-01-27

Applicant: Yoshitaka DOZEN ,  Tomoyuki AOKI ,  Hidekazu TAKAHASHI ,  Daiki YAMADA ,  Kaori OGITA ,  Naoto KUSUMOTO

Inventor： Yoshitaka DOZEN ,  Tomoyuki AOKI ,  Hidekazu TAKAHASHI ,  Daiki YAMADA ,  Kaori OGITA ,  Naoto KUSUMOTO

IPC: D21H23/00

CPC classification number: D21H21/48 ,  B32B29/00 ,  D21H27/32 ,  G06K19/07749 ,  H01L23/49855 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/1266 ,  H01L29/78603 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Paper embedded with a semiconductor device capable of communicating wirelessly is realized, whose unevenness of a portion including the semiconductor device does not stand out and the paper is thin with a thickness of less than or equal to 130 μm. A semiconductor device is provided with a circuit portion and an antenna, and the circuit portion includes a thin film transistor. The circuit portion and the antenna are separated from a substrate used during manufacturing, and are interposed between a flexible base and a sealing layer and protected. The semiconductor device can be bent, and the thickness of the semiconductor device itself is less than or equal to 30 μm. The semiconductor device is embedded in a paper in a papermaking process.

Abstract translation: 实现了能够无线地进行通信的半导体装置的纸，其中包含半导体装置的部分的不均匀性不突出，并且纸薄而厚度小于或等于130μm。 半导体器件设置有电路部分和天线，并且电路部分包括薄膜晶体管。 电路部分和天线与在制造期间使用的基板分离，并且被插入在柔性基底和密封层之间并被保护。 半导体器件可以弯曲，并且半导体器件本身的厚度小于或等于30μm。 半导体器件以造纸工艺嵌入纸中。

公开(公告)号：US20090140249A1

公开(公告)日：2009-06-04

申请号：US12342446

申请日：2008-12-23

Applicant: Daiki YAMADA ,  Yoshitaka DOZEN ,  Eiji SUGIYAMA ,  Hidekazu TAKAHASHI

Inventor： Daiki YAMADA ,  Yoshitaka DOZEN ,  Eiji SUGIYAMA ,  Hidekazu TAKAHASHI

IPC: H01L29/04

CPC classification number: H01L27/1266 ,  H01L27/124 ,  H01L27/1292 ,  H01L27/1296 ,  H01L29/78621 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81001 ,  H01L2924/00

Abstract: An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including a first insulating film, a thin film circuit formed over one surface of the first insulating film, a second insulating film formed over the thin film circuit, an electrode formed over the second insulating film, and a resin film formed over the electrode, is formed. A conductive film is formed adjacent to the other surface of the first insulating film of the stacked body to be overlapped with the electrode. The conductive film is irradiated with a laser.

Abstract translation: 本发明的目的是提供薄膜电路部分的结构和薄膜电路部分的制造方法，通过该薄膜电路部分可以容易地在薄膜电路下形成用于连接到外部的电极。 包括第一绝缘膜，在第一绝缘膜的一个表面上形成的薄膜电路，形成在薄膜电路上的第二绝缘膜，形成在第二绝缘膜上的电极和形成在第二绝缘膜上的树脂膜的层叠体 电极。 导电膜与层叠体的第一绝缘膜的另一表面相邻地形成为与电极重叠。 用激光照射导电膜。