公开(公告)号：US20120097861A1

公开(公告)日：2012-04-26

申请号：US13280162

申请日：2011-10-24

Applicant: Nicholas White ,  Zhimin Wan ,  Erik Collart

Inventor： Nicholas White ,  Zhimin Wan ,  Erik Collart

IPC: H01J3/20 ,  H01J3/14 ,  H01J3/26

CPC classification number: H01J37/05 ,  H01J3/04 ,  H01J3/26 ,  H01J37/1472 ,  H01J37/3007 ,  H01J37/3171 ,  H01J2237/04756 ,  H01J2237/053 ,  H01J2237/057 ,  H01J2237/151 ,  H01J2237/303 ,  H01J2237/31701

Abstract: A deceleration apparatus capable of decelerating a short spot beam or a tall. ribbon beam is disclosed. In either case, effects tending to degrade the shape of the beam profile are controlled. Caps to shield the ion beam from external potentials are provided. Electrodes whose position and potentials are adjustable are provided, on opposite sides of the beam, to ensure that the shape of the decelerating and deflecting electric fields does not significantly deviate from the optimum shape, even in the presence of the significant space-charge of high current low-energy beams of heavy ions.

Abstract translation: 减速装置，能够使短点梁或高度减速。 公开了带状束。 在任一种情况下，都会控制趋向于降低光束轮廓形状的效果。 提供了用于将离子束屏蔽到外部电位的盖子。 其位置和电位可调的电极设置在梁的相对两侧，以确保减速和偏转电场的形状不会显着偏离最佳形状，即使存在显着的空间电荷高 目前低能量的重离子束。

公开(公告)号：US20110049383A1

公开(公告)日：2011-03-03

申请号：US12553946

申请日：2009-09-03

Applicant: ZHIMIN WAN ,  JOHN D. POLLOCK ,  DON BERRIAN

Inventor： ZHIMIN WAN ,  JOHN D. POLLOCK ,  DON BERRIAN

IPC: C23C14/48 ,  H01J27/02

CPC classification number: C23C14/48 ,  C23C14/04 ,  C23C14/50 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0458 ,  H01J2237/1503 ,  H01J2237/20228 ,  H01J2237/30488

Abstract: An ion implanter and an ion implant method for achieving a two-dimensional implantation on a wafer are disclosed. The ion implanter includes an ion source, a mass analyzer, a wafer driving mechanism, an aperture mechanism, and an aperture driving mechanism. The ion source and the mass analyzer are capable of providing an ion beam. The wafer driving mechanism is configured to drive a wafer along only a first direction. The aperture mechanism has an aperture for filtering the ion beam before the wafer is implanted. The aperture driving mechanism is configured to drive the aperture along a second direction intersecting the first direction. By moving the wafer and the aperture along different directions separately, the projection of the ion beam can achieve a two-dimensional implantation on the wafer. Here, at least one of the directions is optionally parallel to the longer dimension of the two-dimensional cross-section of the ion beam.

Abstract translation: 公开了一种用于在晶片上实现二维注入的离子注入机和离子注入方法。 离子注入机包括离子源，质量分析器，晶片驱动机构，孔径机构和孔径驱动机构。 离子源和质量分析仪能够提供离子束。 晶片驱动机构构造成仅沿第一方向驱动晶片。 光圈机构具有用于在晶片植入之前对离子束进行过滤的孔。 孔径驱动机构构造成沿着与第一方向相交的第二方向驱动孔。 通过分别沿不同方向移动晶片和孔，离子束的投影可以在晶片上实现二维注入。 这里，至少一个方向可选地平行于离子束的二维横截面的较长尺寸。

公开(公告)号：US07807986B1

公开(公告)日：2010-10-05

申请号：US12473167

申请日：2009-05-27

Applicant: Ko-Chuan Jen ,  York Yang ,  Zhimin Wan

Inventor： Ko-Chuan Jen ,  York Yang ,  Zhimin Wan

IPC: H01J37/317 ,  H01J49/20

CPC classification number: H01J37/3171 ,  H01J37/147 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/24542

Abstract: An ion implanter and method for adjusting the shape of an ion beam are disclosed. After an ion beam is outputted from an analyzer magnet unit, at least one set of bar magnets is used to adjust the shape of the ion beam when the ion beam passes through a space enclosed by the bar magnets. The set of bar magnets can apply a multi-stage magnetic field on the ion beam. Hence, different portions of the ion beam will have different deformations or alterations, because the multi-stage magnetic field will apply a non-uniform force to change the trajectory of ions. Moreover, each bar magnet of the set is powered by one and only one power source, such that the set of bar magnets essentially only can adjust the magnitude of the multi-stage magnetic field. Particular structures and techniques for achieving the multi-stage magnetic field are not limited.

Abstract translation: 公开了一种用于调节离子束形状的离子注入机和方法。 在从分析器磁体单元输出离子束之后，当离子束通过由棒状磁体包围的空间时，使用至少一组棒状磁体来调节离子束的形状。 该组磁棒可以在离子束上施加多级磁场。 因此，离子束的不同部分将具有不同的变形或变化，因为多级磁场将施加不均匀的力来改变离子的轨迹。 此外，该组的每个棒状磁体由一个且仅一个电源供电，使得该组磁棒基本上只能够调整多级磁场的大小。 用于实现多级磁场的特定结构和技术不受限制。

公开(公告)号：US06579420B2

公开(公告)日：2003-06-17

申请号：US09780212

申请日：2001-02-09

Applicant: Zhimin Wan ,  Jiong Chen ,  Peiching Ling ,  Jianmin Qiao

Inventor： Zhimin Wan ,  Jiong Chen ,  Peiching Ling ,  Jianmin Qiao

IPC: C23C1600

CPC classification number: C23C14/505 ,  C23C14/044 ,  C23C14/46

Abstract: A thin film deposition apparatus and method are disclosed in this invention. The apparatus includes a depositing thin-film particle source, a beam-defining aperture between the particle source and the deposited substrate(s), and a substrate holder to rotate the substrate(s) around its center and move the center along a lateral path so that the substrate(s) can scan across the particle beam from one substrate edge to the other edge. The method includes a step of providing a vacuum chamber for containing a thin-film particle source for generating thin-film particles to deposit a thin-film on the substrates. The method further includes a step of containing a substrate holder in the vacuum chamber for holding a plurality of substrates having a thin-film deposition surface of each substrate facing the beam of thin-film particles. The method further includes a step of providing a rotational means for rotating the substrate holder to rotate each of the substrates exposed to the thin-film particles for depositing a thin film thereon. And, the method further includes a step of providing a laterally reciprocal moving means for reciprocally moving said substrate holder for said beam traversing on said substrate holder from one side of the edge to the other side of the edge or at least passing through the central area of said substrate holder.

公开(公告)号：US08890506B2

公开(公告)日：2014-11-18

申请号：US13227425

申请日：2011-09-07

Applicant: Peter M. Kopalidis ,  Zhimin Wan

Inventor： Peter M. Kopalidis ,  Zhimin Wan

IPC: G01N27/00 ,  G01R19/00 ,  G01N27/62

CPC classification number: G01N27/62 ,  G01R19/0061

Abstract: Techniques for measuring ion beam current, especially for measuring low energy ion beam current, are disclosed. The technique may be realized as an ion beam current measurement apparatus having at least a planar Faraday cup and a voltage assembly. The planar Faraday cup is located close to an inner surface of a chamber wall, and intersects an ion beam path. The voltage assembly is located outside a chamber having the chamber wall. Therefore, by properly adjusting the electric voltage applied on the planar Faraday cup by the voltage assembly, some undesired charged particles may be adequately suppressed. Further, the planar Faraday cup may surround an opening of a non-planar Faraday cup which may be any conventional Faraday cup. Therefore, the whole ion beam may be received and measured well by the larger cross-section area of the planar Faraday cup on the ion beam path.

Abstract translation: 公开了用于测量离子束电流的技术，特别是用于测量低能量离子束电流的技术。 该技术可以被实现为具有至少一个平面法拉第杯和电压组件的离子束电流测量装置。 平面法拉第杯位于靠近室壁的内表面并与离子束路相交。 电压组件位于具有室壁的室外。 因此，通过适当地调整通过电压组件施加在平面法拉第杯上的电压，可以充分抑制一些不期望的带电粒子。 此外，平面法拉第杯可以围绕可以是任何常规法拉第杯的非平面法拉第杯的开口。 因此，可以通过离子束路径上的平面法拉第杯的较大的横截面面积良好地接收和测量整个离子束。

公开(公告)号：US20130001433A1

公开(公告)日：2013-01-03

申请号：US13608941

申请日：2012-09-10

Applicant: Wei-Cheng LIN ,  ZHIMIN WAN

Inventor： Wei-Cheng LIN ,  ZHIMIN WAN

IPC: G21K5/04 ,  G21K5/10 ,  G21K5/00

CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J37/304 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/30472

Abstract: The invention provides a method to real time monitor the ion beam. Initially, turn on an ion implanter which has a wafer holder, a Faraday cup and a measurement device positioned close to a special portion of a pre-determined ion beam path of the ion beam, wherein the Faraday cup is positioned downstream the wafer holder and the measurement device is positioned upstream the wafer holder. Then, measure a first ion beam current received by the Faraday cup and a second ion beam current received by the measurement device. By continuously measuring the first and second ion beam current, the ion beam is real-time monitored even the Faraday cup is at least partially blocked during the period of moving the wafer holder across the ion beam. Accordingly, the on-going implantation process and the operation of the implanter can be adjusted.

Abstract translation: 本发明提供了一种实时监测离子束的方法。 最初，打开一个离子注入机，该离子注入机具有晶片保持器，法拉第杯和靠近离子束预定离子束路径的特殊部分的测量装置，其中法拉第杯位于晶片保持器的下游， 测量装置位于晶片保持器的上游。 然后，测量由法拉第杯接收的第一离子束电流和由测量装置接收的第二离子束电流。 通过连续地测量第一和第二离子束电流，即使在移动晶片夹持器穿过离子束的时段期间，即使法拉第杯至少部分被阻挡，离子束也被实时监测。 因此，可以调整正在进行的植入过程和注入机的操作。

公开(公告)号：US20120187290A1

公开(公告)日：2012-07-26

申请号：US13012759

申请日：2011-01-24

Applicant: KO-CHUAN JEN ,  ZHIMIN WAN

Inventor： KO-CHUAN JEN ,  ZHIMIN WAN

IPC: H01J49/30

CPC classification number: H01J37/3171 ,  H01J37/141 ,  H01J2237/24542

Abstract: Apparatus and method for adjusting an ion beam between a mass analyzer and a substrate holder. Herein, one or more bended, such as arch-shaped, curved or zigzag shaped, bar magnets are configured to apply one or more magnetic fields to adjust the shape or cross section of an ion beam passing through a space partially surrounded by the one or more bended bar magnets. At least one of the gap width between neighbor bended bar magnets, the curvature of each bended bar magnet and the current flowing through each bended bar magnet may be fixed or adjusted dependently or independently. Therefore, the Lorentz force applied on the ion beam along different directions may be changed in a desired manner, and then the ion beam may be flexibly elongated, compressed or shaped to meet the process requirement.

Abstract translation: 用于调整质量分析器和衬底保持器之间的离子束的装置和方法。 这里，一个或多个弯曲的，例如拱形，弯曲或锯齿形的棒状磁体被构造成施加一个或多个磁场以调节通过部分地围绕一个或多个磁体的空间的离子束的形状或横截面， 更弯曲的酒吧磁铁。 相邻的弯曲棒状磁体之间的间隙宽度中的至少一个，每个弯曲棒状磁体的曲率和流过每个弯曲磁体的磁体的电流可以相关地或独立地被固定或调节。 因此，沿着不同方向施加在离子束上的洛伦兹力可以以期望的方式改变，然后离子束可以灵活地伸长，压缩或成形以满足工艺要求。

公开(公告)号：US06918351B2

公开(公告)日：2005-07-19

申请号：US10133140

申请日：2002-04-26

Applicant: Jiong Chen ,  Zhimin Wan

Inventor： Jiong Chen ,  Zhimin Wan

IPC: H01J37/317 ,  C23C16/00 ,  H01G37/317

CPC classification number: H01J37/3171 ,  H01J2237/0041

Abstract: This invention discloses an ion implantation apparatus that has an ion source and an ion extraction device for extracting an ion beam therefrom. The ion implantation apparatus includes an ion beam sweeping-and-deflecting device disposed immediately next to the ion extraction device. The ion implantation apparatus further includes a magnetic analyzer for guiding the ion beam passed through the deflecting-and-sweeping device. The mass analyzer is also used for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. The sweeping-and-deflecting device is applied to deflect the ion beam to project through the magnetic mass analyzer and the mass slit for sweeping the ion beam over a surface of the substrate to carry out an ion implantation.

Abstract translation: 本发明公开了一种具有离子源和离子提取装置的离子注入装置，用于从其中提取离子束。 离子注入装置包括紧邻离子提取装置设置的离子束扫掠和偏转装置。 离子注入装置还包括用于引导穿过偏转扫掠装置的离子束的磁分析器。 质量分析仪还用于选择具有特定质荷比的离子以通过质量狭缝投射到基底上。 施加扫掠和偏转装置以使离子束偏转穿过磁性质量分析器和质量狭缝，以将离子束扫过衬底的表面以进行离子注入。

公开(公告)号：US08669539B2

公开(公告)日：2014-03-11

申请号：US12748877

申请日：2010-03-29

Applicant: Zhimin Wan ,  John D. Pollock ,  Don Berrian ,  Causon Ko-Chuan Jen

Inventor： Zhimin Wan ,  John D. Pollock ,  Don Berrian ,  Causon Ko-Chuan Jen

IPC: H01J37/317 ,  H01J37/02

CPC classification number: C23C14/48 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0455 ,  H01J2237/24542 ,  H01J2237/31711

Abstract: A variable aperture within an aperture device is used to shape the ion beam before the substrate is implanted by shaped ion beam, especially to finally shape the ion beam in a position right in front of the substrate. Hence, different portions of a substrate, or different substrates, can be implanted respectively by different shaped ion beams without going through using multiple fixed apertures or retuning the ion beam each time. In other words, different implantations may be achieved respectively by customized ion beams without high cost (use multiple fixed aperture devices) and complex operation (retuning the ion beam each time). Moreover, the beam tune process for acquiring a specific ion beam to be implanted may be accelerated, to be faster than using multiple fixed aperture(s) and/or retuning the ion beam each time, because the adjustment of the variable aperture may be achieved simply by mechanical operation.

Abstract translation: 在通过成形离子束注入衬底之前，使用孔装置内的可变孔径来形成离子束，特别是最终在离开衬底前方的位置形成离子束。 因此，可以通过不同的成形离子束分别注入衬底或不同衬底的不同部分，而不需要通过使用多个固定孔或每次重新调整离子束。 换句话说，可以通过定制的离子束分别实现不同的注入，而不需要高成本（使用多个固定孔径器件）和复杂的操作（每次重新调整离子束）。 此外，可以加速用于获取要注入的特定离子束的光束调整过程，以便每次都比使用多个固定孔径和/或重新调整离子束更快，因为可以实现可变孔径的调节 简单地通过机械操作。

公开(公告)号：US08304330B2

公开(公告)日：2012-11-06

申请号：US13351334

申请日：2012-01-17

Applicant: John D. Pollock ,  Zhimin Wan ,  Erik Collart

Inventor： John D. Pollock ,  Zhimin Wan ,  Erik Collart

IPC: H01L21/425

CPC classification number: C23C14/48 ,  H01L21/26513 ,  H01L21/26593 ,  H01L21/324

Abstract: Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process.

Abstract translation: 提供了用于低温离子注入的技术以提高生产量。 在低温离子注入期间，可以在通过冷却过程将衬底温度降低到约为规定的植入温度之前开始注入工艺，并且可以开始加热过程以在植入过程完成之前增加衬底温度 。 此外，可以在植入过程的一个或多个部分期间执行一个或多个温度调节过程，使得在植入过程期间，衬底温度可以可控地高于处方植入物温度。