公开(公告)号：US20180019359A1

公开(公告)日：2018-01-18

申请号：US15706090

申请日：2017-09-15

申请人： Alta Devices, Inc.

发明人： Brendan M. KAYES ,  Gang HE ,  Sylvia SPRUYTTE ,  I-Kang DING ,  Gregg HIGASHI

IPC分类号： H01L31/0725 ,  H01L31/0735 ,  H01L31/0236 ,  H01L31/0232 ,  H01L31/18 ,  H01L31/0216

CPC分类号： H01L31/0725 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/02327 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/055 ,  H01L31/0735 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/1892 ,  H01L31/1896 ,  Y02E10/544

摘要： An optoelectronic semiconductor device is disclosed. The device comprises a plurality of stacked p-n junctions (e.g., multi junction device). The optoelectronic semiconductor device includes a n-doped layer disposed below the p-doped layer to form a p-n layer such that electric energy is created when photons are absorbed by the p-n layer. Recesses are formed on top of the p-doped layer at the top of the plurality of stacked p-n junctions. The junctions create an offset and an interface layer is formed on top of the p-doped layer at the top of the plurality stacked p-n junctions. The device also includes a window layer disposed below the plurality stacked p-n junctions. In another aspect, one or more optical filters are inserted into a device to enhance its efficiency through photon recycling. The device can be fabricated by epitaxial growth on a substrate and removed from the substrate through a lift off process.

公开(公告)号：US20170047471A1

公开(公告)日：2017-02-16

申请号：US15340560

申请日：2016-11-01

申请人： Alta Devices, Inc.

发明人： I-Kang DING ,  Brendan M. KAYES ,  Rose TWIST ,  Sylvia SPRUYTTE ,  Feng LIU ,  Gregg HIGASHI ,  Melissa J. ARCHER ,  Gang HE

IPC分类号： H01L31/18 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/0236

CPC分类号： H01L31/184 ,  H01L31/02168 ,  H01L31/022466 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/056 ,  H01L31/18 ,  H01L31/1884 ,  Y02E10/50 ,  Y02E10/52 ,  Y02P70/521

摘要： A method for providing a textured layer in an optoelectronic device is disclosed. The method includes depositing a template layer on a first layer. The template layer has significant inhomogeneity either in thickness or in composition, or both, including the possibility of forming one or more islands to provide at least one textured surface of the island layer. The method also includes exposing the template layer and the first layer to an etching process to create or alter at least one textured surface. The altered at least one textured surface is operative to cause scattering of light.

摘要翻译： 公开了一种用于在光电子器件中提供纹理化层的方法。 该方法包括在第一层上沉积模板层。 模板层在厚度或组成或两者中具有显着的不均匀性，包括形成一个或多个岛以提供岛层的至少一个纹理表面的可能性。 该方法还包括将模板层和第一层暴露于蚀刻工艺以产生或改变至少一个纹理表面。 改变的至少一个有纹理的表面可操作以引起光的散射。

公开(公告)号：US20160155881A1

公开(公告)日：2016-06-02

申请号：US15006003

申请日：2016-01-25

申请人： Alta Devices, Inc.

发明人： Brendan M. KAYES ,  Gregg S. HIGASHI ,  Sam COWLEY ,  Christopher FRANCE ,  Ling ZHANG ,  Gang HE

IPC分类号： H01L31/109 ,  H01L31/18 ,  H01L31/0232

CPC分类号： H01L31/0392 ,  H01L31/0445 ,  H01L31/0693 ,  H01L31/0735 ,  H01L31/184 ,  H01L31/1892 ,  Y02E10/544

摘要： An optoelectronic device with high band-gap absorbers optimized for indoor use and a method of manufacturing are disclosed. The optoelectronic semiconductor device comprises a p-n structure made of one or more compound semiconductors, wherein the p-n structure comprises a base layer and an emitter layer, wherein the base and/or emitter layers comprise materials whose quantum efficiency spectrum is well-matched to a spectrum of incident light, wherein the incident light is from a light source other than the sun; and wherein the device is a flexible single-crystal device. The method for forming an optoelectronic device optimized for the conversion of light from non-solar illumination sources into electricity, comprises depositing a buffer layer on a wafer; depositing a release layer above the buffer layer; depositing a p-n structure above the release layer; and lifting off the p-n structure from the wafer.

摘要翻译： 公开了一种具有室内优化的高带隙吸收体的光电子器件及其制造方法。 光电子半导体器件包括由一个或多个化合物半导体制成的pn结构，其中pn结构包括基极层和发射极层，其中基极和/或发射极层包括其量子效率谱与光谱良好匹配的材料 的入射光，其中所述入射光来自除了太阳以外的光源; 并且其中所述装置是柔性单晶装置。 用于形成为从非太阳能照明光源转换为电而优化的光电器件的方法包括在晶片上沉积缓冲层; 在缓冲层上沉积释放层; 在释放层上方沉积p-n结构; 并从晶片上提起p-n结构。

公开(公告)号：US20150380576A1

公开(公告)日：2015-12-31

申请号：US14846675

申请日：2015-09-04

申请人： Alta Devices, Inc.

发明人： Brendan M. KAYES ,  Melissa J. ARCHER ,  Thomas J. GMITTER ,  Gang HE

IPC分类号： H01L31/0236 ,  H01L31/0725 ,  H01L31/0224 ,  H01L31/0687 ,  H01L31/18 ,  H01L31/0232

CPC分类号： H01L31/02363 ,  H01L31/02167 ,  H01L31/02327 ,  H01L31/035281 ,  H01L31/0693 ,  H01L31/184 ,  H01L31/1892 ,  H01L33/22 ,  H01L33/405 ,  Y02E10/544

摘要： An optoelectronic device and a method for fabricating the optoelectronic device are disclosed. The optoelectronic device comprises a p-n structure, a patterned dielectric layer comprising a dielectric material and a metal layer disposed on the dielectric layer. The metal layer makes one or more contact to the p-n structure through the patterned dielectric layer. The dielectric material may be chemically resistant to acids and may provide adhesion to the p-n structure and the metal layer. The method for fabricating an optoelectronic device comprises providing a p-n structure, providing a dielectric layer on the p-n structure and providing a metal layer on the dielectric layer and then lifting the device off the substrate, such that after the lift off the p-n structure is closer than the patterned dielectric layer to a front side of the device; wherein the device comprises the p-n structure, the patterned dielectric layer, and the metal layer.

摘要翻译： 公开了一种光电器件及其制造方法。 光电子器件包括p-n结构，包含电介质材料的图案化电介质层和设置在电介质层上的金属层。 金属层通过图案化的介电层与p-n结构形成一个或多个接触。 电介质材料可以对酸具有化学抗性，并且可以提供对p-n结构和金属层的粘附。 制造光电器件的方法包括提供pn结构，在pn结构上提供电介质层，并在电介质层上提供金属层，然后将器件从衬底上提起，使得在pn结构的剥离更接近 比图案化的电介质层到器件的前侧; 其中该器件包括p-n结构，图案化电介质层和金属层。

公开(公告)号：US20140251547A1

公开(公告)日：2014-09-11

申请号：US14281386

申请日：2014-05-19

申请人： ALTA DEVICES, INC.

发明人： Brian BROWN ,  Brian BURROWS ,  David BERKSTRESSOR ,  Gang HE ,  Thomas J. GMITTER

IPC分类号： B32B43/00

CPC分类号： B32B43/006 ,  H01L21/67086 ,  H01L21/67092 ,  H01L21/67132 ,  H01L21/67706 ,  H01L21/67721 ,  H01L21/6776 ,  H01L21/7813 ,  H01L31/1896 ,  Y02E10/50 ,  Y10T156/1111 ,  Y10T156/15

摘要： Epitaxial lift off systems and methods are presented. In one embodiment a tape is disposed on the opposite side of the epitaxial material than the substrate is used to hold the epitaxial material during the etching and removal steps of the ELO process. In various embodiments, the apparatus for removing the ELO film from the substrates without damaging the ELO film may include an etchant reservoir, substrate handling and tape handling mechanisms, including mechanisms to manipulate (e.g., cause tension, peel, widen the etch gap, etc.) the lift off component during the lift off process.

摘要翻译： 提出了外延提升系统和方法。 在一个实施例中，在ELO工艺的蚀刻和去除步骤期间，将带设置在外延材料的相对侧上，而不是衬底用于保持外延材料。 在各种实施例中，用于从衬底上移除ELO膜而不损坏ELO膜的设备可以包括蚀刻剂储存器，衬底处理和带处理机构，包括操作机构（例如引起张力，剥离，加宽蚀刻间隙等） ）在剥离过程中脱离组件。

公开(公告)号：US20180248069A1

公开(公告)日：2018-08-30

申请号：US15957446

申请日：2018-04-19

申请人： Alta Devices, Inc.

发明人： Brendan M. KAYES ,  Gang HE

IPC分类号： H01L31/18 ,  H01L33/00 ,  H01L31/028 ,  H01L31/0687

CPC分类号： H01L31/184 ,  H01L31/028 ,  H01L31/06875 ,  H01L31/1892 ,  H01L33/00 ,  H01L33/04 ,  H01L33/30 ,  Y02E10/544 ,  Y02E10/547

摘要： A multi-junction optoelectronic device and method of manufacture are disclosed. The method comprises providing a first p-n structure on a substrate, wherein the first p-n structure comprises a first base layer of a first semiconductor with a first bandgap such that a lattice constant of the first semiconductor matches a lattice constant of the substrate, and wherein the first semiconductor comprises a Group III-V semiconductor. The method includes providing a second p-n structure, wherein the second p-n structure comprises a second base layer of a second semiconductor with a second bandgap, wherein a lattice constant of the second semiconductor matches a lattice constant of the first semiconductor, and wherein the second semiconductor comprises a Group IV semiconductor. The method also includes lifting off the substrate the multi-junction optoelectronic device having the first p-n structure and the second p-n structure, wherein the multi-junction optoelectronic device is a flexible device.

公开(公告)号：US20180209018A1

公开(公告)日：2018-07-26

申请号：US15934409

申请日：2018-03-23

申请人： ALTA DEVICES, INC.

发明人： Thomas GMITTER ,  Gang HE ,  Melissa ARCHER ,  Siew NEO

IPC分类号： C22C29/00 ,  C30B33/06 ,  C30B33/08 ,  C30B29/00 ,  C30B29/42 ,  C30B29/40 ,  C30B33/10

CPC分类号： C22C29/00 ,  C30B29/00 ,  C30B29/40 ,  C30B29/42 ,  C30B33/06 ,  C30B33/08 ,  C30B33/10

摘要： Embodiments described herein provide processes for forming and removing epitaxial films and materials from growth wafers by epitaxial lift off (ELO) processes. In some embodiments, the growth wafer has edge surfaces with an off-axis orientation which is utilized during the ELO process. The off-axis orientation of the edge surface provides an additional variable for controlling the etch rate during the ELO process and therefore the etch front may be modulated to prevent the formation of high stress points which reduces or prevents stressing and cracking the epitaxial film stack. In one embodiment, the growth wafer is rectangular and has an edge surface with an off-axis orientation rotated by an angle greater than 0° and up to 90° relative to an edge orientation of at 0°.

公开(公告)号：US20180155808A1

公开(公告)日：2018-06-07

申请号：US15876001

申请日：2018-01-19

申请人： ALTA DEVICES, INC.

发明人： Thomas GMITTER ,  Gang HE ,  Melissa ARCHER ,  Siew NEO

IPC分类号： C22C29/00 ,  C30B33/06 ,  C30B33/08 ,  C30B29/00 ,  C30B29/42 ,  C30B29/40 ,  C30B33/10

CPC分类号： C22C29/00 ,  C30B29/00 ,  C30B29/40 ,  C30B29/42 ,  C30B33/06 ,  C30B33/08 ,  C30B33/10

摘要： Embodiments described herein provide processes for forming and removing epitaxial films and materials from growth wafers by epitaxial lift off (ELO) processes. In some embodiments, the growth wafer has edge surfaces with an off-axis orientation which is utilized during the ELO process. The off-axis orientation of the edge surface provides an additional variable for controlling the etch rate during the ELO process and therefore the etch front may be modulated to prevent the formation of high stress points which reduces or prevents stressing and cracking the epitaxial film stack. In one embodiment, the growth wafer is rectangular and has an edge surface with an off-axis orientation rotated by an angle greater than 0° and up to 90° relative to an edge orientation of at 0°.

公开(公告)号：US20170148930A1

公开(公告)日：2017-05-25

申请号：US15422218

申请日：2017-02-01

申请人： Alta Devices, Inc.

发明人： Yan ZHU ,  Sean SWEETNAM ,  Brendan M. KAYES ,  Melissa J. ARCHER ,  Gang HE

IPC分类号： H01L31/0236 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/0232 ,  H01L33/00 ,  H01L33/30 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L31/18 ,  H01L31/0304 ,  H01L33/22

CPC分类号： H01L33/0079 ,  H01L31/02168 ,  H01L31/02366 ,  H01L31/056 ,  H01L31/1892 ,  H01L33/0062 ,  H01L33/22 ,  H01L33/30 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0091 ,  Y02E10/52

摘要： An optoelectronic device having a textured layer is described. In an aspect, a method may be used to produce the optoelectronic device, where the method includes epitaxially growing a semiconductor layer of the optoelectronic device on a growth substrate, and exposing the semiconductor layer to an etching process to create at least one textured surface in the semiconductor layer. The textured semiconductor layer can be referred to as a textured layer. The etching process is performed without the use of a template layer, or similar layer, configured as a mask to generate the texturing. The etching process can be done by one or more of a liquid or solution-based chemical etchant, gas etching, laser etching, plasma etching, or ion etching. The method can also include lifting the semiconductor layer of the optoelectronic device from the growth substrate by, for example, the use of an epitaxial lift off (ELO) process.

公开(公告)号：US20170141256A1

公开(公告)日：2017-05-18

申请号：US15417105

申请日：2017-01-26

申请人： Alta Devices, Inc.

发明人： Brendan M. KAYES ,  Gang HE

IPC分类号： H01L31/0725 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0735 ,  H01L31/0236

CPC分类号： H01L31/184 ,  H01L31/028 ,  H01L31/06875 ,  H01L31/1892 ,  H01L33/00 ,  H01L33/04 ,  H01L33/30 ,  Y02E10/544 ,  Y02E10/547

摘要： A multi-junction optoelectronic device and method of manufacture are disclosed. The method comprises providing a first p-n structure on a substrate, wherein the first p-n structure comprises a first base layer of a first semiconductor with a first bandgap such that a lattice constant of the first semiconductor matches a lattice constant of the substrate, and wherein the first semiconductor comprises a Group III-V semiconductor. The method includes providing a second p-n structure, wherein the second p-n structure comprises a second base layer of a second semiconductor with a second bandgap, wherein a lattice constant of the second semiconductor matches a lattice constant of the first semiconductor, and wherein the second semiconductor comprises a Group IV semiconductor. The method also includes lifting off the substrate the multi-junction optoelectronic device having the first p-n structure and the second p-n structure, wherein the multi-junction optoelectronic device is a flexible device.