公开(公告)号：US20190096643A1

公开(公告)日：2019-03-28

申请号：US16203353

申请日：2018-11-28

Applicant: Applied Materials, Inc.

Inventor： Simon Nicholas BINNS ,  Brian T. WEST ,  Ronald Vern SCHAUER ,  Roger M. JOHNSON ,  Michael S. COX

IPC: H01J37/34 ,  H01J37/32

Abstract: A process chamber includes a chamber body having a chamber lid assembly disposed thereon, one or more monitoring devices coupled to the chamber lid assembly, and one or more antennas disposed adjacent to the chamber lid assembly that are in communication with the one or more monitoring devices.

公开(公告)号：US20190022577A9

公开(公告)日：2019-01-24

申请号：US15486938

申请日：2017-04-13

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX ,  Monique MCINTOSH ,  Colin John DICKINSON ,  Paul E. FISHER ,  Yutaka TANAKA ,  Zheng YUAN

IPC: B01D53/32 ,  B01D53/64 ,  B01D53/70 ,  B01D53/54 ,  B01D53/76 ,  H01J37/32 ,  B01J19/08

CPC classification number: B01D53/32 ,  B01D53/54 ,  B01D53/64 ,  B01D53/70 ,  B01D53/76 ,  B01D2251/00 ,  B01D2251/10 ,  B01D2251/102 ,  B01D2251/104 ,  B01D2251/108 ,  B01D2251/20 ,  B01D2251/202 ,  B01D2251/204 ,  B01D2251/2062 ,  B01D2251/208 ,  B01D2251/502 ,  B01D2252/103 ,  B01D2257/55 ,  B01D2257/553 ,  B01D2257/556 ,  B01D2257/60 ,  B01D2257/7025 ,  B01D2257/93 ,  B01D2258/0216 ,  B01D2259/818 ,  B01J19/088 ,  B01J2219/0815 ,  B01J2219/0875 ,  B01J2219/0894 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32669 ,  H01J2237/002 ,  H01J2237/335 ,  Y02C20/20 ,  Y02C20/30

Abstract: A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH4, H2O, H2, NF3, SF6, F2, HCl, HF, Cl2, and HBr. Representative condensing abating reagents include, for example, H2, H2O, O2, N2, O3, CO, CO2, NH3, N2O, CH4, and combinations thereof.

公开(公告)号：US20180019108A1

公开(公告)日：2018-01-18

申请号：US15715859

申请日：2017-09-26

Applicant: Applied Materials, Inc.

Inventor： Brian T. WEST ,  Michael S. COX ,  Jeonghoon OH

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/34

CPC classification number: H01J37/3405 ,  C23C14/3407 ,  C23C14/35 ,  H01J37/3423 ,  H01J37/3426 ,  H01J37/3429 ,  H01J37/3435 ,  H01J37/347 ,  H01J37/3491 ,  H01J37/3497

Abstract: Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.

公开(公告)号：US20170133208A1

公开(公告)日：2017-05-11

申请号：US15411711

申请日：2017-01-20

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX ,  Rongping WANG ,  Brian T. WEST ,  Roger M. JOHNSON ,  Colin John DICKINSON

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32844 ,  B01D53/323 ,  B01D2257/55 ,  B01D2257/553 ,  B01D2257/556 ,  B01D2258/0216 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32495 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596 ,  H01J37/32669 ,  H01J37/32825 ,  H01J2237/332 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/02123 ,  H01L21/02274 ,  Y02C20/30

Abstract: Embodiments disclosed herein include a method for abating compounds produced in semiconductor processes. The method includes energizing an abating agent, forming a composition by reacting the energized abating agent with gases exiting a vacuum processing chamber, and flowing the composition through a plurality of holes formed in a cooling plate. By cooling the composition with the cooling plate, damages on the downstream pump are avoided.

公开(公告)号：US20170027049A1

公开(公告)日：2017-01-26

申请号：US15147974

申请日：2016-05-06

Applicant: Applied Materials, Inc.

Inventor： Rongping WANG ,  Jibing ZENG ,  David Muquing HOU ,  Michael S. COX ,  Zheng YUAN ,  James L'HEUREUX

IPC: H05H1/24 ,  H01L21/67 ,  H01J37/32

CPC classification number: H05H1/2406 ,  H01J37/3211 ,  H01J37/32348 ,  H01J2237/022 ,  H01J2237/327 ,  H01J2237/335 ,  H05H1/46 ,  H05H2001/2468 ,  H05H2001/4667 ,  H05H2245/1225 ,  H05H2245/123

Abstract: Embodiments disclosed herein include a plasma source, an abatement system and a vacuum processing system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source includes a dielectric tube and a coil antenna surrounding the tube. The coil antenna includes a plurality of turns, and at least one turn is shorted. Selectively shorting one or more turns of the coil antenna helps reduce the inductance of the coil antenna, allowing higher power to be supplied to the coil antenna that covers more processing volume. Higher power supplied to the coil antenna and larger processing volume lead to an improved DRE.

Abstract translation: 本文公开的实施例包括用于减轻半导体工艺中产生的化合物的等离子体源，减排系统和真空处理系统。 在一个实施例中，等离子体源包括介电管和围绕管的线圈天线。 线圈天线​​包括多个匝，并且至少一匝短路。 选择性地短路一圈或多圈线圈天线有助于降低线圈天线的电感，从而允许更高的功率供应到覆盖更多处理量的线圈天线。 提供给线圈天线的较高功率和较大的处理量导致改进的DRE。

公开(公告)号：US20160133442A1

公开(公告)日：2016-05-12

申请号：US14995187

申请日：2016-01-13

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX ,  Rongping WANG ,  Brian T. WEST ,  Roger M. JOHNSON ,  Colin John DICKINSON

IPC: H01J37/32

CPC classification number: H01J37/32844 ,  B01D53/323 ,  B01D2257/55 ,  B01D2257/553 ,  B01D2257/556 ,  B01D2258/0216 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32495 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596 ,  H01J37/32669 ,  H01J37/32825 ,  H01J2237/332 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/02123 ,  H01L21/02274 ,  Y02C20/30

Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

Abstract translation: 本文公开的实施方案包括减轻半导体工艺中产生的化合物的减排系统。 减排系统包括具有平行于第一板的第一板和第二板的等离子体源。 电极设置在第一和第二板之间，并且外壁设置在围绕电极的第一和第二板之间。 等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。 由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。 在该配置中，产生致密等离子体。

公开(公告)号：US20150262798A1

公开(公告)日：2015-09-17

申请号：US14623419

申请日：2015-02-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Simon Nicholas BINNS ,  Brian T. WEST ,  Ronald Vern SCHAUER ,  Roger M. JOHNSON ,  Michael S. COX

IPC: H01J37/34

CPC classification number: H01J37/3476 ,  H01J37/32935 ,  H01J37/3405 ,  H01J37/3414 ,  H01J37/3479

Abstract: A process chamber includes a chamber body having a chamber lid assembly disposed thereon, one or more monitoring devices coupled to the chamber lid assembly, and one or more antennas disposed adjacent to the chamber lid assembly that are in communication with the one or more monitoring devices.

Abstract translation: 处理室包括室主体，其具有设置在其上的室盖组件，耦合到室盖组件的一个或多个监控装置以及与室盖组件相邻设置的一个或多个与该一个或多个监控装置连通的天线 。

公开(公告)号：US20150255256A1

公开(公告)日：2015-09-10

申请号：US14498920

申请日：2014-09-26

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX ,  Rongping WANG ,  Brian T. WEST ,  Roger M. JOHNSON ,  Colin John DICKINSON

IPC: H01J37/32

CPC classification number: H01J37/32844 ,  B01D53/323 ,  B01D2257/55 ,  B01D2257/553 ,  B01D2257/556 ,  B01D2258/0216 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32495 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596 ,  H01J37/32669 ,  H01J37/32825 ,  H01J2237/332 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/02123 ,  H01L21/02274 ,  Y02C20/30

Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

Abstract translation: 本文公开的实施方案包括减轻半导体工艺中产生的化合物的减排系统。 减排系统包括具有平行于第一板的第一板和第二板的等离子体源。 电极设置在第一和第二板之间，并且外壁设置在围绕电极的第一和第二板之间。 等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。 由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。 在该配置中，产生致密等离子体。

公开(公告)号：US20170316924A1

公开(公告)日：2017-11-02

申请号：US15432590

申请日：2017-02-14

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX ,  Lara HAWRYLCHAK ,  Brian T. WEST

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/34 ,  H01L21/02

CPC classification number: H01J37/3438 ,  C23C14/34 ,  C23C14/564 ,  H01J37/32541 ,  H01J37/32568 ,  H01L21/02164 ,  H01L21/02266

Abstract: Embodiments of the invention generally relate to an anode for a semiconductor processing chamber. More specifically, embodiments described herein relate to a process kit including a shield serving as an anode in a physical deposition chamber. The shield has a cylindrical band, the cylindrical band having a top and a bottom, the cylindrical band sized to encircle a sputtering surface of a sputtering target disposed adjacent the top and a substrate support disposed at the bottom, the cylindrical band having an interior surface. A texture is disposed on the interior surface. The texture has a plurality of features. A shaded area is disposed in the feature wherein the shaded area is not visible to the sputtering target. A small anode surface is disposed in the shaded area.

公开(公告)号：US20170062261A1

公开(公告)日：2017-03-02

申请号：US15353538

申请日：2016-11-16

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX

IPC: H01L21/683

CPC classification number: H01L21/6833

Abstract: Embodiments provided herein generally relate to an electrostatic chuck (ESC). The ESC may comprise a reduced number of stress initiation points, such as holes through the ESC, which may improve the mechanical integrity of the ESC. Electrodes disposed within the ESC may be connected to electrical contacts and a power source via conductive leads, which may be coupled or formed along a peripheral edge of the ESC. Thus, the need for holes formed in the ESC may be reduced or eliminated. In addition, gas channels may be formed on a top surface, a bottom surface, or both. The gas channels may reduce or eliminate the need for a gas channel formed through the ESC and may facilitate heat transfer between a substrate support, the ESC, and a substrate coupled to the ESC.

Abstract translation: 本文提供的实施例通常涉及静电卡盘（ESC）。 ESC可以包括减少数量的应力起始点，例如通过ESC的孔，其可以改善ESC的机械完整性。 设置在ESC内的电极可以经由导电引线连接到电触点和电源，导电引线可以沿着ESC的周边边缘耦合或形成。 因此，可以减少或消除在ESC中形成的孔的需要。 此外，气体通道可以形成在顶表面，底表面或两者上。 气体通道可以减少或消除通过ESC形成的气体通道的需要，并且可以促进衬底支撑件ESC和与ESC联接的衬底之间的热传递。