METHOD OF THERMAL PROCESSING STRUCTURES FORMED ON A SUBSTRATE

    公开(公告)号:US20190139773A1

    公开(公告)日:2019-05-09

    申请号:US16200538

    申请日:2018-11-26

    Abstract: The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

    PHOTONIC ACTIVATION OF REACTANTS FOR SUB-MICRON FEATURE FORMATION USING DEPLETED BEAMS

    公开(公告)号:US20180143537A1

    公开(公告)日:2018-05-24

    申请号:US15861516

    申请日:2018-01-03

    CPC classification number: G03F7/704 G03F7/70375 G03F7/70383

    Abstract: A fine feature formation method and apparatus provide photon induced deposition, etch and thermal or photon based treatment in an area of less than the diameter or cross section of a STED depleted laser beam. At least two STED depleted beams are directed to a reaction location on a substrate where a beam overlap region having an area smaller than the excitation portion of the beams is formed. A reactant or reactants introduced to the reaction region is excited by the combined energy of the excitation portions of the two beams, but not excited outside of the overlap region of the two excitation portions of the beams. A reactant is caused to occur only in the overlap region. The overlap region may be less that 20 nm wide, and less than 1 nm in width, to enable the formation of substrate features, or the change in the substrate, in a small area.

    PULSE TRAIN ANNEALING METHOD AND APPARATUS
    13.
    发明申请
    PULSE TRAIN ANNEALING METHOD AND APPARATUS 审中-公开
    脉冲火焰退火方法和装置

    公开(公告)号:US20170072505A1

    公开(公告)日:2017-03-16

    申请号:US15353279

    申请日:2016-11-16

    Abstract: The present invention generally describes apparatuses and methods used to perform an annealing process on desired regions of a substrate. In one embodiment, pulses of electromagnetic energy are delivered to a substrate using a flash lamp or laser apparatus. The pulses may be from about 1 nsec to about 10 msec long, and each pulse has less energy than that required to melt the substrate material. The interval between pulses is generally long enough to allow the energy imparted by each pulse to dissipate completely. Thus, each pulse completes a micro-anneal cycle. The pulses may be delivered to the entire substrate at once, or to portions of the substrate at a time. Further embodiments provide an apparatus for powering a radiation assembly, and apparatuses for detecting the effect of pulses on a substrate.

    Abstract translation: 本发明总体上描述了用于对衬底的期望区域进行退火处理的设备和方法。 在一个实施例中,使用闪光灯或激光装置将电磁能量的脉冲传送到基板。 脉冲可以是约1nsec至约10msec长,并且每个脉冲具有比熔化基底材料所需的能量更少的能量。 脉冲之间的间隔通常足够长以允许由每个脉冲施加的能量完全消散。 因此,每个脉冲完成微退火循环。 脉冲可以一次被输送到整个基板,或者一次被传送到基板的一部分。 另外的实施例提供了用于为辐射组件供电的装置,以及用于检测脉冲在衬底上的影响的装置。

    CRYSTALLIZATION METHODS
    14.
    发明申请

    公开(公告)号:US20160293414A1

    公开(公告)日:2016-10-06

    申请号:US15186499

    申请日:2016-06-19

    CPC classification number: H01L21/02686 H01L21/02521 H01L21/268

    Abstract: Apparatus and methods of treating a substrate with an amorphous semiconductor layer, or a semiconductor layer having small crystals, to form large crystals in the substrate are described. A treatment area of the substrate is identified and melted using a progressive melting process of delivering pulsed energy to the treatment area. The treatment area is then recrystallized using a progressive crystallization process of delivering pulsed energy to the area. The pulsed energy delivered during the progressive crystallization process is selected to convert the small crystals into large crystals as the melted material freezes.

    APPARATUS AND METHODS FOR PULSED PHOTO-EXCITED DEPOSITION AND ETCH
    15.
    发明申请
    APPARATUS AND METHODS FOR PULSED PHOTO-EXCITED DEPOSITION AND ETCH 审中-公开
    用于脉冲照射沉积和蚀刻的装置和方法

    公开(公告)号:US20150368800A1

    公开(公告)日:2015-12-24

    申请号:US14839554

    申请日:2015-08-28

    Inventor: Stephen MOFFATT

    Abstract: Embodiments of the invention provide methods for processing a substrate within a processing chamber. In one embodiment, the method comprises providing a precursor gas mixture into the processing chamber, the precursor gas mixture comprising a deposition precursor gas and an etch precursor gas, subjecting the precursor gas mixture to a thermal energy from a heat source to deposit a material layer on a surface of the substrate, wherein the thermal energy is below the minimum required for pyrolysis of the etch precursor gas, and after the material layer is formed on the surface of the substrate, subjecting the precursor gas mixture to a photon energy from a radiation source, the photon energy having a wavelength and a power level selected to promote photolytic dissociation of the etch precursor gas over the deposition precursor gas and etch a portion of the material layer from the surface of the substrate.

    Abstract translation: 本发明的实施例提供了在处理室内处理衬底的方法。 在一个实施方案中,该方法包括将前体气体混合物提供到处理室中,前体气体混合物包含沉积前体气体和蚀刻前体气体,使来自热源的前体气体混合物经受热能以沉积材料层 在所述衬底的表面上,其中所述热能低于所述蚀刻前体气体的热解所需的最小值,并且在所述衬底表面上形成所述材料层之后,使所述前体气体混合物经受来自辐射的光子能量 源,具有选择波长和功率电平的光子能量以促进蚀刻前体气体在沉积前体气体上的光解离解,并从衬底的表面蚀刻材料层的一部分。

    PHOTONIC ACTIVATION OF REACTANTS FOR SUB-MICRON FEATURE FORMATION USING DEPLETED BEAMS
    16.
    发明申请
    PHOTONIC ACTIVATION OF REACTANTS FOR SUB-MICRON FEATURE FORMATION USING DEPLETED BEAMS 有权
    用于使用分离的贝壳的亚微米特征形成的反应物的光子活化

    公开(公告)号:US20150042973A1

    公开(公告)日:2015-02-12

    申请号:US14452200

    申请日:2014-08-05

    CPC classification number: G03F7/704 G03F7/70375 G03F7/70383

    Abstract: A fine feature formation method and apparatus provide photon induced deposition, etch and thermal or photon based treatment in an area of less than the diameter or cross section of a STED depleted laser beam. At least two STED depleted beams are directed to a reaction location on a substrate where a beam overlap region having an area smaller than the excitation portion of the beams is formed. A reactant or reactants introduced to the reaction region is excited by the combined energy of the excitation portions of the two beams, but not excited outside of the overlap region of the two excitation portions of the beams. A reactant is caused to occur only in the overlap region. The overlap region may be less that 20 nm wide, and less than 1 nm in width, to enable the formation of substrate features, or the change in the substrate, in a small area.

    Abstract translation: 精细的特征形成方法和装置在小于STED耗尽的激光束的直径或横截面的区域中提供光子诱导的沉积,蚀刻和基于热或光子的处理。 至少两个STED耗尽的光束被引导到衬底上的反应位置,其中形成了具有小于光束的激发部分的面积的光束重叠区域。 引入到反应区域的反应物被两个光束的激发部分的组合能量激发,但不被激发在光束的两个激发部分的重叠区域外部。 使反应物仅在重叠区域中发生。 重叠区域可以小于20nm宽,并且宽度小于1nm,以便在小的区域中形成衬底特征或衬底的变化。

    APPARATUS AND METHODS FOR PHOTO-EXCITATION PROCESSES

    公开(公告)号:US20180274099A1

    公开(公告)日:2018-09-27

    申请号:US15359090

    申请日:2016-11-22

    Inventor: Stephen MOFFATT

    Abstract: Embodiments of the disclosure provide a method and apparatus for depositing a layer on a substrate. In one embodiment, the method includes exposing a surface of the substrate disposed within a processing chamber to a fluid precursor, directing an electromagnetic radiation generated from a radiation source to a light scanning unit such that the electromagnetic radiation is deflected and scanned across the surface of the substrate upon which a material layer is to be formed, and initiating a deposition process with the electromagnetic radiation having a wavelength selected for photolytic dissociation of the fluid precursor to deposit the material layer onto the surface of the substrate. The radiation source may comprise a laser source, a bright light emitting diode (LED) source, or a thermal source. In one example, the radiation source is a fiber laser producing output in the ultraviolet (UV) wavelength range.

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