公开(公告)号：US11276569B2

公开(公告)日：2022-03-15

申请号：US16515230

申请日：2019-07-18

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Tza-Jing Gung ,  Masaki Ogata ,  Yusheng Zhou ,  Xinhai Han ,  Deenesh Padhi ,  Juan Carlos Rocha ,  Amit Kumar Bansal ,  Mukund Srinivasan

IPC: H01L21/02

Abstract: Embodiments described herein relate to manufacturing layer stacks of oxide/nitride (ON) layers with minimized in-plane distortion (IPD) and lithographic overlay errors. A method of forming a layer stack ON layers includes flowing a first silicon-containing gas, an oxygen-containing gas, and a first dilution gas. A RF power is symmetrically applied to form a first material layer of SiO2. A second silicon-containing gas, a nitrogen-containing gas, and a second dilution gas are flowed. A second RF power is symmetrically applied to form a second material layer of Si3N4. The flowing the first silicon-containing gas, the oxygen-containing gas, and the first dilution gas, the symmetrically applying the first RF power, the flowing the second silicon-containing gas, the nitrogen-containing gas, and the second dilution gas, and the symmetrically applying the second RF power is repeated until a desired number of first material layers and second material layers make up a layer stack.

公开(公告)号：US11245022B2

公开(公告)日：2022-02-08

申请号：US16876276

申请日：2020-05-18

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Karla M. Bernal Ramos ,  Luping Li ,  Shih Chung Chen ,  Jacqueline S. Wrench ,  Yixiong Yang ,  Steven C. H. Hung ,  Srinivas Gandikota ,  Naomi Yoshida ,  Lin Dong

IPC: H01L29/51 ,  H01L29/40 ,  H01L29/49

Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).

公开(公告)号：US11075276B2

公开(公告)日：2021-07-27

申请号：US16594596

申请日：2019-10-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Yongjing Lin ,  Shih Chung Chen ,  Naomi Yoshida ,  Lin Dong ,  Liqi Wu ,  Rongjun Wang ,  Steven Hung ,  Karla Bernal Ramos ,  Yixiong Yang ,  Wei Tang ,  Sang-Ho Yu

IPC: H01L29/49 ,  H01L29/40 ,  H01L21/285 ,  H01L21/02

Abstract: Methods and apparatus for forming a semiconductor structure such as an NMOS gate electrode are described. Methods may include depositing a first capping layer having a first surface atop a first surface of a high-k dielectric layer; and depositing at least one metal layer having a first surface atop the first surface of the first capping layer, wherein the at least one metal layer includes titanium aluminum silicide material. Some methods include removing an oxide layer from the first surface of the first capping layer by contacting the first capping layer with metal chloride in an amount sufficient to remove an oxide layer. Some methods for depositing a titanium aluminum silicide material are performed by an atomic layer deposition process performed at a temperature of 350 to 400 degrees Celsius.

公开(公告)号：US20250081593A1

公开(公告)日：2025-03-06

申请号：US18459582

申请日：2023-09-01

Applicant: Applied Materials ,Inc

Inventor： Yongjing Lin ,  Zhihui Liu ,  Sourav Garg ,  Lu Li ,  Haoming Yan ,  Haoyan Sha ,  Bhaskar Jyoti Bhuyan ,  Shih Chung Chen ,  Janardhan Devrajan ,  Srinivas Gandikota

IPC: H01L21/8238 ,  H01L21/02 ,  H01L27/092 ,  H01L29/08 ,  H01L29/423

Abstract: Methods of manufacturing electronic devices, such as transistors (negative metal-oxide-semiconductor (NMOS) transistors (e.g., an N-metal stack) and positive metal-oxide-semiconductor (PMOS) transistors (e.g., a P-metal stack)) are described. Embodiments of the disclosure are directed to methods of improving PMOS transistor performance by inhibiting N-metal layer growth. The present disclosure provides two types of processes to reduce or inhibit N-metal layer growth. The disclosure provides methods which include forming a self-assembled monolayer (SAM) on the metal surface (e.g., titanium nitride (TiN)) of the PMOS, and methods which include forming a silicon-containing layer such as silicon oxide (SiOx) on the TiN surface. These two types of processes significantly reduce or inhibit the subsequent growth of an N-metal layer, such as titanium aluminum carbide (TiAlC), on the TiN surface of the PMOS.

公开(公告)号：US11996455B2

公开(公告)日：2024-05-28

申请号：US18130201

申请日：2023-04-03

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Karla M Bernal Ramos ,  Shih Chung Chen ,  Yixiong Yang ,  Lin Dong ,  Steven C. H. Hung ,  Srinivas Gandikota

IPC: H01L29/40 ,  H01L21/02 ,  H01L21/28 ,  H01L29/51 ,  H01L29/78

CPC classification number: H01L29/408 ,  H01L21/02153 ,  H01L21/0228 ,  H01L21/28158 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7851

Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).

公开(公告)号：US20230253466A1

公开(公告)日：2023-08-10

申请号：US18130201

申请日：2023-04-03

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Karla M Bernal Ramos ,  Shih Chung Chen ,  Yixiong Yang ,  Lin Dong ,  Steven C.H. Hung ,  Srinivas Gandikota

IPC: H01L29/40 ,  H01L29/51 ,  H01L29/78 ,  H01L21/02 ,  H01L21/28

CPC classification number: H01L29/408 ,  H01L21/0228 ,  H01L21/02153 ,  H01L21/28158 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7851

Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAIN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAIC).

公开(公告)号：US20230193463A1

公开(公告)日：2023-06-22

申请号：US18065742

申请日：2022-12-14

Applicant: Applied Materials, Inc.

Inventor： Shashidhara Patel H B ,  Madhuri Kalva ,  Sreenivasa Rao Nunna ,  Shih Chung Chen ,  Yongjing Lin ,  Bin Cao

IPC: C23C16/455 ,  H01J37/32

CPC classification number: C23C16/45565 ,  H01J37/32458 ,  H01J37/32449 ,  C23C16/45544

Abstract: Gas distribution apparatuses, e.g., showerheads, comprise passages having a first conical bore section, a small bore section, and a second conical bore section. The first conical bore sections comprise a first non-perpendicular wall angle relative to a back surface of a faceplate. The second conical bore sections comprise a second non-perpendicular angle to a front surface of the faceplate. The conical sections including non-perpendicular angles are effective to mitigate and/or eliminate changes in flow parameters through the passages after bead blast processes.

公开(公告)号：US11289579B2

公开(公告)日：2022-03-29

申请号：US17034116

申请日：2020-09-28

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Karla M Bernal Ramos ,  Shih Chung Chen ,  Yixiong Yang ,  Lin Dong ,  Steven C. H. Hung ,  Srinivas Gandikota

IPC: H01L29/40 ,  H01L29/51 ,  H01L29/78 ,  H01L21/02 ,  H01L21/28

Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).

公开(公告)号：US20210134972A1

公开(公告)日：2021-05-06

申请号：US17089047

申请日：2020-11-04

Applicant: Applied Materials, Inc.

Inventor： Yixiong Yang ,  Jacqueline S. Wrench ,  Srinivas Gandikota ,  Yongjing Lin ,  Steven C.H. Hung ,  Shih Chung Chen ,  Haoyan Sha ,  Chi-Chou Lin

IPC: H01L29/49 ,  H01L29/51 ,  H01L21/28

Abstract: Metal gate stacks and integrated methods of forming metal gate stacks are disclosed. Some embodiment comprise MoN as a PMOS work function material. Some embodiments comprise TiSiN as a high-κ capping layer. Some embodiments provide improved PMOS bandedge performance. Some embodiments provide improved PMOS bandedge performance with reduced EOT penalty.

公开(公告)号：US20210098581A1

公开(公告)日：2021-04-01

申请号：US17034116

申请日：2020-09-28

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Karla M. Bernal Ramos ,  Shih Chung Chen ,  Yixiong Yang ,  Lin Dong ,  Steven C.H. Hung ,  Srinivas Gandikota

IPC: H01L29/40 ,  H01L29/51 ,  H01L21/28 ,  H01L21/02 ,  H01L29/78

Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-K dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).