公开(公告)号：US20240162037A1

公开(公告)日：2024-05-16

申请号：US18410333

申请日：2024-01-11

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yoshimoto ,  Jun Yoshikawa ,  Toshihisa Nozawa

IPC: H01L21/02 ,  H01L21/285

CPC classification number: H01L21/0217 ,  H01L21/0228 ,  H01L21/28518

Abstract: Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50 Pa.

公开(公告)号：US11929251B2

公开(公告)日：2024-03-12

申请号：US17103938

申请日：2020-11-24

Applicant: ASM IP Holding B.V.

Inventor： Toshihisa Nozawa

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/458 ,  C23C16/505 ,  H01J37/32 ,  H01L21/683 ,  H01L23/00

CPC classification number: H01L21/02274 ,  C23C16/34 ,  C23C16/40 ,  C23C16/4586 ,  C23C16/505 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32568 ,  H01J37/32715 ,  H01L21/6833 ,  H01L23/562 ,  H01J2237/2007 ,  H01J2237/20235 ,  H01J2237/332

Abstract: Examples of a substrate processing apparatus includes a chamber, an upper cover provided inside the chamber, an electrostatic chuck which includes an annular portion of a dielectric body and an embedded electrode embedded into the annular portion, the electrostatic chuck being provided inside the chamber, and a plasma unit configured to generate plasma in a region below the upper cover and the electrostatic chuck, wherein the annular portion includes an annular first upper surface located immediately below the upper cover, and a second upper surface located immediately below the upper cover and surrounding the first upper surface, the second upper surface having a height higher than a height of the first upper surface.

公开(公告)号：US11908684B2

公开(公告)日：2024-02-20

申请号：US17944583

申请日：2022-09-14

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yoshimoto ,  Jun Yoshikawa ,  Toshihisa Nozawa

IPC: H01L21/02 ,  H01L21/285

CPC classification number: H01L21/0217 ,  H01L21/0228 ,  H01L21/28518

Abstract: Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50 Pa.

公开(公告)号：US20190259612A1

公开(公告)日：2019-08-22

申请号：US15900425

申请日：2018-02-20

Applicant: ASM IP Holding B.V.

Inventor： Toshihisa Nozawa ,  Dai Ishikawa ,  Tomohiro Kubota

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/027 ,  H01L21/02

Abstract: A method of spacer-defined direct patterning in semiconductor fabrication includes: providing a photoresist structure having a target width of lines; trimming the photoresist structures such that a width of each trimmed photoresist structure is smaller than the target width; depositing an oxide film on the template, thereby entirely covering with the oxide film an exposed top surface of the template and the trimmed photoresist structures; etching the oxide film-covered template to remove an unwanted portion of the oxide film without removing the trimmed photoresist structures so as to form vertical spacers isolated from each other, each spacer substantially maintaining the target width and being constituted by the trimmed photoresist structures and a vertical portion of the oxide film covering sidewalls of the trimmed photoresist structures; and etching the spacer-formed template to transfer a pattern constituted by the spacers to the template.

公开(公告)号：US10262865B2

公开(公告)日：2019-04-16

申请号：US15488318

申请日：2017-04-14

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Toshihisa Nozawa

IPC: H01L21/285 ,  H01L21/02 ,  C23C16/455 ,  C23C16/505 ,  C23C16/44 ,  C23C16/06 ,  C23C16/34 ,  H01J37/32

Abstract: An example method for manufacturing a semiconductor device includes forming a nitride, carbide, or metal film on a substrate in a chamber using PE-ALD, Pulse-PE-CVD or PE-CVD, purging an interior of the chamber, forming an oxide film on the substrate in the chamber using PE-ALD, Pulse-PE-CVD or PE-CVD, and supplying a reducing gas into the chamber to create a reduction atmosphere and purging the interior of the chamber. The forming of the nitride film, carbide, or metal, purging, forming an oxide film, and supplying the reducing gas may be repeated a plurality of times.

公开(公告)号：US09896762B1

公开(公告)日：2018-02-20

申请号：US15382141

申请日：2016-12-16

Applicant: ASM IP HOLDING B.V.

Inventor： Toshihisa Nozawa

IPC: C23C16/50 ,  C23C16/455 ,  H01J37/32 ,  C23C16/458 ,  C23C16/44

CPC classification number: C23C16/45525 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4412 ,  C23C16/458 ,  C23C16/4583 ,  C23C16/50 ,  C23C16/5096 ,  C23C16/56 ,  H01J37/32091 ,  H01J37/32532 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32834 ,  H01J2237/3321 ,  H01J2237/334

Abstract: A method of forming layers of film on a patterned surface, including depositing a film on the patterned surface during a PEALD/PPECVD process in a processing apparatus and etching the film during the etching process in the processing apparatus.

公开(公告)号：US20230250531A1

公开(公告)日：2023-08-10

申请号：US18130959

申请日：2023-04-05

Applicant: ASM IP Holding B.V.

Inventor： Tomohiro Kubota ,  Mitsuya Utsuno ,  Toshihisa Nozawa ,  Seiji Samukawa ,  Hua Hsuan Chen

IPC: C23C16/455 ,  H05H3/02 ,  C23C16/40 ,  C23C16/48

CPC classification number: C23C16/45536 ,  H05H3/02 ,  C23C16/402 ,  C23C16/486 ,  C23C16/45553

Abstract: Methods of forming structures using a neutral beam, structures formed using a neutral beam, and reactor systems for forming the structures are disclosed. The neutral beam can be used to provide activated species during deposition of a layer and/or to provide activated species to treat a deposited layer.

公开(公告)号：US20230005734A1

公开(公告)日：2023-01-05

申请号：US17944583

申请日：2022-09-14

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yoshimoto ,  Jun Yoshikawa ,  Toshihisa Nozawa

IPC: H01L21/02 ,  H01L21/285

Abstract: Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50 Pa.

公开(公告)号：US20210066075A1

公开(公告)日：2021-03-04

申请号：US17003919

申请日：2020-08-26

Applicant: ASM IP Holding B.V.

Inventor： Yan Zhang ,  Toshihisa Nozawa

IPC: H01L21/02 ,  C23C16/455

Abstract: Methods of forming structures having dielectric films with improved properties, such as, for example, improved elastic modulus and/or dielectric constant are disclosed. Exemplary films can be formed using a cyclic deposition process. Exemplary methods use activated species to cleave (e.g., symmetric-structured) precursor molecules to form the high quality dielectric layers.

公开(公告)号：US12129548B2

公开(公告)日：2024-10-29

申请号：US18130959

申请日：2023-04-05

Applicant: ASM IP Holding B.V.

Inventor： Tomohiro Kubota ,  Mitsuya Utsuno ,  Toshihisa Nozawa ,  Seiji Samukawa ,  Hua Hsuan Chen

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/48 ,  H05H3/02

CPC classification number: C23C16/45536 ,  C23C16/402 ,  C23C16/45553 ,  C23C16/486 ,  H05H3/02

Abstract: Methods of forming structures using a neutral beam, structures formed using a neutral beam, and reactor systems for forming the structures are disclosed. The neutral beam can be used to provide activated species during deposition of a layer and/or to provide activated species to treat a deposited layer.