公开(公告)号：US20250034714A1

公开(公告)日：2025-01-30

申请号：US18784060

申请日：2024-07-25

Applicant: ASM IP Holding B.V.

Inventor： Wentao Wang ,  Peipei Gao ,  Kishor Patil ,  Aniket Chitale ,  Fan Gao ,  Xing Lin ,  Alexandros Demos ,  Amir Kajbafvala ,  Emesto Suarez ,  Arun Murali ,  Caleb Miskin ,  Bubesh Babu Jotheeswaran

IPC: C23C16/46 ,  C23C16/06 ,  C23C16/458 ,  C30B25/10 ,  C30B25/12 ,  C30B29/52 ,  H01L21/02

Abstract: A reflector includes a reflector body having a slotted surface, a planar surface, and an ellipsoidal surface. The planar surface is opposite the slotted surface and is separated from the slotted surface by a thickness of the reflector body. The ellipsoidal surface is offset from the planar surface, is opposite the slotted surface and separated from the slotted surface by the thickness of the reflector body and spans the slotted surface of the reflector body. The ellipsoidal surface defines an elliptical profile that is orthogonal relative to the planar surface to concentrate heat flux at a distal focus of the elliptical profile using electromagnetic radiation reflected by the ellipsoidal surface of the reflector body. Semiconductor processing systems and material layer deposition methods are also described.

公开(公告)号：US20240071804A1

公开(公告)日：2024-02-29

申请号：US18238573

申请日：2023-08-28

Applicant: ASM IP Holding B.V.

Inventor： Peipei Gao ,  Wentao Wang ,  Han Ye ,  Kai Zhou ,  Fan Gao ,  Xing Lin

IPC: H01L21/687 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/68735 ,  H01L21/0262 ,  H01L21/67017 ,  H01L21/67248

Abstract: Methods, systems, and assemblies suitable for gas-phase processes are disclosed. An exemplary assembly includes a susceptor ring and at least one injector tube. The injector tube can be disposed within the susceptor ring to provide a gas to a peripheral region of a substrate. Methods, systems, and assemblies can be used to obtain desired (e.g. composition and/or thickness) profiles of material on a substrate surface.

公开(公告)号：US20220298672A1

公开(公告)日：2022-09-22

申请号：US17697107

申请日：2022-03-17

Applicant: ASM IP Holding B.V.

Inventor： Hichem M'Saad ,  Alexandros Demos ,  Xing Lin ,  Junwei Su ,  Matthew Goodman ,  Daw Gen Lim ,  Shujin Huang ,  Rutvij Naik

IPC: C30B25/16 ,  H01L21/66 ,  C30B25/10 ,  C30B25/12 ,  C30B23/06 ,  C23C16/52 ,  C23C16/46 ,  C23C14/54 ,  F27B17/00 ,  H05B3/00 ,  H05B1/02 ,  G01J5/00

Abstract: A method of operating a reactor system to provide wafer temperature gradient control is provided. The method includes operating a center temperature sensor, a middle temperature sensor, and an edge temperature sensor to sense a temperature of a center zone of a wafer on a susceptor in reaction chamber of the reactor system, to sense a temperature of a middle zone of the wafer, and to sense a temperature of an edge zone of the wafer. The temperatures of the center, middle, and edge zones of the wafer are processed with a controller to generate control signals based on a predefined temperature gradient for the wafer. First, second, and third sets of heater lamps are operated based on the temperature of the center, middle, and edge zones to heat the center, the middle, and the edge zone of the wafer. Reactor systems are also described.

公开(公告)号：US20240425986A1

公开(公告)日：2024-12-26

申请号：US18746189

申请日：2024-06-18

Applicant: ASM IP Holding B.V.

Inventor： Junwei Su ,  Jiwen Xiang ,  Zhizhong Chen ,  Yang Wang ,  Xing Lin

IPC: C23C16/455 ,  C23C16/52

Abstract: Methods and apparatuses for decoupling the tuning of cross-substrate thickness variation and cross-substrate resistance variation in a gas injection system are described. A controller in a gas injection system may deposit, via control of the plurality of first mass flow controllers (MFCs) and the plurality of second MFCs, a material layer deposited on a substrate. The controller may adjust, via control of the plurality of first MFCs, a cross-substrate thickness variation of the material layer. The controller may adjust, via control of the plurality of second MFCs and independent of the cross-substrate thickness variation, cross-substrate resistivity variation of the material layer.

公开(公告)号：USD1031676S1

公开(公告)日：2024-06-18

申请号：US29760951

申请日：2020-12-04

Applicant: ASM IP HOLDING B.V.

Designer： Peipei Gao ,  Wentao Wang ,  Xing Lin ,  Han Ye ,  Ion Hong Chao ,  Siyao Luan ,  Alexandros Demos ,  Fan Gao

Abstract: FIG. 1 is a front perspective view of a combined susceptor, support, and lift system;
FIG. 2 is a back perspective view thereof;
FIG. 3 is a side view thereof;
FIG. 4 is a cross-sectional view taken along line 4-4 as indicated in FIG. 3;
FIG. 5 is an enlarged view of FIG. 4 shown without broken line environmental subject matter for clarity of the claimed subject matter;
FIG. 6 is a top perspective view of the lift pin thereof;
FIG. 7 is a bottom perspective view of the lift pin thereof;
FIG. 8 is a front view of the lift pin thereof;
FIG. 9 is a back view of the lift pin thereof;
FIG. 10 is a left view of the lift pin thereof;
FIG. 11 is a right view of the lift pin thereof;
FIG. 12 is a top view of the lift pin thereof; and,
FIG. 13 is a bottom view of the lift pin thereof.
The dash-dash broken lines within the shaded area and the dash-dash broken lines in FIGS. 1-13 depicting various components of the susceptor, support, and lift system are for the purpose of illustrating environmental subject matter and portions of the article that form no part of the claimed design. The dot-dash broken line in FIG. 3 is for the purpose of defining the cross-sectional view shown in FIG. 4.

公开(公告)号：US20240175130A1

公开(公告)日：2024-05-30

申请号：US18523021

申请日：2023-11-29

Applicant: ASM IP Holding B.V.

Inventor： Hichem M’Saad ,  Ivo Johannes Raaijmakers ,  Xing Lin ,  Wentao Wang ,  Herbert Terhorst

IPC: C23C16/455 ,  C23C16/44 ,  H01L21/67 ,  H01L21/677

CPC classification number: C23C16/45546 ,  C23C16/4412 ,  C23C16/45553 ,  C23C16/45565 ,  H01L21/67098 ,  H01L21/67201 ,  H01L21/67248 ,  H01L21/67742

Abstract: Methods and systems for growing silicon carbide epitaxial layers are described. In one example, a reactor system with multiple reactor modules may include a heating load/lock chamber and a cooling load/lock chamber. In another example, a reactor may be heated by separate sets of coils inductively heating a susceptor, which heats graphite near one or more wafers. Multiple pyrometers may measure the temperature of the graphite walls at different locations. Based on temperature differences and/or temperature gradients, a temperature controller may adjust power provided to one or more sets of coils. In yet another example, separations between a wafer carrier and a wafer may be adjusted.

公开(公告)号：US20240112946A1

公开(公告)日：2024-04-04

申请号：US18476067

申请日：2023-09-27

Applicant: ASM IP Holding, B.V.

Inventor： Bradley Wayne Evans ,  Shujin Huang ,  Junwei Su ,  Loc Tran ,  Xing Lin ,  Alexandros Demos

IPC: H01L21/687 ,  C23C16/458

CPC classification number: H01L21/68742 ,  C23C16/4585

Abstract: A lift pin actuator includes a castellated annulus, a first arm, a second arm, and a pin pad. The annulus arranged along a rotation axis and has a first merlon and a second merlon circumferentially separated by a crenel. The first arm is connected to the first merlon and extends outward from the annulus, the second arm is connected to the second merlon and extends outward from the annulus, and the second arm is circumferentially spaced from the first arm by a radial gap. The pin pad is connected to the annulus by the first arm and the second arm, is radially spaced from the annulus by the radial gap, and radially overlaps the crenel to nest a support member within the lift pin actuator during translation of the lift pin actuator along the rotation axis relative to the support member. Process kits, semiconductor processing systems, methods of making lift pin actuators and related material layer deposition methods are also described.

公开(公告)号：US20230203706A1

公开(公告)日：2023-06-29

申请号：US18086734

申请日：2022-12-22

Applicant: ASM IP Holding B.V.

Inventor： Alexandros Demos ,  Hichem M'Saad ,  Xing Lin ,  Caleb Miskin ,  Shivaji Peddeti ,  Amir Kajbafvala

IPC: C30B25/14 ,  C30B25/12 ,  C30B25/16 ,  C30B25/18 ,  C30B29/06 ,  C30B29/08

CPC classification number: C30B25/14 ,  C30B25/12 ,  C30B25/165 ,  C30B25/186 ,  C30B29/06 ,  C30B29/08

Abstract: A reactor system may comprise a first reaction chamber and a second reaction chamber. The first and second reaction chambers may each comprise a reaction space enclosed therein, a susceptor disposed within the reaction space, and a fluid distribution system in fluid communication with the reaction space. The susceptor in each reaction chamber may be configured to support a substrate. The reactor system may further comprise a first reactant source, wherein the first reaction chamber and the second reaction chamber are fluidly coupled to the first reactant source at least partially by a first reactant shared line. The reactor system may be configured to deliver a first reactant from the first reactant source to the first reaction chamber and a second reaction chamber through the first reactant shared line.

公开(公告)号：US20230128390A1

公开(公告)日：2023-04-27

申请号：US18048099

申请日：2022-10-20

Applicant: ASM IP Holding, B.V.

Inventor： Shujin Huang ,  Junweli Su ,  Wentao Wang ,  Zhizhong Chen ,  Xing Lin ,  Jiwen Xiang

IPC: H01L21/687

Abstract: A substrate support includes a disc body with an upper surface and an opposite lower surface arranged along a rotation axis. The upper surface has a circular concave portion extending about the rotation axis, an annular ledge portion extending circumferentially about the concave portion, and an annular rim portion extending circumferentially about the ledge portion connecting to the concave portion of the disc body by the ledge portion of the disc body. The ledge portion slopes downward radially outward from the rotation axis to seat a substrate on the disc body such that a beveled edge of the substrate is cantilevered above the ledge portion of the upper surface of the disc body. Substrate support assemblies, semiconductor processing systems, and film deposition methods are also described.

公开(公告)号：US20220189804A1

公开(公告)日：2022-06-16

申请号：US17549311

申请日：2021-12-13

Applicant: ASM IP Holding B.V.

Inventor： Siyao Luan ,  Peipei Gao ,  Xing Lin ,  Alexandros Demos ,  Kishor Patil

IPC: H01L21/67 ,  C23C16/458 ,  C23C16/455

Abstract: A fixture includes a frame, a leveling plate, a bracket, and a laser profiler. The frame is arranged for fixation above a reaction chamber arranged to deposit a film onto a substrate. The leveling plate is supported on the frame. The bracket is supported on the leveling plate. The laser profiler is suspended from the bracket, overlays the reaction chamber, and has a field of view that extends through the leveling plate and the frame to determine position of a target within the reaction chamber. Semiconductor processing systems and methods of determining position of targets within reaction chambers in semiconductor processing systems are also described.