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    THIN FILM DEPOSITION APPARATUS
    11.
    发明申请
    THIN FILM DEPOSITION APPARATUS 审中-公开
    薄膜沉积装置

    公开(公告)号：US20170009347A1

    公开(公告)日：2017-01-12

    申请号：US15202468

    申请日：2016-07-05

    Applicant: ASM IP Holding B.V.

    Inventor： Hyun Soo Jang ,  Dae Youn Kim ,  Jeong Ho Lee ,  Young Hoon Kim ,  Seung Seob Lee ,  Woo Chan Kim

    IPC: C23C16/505

    Abstract: A reaction chamber includes a reactor wall, a susceptor contacting the reactor wall to define a reaction space and a gas flow control device and a showerhead member stacked between the reactor wall and the susceptor. The showerhead member includes a gas channel and a showerhead. Penetration holes are formed through a protruding lateral portion of the gas flow control device, and the reactor wall and a lateral portion of the showerhead member are spaced apart from each other to form a gas discharge path. Gas remaining in the gas discharge path is discharged through the penetration holes and a gas outlet formed in an upper portion of the reactor wall. The reaction chamber provides a reaction space and the gas discharge path from which unnecessary regions are removed to rapidly change gases from one to another, and thus atomic layer deposition may be performed with high efficiency and productivity.

    Abstract translation: 反应室包括反应器壁，与反应器壁接触以限定反应空间的基座和气体流量控制装置以及堆叠在反应器壁和基座之间的喷头构件。 喷头构件包括气体通道和喷头。 渗透孔通过气体流量控制装置的突出侧面部分形成，并且反应器壁和喷头构件的侧部彼此间隔开以形成气体排出路径。 气体排出路径中残留的气体通过贯通孔排出，形成在反应器壁的上部的气体出口。 反应室提供反应空间和气体排出路径，从其中除去不需要的区域以迅速地将气体从一个换成另一个，因此可以以高效率和高生产率进行原子层沉积。

    Method of forming thin film
    14.
    发明授权
    Method of forming thin film 有权

    公开(公告)号：US10395921B2

    公开(公告)日：2019-08-27

    申请号：US15080004

    申请日：2016-03-24

    Applicant: ASM IP Holding B.V.

    Inventor： Young Hoon Kim ,  Dae Youn Kim ,  Seung Woo Choi ,  Hyung Wook Noh ,  Yong Min Yoo ,  Hak Joo Lee

    IPC: C23C16/455 ,  H01L21/02 ,  C23C16/52 ,  C23C16/458

    Abstract: Provided is a method of forming a thin film having a target thickness T on a substrate by an atomic layer deposition (ALD) method. The method includes n processing conditions each having a film growth rate that is different from the others, and determining a1 to an that are cycles of a first processing condition to an n-th processing condition so that a value of |T−(a1×G1+a2×G2+ . . . +an×Gn)| is less than a minimum value among G1, G2, . . . , and Gn, where n is 2 or greater integer, G1, . . . , and Gn respectively denote a first film growth rate that is a film growth rate of the first processing condition, . . . and an n-th film growth rate that is a film growth rate of the n-th processing condition, and the film growth rate denotes a thickness of a film formed per a unit cycle in each of the processing conditions. The film forming method may precisely and uniformly control a thickness of the thin film when an ALD is performed.

    Method of depositing thin film
    18.
    发明授权
    Method of depositing thin film 有权
    沉积薄膜的方法

    公开(公告)号：US09564311B2

    公开(公告)日：2017-02-07

    申请号：US14526811

    申请日：2014-10-29

    Applicant: ASM IP Holding B.V.

    Inventor： Young Hoon Kim ,  Dae Youn Kim ,  Sang Wook Lee

    IPC: H01L21/02 ,  C23C16/30 ,  C23C16/40 ,  C23C16/452 ,  C23C16/455

    CPC classification number: H01L21/02274 ,  C23C16/401 ,  C23C16/402 ,  C23C16/452 ,  C23C16/45527 ,  C23C16/45542 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/0228

    Abstract: A method of depositing a thin film includes: repeating a first gas supply cycle a first plurality of times, the first gas supply cycle including supplying a source gas to a reaction space; supplying first plasma while supplying a reactant gas to the reaction space; repeating a second gas supply cycle a second plurality of times, the second gas supply cycle including supplying the source gas to the reaction space; and supplying second plasma while supplying the reactant gas to the reaction space, wherein the supplying of the first plasma includes supplying remote plasma, and the supplying of the second plasma includes supplying direct plasma.

    Abstract translation: 沉积薄膜的方法包括：首先重复第一气体供应循环，第一气体供应循环包括将源气体供应到反应空间; 供应第一等离子体，同时向反应空间供应反应气体; 重复第二次气体供给循环第二次，第二气体供应循环包括将源气体供应到反应空间; 以及在将所述反应气体供应到所述反应空间的同时供给第二等离子体，其中所述第一等离子体的供给包括供给远程等离子体，所述第二等离子体的供给包括供给直接等离子体

    DEPOSITION APPARATUS
    20.
    发明申请
    DEPOSITION APPARATUS 审中-公开
    沉积装置

    公开(公告)号：US20140109832A1

    公开(公告)日：2014-04-24

    申请号：US14057160

    申请日：2013-10-18

    Applicant: ASM IP Holding B.V.

    Inventor： Ki Jong KIM ,  Dae Youn Kim ,  Hyun Soo Jang

    IPC: C23C16/452

    CPC classification number: C23C16/452 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/32577

    Abstract: In a deposition apparatus, as a plurality of plasma connection terminals that transfer plasma power to a plasma electrode are coupled in parallel to the plasma electrode, resistance caused by the plurality of plasma connection terminals is reduced and a current is distributed such that heat generated in the plurality of plasma connection terminals can be distributed. Therefore, even if high RF power is used, by preventing the plurality of plasma connection terminals from being oxidized, plasma is stably supplied and thus, stability of a deposition apparatus and the accuracy of a process can be enhanced.

    Abstract translation: 在沉积装置中，作为将等离子体电力传递到等离子体电极的多个等离子体连接端子与等离子体电极并联耦合，减少了由多个等离子体连接端子引起的电阻，并且分配电流，使得在 可以分配多个等离子体连接端子。 因此，即使使用高的RF功率，通过防止多个等离子体连接端子被氧化，也能稳定地供给等离子体，能够提高蒸镀装置的稳定性和处理精度。

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