公开(公告)号：US10002936B2

公开(公告)日：2018-06-19

申请号：US14919180

申请日：2015-10-21

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/44 ,  H01L29/49 ,  C23C16/455 ,  H01L21/285 ,  C23C16/06 ,  C23C16/34 ,  H01L29/51

CPC classification number: H01L29/4966 ,  C23C16/06 ,  C23C16/34 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45531 ,  H01L21/28562 ,  H01L21/32051 ,  H01L29/517

Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

公开(公告)号：US20140273527A1

公开(公告)日：2014-09-18

申请号：US13798285

申请日：2013-03-13

Applicant: ASM IP HOLDING B.V.

Inventor： Antti Niskanen ,  Suvi Haukka ,  Jaakko Anttila

IPC: H01L21/02

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/4554 ,  C23C16/45553 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228

Abstract: The present invention relates to methods of forming silicon nitride thin films on a substrate in a reaction chamber by plasma enhanced atomic layer deposition (PEALD). Exemplary methods include the steps of (i) introducing an octahalotrisilane Si3X8 silicon precursor, such as octachlorotrisilane (OCTS) Si3Cl8, into a reaction space containing a substrate, (ii) introducing a nitrogen containing plasma into the reaction space, and wherein steps (i), (ii) and any steps in between constitute one cycle, and repeating said cycles a plurality of times until an atomic layer nitride film having a desired thickness is obtained.

Abstract translation: 本发明涉及通过等离子体增强原子层沉积（PEALD）在反应室中的衬底上形成氮化硅薄膜的方法。 示例性方法包括以下步骤：（i）将八卤代三硅烷Si 3 X 8硅前体如八氯三硅烷（OCTS）Si 3 Cl 8引入到含有底物的反应空间中，（ii）将含氮等离子体引入反应空间，并且其中步骤 ），（ii）和其间的任何步骤构成一个循环，并重复所述循环多次，直到获得具有所需厚度的原子层氮化物膜。

公开(公告)号：US12237392B2

公开(公告)日：2025-02-25

申请号：US17465127

申请日：2021-09-02

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC: H01L29/49 ,  C23C16/06 ,  C23C16/34 ,  C23C16/455 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L29/51

Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

公开(公告)号：US10741411B2

公开(公告)日：2020-08-11

申请号：US16143888

申请日：2018-09-27

Applicant: ASM IP HOLDING B.V.

Inventor： Antti Juhani Niskanen ,  Jaakko Anttila

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/311 ,  H01L21/768 ,  H01L21/306

Abstract: Methods for removing a passivation film from a copper surface can include exposing the passivation film to a vapor phase organic reactant, for example at a temperature of 100° C. to 400° C. In some embodiments, the passivation film may have been formed by exposure of the copper surface to benzotriazole, such as can occur during a chemical mechanical planarization process. The methods can be performed as part of a process for integrated circuit fabrication. A second material can be selectively deposited on the cleaned copper surface relative to another surface of the substrate.

公开(公告)号：US20170098546A1

公开(公告)日：2017-04-06

申请号：US15231611

申请日：2016-08-08

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Jaakko Anttila

IPC: H01L21/285 ,  C23C16/34 ,  C23C16/455

CPC classification number: H01L21/28556 ,  C23C16/34 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/28088 ,  H01L21/28562 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53238

Abstract: In one aspect, methods of forming smooth ternary metal nitride films, such as TixWyNz films, are provided. In some embodiments, the films are formed by an ALD process comprising multiple super-cycles, each super-cycle comprising two deposition sub-cycles. In one sub-cycle a metal nitride, such as TiN is deposited, for example from TiCl4 and NH3, and in the other sub-cycle an elemental metal, such as W, is deposited, for example from WF6 and Si2H6. The ratio of the numbers of each sub-cycle carried out within each super-cycle can be selected to achieve a film of the desired composition and having desired properties.

公开(公告)号：US20170029947A1

公开(公告)日：2017-02-02

申请号：US14811528

申请日：2015-07-28

Applicant: ASM IP Holding B.V.

Inventor： Jun Kawahara ,  Suvi Haukka ,  Antti Niskanen ,  Eva Tois ,  Raija Matero ,  Hidemi Suemori ,  Jaakko Anttila ,  Yukihiro Mori

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52

CPC classification number: C23C16/45527 ,  C23C16/45544 ,  C23C16/4583 ,  C23C16/52 ,  C23C16/54 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67745

Abstract: In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

Abstract translation: 根据本文的一些实施例，提供用于沉积薄膜的装置。 在一些实施例中，提供多个站，其中每个站提供不同的反应物或反应物的组合。 这些站可以彼此气体隔离，以便最小化或防止不同反应物或反应物组合之间的不希望的化学气相沉积（CVD）和/或原子层沉积（ALD）反应。

公开(公告)号：US09490145B2

公开(公告)日：2016-11-08

申请号：US14628799

申请日：2015-02-23

Applicant: ASM IP HOLDING B.V.

Inventor： Antti Juhani Niskanen ,  Jaakko Anttila

IPC: H01L21/02 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/311

CPC classification number: H01L21/32135 ,  H01L21/02074 ,  H01L21/02225 ,  H01L21/02334 ,  H01L21/02337 ,  H01L21/30621 ,  H01L21/31111 ,  H01L21/32136 ,  H01L21/76849 ,  H01L21/76883

Abstract: Methods for removing a passivation film from a copper surface can include exposing the passivation film to a vapor phase organic reactant, for example at a temperature of 100° C. to 400° C. In some embodiments, the passivation film may have been formed by exposure of the copper surface to benzotriazole, such as can occur during a chemical mechanical planarization process. The methods can be performed as part of a process for integrated circuit fabrication. A second material can be selectively deposited on the cleaned copper surface relative to another surface of the substrate.

Abstract translation: 从铜表面去除钝化膜的方法可以包括将钝化膜暴露于气相有机反应物，例如在100℃至400℃的温度下。在一些实施例中，钝化膜可以由 铜表面暴露于苯并三唑，例如可能在化学机械平面化过程中发生。 该方法可以作为用于集成电路制造的过程的一部分来执行。 第二材料可以相对于衬底的另一表面选择性地沉积在清洁的铜表面上。

公开(公告)号：US20160247695A1

公开(公告)日：2016-08-25

申请号：US14628799

申请日：2015-02-23

Applicant: ASM IP HOLDING B.V.

Inventor： ANTTI JUHANI NISKANEN ,  Jaakko Anttila

IPC: H01L21/3213 ,  H01L21/768

CPC classification number: H01L21/32135 ,  H01L21/02074 ,  H01L21/02225 ,  H01L21/02334 ,  H01L21/02337 ,  H01L21/30621 ,  H01L21/31111 ,  H01L21/32136 ,  H01L21/76849 ,  H01L21/76883

Abstract: Methods for removing a passivation film from a copper surface can include exposing the passivation film to a vapor phase organic reactant, for example at a temperature of 100° C. to 400° C. In some embodiments, the passivation film may have been formed by exposure of the copper surface to benzotriazole, such as can occur during a chemical mechanical planarization process. The methods can be performed as part of a process for integrated circuit fabrication. A second material can be selectively deposited on the cleaned copper surface relative to another surface of the substrate.

Abstract translation: 从铜表面去除钝化膜的方法可以包括将钝化膜暴露于气相有机反应物，例如在100℃至400℃的温度下。在一些实施方案中，钝化膜可以由 铜表面暴露于苯并三唑，例如可能在化学机械平面化过程中发生。 该方法可以作为用于集成电路制造的过程的一部分来执行。 第二材料可以相对于衬底的另一表面选择性地沉积在清洁的铜表面上。

公开(公告)号：US20160118261A1

公开(公告)日：2016-04-28

申请号：US14919180

申请日：2015-10-21

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC: H01L21/285 ,  H01L29/49

CPC classification number: H01L29/4966 ,  C23C16/06 ,  C23C16/34 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45531 ,  H01L21/28562 ,  H01L21/32051 ,  H01L29/517

Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

Abstract translation: 在反应空间中在基板上沉积包含氮的钛铝或钽铝薄膜的方法可以包括至少一个沉积循环。 沉积循环可以包括交替地和顺序地接触基底与气相Ti或Ta前体和气相Al前体。 气相Ti或Ta前体和气相Al前体中的至少一种可以在气相氮前体存在下与基底接触。

公开(公告)号：US20220195595A1

公开(公告)日：2022-06-23

申请号：US17554253

申请日：2021-12-17

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Jaakko Anttila

IPC: C23C16/448

Abstract: The current disclosure relates to a precursor capsule for holding a precursor for a vapor deposition process. The precursor capsule comprises a vapor-permeable shell configured to define a precursor space, and to allow precursor in vapor form to leave the precursor capsule under vaporization conditions. The disclosure further relates to a precursor vessel comprising capsules according to the current disclosure, to a vapor deposition apparatus and a method.