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公开(公告)号：US07557363B2
公开(公告)日：2009-07-07
申请号：US11543346
申请日：2006-10-04
申请人： Yongzhang Huang , Brian S. Freer , John Ye , Christopher Godfrey , Michael A. Graf , Patrick Splinter
发明人： Yongzhang Huang , Brian S. Freer , John Ye , Christopher Godfrey , Michael A. Graf , Patrick Splinter
IPC分类号： H01J37/317
CPC分类号： H01J37/304 , H01J37/3171 , H01J2237/24507 , H01J2237/24535 , H01J2237/31703
摘要： A method derives a terminal return current or upstream current to adjust and/or compensate for variations in beam current during ion implantation. One or more individual upstream current measurements are obtained from a region of an ion implantation system. A terminal return current, or composite upstream current, is derived from the one or more current measurements. The terminal return current is then employed to adjust scanning or dose of an ion beam in order to facilitate beam current uniformity at a target wafer.
摘要翻译： 一种方法导出终端返回电流或上游电流，以调整和/或补偿离子注入期间束电流的变化。 从离子注入系统的区域获得一个或多个单独的上游电流测量。 从一个或多个电流测量导出终端返回电流或复合上游电流。 然后使用端子返回电流来调整离子束的扫描或剂量，以便于目标晶片处的束电流均匀性。
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公开(公告)号：US20090032728A1
公开(公告)日：2009-02-05
申请号：US12184082
申请日：2008-07-31
IPC分类号： H01J27/02
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/0827 , H01J2237/30472
摘要： A hybrid ion source, comprising a source body configured to create plasma therein, from a first material, wherein the first material comprises one of monatomic gases, small molecule gases, large molecule gases, reactive gases, and solids, a low power plasma generation component operably associated with the source body, a high power plasma generation component operably associated with the source body and an extraction aperture configured to extract ions of the ion plasma from the source body.
摘要翻译： 一种混合离子源，包括被配置为在其中从第一材料产生等离子体的源体，其中第一材料包括单原子气体，小分子气体，大分子气体，反应性气体和固体中的一种，低功率等离子体产生部件 可操作地与源体相关联，与源体可操作地相关联的高功率等离子体产生部件和被配置为从源体提取离子等离子体的离子的提取孔。
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13.发明授权公开(公告)号：US06608315B1
公开(公告)日：2003-08-19
申请号：US09703769
申请日：2000-11-01
IPC分类号： H01J37317
CPC分类号： H01J37/3171 , H01J2237/028 , H05H7/00
摘要： A mass analysis magnet assembly (16) is provided for use in an ion implanter (10), comprising: (i) a magnet (44) for mass analyzing an ion beam (15) output by an ion source (14), the magnet providing an interior region (49) through which the ion beam passes; and (ii) at least one strike plate (48) in part forming an outer boundary of the interior region (49). The at least one strike plate is comprised of an isotopically pure carbon-based material. The isotopically pure carbon-based material, preferably by mass greater than 99% carbon C-12, prevents neutron radiation when impacted by deuterons extracted from the ion source (14). The strike plate (48) may comprise an upper layer (56) of isotopically pure carbon C-12 isotope positioned atop a lower substrate (54).
摘要翻译： 提供用于离子注入机（10）的质量分析磁体组件（16），其包括：（i）用于质量分析由离子源（14）输出的离子束（15）的磁体（44），所述磁体 提供离子束通过的内部区域（49）; 和（ii）部分地形成内部区域（49）的外边界的至少一个冲击板（48）。 至少一个冲击板由同位素纯的碳基材料组成。 同位素纯碳基材料，优选质量大于99％的碳C-12，当从离子源（14）提取的氘核撞击时，可防止中子辐射。 冲击板（48）可以包括位于下基板（54）顶部的同位素纯碳C-12同位素的上层（56）。
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14.发明授权公开(公告)号：US06476399B1
公开(公告)日：2002-11-05
申请号：US09654379
申请日：2000-09-01
IPC分类号： H01J3730
CPC分类号： H01J37/026 , H01J37/3002 , H01J37/3171 , H01J2237/004 , H01J2237/022 , H01J2237/31705
摘要： A system for inhibiting the transport of contaminant particles with an ion beam includes a particle charging system for charging particles within a region through which the ion beam travels. An electric field is generated downstream relative to the charged region so as to urge charged particles away from a direction of travel for the ion beam.
摘要翻译： 用于抑制用离子束输送污染物颗粒的系统包括用于在离子束行进的区域内填充颗粒的颗粒装料系统。 在相对于带电区域的下游产生电场，以便使带电粒子远离离子束的行进方向。
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15.发明申请System and method for two-dimensional beam scan across a workpiece of an ion implanter 有权用于离子注入机工件二维束扫描的系统和方法公开(公告)号：US20080149857A1
公开(公告)日：2008-06-26
申请号：US11644623
申请日：2006-12-22
IPC分类号： G21K5/10
CPC分类号： H01J37/3171 , H01J37/09 , H01J2237/022 , H01J2237/024 , H01J2237/0458 , H01J2237/057 , H01J2237/24528 , H01J2237/30455 , H01J2237/30483 , H01J2237/31705
摘要： A workpiece or semiconductor wafer is tilted as a ribbon beam is swept up and/or down the workpiece. In so doing, the implant angle or the angle of the ion beam relative to the workpiece remains substantially constant across the wafer. This allows devices to be formed substantially consistently on the wafer. Resolving plates move with the beam as the beam is scanned up and/or down. This allows desired ions to impinge on the wafer, but blocks undesirable contaminants.
摘要翻译： 当工件或半导体晶片沿着工件扫过和/或向下时，工件或半导体晶片被倾斜。 在这样做时，植入角度或离子束相对于工件的角度在晶片上保持基本恒定。 这允许在晶片上基本上一致地形成器件。 当光束向上扫描和/或向下扫描时，解析板随着光束移动。 这允许所需的离子撞击在晶片上，但阻止不期望的污染物。
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公开(公告)号：US20080078957A1
公开(公告)日：2008-04-03
申请号：US11541087
申请日：2006-09-29
IPC分类号： H01J37/08
CPC分类号： H01J37/3233 , H01J37/08 , H01J37/304 , H01J37/3171 , H01J37/32357 , H01J37/32935 , H01J2237/0817 , H01J2237/082 , H01J2237/24535 , H01J2237/30472 , H01J2237/31701 , H01L21/265
摘要： Beam current is adjusted during ion implantation by adjusting one or more parameters of an ion source. The ion beam is generated or provided by a non-arc discharge based ion source, such as an electron gun driven ion source or an RF driven ion source. A beam current adjustment amount is determined. Then, one or more parameters of the ion source are adjusted according to the determined beam current adjustment amount. The beam current is provided having a modulated beam current.
摘要翻译： 通过调整离子源的一个或多个参数，在离子注入期间调整光束电流。 离子束由非电弧放电型离子源（例如电子枪驱动离子源或RF驱动离子源）产生或提供。 确定射束电流调节量。 然后，根据确定的光束电流调节量来调整离子源的一个或多个参数。 提供具有调制束电流的束电流。
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公开(公告)号：US20080078955A1
公开(公告)日：2008-04-03
申请号：US11540449
申请日：2006-09-29
IPC分类号： H01J37/317 , H01J37/302
CPC分类号： H01J37/3171 , H01J37/08 , H01J37/3045 , H01J2237/043 , H01J2237/082 , H01J2237/24535 , H01J2237/24564 , H01J2237/24578 , H01J2237/30455 , H01J2237/30472
摘要： An ion beam is rapidly switched off during ion implantation on detecting a beam instability. The ion beam is generated or provided by a non-arc discharge based ion source, such as an electron gun ion source or an RF ion source. The ion beam is scanned across a workpiece from a starting location toward an ending location. During the scanning, one or more beam characteristics are monitored, such as beam current, beam flux, shape, and the like. An instability is detected when one or more of the beam characteristics deviate from acceptable values or levels. The ion beam is rapidly turned off on the detected instability.
摘要翻译： 在离子注入期间，在检测到光束不稳定性时，离子束被快速关闭。 离子束由非电弧放电型离子源（例如电子枪离子源或RF离子源）产生或提供。 离子束从起始位置朝向终止位置跨工件扫描。 在扫描期间，监视一个或多个光束特性，例如光束电流，光束通量，形状等。 当一个或多个光束特性偏离可接受的值或水平时，检测到不稳定性。 在检测到的不稳定性下，离子束快速关闭。
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公开(公告)号：US06534775B1
公开(公告)日：2003-03-18
申请号：US09654380
申请日：2000-09-01
IPC分类号： H01J3730
CPC分类号： H01J37/3171 , H01J3/40 , H01J37/026 , H01J37/3002 , H01J2237/004 , H01J2237/022 , H01J2237/31705
摘要： A system for inhibiting the transport of contaminant particles with an ion beam includes a pair of electrodes that provide opposite electric fields through which the ion beam travels. A particle entrained in the ion beam is charged to a polarity matching the polarity of ion beam when traveling through a first of the electric fields. The downstream electrode provides another electric field for repelling the positively charged particle away from the direction of beam travel.
摘要翻译： 用于抑制用离子束输送污染物颗粒的系统包括一对电极，其提供相反的电场，离子束通过该电场传播。 夹带在离子束中的颗粒在穿过第一电场时被充电到与离子束的极性相匹配的极性。 下游电极提供另一个电场，用于驱除带正电的粒子远离光束移动的方向。
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公开(公告)号：US6135128A
公开(公告)日：2000-10-24
申请号：US49642
申请日：1998-03-27
IPC分类号： H01J27/02 , C23C14/48 , H01J27/04 , H01J37/08 , H01J37/317 , H01L21/265 , B08B3/12 , C23F1/02 , G01N21/01 , H01J27/00
CPC分类号： H01J37/3171 , H01J27/04 , H01J37/08 , H01J2237/022 , H01J2237/061
摘要： A method and system for in-process cleaning of an ion source (12) is provided. The ion source (12) comprises (i) a plasma chamber (22) formed by chamber walls (112, 114, 116) that bound an ionization zone (120); (ii) a source of ionizable dopant gas (66) and a first mechanism (68) for introducing said ionizable dopant gas into said plasma chamber; (iii) a source of cleaning gas (182) and a second mechanism (184) for introducing said cleaning gas into said plasma chamber; and (iv) an exciter (130) at least partially disposed within said chamber for imparting energy to said ionizable dopant gas and said cleaning gas to create a plasma within said plasma chamber. The plasma comprises disassociated and ionized constituents of said dopant gas and disassociated and ionized constituents of said cleaning gas. The disassociated and ionized constituents of said cleaning gas react with said disassociated and ionized constituents of said dopant gas to prevent formation of deposits of elements contained within said ionizable dopant gas on surfaces of said chamber walls. The cleaning gas may be, for example, nitrogen trifluoride (NF.sub.3), and the ionizable dopant gas may be, for example, either phosphine (PH.sub.3) or arsine (AsH.sub.3). Mass flow controllers control the ratio of cleaning gas to ionizable dopant gas introduced into said plasma chamber, which is greater than 0:1 and preferably at least 3:1.
摘要翻译： 提供了一种用于在过程中清洁离子源（12）的方法和系统。 离子源（12）包括（i）由结合电离区（120）的室壁（112,114,116）形成的等离子体室（22）; （ii）可电离掺杂剂气体源（66）和用于将所述可电离掺杂剂气体引入所述等离子体室的第一机构（68） （iii）用于将所述清洁气体引入所述等离子体室的清洁气体源（182）和第二机构（184）; 和（iv）至少部分地设置在所述腔室内的激励器（130），用于向所述可电离掺杂剂气体和所述清洁气体赋予能量以在所述等离子体腔室内产生等离子体。 所述等离子体包括所述掺杂气体的分离和离子化成分以及所述清洁气体的解离和离子化成分。 所述清洁气体的分离和离子化的组分与所述掺杂剂气体的所述分离和离子化的组分反应，以防止在所述室壁的表面上形成包含在所述可电离掺杂剂气体内的元素沉积物。 清洁气体可以是例如三氟化氮（NF 3），并且可电离掺杂剂气体可以是例如磷化氢（PH 3）或胂（AsH 3）。 质量流量控制器控制导入所述等离子体室的清洁气体与可离子化掺杂剂气体的比例大于0:1，优选至少3:1。
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公开(公告)号：US08193513B2
公开(公告)日：2012-06-05
申请号：US12184082
申请日：2008-07-31
IPC分类号： H01J27/00
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/0827 , H01J2237/30472
摘要： A hybrid ion source, comprising a source body configured to create plasma therein, from a first material, wherein the first material comprises one of monatomic gases, small molecule gases, large molecule gases, reactive gases, and solids, a low power plasma generation component operably associated with the source body, a high power plasma generation component operably associated with the source body and an extraction aperture configured to extract ions of the ion plasma from the source body.
摘要翻译： 一种混合离子源，包括被配置为在其中从第一材料产生等离子体的源体，其中第一材料包括单原子气体，小分子气体，大分子气体，反应性气体和固体中的一种，低功率等离子体产生部件 可操作地与源体相关联，与源体可操作地相关联的高功率等离子体产生部件和被配置为从源体提取离子等离子体的离子的提取孔。
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