公开(公告)号：US20210233790A1

公开(公告)日：2021-07-29

申请号：US17227442

申请日：2021-04-12

申请人： APPLIED MATERIALS, INC.

发明人： Shashidhara Patel ,  Ananthkrishna Jupudi ,  Ribhu Gautam

IPC分类号： H01L21/677 ,  C23C16/458 ,  H01L21/68 ,  H01L21/673

摘要： Methods and apparatus for supporting substrates are provided herein. In some embodiments, a substrate support for supporting a plurality of substrates includes: a plurality of substrate support elements having a ring shape configured to support a plurality of substrates in a vertically spaced apart relation; and a plurality of substrate lift elements interfacing with the plurality of substrate support elements and configured to simultaneously selectively raise or lower substrates off of or onto respective substrate support elements.

公开(公告)号：US20190341286A1

公开(公告)日：2019-11-07

申请号：US16198417

申请日：2018-11-21

申请人： APPLIED MATERIALS, INC.

发明人： Shashidhara Patel ,  Ananthkrishna Jupudi ,  Ribhu Gautam

IPC分类号： H01L21/677 ,  H01L21/673 ,  H01L21/68 ,  C23C16/458

摘要： Methods and apparatus for supporting substrates are provided herein. In some embodiments, a substrate support for supporting a plurality of substrates includes: a plurality of substrate support elements having a ring shape configured to support a plurality of substrates in a vertically spaced apart relation; and a plurality of substrate lift elements interfacing with the plurality of substrate support elements and configured to simultaneously selectively raise or lower substrates off of or onto respective substrate support elements.

公开(公告)号：US12100577B2

公开(公告)日：2024-09-24

申请号：US16664117

申请日：2019-10-25

申请人： APPLIED MATERIALS, INC.

发明人： Sarath Babu ,  Ananthkrishna Jupudi ,  Yueh Sheng Ow ,  Junqi Wei ,  Kelvin Boh ,  Yuichi Wada ,  Kang Zhang

IPC分类号： H01J37/32

CPC分类号： H01J37/32495 ,  H01J37/32477 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/32834 ,  H01J2237/2007 ,  H01J2237/335

摘要： Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes a tubular body having a central opening configured to surround a substrate support, wherein sidewalls of the tubular body do not include any through holes; and a top plate coupled to an upper end of the tubular body and substantially covering the central opening, wherein the top plate has a gas inlet and has a diameter that is greater than an outer diameter of the tubular body, and wherein the tubular body extends straight down from the top plate.

公开(公告)号：US20240087913A1

公开(公告)日：2024-03-14

申请号：US18516238

申请日：2023-11-21

申请人： Applied Materials, Inc.

发明人： Kang Zhang ,  Junqi Wei ,  Yueh Sheng Ow ,  Kelvin Boh ,  Yuichi Wada ,  Ananthkrishna Jupudi ,  Sarath Babu

IPC分类号： H01L21/48 ,  H01L21/02 ,  H01L21/322 ,  H01L21/50 ,  H01L21/67 ,  H01L21/768 ,  H01L23/00

CPC分类号： H01L21/4853 ,  H01L21/02043 ,  H01L21/322 ,  H01L21/50 ,  H01L21/67011 ,  H01L21/76841 ,  H01L24/11 ,  H01L24/94 ,  H01L2021/60052

摘要： Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.

公开(公告)号：US11862480B2

公开(公告)日：2024-01-02

申请号：US17498129

申请日：2021-10-11

申请人： Applied Materials, Inc.

发明人： Kang Zhang ,  Junqi Wei ,  Yueh Sheng Ow ,  Kelvin Boh ,  Yuichi Wada ,  Ananthkrishna Jupudi ,  Sarath Babu

IPC分类号： H01L21/48 ,  H01L21/322 ,  H01L21/02 ,  H01L23/00 ,  H01L21/768 ,  H01L21/67 ,  H01L21/50 ,  H01L21/60

CPC分类号： H01L21/4853 ,  H01L21/02043 ,  H01L21/322 ,  H01L21/50 ,  H01L21/67011 ,  H01L21/76841 ,  H01L24/11 ,  H01L24/94 ,  H01L2021/60052

摘要： Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.

公开(公告)号：US11784075B2

公开(公告)日：2023-10-10

申请号：US17227442

申请日：2021-04-12

申请人： APPLIED MATERIALS, INC.

发明人： Shashidhara Patel ,  Ananthkrishna Jupudi ,  Ribhu Gautam

IPC分类号： H01L21/67 ,  H01L21/677 ,  C23C16/458 ,  H01L21/68 ,  H01L21/673

CPC分类号： H01L21/67757 ,  C23C16/4583 ,  H01L21/67346 ,  H01L21/68

摘要： Methods and apparatus for supporting substrates are provided herein. In some embodiments, a substrate support for supporting a plurality of substrates includes: a plurality of substrate support elements having a ring shape configured to support a plurality of substrates in a vertically spaced apart relation; and a plurality of substrate lift elements interfacing with the plurality of substrate support elements and configured to simultaneously selectively raise or lower substrates off of or onto respective substrate support elements.

公开(公告)号：US11629409B2

公开(公告)日：2023-04-18

申请号：US16424302

申请日：2019-05-28

申请人： APPLIED MATERIALS, INC.

发明人： Ribhu Gautam ,  Ananthkrishna Jupudi ,  Tuck Foong Koh ,  Preetham P. Rao ,  Vinodh Ramachandran ,  Yueh Sheng Ow ,  Yuichi Wada ,  Cheng-Hsiung Tsai ,  Kai Liang Liew

IPC分类号： C23C16/511 ,  B01J19/12 ,  C23C16/54 ,  H05B6/64 ,  H01J37/32

摘要： Methods and apparatus for a substrate processing chamber are provided herein. In some embodiments, a substrate processing chamber includes a chamber body having sidewalls defining an interior volume having a polygon shape; a selectively sealable elongated opening disposed in an upper portion of the chamber body for transferring one or more substrates into or out of the chamber body; a funnel disposed at a first end of the chamber body, wherein the funnel increases in size along a direction from an outer surface of the chamber body to the interior volume; and a pump port disposed at a second end of the chamber body opposite the funnel.

公开(公告)号：USD967081S1

公开(公告)日：2022-10-18

申请号：US29756723

申请日：2020-10-30

申请人： Applied Materials, Inc.

设计人： Rajesh Kumar Putti ,  Prashant Agarwal ,  Ananthkrishna Jupudi

公开(公告)号：US11328929B2

公开(公告)日：2022-05-10

申请号：US16399478

申请日：2019-04-30

申请人： APPLIED MATERIALS, INC.

发明人： Yueh Sheng Ow ,  Junqi Wei ,  Wen Long Favier Shoo ,  Ananthkrishna Jupudi ,  Takashi Shimizu ,  Kelvin Boh ,  Tuck Foong Koh

IPC分类号： H01L21/311 ,  H01L21/30 ,  H01L21/683 ,  H01L21/67

摘要： Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.

公开(公告)号：US20220028702A1

公开(公告)日：2022-01-27

申请号：US17498129

申请日：2021-10-11

申请人： Applied Materials, Inc.

发明人： Zhang Kang ,  Junqi Wei ,  Yueh Sheng Ow ,  Kelvin Boh ,  Yuichi Wada ,  Ananthkrishna Jupudi ,  Sarath Babu

IPC分类号： H01L21/48 ,  H01L21/67 ,  H01L23/00 ,  H01L21/768 ,  H01L21/322 ,  H01L21/50 ,  H01L21/02 ,  H01L21/60

摘要： Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.