公开(公告)号：US10930543B2

公开(公告)日：2021-02-23

申请号：US16109945

申请日：2018-08-23

Applicant: Applied Materials, Inc.

Inventor： Anhthu Ngo ,  Zuoming Zhu ,  Balasubramanian Ramachandran ,  Paul Brillhart ,  Edric Tong ,  Anzhong Chang ,  Kin Pong Lo ,  Kartik Shah ,  Schubert S. Chu ,  Zhepeng Cong ,  James Francis Mack ,  Nyi O. Myo ,  Kevin Joseph Bautista ,  Xuebin Li ,  Yi-Chiau Huang ,  Zhiyuan Ye

IPC: H01L21/687 ,  C30B25/12 ,  B05C13/02 ,  B05C13/00 ,  H01L21/673 ,  C23C16/458

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

公开(公告)号：US10306708B2

公开(公告)日：2019-05-28

申请号：US15824489

申请日：2017-11-28

Applicant: Applied Materials, Inc.

Inventor： Kin Pong Lo ,  Paul Brillhart ,  Balasubramanian Ramachandran ,  Satheesh Kuppurao ,  Daniel Redfield ,  Joseph M. Ranish ,  James Francis Mack ,  Kailash Kiran Patalay ,  Michael Olsen ,  Eddie Feigel ,  Richard Halpin ,  Brett Vetorino

IPC: G02B5/08 ,  H05B3/00 ,  H01L21/67

Abstract: Embodiments of the disclosure generally relate to a reflector for use in a thermal processing chamber. In one embodiment, the thermal processing chamber generally includes an upper dome, a lower dome opposing the upper dome, the upper dome and the lower dome defining an internal volume of the processing chamber, a substrate support disposed within the internal volume, and a reflector positioned above and proximate to the upper dome, wherein the reflector has a heat absorptive coating layer deposited on a side of the reflector facing the substrate support.

公开(公告)号：US10062598B2

公开(公告)日：2018-08-28

申请号：US14698793

申请日：2015-04-28

Applicant: Applied Materials, Inc.

Inventor： Anhthu Ngo ,  Zuoming Zhu ,  Balasubramanian Ramachandran ,  Paul Brillhart ,  Edric Tong ,  Anzhong Chang ,  Kin Pong Lo ,  Kartik Shah ,  Schubert S. Chu ,  Zhepeng Cong ,  James Francis Mack ,  Nyi O. Myo ,  Kevin Joseph Bautista ,  Xuebin Li ,  Yi-Chiau Huang ,  Zhiyuan Ye

IPC: H01L21/687 ,  H01L21/673 ,  C30B25/12 ,  B05C13/02 ,  B05C13/00 ,  C23C16/458

CPC classification number: H01L21/68735 ,  B05C13/00 ,  B05C13/02 ,  C23C16/4585 ,  C30B25/12 ,  H01L21/67326 ,  H01L21/6875 ,  H01L21/68785

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

公开(公告)号：US09580835B2

公开(公告)日：2017-02-28

申请号：US14987446

申请日：2016-01-04

Applicant: Applied Materials, Inc.

Inventor： Joseph M. Ranish ,  Paul Brillhart ,  Jose Antonio Marin ,  Satheesh Kuppurao ,  Balasubramanian Ramachandran ,  Swaminathan T. Srinivasan ,  Mehmet Tugrul Samir

IPC: C30B25/10 ,  H01L21/67 ,  H01L21/02 ,  C30B25/08 ,  C30B25/14 ,  C30B25/16 ,  G01J5/10 ,  H01L21/66

CPC classification number: C30B25/105 ,  C23C16/4583 ,  C23C16/481 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  C30B25/16 ,  G01J5/0007 ,  G01J5/10 ,  G01J2005/106 ,  H01L21/0262 ,  H01L21/67115 ,  H01L21/67248 ,  H01L22/10 ,  H01L22/20

Abstract: A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.

Abstract translation: 描述了一种用于处理半导体衬底的方法和设备。 该装置是具有光学透明的上部圆顶和下部圆顶的处理室。 在处理过程中真空保持在处理室中。 通过使热控制流体沿着加工区域外的上部圆顶流动来对上部圆顶进行热控制。 散热灯靠近下穹顶定位，热传感器设置在灯之间。 灯具已通电，并且控制器根据从热传感器接收的数据调节灯区的电源。

公开(公告)号：US09117661B2

公开(公告)日：2015-08-25

申请号：US14043505

申请日：2013-10-01

Applicant: Applied Materials, Inc.

Inventor： Yoshitaka Yokota ,  Norman L. Tam ,  Balasubramanian Ramachandran ,  Martin John Ripley

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/316 ,  H01L21/32

CPC classification number: H01L21/02238 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/28247 ,  H01L21/31662 ,  H01L21/32

Abstract: A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.

Abstract translation: 公开并要求保护半导体器件中含硅材料的选择性氧化的方法。 一方面，快速热处理装置用于通过在富氢气氛中高压下原位蒸汽产生来选择性氧化基板。 衬底中的其它材料，例如金属和阻挡层，不被氧化。