公开(公告)号：US20180281027A1

公开(公告)日：2018-10-04

申请号：US15473093

申请日：2017-03-29

Applicant: Applied Materials, Inc.

Inventor： Brian T. WEST

IPC: B08B3/10 ,  C23C16/44 ,  C23C14/22 ,  B08B1/00 ,  B08B3/08

CPC classification number: C23C14/22 ,  B08B1/005 ,  B08B3/12 ,  B24C1/06 ,  B24C1/08 ,  C23C14/564 ,  C23C16/4407

Abstract: A method for recycling a substrate process component of a processing chamber is provided. In one example, the recycling process includes retrieving a reference dimension for the substrate process component. The substrate process component includes a side wall having a bottom surface, an outer surface, a pre-defined wall thickness between the bottom surface and the outer surface, and a residue layer. The reference dimension corresponds to the pre-defined wall thickness. The recycling process includes machining the substrate process component with a mechanical cutting tool. The machining includes securing the substrate process component to a work piece holder and passing the mechanical cutting tool across the outer surface in a machining operation controlled by a controller to remove the residue layer. The controller uses the reference dimension to control the machining operation so that the substrate process component has the reference dimension after removal of the residue layer.

公开(公告)号：US20170316924A1

公开(公告)日：2017-11-02

申请号：US15432590

申请日：2017-02-14

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX ,  Lara HAWRYLCHAK ,  Brian T. WEST

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/34 ,  H01L21/02

CPC classification number: H01J37/3438 ,  C23C14/34 ,  C23C14/564 ,  H01J37/32541 ,  H01J37/32568 ,  H01L21/02164 ,  H01L21/02266

Abstract: Embodiments of the invention generally relate to an anode for a semiconductor processing chamber. More specifically, embodiments described herein relate to a process kit including a shield serving as an anode in a physical deposition chamber. The shield has a cylindrical band, the cylindrical band having a top and a bottom, the cylindrical band sized to encircle a sputtering surface of a sputtering target disposed adjacent the top and a substrate support disposed at the bottom, the cylindrical band having an interior surface. A texture is disposed on the interior surface. The texture has a plurality of features. A shaded area is disposed in the feature wherein the shaded area is not visible to the sputtering target. A small anode surface is disposed in the shaded area.

公开(公告)号：US20150048735A1

公开(公告)日：2015-02-19

申请号：US14338779

申请日：2014-07-23

Applicant: Applied Materials, Inc.

Inventor： Brian T. WEST ,  Roger M. JOHNSON ,  Michael S. COX

IPC: H01J37/34 ,  H01J25/50 ,  H01J23/12

CPC classification number: H01J37/3405 ,  H01J23/05 ,  H01J23/10 ,  H01J25/50 ,  H01J25/587 ,  H01J37/345 ,  H03B9/10 ,  H03C3/32 ,  H03C5/04

Abstract: Embodiments of the present invention generally provide a magnetron that is encapsulated by a material that is tolerant of heat and water. In one embodiment, the entire magnetron is encapsulated. In another embodiment, the magnetron includes magnetic pole pieces, and the magnetic pole pieces are not covered by the encapsulating material.

Abstract translation: 本发明的实施例通常提供由受热和水耐受的材料包封的磁控管。 在一个实施例中，整个磁控管被封装。 在另一个实施例中，磁控管包括磁极片，磁极片不被封装材料覆盖。

公开(公告)号：US20140374509A1

公开(公告)日：2014-12-25

申请号：US14480799

申请日：2014-09-09

Applicant: Applied Materials, Inc.

Inventor： Stanley DETMAR ,  Brian T. WEST ,  Ronald Vern SCHAUER

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/334

Abstract: Embodiments of the present invention generally provide plasma etch process chamber improvements. An improved gas injection nozzle is provided for use at a central location of the lid of the chamber. The gas injection nozzle may be used in an existing plasma etch chamber and is configured to provide a series of conic gas flows across the surface of a substrate positioned within the chamber. In one embodiment, an improved exhaust kit for use in the plasma etch chamber is provided. The exhaust kit includes apparatus that may be used in an existing plasma etch chamber and is configured to provide annular flow of exhaust gases from the processing region of the chamber.

Abstract translation: 本发明的实施例通常提供等离子体蚀刻处理室的改进。 提供改进的气体注入喷嘴，用于在室的盖的中心位置。 气体注入喷嘴可以用于现有的等离子体蚀刻室，并且被配置为提供跨过位于腔室内的衬底的表面的一系列圆锥气流。 在一个实施例中，提供了一种用于等离子体蚀刻室中的改进的排气套件。 排气套件包括可用于现有等离子体蚀刻室中并且被配置为提供来自腔室的处理区域的排气的环形流的装置。

公开(公告)号：US20190096643A1

公开(公告)日：2019-03-28

申请号：US16203353

申请日：2018-11-28

Applicant: Applied Materials, Inc.

Inventor： Simon Nicholas BINNS ,  Brian T. WEST ,  Ronald Vern SCHAUER ,  Roger M. JOHNSON ,  Michael S. COX

IPC: H01J37/34 ,  H01J37/32

Abstract: A process chamber includes a chamber body having a chamber lid assembly disposed thereon, one or more monitoring devices coupled to the chamber lid assembly, and one or more antennas disposed adjacent to the chamber lid assembly that are in communication with the one or more monitoring devices.

公开(公告)号：US20180019108A1

公开(公告)日：2018-01-18

申请号：US15715859

申请日：2017-09-26

Applicant: Applied Materials, Inc.

Inventor： Brian T. WEST ,  Michael S. COX ,  Jeonghoon OH

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/34

CPC classification number: H01J37/3405 ,  C23C14/3407 ,  C23C14/35 ,  H01J37/3423 ,  H01J37/3426 ,  H01J37/3429 ,  H01J37/3435 ,  H01J37/347 ,  H01J37/3491 ,  H01J37/3497

Abstract: Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.

公开(公告)号：US20170133208A1

公开(公告)日：2017-05-11

申请号：US15411711

申请日：2017-01-20

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX ,  Rongping WANG ,  Brian T. WEST ,  Roger M. JOHNSON ,  Colin John DICKINSON

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32844 ,  B01D53/323 ,  B01D2257/55 ,  B01D2257/553 ,  B01D2257/556 ,  B01D2258/0216 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32495 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596 ,  H01J37/32669 ,  H01J37/32825 ,  H01J2237/332 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/02123 ,  H01L21/02274 ,  Y02C20/30

Abstract: Embodiments disclosed herein include a method for abating compounds produced in semiconductor processes. The method includes energizing an abating agent, forming a composition by reacting the energized abating agent with gases exiting a vacuum processing chamber, and flowing the composition through a plurality of holes formed in a cooling plate. By cooling the composition with the cooling plate, damages on the downstream pump are avoided.

公开(公告)号：US20160172226A1

公开(公告)日：2016-06-16

申请号：US14567161

申请日：2014-12-11

Applicant: Applied Materials, Inc.

Inventor： Brian T. WEST ,  Manoj A. GAJENDRA ,  Soundarrajan JEMBULINGAM

IPC: H01L21/683 ,  C23C16/46 ,  C23C16/455 ,  H02N13/00 ,  C23C14/22

CPC classification number: C23C16/46 ,  C23C14/50 ,  C23C16/4586 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/67109 ,  H01L21/6831

Abstract: Embodiments of the disclosure include an electrostatic chuck assembly, a processing chamber and a method of maintaining a temperature of a substrate is provided. In one embodiment, an electrostatic chuck assembly is provided that includes an electrostatic chuck, a cooling plate and a gas box. The cooling plate includes a gas channel formed therein. The gas box is operable to control a flow of cooling gas through the gas channel.

Abstract translation: 本发明的实施例包括静电卡盘组件，处理室以及维持基板温度的方法。 在一个实施例中，提供了包括静电卡盘，冷却板和气体箱的静电卡盘组件。 冷却板包括形成在其中的气体通道。 气箱可操作以控制通过气体通道的冷却气体的流动。

公开(公告)号：US20160133442A1

公开(公告)日：2016-05-12

申请号：US14995187

申请日：2016-01-13

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX ,  Rongping WANG ,  Brian T. WEST ,  Roger M. JOHNSON ,  Colin John DICKINSON

IPC: H01J37/32

CPC classification number: H01J37/32844 ,  B01D53/323 ,  B01D2257/55 ,  B01D2257/553 ,  B01D2257/556 ,  B01D2258/0216 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32495 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596 ,  H01J37/32669 ,  H01J37/32825 ,  H01J2237/332 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/02123 ,  H01L21/02274 ,  Y02C20/30

Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

Abstract translation: 本文公开的实施方案包括减轻半导体工艺中产生的化合物的减排系统。 减排系统包括具有平行于第一板的第一板和第二板的等离子体源。 电极设置在第一和第二板之间，并且外壁设置在围绕电极的第一和第二板之间。 等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。 由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。 在该配置中，产生致密等离子体。

公开(公告)号：US20150262798A1

公开(公告)日：2015-09-17

申请号：US14623419

申请日：2015-02-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Simon Nicholas BINNS ,  Brian T. WEST ,  Ronald Vern SCHAUER ,  Roger M. JOHNSON ,  Michael S. COX

IPC: H01J37/34

CPC classification number: H01J37/3476 ,  H01J37/32935 ,  H01J37/3405 ,  H01J37/3414 ,  H01J37/3479

Abstract: A process chamber includes a chamber body having a chamber lid assembly disposed thereon, one or more monitoring devices coupled to the chamber lid assembly, and one or more antennas disposed adjacent to the chamber lid assembly that are in communication with the one or more monitoring devices.

Abstract translation: 处理室包括室主体，其具有设置在其上的室盖组件，耦合到室盖组件的一个或多个监控装置以及与室盖组件相邻设置的一个或多个与该一个或多个监控装置连通的天线 。