公开(公告)号：US10930475B2

公开(公告)日：2021-02-23

申请号：US16188722

申请日：2018-11-13

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar Kulshreshtha ,  Ziqing Duan ,  Abdul Aziz Khaja ,  Zheng John Ye ,  Amit Kumar Bansal

IPC: H01J37/32 ,  C23C16/458 ,  H01L21/683 ,  C23C16/02 ,  C23C16/34 ,  C23C16/36 ,  C23C16/44 ,  C23C16/509

Abstract: The present disclosure generally relates to processing chamber seasoning layers having a graded composition. In one example, the seasoning layer is a boron-carbon-nitride (BCN) film. The BCN film may have a greater composition of boron at the base of the film. As the BCN film is deposited, the boron concentration may approach zero, while the relative carbon and nitrogen concentration increases. The BCN film may be deposited by initially co-flowing a boron precursor, a carbon precursor, and a nitrogen precursor. After a first period of time, the flow rate of the boron precursor may be reduced. As the flow rate of boron precursor is reduced, RF power may be applied to generate a plasma during deposition of the seasoning layer.

公开(公告)号：US10784107B2

公开(公告)日：2020-09-22

申请号：US15969119

申请日：2018-05-02

Applicant: Applied Materials, Inc.

Inventor： Abhijit Basu Mallick ,  Pramit Manna ,  Yihong Chen ,  Ziqing Duan ,  Rui Cheng ,  Shishi Jiang

IPC: H01L21/3065 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/033 ,  H01L21/768 ,  H01L21/3215

Abstract: Methods of forming self-aligned patterns are described. A film material is deposited on a patterned film to fill and cover features formed by the patterned film. The film material is recessed to a level below the top of the patterned film. The recessed film is converted to a metal film by exposure to a metal precursor followed by volumetric expansion of the metal film.

公开(公告)号：US10770349B2

公开(公告)日：2020-09-08

申请号：US15902362

申请日：2018-02-22

Applicant: Applied Materials, Inc.

Inventor： Abhijit Basu Mallick ,  Ziqing Duan

IPC: H01L21/768 ,  H01L21/285 ,  H01L21/02 ,  H01L21/311

Abstract: Processing methods to create self-aligned contacts are described. A conformal liner can be deposited in a feature in a substrate surface leaving a gap between the walls of the liner. A tungsten film can be deposited in the gap of the liner and volumetrically expanded. The expanded film can be removed and replaced with a contact material to a make a contact. In some embodiments, a conformal tungsten film can be formed in the feature leaving a gap between the walls. A dielectric can be deposited in the gap and the conformal tungsten film can be volumetrically expanded to grow two pillars. The pillars can be removed and replaced with a contact material to make two contacts.

公开(公告)号：US10559497B2

公开(公告)日：2020-02-11

申请号：US16006402

申请日：2018-06-12

Applicant: Applied Materials, Inc.

Inventor： Yong Wu ,  Yihong Chen ,  Shishi Jiang ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/00 ,  H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  H01L21/02

Abstract: Methods for filling a substrate feature with a seamless tungsten fill are described. The methods include depositing a tungsten film, oxidizing the tungsten film to a tungsten oxide pillar, reducing the tungsten oxide film to a seamless tungsten gapfill and optionally depositing additional tungsten on the tungsten gapfill.

公开(公告)号：US10410872B2

公开(公告)日：2019-09-10

申请号：US15695269

申请日：2017-09-05

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Ziqing Duan ,  Milind Gadre ,  Praket P. Jha ,  Abhijit Basu Mallick ,  Deenesh Padhi

IPC: H01L21/285 ,  C23C16/30 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/3205 ,  C23C16/04 ,  C23C16/24 ,  H01L21/033

Abstract: Implementations described herein generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron-doped amorphous silicon layers on a semiconductor substrate. In one implementation, a method of forming a boron-doped amorphous silicon layer on a substrate is provided. The method comprises depositing a predetermined thickness of a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, depositing conformally a predetermined thickness of a boron-doped amorphous silicon layer on the patterned features and the exposed upper surface of the substrate and selectively removing the boron-doped amorphous silicon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers formed from the boron-doped amorphous silicon layer.

公开(公告)号：US10403542B2

公开(公告)日：2019-09-03

申请号：US16003827

申请日：2018-06-08

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Praburam Gopalraja

IPC: H01L21/768 ,  H01L21/311 ,  H01J37/32 ,  H01L23/532

Abstract: A first metallization layer comprises a set of first conductive lines that extend along a first direction on a first dielectric layer on a substrate. Pillars are formed on recessed first dielectric layers and a second dielectric layer covers the pillars. A dual damascene etch provides a contact hole through the second dielectric layer and an etch removes the pillars to form air gaps.

公开(公告)号：US10319636B2

公开(公告)日：2019-06-11

申请号：US15801949

申请日：2017-11-02

Applicant: Applied Materials, Inc.

Inventor： Atashi Basu ,  Abhijit Basu Mallick ,  Ziqing Duan ,  Srinivas Gandikota

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/266 ,  H01L21/762 ,  H01L21/768 ,  H01L21/3213

Abstract: Methods comprising depositing a film material to form an initial film in a trench in a substrate surface are described. The film is treated to expand the film to grow beyond the substrate surface.

公开(公告)号：US20180323068A1

公开(公告)日：2018-11-08

申请号：US15969119

申请日：2018-05-02

Applicant: Applied Materials, Inc.

Inventor： Abhijit Basu Mallick ,  Pramit Manna ,  Yihong Chen ,  Ziqing Duan ,  Rui Cheng ,  Shishi Jiang

IPC: H01L21/033

Abstract: Methods of forming self-aligned patterns are described. A film material is deposited on a patterned film to fill and cover features formed by the patterned film. The film material is recessed to a level below the top of the patterned film. The recessed film is converted to a metal film by exposure to a metal precursor followed by volumetric expansion of the metal film.

公开(公告)号：US10100408B2

公开(公告)日：2018-10-16

申请号：US14594296

申请日：2015-01-12

Applicant: Applied Materials, Inc.

Inventor： Sungwon Ha ,  Kwangduk Douglas Lee ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Martin Jay Seamons ,  Ziqing Duan ,  Zheng John Ye ,  Bok Hoen Kim ,  Lei Jing ,  Ngoc Le ,  Ndanka Mukuti

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/458 ,  C23C16/509 ,  H01J37/32

Abstract: Embodiments described herein relate to a faceplate for improving film uniformity. A semiconductor processing apparatus includes a pedestal, an edge ring and a faceplate having distinct regions with differing hole densities. The faceplate has an inner region and an outer region which surrounds the inner region. The inner region has a greater density of holes formed therethrough when compared to the outer region. The inner region is sized to correspond with a substrate being processed while the outer region is sized to correspond with the edge ring.

公开(公告)号：US09837265B2

公开(公告)日：2017-12-05

申请号：US15192732

申请日：2016-06-24

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar Kulshreshtha ,  Sudha Rathi ,  Praket P. Jha ,  Saptarshi Basu ,  Kwangduk Douglas Lee ,  Martin J. Seamons ,  Bok Hoen Kim ,  Ganesh Balasubramanian ,  Ziqing Duan ,  Lei Jing ,  Mandar B. Pandit

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/033 ,  H01L21/66 ,  C23C16/26 ,  C23C16/04 ,  H01L21/311

CPC classification number: H01L21/02274 ,  C23C16/04 ,  C23C16/26 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/45508 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/02115 ,  H01L21/0337 ,  H01L21/31144 ,  H01L22/12

Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.