公开(公告)号：US11049731B2

公开(公告)日：2021-06-29

申请号：US16586806

申请日：2019-09-27

Applicant: Applied Materials, Inc.

Inventor： Erica Chen ,  Chentsau Chris Ying ,  Bhargav S. Citla ,  Jethro Tannos ,  Matthew August Mattson

IPC: H01L21/322 ,  H01L21/425 ,  H01L21/02

Abstract: A method of converting films is disclosed. A method of modifying films is also disclosed. Some methods advantageously convert films from a first elemental composition to a second elemental composition. Some methods advantageously modify film properties without modifying film composition.

公开(公告)号：US20190157134A1

公开(公告)日：2019-05-23

申请号：US16259175

申请日：2019-01-28

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Ludovic Godet ,  Rui Cheng ,  Erica Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/762 ,  H01L21/02 ,  H01L23/31 ,  H01L21/768 ,  H01L29/06

CPC classification number: H01L21/76224 ,  H01L21/02123 ,  H01L21/76283 ,  H01L21/76286 ,  H01L21/76837 ,  H01L23/3178 ,  H01L29/0649

Abstract: Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).

公开(公告)号：US20170271196A1

公开(公告)日：2017-09-21

申请号：US15461847

申请日：2017-03-17

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Ludovic Godet ,  Rui Cheng ,  Erica Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/762 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76224 ,  H01L21/02123 ,  H01L21/76283 ,  H01L21/76286 ,  H01L21/76837 ,  H01L23/3178 ,  H01L29/0649

Abstract: Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).

公开(公告)号：US12111572B2

公开(公告)日：2024-10-08

申请号：US18333290

申请日：2023-06-12

Applicant: Applied Materials, Inc.

Inventor： Hao Tang ,  Kang Luo ,  Erica Chen ,  Yongan Xu

IPC: G03F7/00 ,  G02B5/18

CPC classification number: G03F7/0005 ,  G02B5/1857 ,  G03F7/0002

Abstract: A method of imprinting a pattern on a substrate is provided. The method includes forming a first pattern on a plurality of masters using a method other than imprinting, the first pattern including a plurality of patterned features of varying sizes; measuring the patterned features at a plurality of locations on each of the masters; selecting a first master of the plurality of masters based on the measurements of the patterned features on each of the masters; using the first master to form a second pattern on an imprint template; and imprinting the first pattern on a first device with the imprint template.

公开(公告)号：US11682556B2

公开(公告)日：2023-06-20

申请号：US17672305

申请日：2022-02-15

Applicant: Applied Materials, Inc.

Inventor： Jie Zhou ,  Erica Chen ,  Qiwei Liang ,  Chentsau Chris Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/26

CPC classification number: H01L21/02527 ,  C23C16/02 ,  C23C16/26 ,  H01L21/0262 ,  H01L21/02425 ,  H01L21/02488

Abstract: A method of forming graphene layers is disclosed. A method of improving graphene deposition is also disclosed. Some methods are advantageously performed at lower temperatures. Some methods advantageously provide graphene layers with lower resistance. Some methods advantageously provide graphene layers in a relatively short period of time.

公开(公告)号：US10892161B2

公开(公告)日：2021-01-12

申请号：US16169610

申请日：2018-10-24

Applicant: Applied Materials, Inc.

Inventor： Biao Liu ,  Cheng Pan ,  Erica Chen ,  Srinivas D. Nemani ,  Chang Ke ,  Lei Zhou

IPC: H01L21/02 ,  H01L23/31 ,  H01L21/768 ,  H01L23/29 ,  H01L21/3105 ,  H01L21/321 ,  C23C16/00 ,  B05D1/18 ,  H01L21/32

Abstract: Methods for depositing desired materials formed on certain locations of a substrate with desired materials using a selective deposition process for semiconductor applications are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes supplying a first gas comprising a hydroxy terminated hydrocarbon containing material to a surface of a substrate, selectively forming a passivation layer on a first material of the substrate, selectively forming self assembled monolayers on a second material of the substrate, and selectively forming a material layer on the passivation layer.

公开(公告)号：US09773675B2

公开(公告)日：2017-09-26

申请号：US15432368

申请日：2017-02-14

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Srinivas D. Nemani ,  Erica Chen ,  Jun Xue ,  Ellie Y. Yieh ,  Gary E. Dickerson

IPC: H01L21/033 ,  H01L27/088 ,  H01L27/092 ,  H01L29/78 ,  H01L21/3105 ,  H01L27/108 ,  H01L27/12

CPC classification number: H01L21/0337 ,  H01J2237/24528 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31155 ,  H01L21/32 ,  H01L21/76205 ,  H01L21/7624 ,  H01L21/823431 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/10879 ,  H01L27/1211 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/7831

Abstract: Embodiments of the present disclosure relate to precision material modification of three dimensional (3D) features or advanced processing techniques. Directional ion implantation methods are utilized to selectively modify desired regions of a material layer to improve etch characteristics of the modified material. For example, a modified region of a material layer may exhibit improved etch selectivity relative to an unmodified region of the material layer. Methods described herein are useful for manufacturing 3D hardmasks which may be advantageously utilized in various integration schemes, such as fin isolation and gate-all-around, among others. Multiple directional ion implantation processes may also be utilized to form dopant gradient profiles within a modified layer to further influence etching processes.

公开(公告)号：US09620407B2

公开(公告)日：2017-04-11

申请号：US14613545

申请日：2015-02-04

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Srinivas D. Nemani ,  Erica Chen ,  Jun Xue ,  Ellie Y. Yieh ,  Gary E. Dickerson

IPC: H01L21/762 ,  H01L21/84 ,  H01L21/82 ,  H01L27/092 ,  H01L21/311 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/033 ,  H01L21/8238 ,  H01L21/3115 ,  H01L21/32

CPC classification number: H01L21/0337 ,  H01J2237/24528 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31155 ,  H01L21/32 ,  H01L21/76205 ,  H01L21/7624 ,  H01L21/823431 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/10879 ,  H01L27/1211 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/7831

Abstract: Embodiments of the present disclosure relate to precision material modification of three dimensional (3D) features or advanced processing techniques. Directional ion implantation methods are utilized to selectively modify desired regions of a material layer to improve etch characteristics of the modified material. For example, a modified region of a material layer may exhibit improved etch selectivity relative to an unmodified region of the material layer. Methods described herein are useful for manufacturing 3D hardmasks which may be advantageously utilized in various integration schemes, such as fin isolation and gate-all-around, among others. Multiple directional ion implantation processes may also be utilized to form dopant gradient profiles within a modified layer to further influence etching processes.

公开(公告)号：US11709423B2

公开(公告)日：2023-07-25

申请号：US17740116

申请日：2022-05-09

Applicant: Applied Materials, Inc.

Inventor： Hao Tang ,  Kang Luo ,  Erica Chen ,  Yongan Xu

IPC: G03F7/00 ,  G02B5/18

CPC classification number: G03F7/0005 ,  G02B5/1857 ,  G03F7/0002

Abstract: A method of imprinting a pattern on a substrate is provided. The method includes forming a first pattern on a plurality of masters using a method other than imprinting, the first pattern including a plurality of patterned features of varying sizes; measuring the patterned features at a plurality of locations on each of the masters; selecting a first master of the plurality of masters based on the measurements of the patterned features on each of the masters; using the first master to form a second pattern on an imprint template; and imprinting the first pattern on a first device with the imprint template.

公开(公告)号：US11488856B2

公开(公告)日：2022-11-01

申请号：US17069195

申请日：2020-10-13

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Ludovic Godet ,  Rui Cheng ,  Erica Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/762 ,  H01L21/768 ,  H01L21/02 ,  H01L23/31 ,  H01L29/06

Abstract: Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).