Abstract:
A display panel has an active area, and the active area has a camera region. The display panel includes a base, an insulating layer, and a plurality of transparent wirings. The insulating layer is disposed on the base. The insulating layer is provided with a plurality of first grooves located in the camera region. An included angle between a groove wall of a first groove and a surface on which an opening of the first groove is located is less than 90 degrees. The plurality of transparent wirings are disposed on groove walls of the plurality of first grooves.
Abstract:
A display panel includes an under screen camera display area and a normal display area surrounding the under screen camera display area, a plurality of switch assemblies are positioned at the normal display area, and a plurality of sub-pixels are positioned at the under screen camera display area. The display panel includes an insulating layer group and a plurality of connection lines; a plurality of trenches are positioned on the insulating layer group and extend from the sub-pixels to the switch assemblies; and at least part of the connection lines is positioned in the trench to reduce spacing distance between two adjacent connection lines, where the connection lines are connected between the switch assemblies and the sub-pixels.
Abstract:
Disclosed in embodiments of the present disclosure are a display substrate, a display panel, and a method for preparing the display substrate. The display substrate includes: a base substrate; a first source-drain layer, including first source-drain electrodes in the first area, and a first gate located in the second area; a first active layer, including a poly-silicon active layer located in the first area; a first gate layer, including a second gate and a connecting electrode located in the first area; a second active layer, including an oxide active layer located in the second area; a second gate layer, including a third gate located in the second area; and a second source-drain layer, including a second source-drain electrodes in the second area, and a lapping electrode located in the first area.
Abstract:
Embodiments of the present disclosure provide a flexible array substrate, a manufacturing method thereof, and a flexible display device, which relate to the field of display technology, and can reduce the difficulty of wiring, decrease the IR drop, and improve the problem that the wiring is prone to breakage when bent. The flexible array substrate includes a substrate, the substrate including a first sub-substrate and a second sub-substrate which are stacked, the second sub-substrate including at least one via hole; a wiring layer disposed between the first sub-substrate and the second sub-substrate; and a pixel array layer disposed on a side of the second sub-substrate facing away from the first sub-substrate; the wiring layer including a wiring, wherein the pixel array layer is electrically connected to the wiring through the at least one via hole.
Abstract:
A display substrate, a display panel, and a display device are provided. The display substrate includes: a base substrate; a first semiconductor layer on the base substrate; and a second semiconductor layer on a side of the first semiconductor layer away from the base substrate. The display substrate further includes a plurality of thin film transistors on the base substrate, which at least include a first transistor, a second transistor and a third transistor. Each of the plurality of thin film transistors includes an active layer. The active layer of at least one of the first transistor and the second transistor is located in the second semiconductor layer and contains an oxide semiconductor material. The active layer of the third transistor is located in the first semiconductor layer and contains a polysilicon semiconductor material. At least one of the first transistor and the second transistor has a dual-gate structure.
Abstract:
A drive backplane and a display panel are provided, the drive backplane includes: a substrate; and an oxide thin film transistor arranged on the substrate, wherein the oxide thin film transistor includes: an oxide active layer; a first gate structure disposed on a side of the oxide active layer away from the substrate; and a second gate structure disposed between the oxide active layer and the substrate; wherein at least one of the first gate structure and the second gate structure comprises a plurality of gate electrodes spaced apart along a direction in which the oxide active layer extends.
Abstract:
A method for preparing an array substrate includes: forming first and second active layers, and first and second gate layers above a base substrate; forming first and second via holes for exposing the first active layer and etching the first active layer; forming a first source-drain electrode layer including a first source electrode layer contacting the first active layer through the first via hole and a first drain electrode layer contacting the first active layer through the second via hole; forming third and fourth via holes for exposing the second active layer; forming a second source-drain electrode layer including a second source electrode layer contacting the second active layer through the third via hole and a second drain electrode layer contacting the second active layer through the fourth via hole. The second source/drain electrode layer is electrically connected with the first source-drain electrode layer.
Abstract:
Embodiments of the present invention provide a flexible base substrate and a fabrication method thereof. The flexible base substrate comprises: a first flexible film layer, having an upper surface and a lower surface opposite to each other, wherein a plurality of concave parts are arranged on the lower surface of the first flexible film layer.
Abstract:
The present disclosure relates to the technical field of flexible substrate processing, and discloses a flexible substrate attaching method. The flexible substrate attaching method comprises the steps of: pre-fixing a flexible substrate on a carrier substrate with a first fixation structure; forming a thin film on the flexible substrate, and forming a pattern of the thin film via a patterning process; the pattern of the thin film contacting at least a part of the flexible substrate and at least a part of the carrier substrate simultaneously to play the function of consolidating the flexible substrate onto the carrier substrate. In this flexible substrate attaching method, a flexible substrate can be fixed on a carrier substrate in good effect and the flexible panel can be easily detached after the manufacture is completed. The present disclosure further provides a flexible substrate attachment structure.
Abstract:
The present invention provides a polysilicon thin-film transistor array substrate and a method for preparing the same, and a display device, wherein the method comprises a step of forming a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode and a drain electrode of the polysilicon thin-film transistor, and a first electrode and a second electrode of a storage capacitor, and a gate line and a data line, wherein, the semiconductor layer and the first electrode of the storage capacitor are formed via a one-time patterning process, and the gate electrode, the gate line and the second electrode of the storage capacitor are formed via a one-time patterning process. By the solution of the invention, the number of mask plates used can be lowered, so that the process can be simplified, and the production cost can be lowered.