Abstract:
A semiconductor (10) has an active device, such as a transistor, with a directly underlying passive device, such as a capacitor (75, 77, 79), that are connected by a via or conductive region (52) and interconnect (68, 99). The via or conductive region (52) contacts a bottom surface of a diffusion or source region (22) of the transistor and contacts a first (75) of the capacitor electrodes. A laterally positioned vertical via (32, 54, 68) and interconnect (99) contacts a second (79) of the capacitor electrodes. A metal interconnect or conductive material (68) may be used as a power plane that saves circuit area by implementing the power plane underneath the transistor rather than adjacent the transistor.
Abstract:
The present invention relates to a plasma display panel, and more particularly, to a cell structure of a plasma display panel. In a plasma display panel in which square cells constitute a delta type barrier rib structure, a red cell and a green cell are alternately formed in a first horizontal cell line of the cells, a blue cell is located at the lower center between the red cell and the green cell in a second horizontal cell line of the cells, the blue cell is alternately formed together with a blank cell, and the first horizontal cell line and the second horizontal cell line are alternately formed in the vertical direction. Accordingly, brightness, efficiency and the contrast ratio are improved and high-speed driving is accomplished.
Abstract:
A process for forming an electronic device can include forming a semiconductor fin of a first height for a fin-type structure and removing a portion of the semiconductor fin such that the semiconductor fin is shortened to a second height. In accordance with specific embodiment a second semiconductor fin can be formed, each of the first and the second semiconductor fins having a different height representing a channel width. In accordance with another specific embodiment a second and a third semiconductor fin can be formed, each of the first, the second and the third semiconductor fins having a different height representing a channel width.
Abstract:
Disclosed herein is a method for manufacturing a component-embedded printed circuit board that is economically advantageous and simple. The method is characterized by stacking boards in which a high density of electronic components are mounted to form a core layer in which the electronic components are embedded, and by subsequently building up additional circuit layers.
Abstract:
A printed circuit board (PCB) having a three-dimensional spiral inductor, which includes a plurality of insulating layers and conductor layers. The PCB comprises a plurality of coil conductor patterns made of conductive material and shaped into strips, which is provided on the plurality of conductor layers, respectively, such that the plurality of coil conductor patterns are parallel to each other and positioned on the same plane perpendicular to the conductor layers, and in which each of the plurality of coil conductor patterns is longer than an adjacent inner coil conductor pattern.
Abstract:
Disclosed herein is a piezoelectric actuator drive system for forward or backward driving a piezoelectric actuator for zooming and/or focusing in a camera module. The piezoelectric actuator drive system comprises a power supply for supplying an operating voltage, a drive controller for controlling generation of a forward/backward drive signal for a piezoelectric actuator in response to an operation ON select signal and a forward/backward driving select signal, a clock generator for generating a first clock signal in response to the operating voltage from the power supply, and a drive signal generator for generating and supplying the forward or backward drive signal to the piezoelectric actuator in response to the first clock signal from the clock generator and the operating voltage from the power supply under the forward/backward drive signal generation control of the drive controller.
Abstract:
An outer-rotor variable-speed motor, to which single-phase AC power is applied and on which a rotor is provided outside a stator, comprises first and second main windings provided on a stator of the motor to form a plurality of poles, a frequency detector for detecting the frequency of AC power applied to the motor, and a relay for connecting the first and second main windings in series if the detected frequency is 60 Hz and connecting the first and second main windings in parallel if the detected frequency is 50 Hz. The speed of the motor is kept constant even when power at different frequencies is applied, so that it is possible to reduce the manufacturing cost of the motor and reduce the power consumption, and also to reduce electromagnetic noise from the motor.
Abstract:
A variable square-wave drive device for controlling square waves using feedback- and bias-control methods. The variable square-wave drive device includes an oscillator for generating a clock pulse; a frequency-divider/duty controller for frequency-dividing the clock pulse received from the oscillator to generate a clock signal and a square-wave signal; a drive for amplifying the square-wave signal received from the frequency-divider/duty controller according to a bias voltage, generating first and second square-wave signals having opposite phases, and outputting the first and second square-wave signals as a square-wave drive signal; a feedback controller for comparing a predetermined voltage variable determined by a user with the bias voltage of the drive to generate a comparison result signal; a switching controller for generating a switching signal upon receiving the comparison result signal from the feedback controller; and a bias voltage regulator for charging/discharging the input voltage according to the switching signal received from the switching controller so that it can adjust the bias voltage of the drive.
Abstract:
A semiconductor (10) has an active device, such as a transistor, with a directly underlying passive device, such as a capacitor (75, 77, 79), that are connected by a via or conductive region (52) and interconnect (68, 99). The via or conductive region (52) contacts a bottom surface of a diffusion or source region (22) of the transistor and contacts a first (75) of the capacitor electrodes. A laterally positioned vertical via (32, 54, 68) and interconnect (99) contacts a second (79) of the capacitor electrodes. A metal interconnect or conductive material (68) may be used as a power plane that saves circuit area by implementing the power plane underneath the transistor rather than adjacent the transistor.
Abstract:
A method for creating a vertical double-gate transistor design includes providing a planar transistor layout (10) having a gate layer (12) overlying an active layer (14). In one embodiment, a first intermediate layer (18) is defined based on an overlapping region of the gate and active layers, and, using the first intermediate layer, a second intermediate layer (22) is defined which defines a spacing between at least two fins of the vertical double-gate transistor design. The second intermediate layer may also define a length and a width of the at least two fins. One embodiment modifies a dimension of the first intermediate layer prior to defining the second intermediate layer. The method further includes defining a resulting layer (24) based on a non-overlapping region of the second intermediate layer and the active layer. The resulting layer may then be used to create a mask and a semiconductor device (30) corresponding to the vertical double-gate transistor design.