公开(公告)号：US20150376461A1

公开(公告)日：2015-12-31

申请号：US14750107

申请日：2015-06-25

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Jeffrey Dysard ,  Ernest Shen ,  Mary Cavanaugh

IPC: C09G1/02

CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1436 ,  C09K3/1454 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: A chemical-mechanical polishing concentrate includes at least 10 weight percent of a colloidal silica abrasive particle dispersed in a liquid carrier having a pH in a range from about 1.5 to about 7. The colloidal silica abrasive includes an aminosilane compound or a phosphonium silane compound incorporated therein. The concentrate may be diluted with at least 3 parts water per one part concentrate prior to use.

Abstract translation: 化学机械抛光浓缩物包含至少10重量％的分散在pH在约1.5至约7范围内的液体载体中的胶态二氧化硅磨料颗粒。胶体二氧化硅磨料包括氨基硅烷化合物或掺入鏻硅烷化合物 其中。 在使用之前，浓缩物可以用至少3份水/份浓缩物稀释。

公开(公告)号：US09127187B1

公开(公告)日：2015-09-08

申请号：US14222716

申请日：2014-03-24

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Jeffrey Dysard

IPC: C09K13/00 ,  C09G1/02 ,  H01L21/321 ,  H01L21/306

CPC classification number: C09G1/02 ,  H01L21/30625 ,  H01L21/3212

Abstract: A chemical mechanical polishing composition includes a water based liquid carrier and first and second silica abrasives dispersed in the liquid carrier. The first silica abrasive is a colloidal silica abrasive having a permanent positive charge of at least 10 mV. The second silica abrasive has a neutral charge or a non-permanent positive charge. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

Abstract translation: 化学机械抛光组合物包括水基液体载体和分散在液体载体中的第一和第二二氧化硅研磨剂。 第一种二氧化硅研磨剂是具有至少10mV的永久正电荷的胶体二氧化硅研磨剂。 第二硅石磨料具有中性电荷或非永久正电荷。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。

公开(公告)号：US08961807B2

公开(公告)日：2015-02-24

申请号：US13841344

申请日：2013-03-15

Applicant: Cabot Microelectronics Corporation

Inventor： Lin Fu ,  Steven Grumbine

IPC: C03C15/00 ,  C09G1/02 ,  B44C1/22

CPC classification number: C09G1/02 ,  C08L33/26

Abstract: Disclosed are a polishing composition and method of polishing a substrate. The composition has low-load (e.g., up to about 0.1 wt. %) of abrasive particles. The polishing composition also contains water and at least one anionic surfactant. In some embodiments, the abrasive particles are alpha alumina particles (e.g., coated with organic polymer). The polishing composition can be used, e.g., to polish a substrate of weak strength such as an organic polymer. An agent for oxidizing at least one of silicon and organic polymer is included in the composition in some embodiments.

Abstract translation: 公开了抛光组合物和抛光基材的方法。 组合物具有低负荷（例如，高达约0.1重量％）的磨料颗粒。 抛光组合物还含有水和至少一种阴离子表面活性剂。 在一些实施方案中，磨料颗粒是α氧化铝颗粒（例如，涂覆有机聚合物）。 抛光组合物可以用于例如抛光弱强度的基材如有机聚合物。 在一些实施方案中，在组合物中包含氧化至少一种硅和有机聚合物的试剂。

公开(公告)号：US20140263184A1

公开(公告)日：2014-09-18

申请号：US13841344

申请日：2013-03-15

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： Lin Fu ,  Steven Grumbine

IPC: C09G1/02 ,  B44C1/22

CPC classification number: C09G1/02 ,  C08L33/26

Abstract: Disclosed are a polishing composition and method of polishing a substrate. The composition has low-load (e.g., up to about 0.1 wt. %) of abrasive particles. The polishing composition also contains water and at least one anionic surfactant. In some embodiments, the abrasive particles are alpha alumina particles (e.g., coated with organic polymer). The polishing composition can be used, e.g., to polish a substrate of weak strength such as an organic polymer. An agent for oxidizing at least one of silicon and organic polymer is included in the composition in some embodiments.

Abstract translation: 公开了抛光组合物和抛光基材的方法。 组合物具有低负荷（例如，高达约0.1重量％）的磨料颗粒。 抛光组合物还含有水和至少一种阴离子表面活性剂。 在一些实施方案中，磨料颗粒是α氧化铝颗粒（例如，涂覆有机聚合物）。 抛光组合物可以用于例如抛光弱强度的基材如有机聚合物。 在一些实施方案中，在组合物中包含氧化至少一种硅和有机聚合物的试剂。

公开(公告)号：US20140209566A1

公开(公告)日：2014-07-31

申请号：US13754413

申请日：2013-01-30

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： Lin Fu ,  Steven Grumbine ,  Matthias Stender

IPC: C09G1/02

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/31058

Abstract: The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate with the chemical-mechanical polishing composition. The polishing composition comprises (a) abrasive particles, wherein the abrasive particles comprise zirconia, (b) at least one metal ion oxidizer, wherein the at least one metal ion oxidizer comprises metal ions of Co3+, Au+, Ag+, Pt2+, Hg2+, Cr3+, Fe3+, Ce4+, or Cu2+, and (c) an aqueous carrier, wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 7, and wherein the chemical-mechanical polishing composition does not contain a peroxy-type oxidizer.

Abstract translation: 本发明提供化学机械抛光组合物和用化学机械抛光组合物对基材进行化学机械研磨的方法。 抛光组合物包含（a）研磨颗粒，其中磨料颗粒包括氧化锆，（b）至少一种金属离子氧化剂，其中至少一种金属离子氧化剂包括Co3 +，Au +，Ag +，Pt2 +，Hg2 +，Cr3 + ，Fe3 +，Ce4 +或Cu2 +，和（c）水性载体，其中化学机械抛光组合物的pH在约1至约7的范围内，并且其中化学机械抛光组合物不含有过氧化物 型氧化器。

公开(公告)号：US10988635B2

公开(公告)日：2021-04-27

申请号：US16208797

申请日：2018-12-04

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Kraft ,  Fernando Hung Low ,  Roman A. Ivanov ,  Steven Grumbine

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/3215

Abstract: A chemical mechanical polishing composition for polishing a substrate having copper, barrier, and dielectric layers includes a water based liquid carrier, cationic silica abrasive particles dispersed in the liquid carrier, and a triazole compound, wherein the polishing composition has a pH of greater than about 6 and the cationic silica abrasive particles have a zeta potential of at least 10 mV. The triazole compound is not benzotriazole or a benzotriazole compound. A method for chemical mechanical polishing a substrate including copper, barrier, and dielectric layers includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the copper, barrier, and dielectric layers from the substrate and thereby polish the substrate.

公开(公告)号：US20200172759A1

公开(公告)日：2020-06-04

申请号：US16208703

申请日：2018-12-04

Applicant: Cabot Microelectronics Corporation

Inventor： Fernando HUNG LOW ,  Steven Kraft ,  Roman A. Inanov ,  Steven Grumbine ,  Andrew R. Wolff

IPC: C09G1/02 ,  H01L21/321

Abstract: A chemical mechanical polishing composition for polishing a substrate having a cobalt layer includes a water based liquid carrier, cationic silica abrasive particles dispersed in the liquid carrier, and a triazole compound, wherein the polishing composition has a pH of greater than about 6 and the cationic silica abrasive particles have a zeta potential of at least 10 mV. The triazole compound is not benzotriazole or a benzotriazole compound. A method for chemical mechanical polishing a substrate including a cobalt layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the cobalt layer from the substrate and thereby polish the substrate.

公开(公告)号：US10647887B2

公开(公告)日：2020-05-12

申请号：US15864720

申请日：2018-01-08

Applicant: Cabot Microelectronics Corporation

Inventor： Kevin P. Dockery ,  Pankaj K. Singh ,  Steven Grumbine ,  Kim Long

IPC: B24B37/04 ,  C09G1/02 ,  C09K3/14

Abstract: The invention provides a chemical-mechanical polishing composition comprising a) surface-modified colloidal silica particles, comprising a negatively-charged group on the surface of the particles, wherein the surface-modified colloidal silica particles have a negative charge, a particle size of about 90 nm to about 350 nm, and a zeta potential of about −5 mV to about −35 mV at a pH of about 3, b) an iron compound, c) a stabilizing agent, d) a corrosion inhibitor, and e) an aqueous carrier. The invention also provides a method suitable for polishing a substrate.

公开(公告)号：US09803106B2

公开(公告)日：2017-10-31

申请号：US14750050

申请日：2015-06-25

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Jeffrey Dysard ,  Ernest Shen ,  Mary Cavanaugh ,  Daniel Clingerman

IPC: C09G1/02 ,  C09G1/06 ,  B24B37/04 ,  B24B1/00 ,  C09G1/00 ,  C09G1/04 ,  C09K3/14 ,  H01L21/306 ,  H01L21/321 ,  H01L21/3105

CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1436 ,  C09K3/1454 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: Methods for fabricating a chemical-mechanical polishing composition include growing colloidal silica abrasive particles in a liquid including an aminosilane compound such that the aminosilane compound becomes incorporated in the abrasive particles. A dispersion including such colloidal silica abrasive particles may be further processed to obtain a chemical-mechanical polishing composition including colloidal silica particles having the aminosilane compound incorporated therein.

公开(公告)号：US09617450B2

公开(公告)日：2017-04-11

申请号：US14657594

申请日：2015-03-13

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Shoutian Li ,  William Ward ,  Pankaj Singh ,  Jeffrey Dysard

IPC: C09G1/02 ,  B24B37/04 ,  C09K3/14 ,  H01L21/3105

CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/31053

Abstract: The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.