公开(公告)号：US06511543B1

公开(公告)日：2003-01-28

申请号：US09581857

申请日：2000-08-24

申请人： Peter Stauss ,  Jörg Kerschbaumer

发明人： Peter Stauss ,  Jörg Kerschbaumer

IPC分类号： B05C1300

CPC分类号： H01L21/68721

摘要： A holding device for a vacuum unit has a lifting table transferable between a lower end position and an upper end position for moving a support plate toward the underside of a disc-shaped workpiece. The workpiece is supported by a support ring carrying centring pins spaced to form an equilateral triangle, in the center of which the axis of the support plate is located. A clamping ring clamps the workpiece with the support ring. The centring pins engage the clamping ring to center the support ring and clamping ring relative to the support plate axis so they are not affected by thermal expansion.

摘要翻译： 用于真空单元的保持装置具有可在下端位置和上端位置之间转移的升降台，用于将支撑板朝向盘形工件的下侧移动。 工件由支撑环支撑，该支撑环承载间隔开的中心销，以形成支撑板的轴线所在的中心的等边三角形。 夹紧环用支撑环夹紧工件。 定心销接合夹紧环，使支撑环和夹紧环相对于支撑板轴线居中，使其不受热膨胀的影响。

公开(公告)号：US08410507B2

公开(公告)日：2013-04-02

申请号：US13122779

申请日：2009-08-11

申请人： Peter Stauss ,  Reiner Windisch ,  Frank Baumann ,  Matthias Peter

发明人： Peter Stauss ,  Reiner Windisch ,  Frank Baumann ,  Matthias Peter

IPC分类号： H01L29/22 ,  H01L29/227 ,  H01L33/00

CPC分类号： H01L25/0753 ,  H01L33/08 ,  H01L33/50 ,  H01L2224/32225 ,  H01L2924/0002 ,  H01L2924/00

摘要： A luminous means (1) including at least one optoelectronic semiconductor device (2) which emits electromagnetic radiation during operation at at least one first wavelength (L1) and at at least one second wavelength (L2), wherein the first wavelength (L1) and the second wavelength (L2) differ from one another and are below 500 nm, in particular between 200 nm and 500 nm. Furthermore, the luminous means (1) includes at least one conversion means (3) which converts the first wavelength (L1) at least partly into radiation having a different frequency. The radiation spectrum emitted by the luminous means (1) during operation is metameric with respect to a black body spectrum. Such a luminous means makes it possible to choose the first wavelength and the second wavelength in such a way that a high color rendering quality and a high efficiency of the luminous means can be realized simultaneously.

摘要翻译： 一种发光装置（1），包括至少一个在至少一个第一波长（L1）和至少一个第二波长（L2）的操作期间发射电磁辐射的光电子半导体器件，其中第一波长（L1）和 第二波长（L2）彼此不同，低于500nm，特别是在200nm和500nm之间。 此外，发光装置（1）包括至少一个转换装置（3），其将第一波长（L1）至少部分地转换成具有不同频率的辐射。 在运行期间由发光装置（1）发射的辐射光谱相对于黑体光谱是相同的。 这样的发光装置使得可以选择第一波长和第二波长，使得可以同时实现发光装置的高显色质量和高效率。

公开(公告)号：US20070241260A1

公开(公告)日：2007-10-18

申请号：US11240987

申请日：2005-09-29

申请人： Arndt Jaeger ,  Peter Stauss

发明人： Arndt Jaeger ,  Peter Stauss

IPC分类号： H01L31/00

CPC分类号： H01L31/1013 ,  G01J3/513 ,  G01J2003/516 ,  H01L31/02162 ,  H01L31/03046 ,  Y02E10/544

摘要： A radiation detector comprising a plurality of detector elements (1, 2, 3) each having an active region (14, 24, 34) provided for radiation reception and for signal generation, the detector elements being monolithically integrated into a semiconductor body (5) of the radiation detector, a signal that is to be generated in a first detector element being able to be tapped off separately from a signal that is to be generated in a second detector element, and at least one of the active regions being designed for radiation reception in the visible spectral range.

摘要翻译： 一种辐射检测器，包括多个检测器元件（1,2,3），每个检测器元件具有用于辐射接收和信号产生的有源区域（14,24,34），所述检测器元件整体地集成到半导体本体（5）中， 在第一检测器元件中产生的能够与要在第二检测器元件中产生的信号分开地分接的信号，并且至少一个有源区域被设计用于辐射 接收在可见光谱范围。

公开(公告)号：US20060180804A1

公开(公告)日：2006-08-17

申请号：US10544159

申请日：2004-01-27

申请人： Peter Stauss ,  Andreas Ploessl

发明人： Peter Stauss ,  Andreas Ploessl

IPC分类号： H01L29/06

CPC分类号： H01L33/02 ,  H01L21/187 ,  H01L21/6835 ,  H01L24/29 ,  H01L24/83 ,  H01L33/0079 ,  H01L33/30 ,  H01L2221/68354 ,  H01L2224/29 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/29144 ,  H01L2224/29298 ,  H01L2224/83001 ,  H01L2224/8319 ,  H01L2224/83224 ,  H01L2224/83801 ,  H01L2224/83805 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/0106 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/157 ,  H01L2924/00 ,  H01L2924/01031 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： A semiconductor component having a thin-film semiconductor body (2) arranged on a germanium-containing carrier (4). A method for producing such a semiconductor component includes producing a semiconductor component having a thin-film conductor body arranged on a carrier, having the steps of growing the thin-film semiconductor body on a substrate, applying the carrier to a side of the thin-film semiconductor body that is remote from the substrate, and stripping the thin-film semiconductor body from the substrate, wherein the carrier contains germanium.

摘要翻译： 一种具有布置在含锗载体（4）上的薄膜半导体本体（2）的半导体部件。 制造这种半导体部件的方法包括制造具有布置在载体上的薄膜导体体的半导体部件，具有将薄膜半导体体在基板上生长的步骤，将载体施加到薄膜导体本体的一侧， 膜半导体本体，其远离衬底，并从衬底剥离薄膜半导体本体，其中载体包含锗。

公开(公告)号：US20120132687A1

公开(公告)日：2012-05-31

申请号：US13302107

申请日：2011-11-22

申请人： Tilo Dittrich ,  Heeb Norbert ,  Peter Stauss ,  Simon Beauvais

发明人： Tilo Dittrich ,  Heeb Norbert ,  Peter Stauss ,  Simon Beauvais

IPC分类号： B25C1/14

CPC分类号： B25C1/08

摘要： The invention relates to a fastener driving tool comprising a tank (5) for storing a fuel, in particular liquefied petroleum gas, a combustion chamber (2) connected to the tank, wherein the combustion chamber (2) has a movable piston for powering a driving plunger, and a metering device (4) arranged between the tank (5) and the combustion chamber (2), wherein a defined quantity of fuel can be transported by means of the metering device (4) from a metering space (12) into the combustion chamber, wherein the metering device (4) comprises an electric stepper motor (15) by means of which the defined amount can be varied as a function of a temperature.

摘要翻译： 本发明涉及一种紧固件驱动工具，其包括用于储存燃料（特别是液化石油气）的罐（5），连接到罐的燃烧室（2），其中燃烧室（2）具有可动活塞，用于为 驱动柱塞和设置在燃料箱（5）和燃烧室（2）之间的计量装置（4），其中定量的燃料可以通过计量装置（4）从计量空间（12）输送， 进入燃烧室，其中计量装置（4）包括电步进电动机（15），通过该电动步进电动机可以根据温度变化限定的量。

公开(公告)号：US20110248295A1

公开(公告)日：2011-10-13

申请号：US13122779

申请日：2009-08-11

申请人： Peter Stauss ,  Reiner Windisch ,  Frank Baumann ,  Matthias Peter

发明人： Peter Stauss ,  Reiner Windisch ,  Frank Baumann ,  Matthias Peter

IPC分类号： H01L33/50

CPC分类号： H01L25/0753 ,  H01L33/08 ,  H01L33/50 ,  H01L2224/32225 ,  H01L2924/0002 ,  H01L2924/00

摘要： In at least one embodiment of the luminous means (1), the latter comprises at least one optoelectronic semiconductor device (2) which emits electromagnetic radiation during operation at at least one first wavelength (L1) and at least one second wavelength (L2), wherein the first wavelength (L1) and the second wavelength (L2) differ from one another and are below 500 nm, in particular between 200 nm and 500 nm. Furthermore, the luminous means (1) comprises at least one conversion means (3) which converts the first wavelength (L1) at least partly into radiation having a different frequency. The radiation spectrum emitted by the luminous means (1) during operation is metameric with respect to a black body spectrum. Such a luminous means makes it possible to choose the first wavelength and the second wavelength in such a way that a high color rendering quality and a high efficiency of the luminous means can be realized simultaneously.

摘要翻译： 在发光装置（1）的至少一个实施例中，后者包括在至少一个第一波长（L1）和至少一个第二波长（L2）的操作期间发射电磁辐射的至少一个光电半导体器件（2） 其中第一波长（L1）和第二波长（L2）彼此不同，并且低于500nm，特别是在200nm和500nm之间。 此外，发光装置（1）包括至少一个转换装置（3），其将第一波长（L1）至少部分转换成具有不同频率的辐射。 在运行期间由发光装置（1）发射的辐射光谱相对于黑体光谱是相同的。 这样的发光装置使得可以选择第一波长和第二波长，使得可以同时实现发光装置的高显色质量和高效率。

公开(公告)号：US20110042643A1

公开(公告)日：2011-02-24

申请号：US12680463

申请日：2008-09-12

申请人： Peter Stauss ,  Matthias Peter ,  Alexander Walter

发明人： Peter Stauss ,  Matthias Peter ,  Alexander Walter

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/3086 ,  H01S5/34 ,  H01L2924/00

摘要： An optoelectronic semiconductor chip is specified, which has an active zone (20) containing a multi quantum well structure provided for generating electromagnetic radiation, which comprises a plurality of successive quantum well layers (210, 220, 230). The multi quantum well structure comprises at least one first quantum well layer (210), which is n-conductively doped and which is arranged between two n-conductively doped barrier layers (250) adjoining the first quantum well layer. It comprises a second quantum well layer (220), which is undoped and is arranged between two barrier layers (250, 260) adjoining the second quantum well layer, of which one is n-conductively doped and the other is undoped. In addition, the multi quantum well structure comprises at least one third quantum well layer (230), which is undoped and which is arranged between two undoped barrier layers (260) adjoining the third quantum well layer.

摘要翻译： 规定了一种光电子半导体芯片，其具有包含多个量子阱结构的活动区域（20），所述有源区域包括多个连续量子阱层（210,220,230），所述有源区域包括用于产生电磁辐射的多量子阱结构。 多量子阱结构包括至少一个第一量子阱层（210），其被n导电掺杂并且布置在邻接第一量子阱层的两个n导电掺杂阻挡层（250）之间。 它包括未掺杂的第二量子阱层（220），并且被布置在邻接第二量子阱层的两个势垒层（250,260）之间，其中一个是n导电掺杂的，另一个是未掺杂的。 另外，多量子阱结构包括至少一个未掺杂的第三量子阱层（230），其布置在与第三量子阱层相邻的两个未掺杂的势垒层（260）之间。

公开(公告)号：US07459727B2

公开(公告)日：2008-12-02

申请号：US11137680

申请日：2005-05-25

申请人： Peter Stauss

发明人： Peter Stauss

IPC分类号： H01L33/00

CPC分类号： H01L33/08 ,  H01L33/0079 ,  H01L33/46 ,  H01L2924/0002 ,  Y10S438/93 ,  H01L2924/00

摘要： The invention concerns an optoelectronic component comprising a layer stack that includes at least two active zones and a carrier that is applied to the layer stack. The invention further concerns a method of fabricating such an optoelectronic component.

摘要翻译： 本发明涉及一种光电子部件，其包括层堆叠，其包括至少两个活动区域和施加到层叠层的载体。 本发明还涉及制造这种光电子部件的方法。

公开(公告)号：US07435605B2

公开(公告)日：2008-10-14

申请号：US11825895

申请日：2007-07-09

申请人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

发明人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

IPC分类号： H01L21/00

CPC分类号： H01L33/40 ,  H01L33/0079 ,  H01L33/30 ,  Y10S438/933

摘要： A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.

摘要翻译： 一种制造在外延生长的半导体层序列的基于n导电AlGaInP基或AlGaInP的外层上具有电接触区域的部件的方法，其中应用包括Au和至少一种掺杂剂的电接触材料 然后将外层退火。 掺杂剂含有选自Ge，Si，Sn和Te中的至少一种元素。 此外，公开了一种组件，其包括具有发射电磁辐射的有源区的外延生长的半导体层序列，所述半导体层序列具有基于导电AlGaInP或AlGaInAs的外层，施加电接触区域 使用所述方法。

公开(公告)号：US20070264740A1

公开(公告)日：2007-11-15

申请号：US11825895

申请日：2007-07-09

申请人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

发明人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/0079 ,  H01L33/30 ,  Y10S438/933

摘要： A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.

摘要翻译： 一种制造在外延生长的半导体层序列的基于n导电AlGaInP基或AlGaInP的外层上具有电接触区域的部件的方法，其中应用包括Au和至少一种掺杂剂的电接触材料 然后将外层退火。 掺杂剂含有选自Ge，Si，Sn和Te中的至少一种元素。 此外，公开了一种组件，其包括具有发射电磁辐射的有源区的外延生长的半导体层序列，该半导体层序列具有基于n导电AlGaInP或AlGaInAs的外层，施加电接触区域 使用所述方法。